PD - 95556 IRG4PC30FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Lead-Free Fast CoPack IGBT C VCES = 600V VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 31 17 120 120 12 120 ± 20 100 42 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. Units 0.24 6 (0.21) 1.2 2.5 40 °C/W g (oz) 1 7/26/04 IRG4PC30FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown Voltage 600 Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage Forward Transconductance 6.1 Zero Gate Voltage Collector Current Diode Forward Voltage Drop Gate-to-Emitter Leakage Current Typ. Max. Units V 0.69 V/°C 1.59 1.8 1.99 V 1.70 6.0 -11 mV/°C 10 S 250 µA 2500 1.4 1.7 V 1.3 1.6 ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 17A VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 17A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 12A See Fig. 13 IC = 12A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc t d(on) tr t d(off) tf Eon Eoff Ets td(on) tr t d(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. Typ. 51 7.9 19 42 26 230 160 0.63 1.39 2.02 42 27 310 310 3.2 13 1100 74 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 77 IC = 17A 12 nC VCC = 400V See Fig. 8 28 VGE = 15V TJ = 25°C ns IC = 17A, VCC = 480V 350 VGE = 15V, RG = 23Ω 230 Energy losses include "tail" and diode reverse recovery. mJ See Fig. 9, 10, 11, 18 3.9 TJ = 150°C, See Fig. 9, 10, 11, 18 ns IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses include "tail" and mJ diode reverse recovery. nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz 60 TJ = 25°C See Fig. ns 120 TJ = 125°C 14 IF = 12A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 TJ = 25°C See Fig. nC 600 TJ = 125°C 16 di/dt 200A/µs TJ = 25°C See Fig. A/µs TJ = 125°C 17 www.irf.com IRG4PC30FDPbF 25 Duty cycle: 50% T J = 125°C T sink = 90°C Gate drive as specified Turn-on losses include effects of reverse recovery Load Current ( A ) 20 Power Dissipation = 24W 15 60% of rated voltage 10 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) IC , Collector-to-Emitter Current (A) TJ = 25°C 100 TJ = 150°C 10 V GE = 15V 20µs PULSE WIDTH A 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com IC , Collector-to-Emitter Current (A) 1000 1000 100 TJ = 150°C TJ = 25°C 10 V CC = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 11 12 13 VGE, Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC30FDPbF 2.5 VGE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A) 40 30 20 10 0 25 50 75 100 125 I C = 34A 2.0 I C = 17A 1.5 I C = 8.5A A 1.0 150 -60 TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature VGE = 15V 80µs PULSE WIDTH -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 t 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC30FDPbF VGE = 0V Cies 1200 800 Coes 400 Cres A 0 1 VCE = 400V IC = 17A SHORTED Coes = Cce + Cgc 1600 C, Capacitance (pF) 20 f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce VGE , Gate-to-Emitter Voltage (V) 2000 10 16 12 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 2.00 1.90 A 1.80 20 40 60 R G, Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 60 10 = 480V = 15V = 25°C = 17A 2.10 0 40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switchig Losses (mJ) Total Switchig Losses (mJ) VCC VGE TJ IC 30 Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 2.20 20 80 IC = 34A I C = 17A 1 0.1 IC = 8.5A R G = 23 Ω V GE = 15V V CC = 480V -60 -40 -20 0 A 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC30FDPbF RG TJ VCC VGE 1000 = 23 Ω = 150°C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switchig Losses (mJ) 8.0 6.0 4.0 2.0 A 0.0 0 10 20 30 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 1 40 10 100 1000 VCE , Collector-to-Emitter Voltage (V) IC , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Instantaneous Forward Current - I F (A) 100 TJ = 150°C 10 TJ = 125°C TJ = 25°C 1 0.4 0.8 1.2 1.6 2.0 2.4 Forward Voltage Drop - V FM (V) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC30FDPbF 100 160 VR = 200V TJ = 125°C TJ = 25°C VR = 200V TJ = 125°C TJ = 25°C 120 I IRRM - (A) t rr - (ns) I F = 24A I F = 12A 80 I F = 6.0A I F = 24A I F = 12A 10 IF = 6.0A 40 0 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt di f /dt - (A/µs) 1000 Fig. 15 - Typical Recovery Current vs. dif/dt 600 10000 VR = 200V TJ = 125°C TJ = 25°C di(rec)M/dt - (A/µs) VR = 200V TJ = 125°C TJ = 25°C Q RR - (nC) 400 I F = 24A I F = 12A 200 1000 I F = 12A 100 IF = 24A IF = 6.0A 0 100 di f /dt - (A/µs) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com IF = 6.0A 1000 10 100 di f /dt - (A/µs) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC30FDPbF 90% Vge +Vge Same type device as D.U.T. Vce Ic 90% Ic 10% Vce Ic 5% Ic 430µF 80% of Vce D.U.T. td(off) tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = tx DUT VOLTAGE AND CURRENT Vce 10% Ic 90% Ic tr td(on) 10% Irr Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 ∫ t2 Eon = Vce ie dt t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +Vg 10% Vcc Vcc trr id dt tx ∫ t4 Erec = Vd id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC30FDPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Figure 18e. 18 ' D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V Figure 19. www.irf.com Figure 20. 9 IRG4PC30FDPbF Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19) Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNATIONAL RECT IFIER LOGO ASSEMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 07/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/