IRF IRFY9130CM Power mosfet p-channel(bvdss=-100v, rds(on)=0.3ohm, id=-11.2a) Datasheet

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Provisional Data Sheet No. PD 9.1293A
IRFY9130CM
HEXFET® POWER MOSFET
P-CHANNEL
-100 Volt, 0.3Ω HEXFET
Product Summary
International Rectifier’s HEXFET technology is the key to
its advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance.
HEXFET power MOSFETs also feature all of the wellestablished advantages of MOSFETs, such as voltage
control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited
for applications such as switching power supplies, motor
controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where
high reliability is required.
Part Number
BV DSS
R DS(on)
ID
IRFY9130CM
-100V
0.3Ω
-11.2A
Features
n
n
n
n
Hermetically Sealed
Electrically Isolated
Simple Drive Requirements
Ease of Paralleling
The HEXFET power MOSFET’s totally isolated package
eliminates the need for additional isolating material between
the device and the heatsink. This improves ther mal efficiency and reduces drain capacitance.
Absolute Maximum Ratings
Parameter
I D @ VGS= -10V, TC = 25°C
I D @ VGS= -10V, TC = 100°C
I DM
PD @ TC = 25°C
VGS
EAS
I AR
EAR
dv/dt
TJ
Tstg
IRFY9130CM
Continuous Drain Current
-11.2
Continuous Drain Current
-7.1
Pulsed Drain Current 
-44
Max. Power Dissipation
75
Linear Derating Factor
0.6
Gate-to-Source Voltage
±20
Single Pulse Avalance Energy ‚
400
Avalance Current 
-11.2
Repetitive Avalanche Energy 
7.5
Peak Diode Recovery dv/dt ƒ
-5.5
Operating Junction
-55 to 150
Storage Temperature Range
Lead Temperature
300 (0.063 in (1.6mm) from case for 10 sec)
Weight
4.3(typical)
To Order
Units
A
W
W/K
V
mJ
A
mJ
V/ns
°C
g
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IRFY9130CM Device
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
—
-0.1
—
—
—
-2.0
2.5
—
—
—
—
—
—
—
—
0.30
0.35
-4.0
—
-25
-250
—
—
14.7
1.0
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
30
7.1
2.1
60
140
140
140
—
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
I GSS
I GSS
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
800
350
125
—
—
—
Test Conditions
V
VGS = 0V, ID = -1.0mA
V/°C Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -7.1A „
VGS = -10V, ID = -11.2A „
V
VDS = VGS, I D = -250µA
S ( ) VDS ≥ -15V, IDS = -7.1A „
VDS = 0.8 x max. rating,VGS = 0V
µA
VDS = 0.8 x max. rating
VGS = 0V, TJ = 125°C
V GS = -20V
nA
VGS = 20V
VGS = -10V, ID = -11.2A
nC
VDS = Max. Rating x 0.5
see figures 6 and 13
VDD = -50V, ID = -11.2A
RG = 7.5Ω, VGS = -10V
ns
Ω
Ω
BVDSS
see figure 10
nH
pF
Measured from the drain
lead, 6mm (0.25 in.) from
package to center of die.
Modified MOSFET symbol
showing the internal
inductances.
Measured from the
source lead, 6mm (0.25
in.) from package to
source bonding pad.
VGS = 0v, VDS = -25V
f = 1.0MHz.
see figure 5
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
—
—
—
—
-11.2
-44
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
—
—
-4.7
250
3.0
V
ns
µC
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = -11.2A, VGS = 0V „
Tj = 25°C, I F = -11.2A, di/dt ≤ -100 A/µs
VDD ≤ -50 V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC Junction-to-Case
RthJA Junction-to-Ambient
RthCS Case-to-Sink
Min Typ Max Units
—
—
—
—
—
0.21
To Order
1.67
80 K/W
—
Test Conditions
Typical socket mount
Mounting surface flat, smooth
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IRFY9130CM Device
Fig. 1 — Typical Output Characteristics
TC = 25°C
Fig. 2 —Typical Output Characteristics
TC = 150°C
-11.2
Fig. 3 — Typical Transfer Characteristics
Fig. 4 — Normalized On-Resistance vs. Temperature
-11.2
Fig. 5 — Typical Capacitance vs. Drain-to-Source
Voltage
Fig. 6 — Typical Gate Charge vs. Gate-to-Source
Voltage
To Order
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IRFY9130CM Device
100
-I D , D rai n C u rre n t (A )
O P E R AT IO N I N T H IS A R E A L IM I T E D
B Y R D S(on)
100µs
10
1m s
TC = 2 5 °C
T J = 1 5 0 °C
S ing le P uls e
1
1
10ms
A
10
100
1000
-V D S , D ra in -to -S o u rc e V o lta g e (V )
Fig. 7 — Typical Source-to-Drain Diode Forward
Voltage
Fig. 8 — Maximum Safe Operating Area
Negative I D, Drain Current (Amps)
12
9
6
3
A
0
25
50
75
100
125
150
T C , C a s e T em pe ra ture (°C )
Fig. 9 — Maximum Drain Current vs. Case Temperature
Fig. 10a — Switching Time Test Circuit
Fig. 10b — Switching Time Waveforms
To Order
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IRFY9130CM Device
T h e r m a l R e sp o n se (Z thJC )
10
1
D = 0.5 0
0 .20
0 .10
0.05
0.1
0.02
0 .01
SIN G LE PU L SE
(TH E R M AL R ESPO N S E)
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t 1 , R e c ta n g u la r P u ls e D u r a tio n ( se c)
Fig. 11 — Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
E AS , Sing le P ulse A valan che E ne rg y (m J)
Fig. 12a — Unclamped Inductive Test Circuit
Fig. 12b — Unclamped Inductive Waveforms
400
300
200
100
0
I = -1 2A
V
= -2 5 V
25
50
A
75
100
125
150
175
Sta rtin g T J , Ju nction Te mp e rature (°C )
Fig. 12c — Max. Avalanche Energy vs. Current
To Order
Fig. 13a — Gate Charge Test Circuit
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Notes:
IRFY9130CM Device
 Repetitive Rating; Pulse width limited by maximum
junction temperature (see figure 11).
‚ @ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * ( ) * [BVDSS/(BVDSS-VDD)]
Peak IL = -11.2A, VGS = -10V, 25 ≤ RG ≤ 200Ω
ƒ I SD ≤ -11.2A, di/dt ≤ -140A/µs, V DD ≤ BVDSS, T J ≤ 150°C
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
Fig. 13b — Basic Gate Charge Waveform
Case Outline and Dimensions
Pin 1 - Drain
Pin 2 - Source
Pin 3 - Gate
3
1
2
TO-257AA
NON-STANDARD PIN CONFIGURATION
Pin 1 - Gate
Pin 2 - Drain
Pin 3 - Source
Order Part Type IRFY9130C
NOTES:
1. Dimensioning and tolerancing per ANSI Y14.5M-1982
2. Controlling dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4. Outline conforms to JEDEC outline TO-257AA
CAUTION
BERYLLIAWARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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