IRF IRGBC40 Insulated gate bipolar transistor(vces=600v, @vge=15v, ic=27a) Datasheet

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PD - 9.691A
IRGBC40F
INSULATED GATE BIPOLAR TRANSISTOR
Features
Fast Speed IGBT
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 600V
VCE(sat) ≤ 2.0V
G
@VGE = 15V, IC = 27A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
49
27
200
200
±20
15
160
65
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-63
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.50
—
2.0 (0.07)
0.77
—
80
—
Units
°C/W
g (oz)
Revision 0
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IRGBC40F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, IC = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
— 0.70 —
V/°C VGE = 0V, IC = 1.0mA
—
1.7 2.0
IC = 27A
VGE = 15V
—
2.2
—
V
IC = 49A
See Fig. 2, 5
—
1.9
—
IC = 27A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-12
— mV/°C VCE = VGE, IC = 250µA
9.2
12
—
S
VCE = 100V, IC = 27A
—
— 250
µA
VGE = 0V, VCE = 600V
—
— 1000
VGE = 0V, VCE = 600V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
59
80
IC = 27A
8.6
10
nC VCC = 400V
See Fig. 8
25
42
VGE = 15V
26
—
TJ = 25°C
37
—
ns
IC = 27A, VCC = 480V
240 410
VGE = 15V, RG = 10Ω
230 420
Energy losses include "tail"
0.65 —
3.0
—
mJ See Fig. 9, 10, 11, 14
3.65 6.0
28
—
TJ = 150°C,
37
—
ns
IC = 27A, VCC = 480V
380
—
VGE = 15V, RG = 10Ω
460
—
Energy losses include "tail"
6.0
—
mJ See Fig. 10, 14
7.5
—
nH Measured 5mm from package
1500 —
VGE = 0V
190
—
pF
VCC = 30V
See Fig. 7
20
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
RG= 10Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-64
To Order
Pulse width 5.0µs,
single shot.
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IRGBC40F
60
LO A D C U R R E N T (A )
For both :
Triangula r w ave:
D uty c y cle: 50%
TJ = 125°C
T sink = 90° C
G ate driv e as spe c ified
P ow e r Diss ipa tion = 2 8W
40
C lamp voltage:
80% of rated
S quare w ave:
60% of rated
voltage
20
Ideal diodes
0
0.1
1
10
100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
IC , C ollector-to-E mitter C urrent (A )
I C , Collector-to-E m itter C urrent (A)
1000
TJ = 25 °C
100
TJ = 15 0 °C
10
V G E = 1 5V
2 0µ s P U LS E W IDTH
1
0.1
1
100
T J = 15 0°C
10
T J = 2 5°C
1
0.1
V C C = 10 0 V
5 µs P U L S E W ID TH
0.01
5
10
10
15
V G E , G ate-to -E m itter V o lta ge (V )
V C E , C ollector-to-E m itter V oltage (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-65
To Order
20
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IRGBC40F
3.0
V G E = 15 V
V C E , C ollector-to-E m itter V oltage (V)
M axim um D C C ollector C urrent (A )
50
40
30
20
10
VG E = 1 5 V
80 µs P UL S E W ID TH
2.5
I C = 54 A
2.0
I C = 27 A
1.5
I C = 1 4A
1.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
1 00 120 140 160
TC , C ase Tem perature (°C )
T C , C ase Tem perature (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herm al Response (Z th JC )
1
D = 0 .5 0
0.2 0
0.1
0.1 0
PD M
0 .05
0.0 2
t
SIN G LE P UL SE
(TH ER MA L R E SP O NS E )
t2
N o te s:
1 . D u ty fa c to r D = t
0.0 1
0.01
0.00001
1
1
/ t
2
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D uration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-66
To Order
10
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IRGBC40F
3000
V G E , G ate-to-E m itter V oltage (V)
2500
C , C apacitance (pF)
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
16
Cies
2000
V C E = 4 00 V
I C = 27A
12
Coes
1500
1000
Cres
500
0
1
10
8
4
0
1 00
0
10
V C E , C ollector-to-E m itter V oltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
VC C
VG E
TC
IC
4 .7
30
40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
= 4 80 V
= 15 V
= 25°C
= 2 7A
To ta l S w itc hing Lo ss es (m J)
Total S w itching Losses (m J)
4 .8
20
Q g , Total G ate C harge (nC )
4 .6
4 .5
4 .4
4 .3
R G = 10 Ω
V GE = 1 5V
V CC = 48 0V
I C = 5 4A
10
I C = 2 7A
I C = 14 A
1
0
10
20
30
40
50
60
-60
R G , G ate R es istance (Ω )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-67
To Order
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IRGBC40F
RG
TC
VCC
VGE
16
1000
= 10 Ω
= 1 50°C
= 48 0V
= 1 5V
I C , C o lle c to r-to -E m itte r C u rre n t (A )
T o ta l S w itc h in g L o s s e s (m J )
20
12
8
4
VGGE E= 20 V
T J = 12 5°C
100
S A FE O P E RA TIN G A RE A
10
1
0
0
20
40
1
60
10
100
V C E , C o lle cto r-to -E m itte r V o lta g e (V )
I C , C o lle c to r-to -E m itte r C u rre n t (A )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
C-68
To Order
Section D - page D-12
1000
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