Fairchild IRFRU110A Advanced power mosfet Datasheet

IRFR/U110A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
RDS(on) = 0.4 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 4.7 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 10 µ A (Max.) @ VDS = 100V
Lower RDS(ON) : 0.289 Ω (Typ.)
D-PAK
I-PAK
2
1
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
Value
Ο
ID
Continuous Drain Current (TC=25 C )
Continuous Drain Current (TC=100 C )
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
1
O
19
+
_ 20
A
O
1
O
1
O
O3
59
mJ
4.7
A
2
Ο
Ο
Total Power Dissipation (TC=25 C )
V
2
mJ
6.5
V/ns
2.5
W
20
Linear Derating Factor
TL
A
3
Total Power Dissipation (TA=25 C ) *
TJ , TSTG
V
4.7
Ο
IDM
PD
Units
100
W
Ο
0.16
Operating Junction and
W/ C
- 55 to +150
Storage Temperature Range
Ο
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R θJC
Junction-to-Case
--
6.26
R θJA
Junction-to-Ambient *
--
50
R θJA
Junction-to-Ambient
--
110
Units
Ο
C /W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFR/U110A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/∆ TJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
Breakdown Voltage Temp. Coeff.
100
--
--
0.12
--
--
4.0
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.4
Ω
VGS=10V,ID=2.35A
4
O
Ω
VDS=40V,ID=2.35A
4
O
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
--
3.23
--
Ciss
Input Capacitance
--
190
240
Coss
Output Capacitance
--
55
65
Crss
Reverse Transfer Capacitance
--
21
25
td(on)
Turn-On Delay Time
--
10
30
Rise Time
--
14
40
Turn-Off Delay Time
--
28
70
Fall Time
--
18
50
Qg
Total Gate Charge
--
8.5
12
Qgs
Gate-Source Charge
--
1.6
--
Qgd
Gate-Drain(“Miller”) Charge
--
4.1
--
tf
Ο
--
Forward Transconductance
td(off)
VGS=0V,ID=250 µ A
See Fig 7
V/ C ID=250µ A
VDS=5V,ID=250 µ A
V
V
2.0
Gate Threshold Voltage
gfs
tr
Test Condition
nA
µA
pF
VGS=20V
VGS=-20V
VDS=100V
Ο
VDS=80V,TC=125 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=5.6A,
ns
RG=24Ω
See Fig 13
4 O
5
O
VDS=80V,VGS=10V,
nC
ID=5.6A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
ISM
Pulsed-Source Current
1
O
--
--
19
VSD
Diode Forward Voltage
4
O
--
--
1.5
V
TJ=25 C ,IS=4.7A,VGS=0V
trr
Reverse Recovery Time
--
85
--
ns
TJ=25 C ,IF=5.6A
Qrr
Reverse Recovery Charge
--
0.23
--
µC
diF/dt=100A/ µ s
4.7
A
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=4mH, I AS=4.7A, V DD=25V, R G=27Ω , Starting T J =25 C
O
O3 ISD <_ 5.6A, di/dt <_250A/ µs, V DD <_ BVDSS , Starting T J =25 oC
_2%
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
Ο
Ο
4
O
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
[A]
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
ID , Drain Current
ID , Drain Current
[A]
VGS
Top :
101
100
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
10-1
10-1
100
101
150 oC
100
25 oC
- 55 oC
10-1
101
2
3. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
[A]
VDS , Drain-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
0.8
0.6
VGS = 10 V
0.4
VGS = 20 V
0.2
@ Note : TJ = 25 oC
IDR , Reverse Drain Current
RDS(on) , [Ω ]
Drain-Source On-Resistance
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
5
10
15
100
20
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
150 oC
25 oC
10-1
0.4
0.0
0
101
ID , Drain Current [A]
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
210
C iss
[V]
280
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
Crss= Cgd
VGS , Gate-Source Voltage
Capacitance
[pF]
350
C oss
140
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
70
00
10
101
VDS , Drain-Source Voltage [V]
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID = 5.6 A
0
0
2
4
6
QG , Total Gate Charge [nC]
8
10
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRFR/U110A
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
3.0
2.5
2.0
1.5
1.0
2. ID = 2.8 A
0.0
-75
175
-25
0
25
50
75
100
125
150
175
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
5
[A]
[A]
-50
TJ , Junction Temperature [ oC]
102
101
ID , Drain Current
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
DC
100
@ Notes :
1. TC = 25 oC
4
3
2
1
2. TJ = 150 oC
3. Single Pulse
10-1
100
101
0
25
102
50
75
100
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
ZθJC(t) ,
ID , Drain Current
@ Notes :
1. VGS = 10 V
0.5
D=0.5
@ Notes :
1. Zθ J C (t)=6.26
0.2
100
o C/W
Max.
0.1
2. Duty Factor, D=t1 /t2
0.05
3. TJ M -TC =PD M *Zθ J C (t)
PDM
0.02
0.01
t1
single pulse
10- 1
10- 5
t2
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
125
150
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50KΩ
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (I G)
Resistor
Charge
Current Sampling (I D)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated V DS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRFR/U110A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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Definition of Terms
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Definition
Advance Information
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This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
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changes at any time without notice in order to improve
design.
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