IRFS840A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4.6 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS Characteristic Drain-to-Source Voltage o ID Continuous Drain Current (TC=25 C ) Drain Current-Pulsed VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt PD TJ , TSTG TL Units 500 V 4.6 o Continuous Drain Current (TC=100 C ) IDM Value A 2.9 1 O 32 + _ 30 A O 1 O 1 O O3 647 mJ 4.6 A 2 Total Power Dissipation (TC=25 oC ) Linear Derating Factor Operating Junction and V 4.4 mJ 3.5 V/ns 44 W 0.35 W/ C o - 55 to +150 Storage Temperature Range o Maximum Lead Temp. for Soldering C 300 Purposes, 1/8 ” from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R θ JC Junction-to-Case -- 2.86 o R θ JA Junction-to-Ambient -- 62.5 C /W Rev. B ©1999 Fairchild Semiconductor Corporation N-CHANNEL POWER MOSFET IRFS840A Electrical Characteristics (TC=25 oC unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage ∆BV/∆TJ Breakdown Voltage Temp. Coeff. VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Gate Threshold Voltage 500 -- -- -- 0.66 -- 2.0 -- 4.0 VDS=5V,ID=250 µA VGS=30V -- -- 100 -- -- -100 -- -- 10 -- -- 100 -- -- 0.85 Ω VGS=10V,ID=2.3A 4 O -- Ω VDS=50V,ID=2.3A 4 O Drain-to-Source Leakage Current Static Drain-Source On-State Resistance -- 4.86 Ciss Input Capacitance -- 1190 1550 Coss Output Capacitance -- 150 175 Crss Reverse Transfer Capacitance -- 66 75 td(on) Turn-On Delay Time -- 18 45 Rise Time -- 22 55 Turn-Off Delay Time -- 83 175 Fall Time -- 30 70 Qg Total Gate Charge -- 57 74 Qgs Gate-Source Charge -- 7.5 -- Qgd Gate-Drain( “Miller” ) Charge -- 28.4 -- tf V See Fig 7 Gate-Source Leakage , Reverse Forward Transconductance td(off) VGS=0V,ID=250 µA V/ oC ID=250 µA Gate-Source Leakage , Forward gfs tr V Test Condition nA µA pF VGS=-30V VDS=500V o VDS=400V,TC=125 C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=250V,ID=8A, ns RG=9.1Ω See Fig 13 4 O 5 O VDS=400V,VGS=10V, nC ID=8A See Fig 6 & Fig 12 4 O 5 O Source-Drain Diode Ratings and Characteristics Symbol Characteristic Min. Typ. Max. Units Test Condition IS Continuous Source Current -- -- ISM Pulsed-Source Current 1 O -- -- 32 VSD Diode Forward Voltage O -- -- 1.4 V TJ=25 oC ,IS=4.6A,VGS=0V trr Reverse Recovery Time -- 370 -- ns TJ=25 C ,IF=8A Qrr Reverse Recovery Charge -- 3.9 -- µC diF/dt=100A/ µs 4 4.6 A Notes ; 1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature O o 2 L=55mH, I =4.6A, V =50V, R =27Ω, Starting T =25 C O AS DD G J o _ O3 ISD <_8A, di/dt <_160A/ µs, VDD < BVDSS , Starting T J =25 C _ < Pulse Test : Pulse Width = 250 s, Duty Cycle 2% 4 µ O 5 Essentially Independent of Operating Temperature O Integral reverse pn-diode in the MOSFET o 4 O N-CHANNEL POWER MOSFET IRFS840A Fig 2. Transfer Characteristics [A] VGS Top : 15V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 101 101 ID , Drain Current ID , Drain Current [A] Fig 1. Output Characteristics 100 @ Notes : 1. 250µs Pulse Test 2. TC = 25 oC 10-1 10-1 100 150 oC 100 25 oC - 55 oC 10-1 101 2 4 [A] IDR , Reverse Drain Current RDS(on) , [Ω ] Drain-Source On-Resistance Fig 3. On-Resistance vs. Drain Current 2.0 1.5 VGS = 10 V 1.0 VGS = 20 V @ Note : TJ = 25 oC 0.0 0 5 10 15 20 25 100 30 @ Notes : 1. VGS = 0 V 150 oC 2. 250 µs Pulse Test 25 oC 10-1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Crss= Cgd C iss 1000 @ Notes : 1. VGS = 0 V 2. f = 1 MHz C rss 101 VDS , Drain-Source Voltage [V] [V] Fig 6. Gate Charge vs. Gate-Source Voltage VGS , Gate-Source Voltage [pF] Capacitance Ciss= Cgs+ Cgd ( Cds= shorted) Coss= Cds+ Cgd 00 10 10 101 Fig 5. Capacitance vs. Drain-Source Voltage C oss 8 VSD , Source-Drain Voltage [V] 2000 500 6 Fig 4. Source-Drain Diode Forward Voltage ID , Drain Current [A] 1500 3. 250µs Pulse Test VGS , Gate-Source Voltage [V] VDS , Drain-Source Voltage [V] 0.5 @ Notes : 1. VGS = 0 V 2. VDS = 50 V VDS = 100 V 10 VDS = 250 V VDS = 400 V 5 @ Notes : ID = 8.0 A 0 0 10 20 30 40 QG , Total Gate Charge [nC] 50 60 N-CHANNEL POWER MOSFET 1.1 1.0 0.9 2. ID = 250 µA -25 0 25 50 75 100 125 150 Fig 8. On-Resistance vs. Temperature 3.0 2.5 2.0 1.5 1.0 @ Notes : 1. VGS = 10 V 2. ID = 4.0 A 0.5 0.0 -75 175 -50 -25 0 25 50 75 100 125 150 175 TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature [A] TJ , Junction Temperature [oC] Operation in This Area is Limited by RDS(on) 100 µs 1 ms 101 ID , Drain Current 102 -50 10 µs 10 ms 100 ms 100 DC 10-1 @ Notes : 1. TC = 25 oC 5 4 3 2 1 2. TJ = 150 oC 3. Single Pulse 10-2 100 101 102 0 25 103 50 75 100 Tc , Case Temperature [oC] VDS , Drain-Source Voltage [V] Fig 11. Thermal Response Thermal Response [A] 0.8 -75 ID , Drain Current @ Notes : 1. VGS = 0 V RDS(on) , (Normalized) Drain-Source On-Resistance Fig 7. Breakdown Voltage vs. Temperature 1.2 D=0.5 100 0.2 @ Notes : 1. Zθ J C (t)=2.86 o C/W Max. 0.1 0.05 /t2 2. Duty Factor, D=t 1 10- 1 3. TJ M -TC =PD M *Zθ J C (t) 0.02 ZθJC(t) , BVDSS , (Normalized) Drain-Source Breakdown Voltage IRFS840A 0.01 PDM t1 single pulse t2 10- 2 10- 5 10- 4 10- 3 10- 2 10- 1 t 1 , Square Wave Pulse Duration 100 [sec] 101 125 150 N-CHANNEL POWER MOSFET IRFS840A Fig 12. Gate Charge Test Circuit & Waveform “ Current Regulator ” 50KΩ 12V VGS Same Type as DUT Qg 200nF 10V 300nF VDS Qgd Qgs VGS DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10V 10% td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 10V tp tp Time N-CHANNEL POWER MOSFET IRFS840A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by “RG” • IS controlled by Duty Factor “D” Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf Body Diode Forward Voltage Drop VDD TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.