IRF IRG4BC10SD-S Insulated gate bipolar transistor with ultrafast soft recovery diode(vces=600v, vce(on)typ.=1.10v, @vge=15v, ic=2.0a) Datasheet

PD - 94255
IRG4BC10SD-S
IRG4BC10SD-L
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Extremely low voltage drop 1.1Vtyp. @ 2A
• S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
• Industry standard D2Pak & TO-262 packages
Standard Speed
CoPack IGBT
C
VCES = 600V
VCE(on) typ. = 1.10V
G
@VGE = 15V, IC = 2.0A
E
n-ch an nel
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and
Diode losses
D2Pak
IRG4BC10SD-S
TO-262
IRG4BC10SD-L
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector CurrentQ
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
14
8.0
18
18
4.0
18
± 20
38
15
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
RθJA
Wt
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Min.
Junction-to-Case - IGBT
–––
Junction-to-Case - Diode
–––
Case-to-Sink, flat, greased surface
–––
Junction-to-Ambient, typical socket mount U
–––
Junction-to-Ambient (PCB Mount, steady state)V –––
Weight
–––
Typ.
–––
–––
0.50
–––
–––
2.0(0.07)
Max.
3.3
7.0
–––
80
40
–––
Units
°C/W
g (oz)
1
06/12/01
IRG4BC10SD-S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
∆V(BR)CES/∆TJ
VCE(on)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
VFM
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown VoltageS 600
—
Temperature Coeff. of Breakdown Voltage — 0.64
Collector-to-Emitter Saturation Voltage
— 1.58
— 2.05
— 1.68
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
— -9.5
Forward TransconductanceT
3.65 5.48
Zero Gate Voltage Collector Current
—
—
—
—
Diode Forward Voltage Drop
—
1.5
—
1.4
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
— V/°C VGE = 0V, IC = 1.0mA
1.8
IC = 8.0A
VGE = 15V
—
V
IC = 14.0A
See Fig. 2, 5
—
IC = 8.0A, TJ = 150°C
6.0
VCE = V GE, IC = 250µA
— mV/°C VCE = V GE, IC = 250µA
—
S
VCE = 100V, IC =8.0A
250
µA
VGE = 0V, VCE = 600V
1000
VGE = 0V, VCE = 600V, TJ = 150°C
1.8
V
IC =4.0A
See Fig. 13
1.7
IC =4.0A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
15
22
2.42 3.6
6.53 9.8
76
—
32
—
815 1200
720 1080
0.31 —
3.28 —
3.60 10.9
1.46 2.6
70
—
36
—
890
—
890
—
3.83 —
7.5
—
280
—
30
—
4.0
—
28
42
38
57
2.9 5.2
3.7 6.7
40
60
70 105
280
—
235
—
nC
ns
mJ
mJ
ns
mJ
nH
pF
ns
A
nC
A/µs
Conditions
IC = 8.0A
VCC = 400V
See Fig. 8
VGE = 15V
TJ = 25°C
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
See Fig. 9, 10, 18
IC = 5.0A
TJ = 150°C, See Fig. 10,11, 18
IC = 8.0A, VCC = 480V
VGE = 15V, RG = 100Ω
Energy losses include "tail" and
diode reverse recovery.
Measured 5mm from package
VGE = 0V
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
14
IF =4.0A
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
15
VR = 200V
TJ = 25°C See Fig.
16
di/dt = 200A/µs
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C
17
Details of note Q through T are on the last page
2
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IRG4BC10SD-S/L
10.0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C Ta = 55°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 9.2W for Heatsink Mount
Power Dissipation = 1.8W for typical
PCB socket Mount
Load Current ( A )
8.0
60% of rated
voltage
6.0
Ideal diodes
4.0
2.0
0.0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 25 °C
TJ = 150 °C
10
V
= 15V
80µs PULSE WIDTH
GE
1
0.5
1.0
1.5
2.0
2.5
3.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
100
TJ = 150 °C
10
TJ = 25 °C
V
= 50V
5µs PULSE WIDTH
CC
5µs PULSE WIDTH
1
6
8
10
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC10SD-S/L
3.00
16
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
I C = 16 A
2.50
12
2.00
8
IC = 8 A
1.50
4
0
25
50
75
100
125
150
IC = 4 A
1.00
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
TC , Case Temperature ( °C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC10SD-S/L
C, Capacitance (pF)
400
Cies
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
300
C
oes
200
Cres
100
20
VGE , Gate-to-Emitter Voltage (V)
500
0
1
10
10
5
0
100
0
Total Switching Losses (mJ)
Total Switching Losses (mJ)
100
3.50
3.45
3.40
3.35
3.30
40
60
80
RGRG, Gate
, GateResistance
Resistance (Ohm)
(Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
15
20
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC = 480V
V GE = 15V
TJ = 25 ° C
3.55
I C = 8A
20
5
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0
VCC = 400V
I C = 8A
15
VCE , Collector-to-Emitter Voltage (V)
3.60
100
RG =100Ω
Ohm
VGE = 15V
VCC = 480V
IC = 16 A
10
IC = 8 A
IC = 4 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC10SD-S/L
100
= 100
100 Ω
= 150 ° C
= 480V
= 15V
I C , Collector Current (A)
RG
TJ
VCC
12 VGE
9
6
VGE = 20V
T J = 125 oC
10
3
SAFE OPERATING AREA
0
0
4
8
12
16
1
20
1
I C , Collector Current (A)
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector Current
Fig. 12 - Turn-Off SOA
100
Instantaneous Forward Current ( A )
Total Switching Losses (mJ)
15
TJ = 150°C
10
TJ = 125°C
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
F orward V
oltage DDrop
rop -- VVFM
Forward
Voltage
F M((VV) )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC10SD-S/L
50
14
I F = 8.0A
45
12
I F = 4.0A
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
I F = 8.0A
10
I F = 4.0A
Irr- ( A)
trr- (nC)
40
35
8
6
30
4
25
2
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
20
100
di f /dt - (A/µ s)
0
100
1000
1000
di f /dt - (A/µ s)
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 2 00 V
T J = 1 25°C
T J = 2 5°C
VR = 20 0V
T J = 1 25 °C
T J = 2 5°C
160
I F = 8.0A
di (rec) M/dt- (A /µs)
I F = 4.0A
Qrr- (nC)
120
I F = 8.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µ s)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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A
100
100
1000
di f /dt - (A/µ s )
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4BC10SD-S/L
Same ty pe
device as
D .U.T.
430µF
80%
of Vce
90%
D .U .T.
10%
Vge
VC
90%
t d(off)
10%
IC 5%
Fig. 18a - Test Circuit for Measurement of
tf
tr
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t d(on)
t=5µs
Eon
Eoff
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫ Ic dt
trr
id d t
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
E o n = VVce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫ Vd Ic dt
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC10SD-S/L
V g G AT E SIG NA L
DE VIC E U ND E R T E ST
CU R RE NT D .U .T.
VO L TA G E IN D.U .T.
CU R RE NT IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X I C @25°C
0 - 480V
50V
600 0µF
100V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4BC10SD-S/L
D2Pak Package Outline
1 0.54 (.415 )
1 0.29 (.405 )
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
10 .1 6 (.4 00 )
R E F.
-B-
4 .6 9 (.18 5)
4 .2 0 (.16 5)
6.47 (.2 55 )
6.18 (.2 43 )
1 5.49 (.6 10)
1 4.73 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5.28 (.2 08 )
4.78 (.1 88 )
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.55 (.0 22)
0.46 (.0 18)
0.9 3 (.0 37 )
0.6 9 (.0 27 )
0.25 (.0 10 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 55 )
1.1 4 (.0 45 )
B A M
M IN IM U M R EC O M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO LD E R D IP .
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS
1 - G ATE
2 - D RA IN
3 - SO U R C E
8 .89 (.35 0)
17 .78 (.70 0)
3.81 (.1 5 0)
2.0 8 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
10
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRG4BC10SD-S/L
TO-262 Package Outline
TO-262 Part Marking Information
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11
IRG4BC10SD-S/L
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.16 1 )
3 .9 0 (.15 3 )
F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1.60 (.06 3)
1.50 (.05 9)
1 1.60 (.457 )
1 1.40 (.449 )
0.3 68 (.01 45 )
0.3 42 (.01 35 )
1 5.42 (.60 9)
1 5.22 (.60 1)
2 4.30 (.9 57 )
2 3.90 (.9 41 )
TR L
10.90 (.42 9)
10.70 (.42 1)
1.75 (.0 69 )
1.25 (.0 49 )
4.72 (.1 36 )
4.52 (.1 78 )
1 6.10 (.6 3 4)
1 5.90 (.6 2 6)
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M A X.
60.00 (2.36 2)
MIN .
N OT ES :
1. C O MF OR MS TO EIA-418.
2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER.
3. D IM ENSIO N M EAS UR ED @ HU B.
4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE.
26.40 (1.0 39)
24.40 (.96 1)
30.40 (1.197)
M AX.
4
3
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
RVCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
U This only applies to TO-262 package.
V This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/01
12
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