IRF IRGPH50F Insulated gate bipolar transistor(vces=1200v, @vge=15v, ic=25a) Datasheet

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PD - 9.761A
IRGPH50F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for medium operating frequency (1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
VCES = 1200V
VCE(sat) ≤ 2.9V
G
@VGE = 15V, I C = 25A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
1200
45
25
90
90
±20
20
200
78
-55 to +150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
C-279
To Order
Min.
Typ.
Max.
—
—
—
—
—
0.24
—
6 (0.21)
0.64
—
40
—
Units
°C/W
g (oz)
Revision 0
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IRGPH50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
1200 —
—
V
VGE = 0V, I C = 250µA
20
—
—
V
VGE = 0V, IC = 1.0A
—
1.3
—
V/°C VGE = 0V, I C = 1.0mA
—
2.1
2.9
IC = 25A
V GE = 15V
—
2.5
—
V
IC = 45A
See Fig. 2, 5
—
2.4
—
IC = 25A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-14
— mV/°C VCE = VGE, IC = 250µA
7.5
17
—
S
VCE = 100V, I C = 25A
—
—
250
µA
VGE = 0V, V CE = 1200V
—
— 1200
VGE = 0V, V CE = 1200V, T J = 150°C
—
— ±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
82
16
30
34
13
320
240
1.4
4.5
5.9
33
15
590
500
13
13
2400
140
28
Max. Units
Conditions
100
IC = 25A
21
nC
VCC = 400V
See Fig. 8
43
VGE = 15V
—
TJ = 25°C
—
ns
IC = 25A, V CC = 960V
480
VGE = 15V, R G = 5.0Ω
330
Energy losses include "tail"
—
—
mJ
See Fig. 9, 10, 11, 14
8.2
—
TJ = 150°C,
—
ns
IC = 25A, V CC = 960V
—
VGE = 15V, R G = 5.0Ω
—
Energy losses include "tail"
—
mJ
See Fig. 10, 14
—
nH
Measured 5mm from package
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 7
—
ƒ = 1.0MHz
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 5.0Ω, ( See fig. 13a )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
C-280
To Order
Pulse width 5.0µs,
single shot.
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IRGPH50F
60
F or bo th :
50
L O A D C U R R E N T (A )
T ria n g u la r w a v e :
D u ty c yc le : 5 0 %
TJ = 1 2 5 ° C
T s ink = 9 0 ° C
G a te d riv e a s s p e c ifie d
P o w e r D is s ip a tio n = 4 0 W
40
C la m p v o lta g e :
8 0 % o f ra te d
S q u a re w a v e :
30
6 0 % o f ra te d
v o lta g e
20
10
Id e a l d iod e s
0
0.1
1
10
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
1000
IC , C ollector-to-E mitter C urrent (A )
I C , C ollector-to-E mitter C urrent (A )
10 00
TJ = 25 °C
1 00
TJ = 15 0°C
10
V G E = 1 5V
2 0µ s P U LS E W IDTH
1
1
100
TJ = 1 50 °C
10
TJ = 2 5 °C
1
V C C = 1 00 V
5 µ s P UL S E W IDTH
0.1
10
5
VC E , C o llector-to-Em itter V oltage (V)
10
15
V G E , G ate -to-E m itter V olta ge (V )
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-281
To Order
20
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IRGPH50F
4.0
V G E = 15 V
V CE , C o lle cto r-to -E m itte r V o lta g e (V )
M aximum D C Collector C urrent (A)
50
40
30
20
10
V G E = 15 V
8 0µ s P U LS E W IDTH
I C = 5 0A
3.0
I C = 2 5A
2.0
IC = 13A
1.0
0
25
50
75
100
125
-60
150
T C , C ase Tem perature (°C )
-40
-20
0
20
40
60
80
100 120 140 160
T C , C a s e Te m p e ra ture (°C )
Fig. 5 - Collector-to-Emitter Voltage vs.
Case Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
T herma l R espo nse (Z thJ C )
1
D = 0.5 0
0.2 0
0.1
0.1 0
PD M
0 .0 5
t
0.02
t2
N o te s :
1 . D u ty fa c to r D = t
0.01
0.01
0.00001
1
SIN G LE P U LSE
(TH ER MA L R E SP O N SE )
1
/t
2
2 . P e a k T J = P D M x Z thJ C + T C
0.0 001
0.001
0.01
0.1
1
t 1 , R ectangular Pulse D ura tion (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-282
To Order
10
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IRGPH50F
5 0 00
V G E , G ate-to-Em itter V oltage (V )
4 0 00
C , C ap ac ita nc e (pF )
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
V C E = 40 0 V
I C = 2 5A
16
Cies
12
3 0 00
Coes
2 0 00
Cres
1 0 00
0
8
4
0
1
10
10 0
0
20
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Total S w itching Losses (m J)
7 .0
= 9 60 V
= 15 V
= 25 °C
= 2 5A
To ta l S w itc hing Lo sse s (m J)
VC C
VG E
TC
IC
60
80
1 00
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
100
7 .2
40
Q g , Total G ate C harge (nC )
6 .8
6 .6
6 .4
6 .2
RG = 5 Ω
V G E = 15 V
V C C = 9 60 V
I C = 50 A
I C = 2 5A
10
I C = 1 3A
6 .0
1
5 .8
0
10
20
30
40
50
-60
60
-40
-20
0
20
40
60
80
100 120 140 160
TC , C ase Tem perature (°C )
R G , G ate R es istance (Ω )
W
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Case Temperature
C-283
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IRGPH50F
RG
TC
VCC
VGE
1000
=5 Ω
= 1 50°C
= 96 0V
= 1 5V
I C , C o llec to r-to-E m itter C urrent (A )
T o ta l S w itc hin g L o s s e s (m J )
40
30
20
10
0
VGGE E= 20 V
T J = 12 5°C
100
S A FE O P E RA TING A RE A
10
1
10
20
30
40
50
60
1
I C , C o lle c to r-to -E m itte r C u rre n t (A )
10
100
1000
V C E , C o lle cto r-to-E m itte r V olta g e (V )
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following:
Appendix G: Section D - page D-9
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 3 - JEDEC Outline TO-247AC (TO-3P)
C-284
To Order
Section D - page D-13
10000
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