Vishay IRFR9214PBF Power mosfet Datasheet

IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
•
•
•
•
•
•
•
- 250
RDS(on) (Ω)
VGS = - 10 V
3.0
Qg (Max.) (nC)
14
Qgs (nC)
3.1
Qgd (nC)
6.8
Configuration
Single
P-Channel
Surface Mount (IRFR9214/SiHFR9214)
Straight Lead (IRFU9214/SiHFU9214)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
S
DESCRIPTION
DPAK
(TO-252)
IPAK
(TO-251)
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU/SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
D
P-Channel MOSFET
ORDERING INFORMATION
Package
DPAK (TO-252)
IRFR9214PbF
SiHFR9214-E3
IRFR9214
SiHFR9214
Lead (Pb)-free
SnPb
DPAK (TO-252)
IRFR9214TRLPbFa
SiHFR9214TL-E3a
IRFR9214TRLa
SiHFR9214TLa
DPAK (TO-252)
IRFR9214TRPbFa
SiHFR9214T-E3a
IRFR9214TRa
SiHFR9214Ta
IPAK (TO-251)
IRFU9214PbF
SiHFU9214-E3
IRFU9214
SiHFU9214
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
- 250
Gate-Source Voltage
VGS
± 20
Continuous Drain Current
VGS at - 10 V
TC = 25 °C
TC = 100 °C
Pulsed Drain Currenta
ID
IDM
Linear Derating Factor
UNIT
V
- 2.7
- 1.7
A
- 11
0.40
W/°C
EAS
100
mJ
Currenta
IAR
- 2.7
A
Repetitive Avalanche Energya
EAR
5.0
mJ
Single Pulse Avalanche Energyb
Repetitive Avalanche
Maximum Power Dissipation
TC = 25 °C
Peak Diode Recovery dV/dtc
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
PD
50
W
dV/dt
- 5.0
V/ns
TJ, Tstg
- 55 to + 150
260d
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 27 mH, RG = 25 Ω, IAS = - 2.7 A (see fig. 12).
c. ISD ≤ - 2.7 A, dI/dt ≤ 600 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
-
-
110
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
-
-
50
Maximum Junction-to-Case (Drain)
RthJC
-
-
2.5
UNIT
°C/W
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = - 250 µA
- 250
-
-
V
ΔVDS/TJ
Reference to 25 °C, ID = - 1 mA
-
- 0.25
-
V/°C
VGS(th)
VDS = VGS, ID = - 250 µA
- 2.0
-
- 4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 250 V, VGS = 0 V
-
-
- 100
VDS = - 200 V, VGS = 0 V, TJ = 125 °C
-
-
- 500
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
RDS(on)
gfs
ID = - 1.7 Ab
VGS = - 10 V
VDS = - 50 V, ID = - 1.7 A
µA
-
-
3.0
Ω
0.9
-
-
S
-
220
-
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5
-
75
-
-
11
-
pF
-
-
14
-
-
3.1
Qgd
-
-
6.8
td(on)
-
11
-
tr
-
14
-
-
20
-
-
17
-
-
4.5
-
-
7.5
-
-
-
- 2.7
-
-
- 11
-
-
- 5.8
V
-
150
220
ns
-
870
1300
nC
td(off)
VGS = - 10 V
ID = - 1.7 A, VDS = - 200 V,
see fig. 6 and 13b
VDD = - 125 V, ID = - 1.7 A,
RG = 21 Ω, RD = 70 Ω, see fig. 10b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
nC
ns
D
nH
G
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulsed Diode Forward Currenta
ISM
Body Diode Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
A
G
S
TJ = 25 °C, IS = - 2.7 A, VGS = 0 Vb
TJ = 25 °C, IF = - 1.7 A, dI/dt = 100 A/µsb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
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Document Number: 91282
S-81392-Rev. A, 07-Jul-08
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
1
-4.5V
20μs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
TJ = 25 ° C
1
V DS = -50V
20μs PULSE WIDTH
0.1
4
100
-I D , Drain-to-Source Current (A)
1
-4.5V
20μs PULSE WIDTH
TJ = 150 °C
10
100
-VDS , Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
BOTTOM -4.5V
TOP
1
6
7
8
9
10
Fig. 3 - Typical Transfer Characteristics
Fig. 1 - Typical Output Characteristics, TC = 25 °C
0.1
0.1
5
-VGS, Gate-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
TJ = 150 ° C
ID = -2.7A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig. 4 - Normalized On-Resistance vs. Temperature
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IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
300
Ciss
200
100
Coss
10
ISD , Reverse Drain Current (A)
C, Capacitance (pF)
400
Crss
0
1
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
1.0
100
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
-IID , Drain Current (A)
-VGS , Gate-to-Source Voltage (V)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
12
8
10
100us
1
1ms
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
3
6
9
12
15
QG , Total Gate Charge (nC)
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
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4
5.0
100
VDS =-200V
VDS =-125V
VDS =-50V
0
4.0
Fig. 7 - Typical Source-Drain Diode Forward Voltage
ID = -1.7 A
16
3.0
VSD ,Source-to-Drain Voltage (V)
-VDS, Drain-to-Source Voltage (V)
20
V GS = 0 V
2.0
0.1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig. 8 - Maximum Safe Operating Area
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
RD
VDS
3.0
VGS
D.U.T.
RG
+VDD
-ID , Drain Current (A)
2.5
- 10 V
2.0
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
1.5
Fig. 10a - Switching Time Test Circuit
1.0
td(on)
0.5
td(off) tf
tr
VGS
10 %
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
0.01
0.01
0.00001
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
L
VDS
IAS
+ VDD
A
D.U.T.
RG
IAS
- 20 V
tp
Driver
0.01 Ω
tp
15 V
VDS
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
EAS , Single Pulse Avalanche Energy (mJ)
200
ID
-1.3A
-1.8A
BOTTOM -2.8A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
QGS
-
QGD
D.U.T.
VG
+ VDS
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
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Fig. 13b - Gate Charge Test Circuit
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
IRFR9214, IRFU9214, SiHFR9214, SiHFU9214
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
current transformer
+
-
-
RG
+
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
+
- VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
D=
P.W.
Period
VGS = - 10 V*
D.U.T. ISD waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt
Re-applied
voltage
VDD
Body diode forward drop
Inductor current
Ripple ≤ 5 %
*
ISD
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91282.
Document Number: 91282
S-81392-Rev. A, 07-Jul-08
www.vishay.com
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Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Document Number: 91000
Revision: 18-Jul-08
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