isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP352(R) FEATURES ·Drain Current –ID= 13A@ TC=25℃ ·Drain Source Voltage: VDSS= 400V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) ·Fast Switching DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 400 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 13 A IDM Drain Current-Single Pluse 52 A PD Total Dissipation @TC=25℃ 150 W TJ Max. Operating Junction Temperature -55~150 ℃ Storage Temperature -55~150 ℃ MAX UNIT 0.83 ℃/W 80 ℃/W Tstg THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Product Specification INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP352(R) ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)DSS PARAMETER CONDITIONS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 8A IGSS Gate-Body Leakage Current IDSS VSD MIN MAX 400 2 UNIT V 4 V 0.4 Ω VGS= ±20V;VDS= 0 ±100 nA Zero Gate Voltage Drain Current VDS= 400V; VGS= 0 VDS= 320V; VGS= 0; Tj= 150℃ 250 1000 μA Forward On-Voltage IS= 13A; VGS= 0 1.5 V · isc website：www.iscsemi.com 2 isc & iscsemi is registered trademark