Vishay IRFR9120PBF Power mosfet Datasheet

IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Dynamic dV/dt Rating
- 100
RDS(on) (Ω)
VGS = - 10 V
Qg (Max.) (nC)
18
Qgs (nC)
3.0
Qgd (nC)
9.0
Configuration
• Repetitive Avalanche Rated
0.60
RoHS*
• Surface Mount (IRFR9120/SiHFR9120)
COMPLIANT
• Straight Lead (IRFU9120/SiHFU9120)
• Available in Tape and Reel
• P-Channel
Single
• Fast Switching
S
DPAK
(TO-252)
Available
• Lead (Pb)-free Available
DESCRIPTION
IPAK
(TO-251)
G
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surcace mount applications.
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
DPAK (TO-252)
DPAK (TO-252)
DPAK (TO-252)
IRFR9120PbF
IRFR9120TRPbFa
IRFR9120TRLPbFa
SiHFR9120-E3
SiHFR9120T-E3a
SiHFR9120TL-E3a
IRFR9120
IRFR9120TRa
IRFR9120TRLa
SiHFU9120-E3
IRFU9120PbF
SiHFR9120
SiHFR9120Ta
SiHFR9120TLa
SiHFU9120
IPAK (TO-251)
IRFU9120PbF
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 100
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
Pulsed Drain
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Currenta
ID
IDM
Linear Derating Factor (PCB Mount)e
0.020
Repetitive Avalanche
Repetitive Avalanche
Energya
Maximum Power Dissipation
TC = 25 °C
Maximum Power Dissipation (PCB Mount)e
TA = 25 °C
Peak Diode Recovery dV/dtc
A
- 22
0.33
Currenta
V
- 5.6
- 3.6
Linear Derating Factor
Single Pulse Avalanche Energyb
UNIT
W/°C
EAS
210
mJ
IAR
- 5.6
A
EAR
4.2
mJ
PD
dV/dt
42
2.5
- 5.5
W
V/ns
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
WORK-IN-PROGRESS
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
SYMBOL
LIMIT
UNIT
TJ, Tstg
- 55 to + 150
°C
260d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 10 mH, RG = 25 Ω, IAS = - 5.6 A (see fig. 12).
c. ISD ≤ - 6.8 A, dI/dt ≤ 110 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
-
50
Maximum Junction-to-Case (Drain)
RthJC
-
-
3.0
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 µA
- 100
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.098
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
nA
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
IGSS
IDSS
RDS(on)
gfs
VGS = ± 20 V
-
-
± 100
VDS = - 100 V, VGS = 0 V
-
-
- 100
VDS = - 80 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
VGS = - 10 V
ID = - 3.4 Ab
VDS = - 50 V, ID = - 3.4 A
µA
-
-
0.60
Ω
1.5
-
-
S
-
390
-
-
170
-
-
45
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
VGS = - 10 V
ID = - 6.8 A, VDS = - 80 V,
see fig. 6 and 13b
-
-
18
-
-
3.0
Gate-Drain Charge
Qgd
-
-
9.0
Turn-On Delay Time
td(on)
-
9.6
-
-
29
-
-
21
-
-
25
-
-
4.5
-
-
7.5
-
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
tr
td(off)
VDD = - 50 V, ID = - 6.8 A,
RG = 18 Ω, RD = 7.1 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
D
pF
nC
ns
nH
G
S
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Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
-
-
- 5.6
-
-
- 22
-
-
- 6.3
UNIT
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 5.6 A, VGS = 0 Vb
TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/µsb
V
-
100
200
ns
-
0.33
0.66
µC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 °C
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
+VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on)
tr
td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
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IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
L
Vary tp to obtain
required IAS
IAS
VDS
VDS
D.U.T
RG
+ V DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
IRFR9120, IRFU9120, SiHFR9120, SiHFU9120
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91280.
Document Number: 91280
S-Pending-Rev. A, 17-Jun-08
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
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Document Number: 91000
Revision: 18-Jul-08
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