ETC1 IRGP4640D insulated gatebipolartransistor with ultrafast soft recovery diode Datasheet

ETC1 IRGP4640D insulated gatebipolartransistor with ultrafast soft recovery diode Datasheet

IRGP4640DPbF
IRGP4640D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
C
C
IC = 40A, TC = 100°C
tSC 5μs, TJ(max) = 175°C
G
VCE(on) typ. = 1.60V @ IC = 24A
E
n-channel
G
Gate
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
GC
E
E
GC
TO-247AD
IRGP4640D-EP
TO-247AC
IRGP4640DPbF
C
Collector
Features
E
Emitter
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Low V CE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Base part number
Package Type
IRGP4640DPbF
IRGP4640D-EPbF
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4640DPbF
IRGP4640D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
600
V
Continuous Collector Current
65
V CES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Continuous Collector Current
40
ILM
Clamped Inductive Load Current, VGE = 20V
Pulse Collector Current, VGE = 15V
e
72
c
96
IF @ TC = 25°C
Diode Continous Forward Current
65
IF @ TC = 100°C
Diode Continous Forward Current
40
IFM
Diode Maximum Forward Current
96
V GE
Continuous Gate-to-Emitter Voltage
±20
Transient Gate-to-Emitter Voltage
±30
PD @ TC = 25°C
Maximum Power Dissipation
250
PD @ TC = 100°C
Maximum Power Dissipation
125
TJ
Operating Junction and
TST G
Storage Temperature Range
A
V
W
-55 to +175
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (Diode)
f
Junction-to-Case (Diode) f
RCS
RJA
RJC (IGBT)
1
Junction-to-Case (IGBT)
Min.
Typ.
Max.
Units
°C/W
–––
–––
0.60
–––
–––
1.62
Case-to-Sink (flat, greased surface)
–––
0.24
–––
Junction-to-Ambient (typical socket mount)
–––
–––
40
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January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Units
Conditions
600
—
—
V
VGE = 0V, IC = 100μA
T emperature Coeff. of B reakdown Voltage
—
0.30
—
V/°C
—
1.60
1.90
Collector-to-Emitter Saturation Voltage
—
1.90
—
—
2.00
—
V(BR)CES
Collector-to-Emitter BreakdownVoltage
V(BR )CE S/T J
VCE(on)
IC = 24A, VGE = 15V, TJ = 25°C
V
Gate Threshold Voltage
4.0
—
6.5
VGE (th)/T J
Threshold Voltage temp. coefficient
—
-18
—
gfe
Forward Transconductance
—
17
—
S
ICES
Collector-to-Emitter Leakage Current
—
2.0
25
μA
—
775
—
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
—
1.80
2.6
—
1.28
—
—
—
±100
IC = 24A, VGE = 15V, TJ = 150°C
IC = 24A, VGE = 15V, TJ = 175°C
VGE(th)
VFM
d
VGE = 0V, IC = 1mA (25°C-175°C)
V
VCE = VGE, IC = 700μA
mV/°C VCE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 24A, PW = 80μs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 175°C
V
IF = 24A
nA
VGE = ±20V
IF = 24A, TJ = 175°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max.
Qg
Total Gate Charge (turn-on)
—
50
75
Q ge
Gate-to-Emitter Charge (turn-on)
—
13
20
Q gc
Gate-to-Collector Charge (turn-on)
—
21
31
Eon
Turn-On Switching Loss
—
115
201
Eoff
Turn-Off Switching Loss
—
600
700
Etotal
Total Switching Loss
—
715
901
td(on)
Turn-On delay time
—
41
53
tr
Rise time
—
22
31
td(off)
Turn-Off delay time
—
104
115
tf
Fall time
—
29
41
Eon
Turn-On Switching Loss
—
420
—
Units
Conditions
IC = 24A
nC
VGE = 15V
VCC = 400V
IC = 24A, VCC = 400V, VGE = 15V
μJ
RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
E nergy los s es include tail & diode revers e recovery
IC = 24A, VCC = 400V, VGE = 15V
ns
RG = 10, L = 200μH, LS = 150nH, TJ = 25°C
IC = 24A, VCC = 400V, VGE=15V
Eoff
Turn-Off Switching Loss
—
840
—
Etotal
Total Switching Loss
—
1260
—
E nergy los s es include tail & diode revers e recovery
td(on)
Turn-On delay time
—
40
—
IC = 24A, VCC = 400V, VGE = 15V
tr
Rise time
—
24
—
td(off)
Turn-Off delay time
—
125
—
tf
Fall time
—
39
—
Cies
Input Capacitance
—
1490
—
Coes
Output Capacitance
—
129
—
Cres
Reverse Transfer Capacitance
—
45
—
μJ
ns
RG=10, L= 200μH, LS=150nH, TJ = 175°C
RG = 10, L = 200μH, LS = 150nH
TJ = 175°C
pF
VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 175°C, IC = 96A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
VCC = 480V, Vp =600V
Rg = 10, VGE = +20V to 0V
—
—
μs
VCC = 400V, Vp =600V
Rg = 10, VGE = +15V to 0V
Erec
Reverse Recovery Energy of the Diode
—
621
—
μJ
TJ = 175°C
trr
Diode Reverse Recovery Time
—
89
—
ns
VCC = 400V, IF = 24A
Irr
Peak Reverse Recovery Current
—
37
—
A
VGE = 15V, Rg = 10, L =200μH, Ls = 150nH
Notes:
VCC = 80% (VCES), VGE = 20V, L = 100μH, RG = 10
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
R is measured at TJ of approximately 90°C.
2
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January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
70
300
60
250
200
40
Ptot (W)
IC (A)
50
30
150
100
20
50
10
0
0
25
50
75
100
125
150
175
25
50
75
100
125
150
175
T C (°C)
T C (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
1000
1000
100
100
IC (A)
IC (A)
10μsec
10
100μsec
1
10
1msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
1
1
10
100
1000
10000
10
100
VCE (V)
VCE (V)
Fig. 3 - Forward SOA
TC = 25°C, TJ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
90
90
80
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
ICE (A)
60
50
70
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
60
ICE (A)
70
40
50
40
30
30
20
20
10
10
0
0
0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
3
1000
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0
1
2
3
4
5
6
7
8
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
90
120
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
70
80
50
IF (A)
ICE (A)
60
100
40
30
-40°c
25°C
175°C
60
40
20
20
10
0
0
0
1
2
3
4
5
6
7
8
0.0
1.0
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
20
20
18
18
16
16
14
14
ICE = 12A
VCE (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
ICE = 24A
10
ICE = 48A
8
3.0
VF (V)
VCE (V)
12
2.0
12
10
ICE = 48A
8
6
6
4
4
2
2
0
ICE = 12A
ICE = 24A
0
5
10
15
20
5
10
VGE (V)
15
20
VGE (V)
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
120
20
18
100
16
T J = 25°C
TJ = 175°C
80
12
ICE = 12A
ICE (A)
VCE (V)
14
ICE = 24A
ICE = 48A
10
8
60
40
6
4
20
2
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
4
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0
5
10
15
VGE (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
1800
1000
1600
1400
Energy (μJ)
1200
Swiching Time (ns)
tdOFF
EOFF
1000
800
EON
600
100
tdON
tF
10
tR
400
200
0
1
0
10
20
30
40
50
60
10
20
30
40
50
IC (A)
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10; VGE = 15V
1000
1600
1400
EON
1000
Swiching Time (ns)
Energy (μJ)
1200
EOFF
800
600
tdOFF
100
tdON
400
tF
tR
200
10
0
0
25
50
75
100
125
0
25
50
75
100
125
RG ()
Rg ()
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 24A; VGE = 15V
40
45
RG = 10
40
35
35
30
RG = 22
IRR (A)
IRR (A)
30
25
RG = 47
20
20
RG = 100
15
15
10
10
5
0
10
20
30
40
50
60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
5
25
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0
25
50
75
100
125
RG (
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
45
4000
40
3500
35
10
3000
22
QRR (nC)
30
IRR (A)
48A
25
20
2500
47
24A
100
2000
1500
15
12A
1000
10
500
5
0
500
1000
0
1500
500
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 175°C
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 175°C
1000
Time (μs)
RG = 47
RG = 10
RG = 100
400
200
16
280
14
240
12
200
10
160
8
120
6
80
40
4
0
0
10
20
30
40
50
8
60
14
16
18
16
VGE, Gate-to-Emitter Voltage (V)
Capacitance (pF)
12
Fig. 22 - VGE vs. Short Circuit Time
VCC = 400V; TC = 25°C
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 175°C
Cies
1000
Coes
100
Cres
10
V CES = 300V
V CES = 400V
14
12
10
8
6
4
2
0
0
20
40
60
80
100
VCE (V)
Fig. 23 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
6
10
VGE (V)
IF (A)
10000
Current (A)
Energy (μJ)
800
RG = 22
1500
diF /dt (A/μs)
diF /dt (A/μs)
600
1000
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0
5 10 15 20 25 30 35 40 45 50 55
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
1
Thermal Response ( Z thJC )
D = 0.50
0.1
0.20
0.10
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
C
2
1
Ri (°C/W) i (sec)
0.2568 0.000311

0.3429
2
0.006347
Ci= iRi
Ci iRi
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
Thermal Response ( Z thJC )
10
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.001
0.0001
1E-006
J
0.01
R1
R1
J
1
1
R2
R2
2
3
2
Ci= iRi
Ci iRi
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
R3
R3
C

3
Ri (°C/W) i (sec)
0.693
0.001222
0.621
0.005254
0.307
0.038140
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
L
L
DUT
0
VCC
80 V +
-
1K
DUT
VCC
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
-5V
VCC
DUT /
DRIVER
DUT
VCC
Rg
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R=
VCC
ICM
100K
D1
DUT
C sense
VCC
Rg
22K
G force
DUT
0.0075μF
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
8
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Fig.C.T.6 - BVCES Filter Circuit
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
600
30
600
25
500
60
tf
500
50
90% ICE
V CE
300
C
200
400
15
300
5
20
100
0
EOFF Loss
0.60
0
0
-100
11.70
Time(µs)
11.90
600
300
QRR
ICE
500
10
tRR
Peak
IRR
-20
VCE (V)
-10
250
400
200
0
IRR (A)
-10
12.30
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
30
10%
Peak
IRR
-30
V CE
300
150
200
100
100
50
0
-40
-50
-0.15
-0.05
0.05
0.15
0.25
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 175°C using Fig. CT.4
9
12.10
Time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
20
10
5% V CE
EON
-5
0.10
30
90% test
200
5% ICE
-100
-0.40
C
10% ICE
100
0
40
ICE
10
5% V CE
tr
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ICE (A)
VCE (V)
ICE
20
VCE (V)
400
V CE
C
0
-100
-5.00
0.00
5.00
-50
10.00
time (µS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
(;$03/( 7+,6,6$1,5)3(
:,7+$66(0%/<
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TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
(;$03/( 7+,6,6$1,5*3%.'(
:,7+$66(0%/<
/27&2'(
$66(0%/('21::
,17+($66(0%/</,1(+
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LQGLFDWHV/HDG)UHH
,17(51$7,21$/
5(&7,),(5
/2*2
3$57180%(5
+
$66(0%/<
/27&2'(
'$7(&2'(
<($5 :((.
/,1(+
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
www.irf.com © 2012 International Rectifier
January 8, 2013
IRGP4640DPbF/IRGP4640D-EPbF
Qualification Information†
Industrial
Qualification Level
(per International Rectifier’s internal guidelines)
Moisture Sensitivity Level
TO-247AC
N/A
TO-247AD
N/A
††
ESD
Class H1C (+/- 2000V)
Human Body Model
(per JEDEC JESD22-A114)
Charged Device Model
RoHS Compliant
Class C5 (+/- 1000V)††
(per JEDEC JESD22-C101)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Highest passing voltage.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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January 8, 2013

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