PD - 96344
AUTOMOTIVE GRADE
AUIRFR5410
Features
●
●
●
●
●
●
●
●
●
●
HEXFET® Power MOSFET
Advanced Planar Technology
P-Channel MOSFET
Low On-Resistance
Dynamic dV/dT Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Repetitive Avalanche Allowed up to
Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
G
S
V(BR)DSS
-100V
RDS(on) max.
0.205
ID
-13A
Description
Specifically designed for Automotive applications,
this Cellular Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for
use in Automotive and a wide variety of other
applications.
D
S
G
D-Pak
AUIRFR5410
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T A) is 25°C, unless otherwise specified.
Max.
Parameter
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V
-13
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
-8.2
Pulsed Drain Current
-52
IDM
c
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
VGS
EAS
IAR
EAR
d
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current c
c
e
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
Units
A
66
0.53
± 20
W
W/°C
V
194
mJ
-8.4
A
6.3
-5.0
-55 to + 150
mJ
V/ns
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
gj
Parameter
RJC
Junction-to-Case
RJA
Junction-to-Ambient (PCB mount)
RJA
Junction-to-Ambient
www.kersemi.com
i
Typ.
Max.
–––
1.9
–––
50
–––
110
Units
°C/W
1
12/06/10
AUIRFR5410
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Min. Typ. Max. Units
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
-100
–––
–––
-2.0
3.2
–––
–––
–––
–––
–––
–––
-0.12 –––
––– 0.205
–––
-4.0
–––
–––
–––
-25
––– -250
–––
100
––– -100
V
V/°C
V
S
μA
nA
Conditions
VGS = 0V, ID = -250μA
Reference to 25°C, ID = -1mA
VGS = -10V, ID = -7.8A
VDS = VGS, ID = -250μA
VDS = -25V, ID = -7.8A
VDS = -100V, VGS = 0V
VDS = -80V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
f
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
58
45
46
4.5
58
8.3
32
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
760
260
170
–––
–––
–––
and center of die contact
VGS = 0V
VDS = -25V
ƒ = 1.0MHz
nC
ns
nH
pF
Diode Characteristics
Parameter
Min. Typ. Max. Units
ID = -8.4A
VDS = -80V
VGS = -10V
VDD = =-50V
ID = -8.4A
RG = 9.1
RD = 6.2
Between lead,
fh
fh
D
G
h
Conditions
IS
Continuous Source Current
–––
–––
-13
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-52
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
-1.6
190
970
p-n junction diode.
TJ = 25°C, IS = -7.8A, VGS = 0V
TJ = 25°C, IF = -8.4A
di/dt = 100A/μs
c
MOSFET symbol
A
–––
–––
–––
–––
130
650
S
V
ns
nC
D
G
f
S
fh
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 6.4mH, RG = 25,
IAS = -7.8A. (See Figure 12)
ISD -7.8A, di/dt 200A/µs, VDD V(BR)DSS,
TJ 150°C.
Pulse width 300µs; duty cycle 2%.
2
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRF9530N data and test conditions.
When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to
application note #AN-994.
R is measured at Tj approximately 90°C.
www.kersemi.com
AUIRFR5410
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
D-PAK
MSL1
Class M2 (200V)
AEC-Q101-002
ESD
Human Body Model
Class H1B (1000V)
AEC-Q101-001
Charged Device
Model
RoHS Compliant
Class C5 (1125V)
AEC-Q101-005
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions to AEC-Q101 requirements are noted in the qualification report.
www.kersemi.com
3
AUIRFR5410
100
100
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
10
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-4.5V
0.1
20μs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
TJ = 150 ° C
1
V DS = 10V
20μs PULSE WIDTH
5
6
7
8
9
10
-VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
4
1
10
100
Fig 2. Typical Output Characteristics
100
10
20μs PULSE WIDTH
TJ = 150 °C
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4
-4.5V
1
0.1
0.1
100
-VDS , Drain-to-Source Voltage (V)
0.1
10
ID = -14A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.kersemi.com
AUIRFR5410
2000
1200
-VGS , Gate-to-Source Voltage (V)
1600
C, Capacitance (pF)
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
Ciss
800
Coss
Crss
400
0
1
10
100
A
ID = -8.4A
15
10
5
0
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
20
30
40
50
60
QG, Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS = -80V
VDS = -50V
VDS = -20V
10
TJ = 25 °C
1
0.1
0.2
100
10us
100us
10
V GS = 0 V
0.8
1.4
2.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.kersemi.com
2.6
1
1ms
TC = 25° C
TJ = 150° C
Single Pulse
1
10ms
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
AUIRFR5410
RD
VDS
15
VGS
12
-ID , Drain Current (A)
D.U.T.
RG
-
+
VDD
-10V
9
Pulse Width µs
Duty Factor
6
Fig 10a. Switching Time Test Circuit
3
td(on)
0
25
50
75
100
125
TC , Case Temperature ( °C)
150
tr
t d(off)
tf
VGS
10%
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.kersemi.com
AUIRFR5410
L
IAS
-20V
- V
DD
+VDD
D.U.T
RG
tp
A
DRIVER
0.01
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
500
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-3.5A
-4.9A
BOTTOM -7.8A
TOP
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50K
QG
-10V
QGS
.2F
.3F
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.kersemi.com
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
AUIRFR5410
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
-
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
+
-
-
+
+
RG
VGS
*
-
dv/dt controlled by RG
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
] ***
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[
Re-Applied
Voltage
Body Diode
VDD
]
Forward Drop
Inductor Curent
ISD
Ripple 5%
[
]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
8
www.kersemi.com
AUIRFR5410
D-Pak Part Marking Information
Part Number
AUFR5410
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive
XX
Lot Code
www.kersemi.com
9
AUIRFR5410
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
10
www.kersemi.com