Fairchild IRFS550A Advanced power mosfet Datasheet

IRFS550A
Advanced Power MOSFET
FEATURES
BVDSS = 100 V
Avalanche Rugged Technology
RDS(on) = 0.04 Ω
Rugged Gate Oxide Technology
Lower Input Capacitance
ID = 21 A
Improved Gate Charge
Extended Safe Operating Area
TO-220F
175 C Operating Temperature
Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
Ο
Lower RDS(ON) : 0.032 Ω (Typ.)
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
VDSS
Characteristic
Drain-to-Source Voltage
21
14.8
Ο
1
O
Drain Current-Pulsed
VGS
Gate-to-Source Voltage
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
O
1
O
1
O
O3
2
Total Power Dissipation (TC=25 C )
Ο
TJ , TSTG
V
Continuous Drain Current (TC=100 C)
IDM
PD
Units
100
Continuous Drain Current (TC=25 C)
Ο
ID
Value
Linear Derating Factor
Operating Junction and
A
160
A
+
_ 20
V
588
mJ
21
A
4.6
mJ
6.5
V/ns
46
W
0.31
W/ C
Ο
- 55 to +175
Storage Temperature Range
Ο
TL
Maximum Lead Temp. for Soldering
C
300
Purposes, 1/8” from case for 5-seconds
Thermal Resistance
Symbol
Characteristic
Typ.
Max.
R θJC
Junction-to-Case
--
3.27
R θJA
Junction-to-Ambient
--
62.5
Units
Ο
C /W
Rev. B
©1999 Fairchild Semiconductor Corporation
N-CHANNEL
POWER MOSFET
IRFS550A
Electrical Characteristics (TC=25 C unless otherwise specified)
Ο
Symbol
Characteristic
BVDSS
Drain-Source Breakdown Voltage
∆ BV/ ∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
Min. Typ. Max. Units
100
--
--
V
Ο
0.11
--
V/ C
2.0
--
4.0
V
Gate-Source Leakage , Forward
--
--
100
Gate-Source Leakage , Reverse
--
--
-100
--
--
10
--
--
100
--
--
0.04
Ω
VGS=10V,ID=10.5A
4
O
--
Ω
VDS=40V,ID=10.5A
4
O
Gate Threshold Voltage
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
--
22.53
Ciss
Input Capacitance
--
1750 2270
Coss
Output Capacitance
--
420
485
Crss
Reverse Transfer Capacitance
--
185
215
td(on)
Turn-On Delay Time
--
17
50
Rise Time
--
20
50
Turn-Off Delay Time
--
80
160
Fall Time
--
45
100
Qg
Total Gate Charge
--
75
97
Qgs
Gate-Source Charge
--
13.2
--
Qgd
Gate-Drain(“Miller”) Charge
--
34.8
--
td(off)
tf
VGS=0V,ID=250 µA
ID=250µ A
See Fig 7
--
Breakdown Voltage Temp. Coeff.
gfs
tr
Test Condition
nA
µA
pF
VDS=5V,ID=250 µA
VGS=20V
VGS=-20V
VDS=100V
Ο
VDS=80V,TC=150 C
VGS=0V,VDS=25V,f =1MHz
See Fig 5
VDD=50V,ID=40A,
ns
RG=6.2 Ω
See Fig 13
4 O
5
O
VDS=80V,VGS=10V,
nC
ID=40A
See Fig 6 & Fig 12
4 O
5
O
Source-Drain Diode Ratings and Characteristics
Symbol
Characteristic
Min. Typ. Max. Units
Test Condition
IS
Continuous Source Current
--
--
21
ISM
Pulsed-Source Current
1
O
--
--
160
VSD
Diode Forward Voltage
4
O
--
--
1.6
V
TJ=25 C ,IS=21A,VGS=0V
trr
Reverse Recovery Time
--
135
--
TJ=25 C ,IF=40A
Qrr
Reverse Recovery Charge
--
0.65
--
ns
µC
A
Notes ;
Temperature
1
O Repetitive Rating : Pulse Width Limited by Maximum Junction
o
2
L=2mH, I AS=21A, V DD=25V, R G=27 Ω , Starting T J =25 C
O
O3 ISD <_ 40A, di/dt <_ 470A/ µs, VDD<_ BVDSS , Starting T J =25 oC
_2%
4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <
O
Essentially
Independent
of
Operating
Temperature
5
O
Integral reverse pn-diode
in the MOSFET
Ο
Ο
diF/dt=100A/ µs
4
O
N-CHANNEL
POWER MOSFET
IRFS550A
Fig 1. Output Characteristics
VGS
15V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
[A]
Top :
ID , Drain Current
[A]
102
ID , Drain Current
Fig 2. Transfer Characteristics
1
10
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
10-1
100
102
175 oC
101
25 oC
- 55 oC
100
101
2
3. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
[A]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
0.06
0.05
IDR , Reverse Drain Current
RDS(on) , [Ω]
Drain-Source On-Resistance
@ Notes :
1. VGS = 0 V
2. VDS = 40 V
VGS = 10 V
0.04
0.03
VGS = 20 V
0.02
0.01
@ Note : TJ = 25 oC
25
50
75
100
125
150
101
175
@ Notes :
1. VGS = 0 V
175 oC
o
2. 250 µs Pulse Test
25 C
100
0.4
0.00
0
102
0.6
0.8
ID , Drain Current [A]
1.0 1.2
1.4
1.6
1.8
2.0
2.2
2.4 2.6
2.8
VSD , Source-Drain Voltage [V]
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd
[V]
Capacitance
[pF]
C iss
Crss= Cgd
VGS , Gate-Source Voltage
3000
2000
C oss
1000
00
10
@ Notes :
1. VGS = 0 V
C rss
2. f = 1 MHz
101
VDS , Drain-Source Voltage [V]
VDS = 20 V
10
VDS = 50 V
VDS = 80 V
5
@ Notes : ID =40.0 A
0
0
10
20
30
40
50
60
QG , Total Gate Charge [nC]
70
80
N-CHANNEL
POWER MOSFET
Fig 7. Breakdown Voltage vs. Temperature
1.2
1.1
1.0
0.9
Fig 8. On-Resistance vs. Temperature
RDS(on) , (Normalized)
Drain-Source On-Resistance
BVDSS , (Normalized)
Drain-Source Breakdown Voltage
IRFS550A
@ Notes :
1. VGS = 0 V
2. ID = 250 µA
0.8
-75
-50
-25
0
25
50
75
100
125
150
175
3.0
2.5
2.0
1.5
1.0
@ Notes :
1. VGS = 10 V
0.5
2. ID = 20.0 A
0.0
-75
200
-50
-25
0
25
50
75
100
125
150
175
200
TJ , Junction Temperature [ oC]
TJ , Junction Temperature [ oC]
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
[A]
100 µs
10 µs
ID , Drain Current
102
1 ms
10 ms
100 ms
101
DC
@ Notes :
1. TC = 25 oC
100
20
15
10
5
2. TJ = 175 oC
3. Single Pulse
100
101
0
25
102
50
75
100
125
Tc , Case Temperature [ oC]
VDS , Drain-Source Voltage [V]
Thermal Response
Fig 11. Thermal Response
D=0.5
100
0.2
@ Notes :
1. Zθ J C (t)=3.27
0.1
o
C/W Max.
2. Duty Factor, D=t1 /t2
0.05
3. TJ M -TC =PD M *Z
θJC
10- 1
(t)
0.02
PDM
0.01
t1
t2
single pulse
θ
10-1
Z JC(t) ,
ID , Drain Current
[A]
25
Operation in This Area
is Limited by R DS(on)
10- 2
10- 5
10- 4
10- 3
10- 2
10- 1
t 1 , Square Wave Pulse Duration
100
[sec]
101
150
175
N-CHANNEL
POWER MOSFET
IRFS550A
Fig 12. Gate Charge Test Circuit & Waveform
“ Current Regulator ”
50K Ω
12V
VGS
Same Type
as DUT
Qg
200nF
10V
300nF
VDS
Qgd
Qgs
VGS
DUT
3mA
R1
R2
Current Sampling (I G)
Resistor
Charge
Current Sampling (I D)
Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vout
90%
VDD
Vin
( 0.5 rated V DS )
RG
DUT
Vin
10V
10%
td(on)
tr
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
LL
VDS
Vary tp to obtain
required peak ID
BVDSS
IAS
ID
RG
C
DUT
ID (t)
VDD
VDS (t)
VDD
10V
tp
tp
Time
N-CHANNEL
POWER MOSFET
IRFS550A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
--
IS
L
Driver
VGS
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by “RG”
• IS controlled by Duty Factor “D”
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
VDD
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Definition of Terms
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Definition
Advance Information
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product development. Specifications may change in
any manner without notice.
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First Production
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changes at any time without notice in order to improve
design.
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