IRF IRHG567110 Simple drive requirement Datasheet

PD-94246C
IRHG567110
RADIATION HARDENED 100V, Combination 2N-2P-CHANNEL
RAD-Hard HEXFET
POWER MOSFET
5 TECHNOLOGY
THRU-HOLE (MO-036AB)
®
™
Product Summary
Part Number
IRHG567110
IRHG563110
IRHG567110
IRHG563110
Radiation Level RDS(on)
100K Rads (Si)
0.29Ω
300K Rads (Si)
0.29Ω
100K Rads (Si)
0.96Ω
300K Rads (Si)
0.96Ω
ID
CHANNEL
1.6A
N
1.6A
N
-0.96A
P
-0.96A
P
International Rectifier’s RAD-HardTM HEXFET® MOSFET
Technology provides high performance power MOSFETs
for space applications. This technology has over a decade
of proven performance and reliability in satellite
applications. These devices have been characterized for
both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain all
of the well established advantages of MOSFETs such as
voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
MO-036AB
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 1A per MIL-STD-750,
Method 1020
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS =± 12V, TC = 25°C
ID @ VGS =± 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
N-Channel
P-Channel
1.6
1.0
6.4
1.4
0.011
± 20
130 ‚
1.6
0.14
6.5 ƒ
-0.96
-0.6
-3.84
1.4
Units
A
W
W/°C
V
mJ
A
mJ
0.011
± 20
200 ‡
-0.96
0.14
7.1 ˆ
V/ns
-55 to 150
°C
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
07/07/15
IRHG567110
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
100
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
—
—
VGS = 0V, ID = 1.0mA
—
0.14
—
—
—
0.29
2.0
1.0
—
—
—
—
—
—
4.0
—
10
25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
17
4.4
3.9
21
16
30
15
—
V
V/°C
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 1.0A „
Ω
V
S
nC
VDS = VGS, ID = 1.0mA
VDS =15V, IDS = 1.0A „
VDS= 80V, VGS= 0V
VDS = 80V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.6A,
VDS = 50V
ns
VDD = 50V, ID = 1.6A,
VGS =12V, RG = 7.5Ω
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
370
110
3.4
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.6
6.4
1.2
110
380
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.6A, VGS = 0V„
Tj = 25°C, IF = 1.6A, di/dt ≤ 100A/µs
VDD ≤ 25V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Pre-Irradiation
IRHG567110
Electrical Characteristics For Each P-Channel Device @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
—
-0.14
—
V/°C
—
—
0.96
-2.0
1.1
—
—
—
—
—
—
-4.0
—
-10
-25
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
-100
100
13.4
3.7
3.0
21
17
40
90
—
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -0.6A „
Ω
V
S
nC
VDS = VGS, ID = -1.0mA
VDS = -15V, IDS = -0.6A „
VDS = -80V, VGS = 0V
VDS = -80V,
VGS = 0V, TJ =125°C
VGS = - 20V
VGS = 20V
VGS = -12V, ID = -0.96A,
VDS = -50V
ns
VDD = -50V, ID = -0.96A,
VGS = -12V, RG = 7.5Ω
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
390
100
7.0
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-0.96
-3.84
-5.0
86
240
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -0.96A, VGS = 0V „
Tj = 25°C, IF = -0.96A, di/dt ≤ -100A/µs
VDD ≤ -25V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
90
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
Radiation Characteristics
Pre-Irradiation
IRHG567110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
„
On-State Resistance (TO-39)
Static Drain-to-Source „
On-State Resistance (MO-036AB)
Diode Forward Voltage „
300K Rads (Si)2
Min
Max
Units
†
Test Conditions
100
2.0
—
—
—
—
—
4.0
100
-100
10
0.226
100
2.0
—
—
—
—
—
4.0
100
-100
10
0.246
nA
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 80V, VGS = 0V
VGS = 12V, ID = 1.0A
—
0.29
—
0.31
Ω
VGS = 12V, ID = 1.0A
—
1.2
—
1.2
V
VGS = 0V, IS =1.6A
V
1. Part number IRHG567110
2. Part number IRHG563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
@VGS =
0V
-5V
-10V
-15V
-20V
300 ± 7.5%
38 ± 7.5%
100
100
100
100
100
61 ± 5%
330 ± 7.5%
31 ± 10%
100
100
100
35
25
84 ± 5%
350 ± 10%
28 ± 7.5%
100
100
80
25
-
Bias VDS (V)
38 ± 5%
120
100
80
60
40
20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
-5
-10
-15
-20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
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Radiation Characteristics
Pre-Irradiation
IRHG567110
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @ Tj = 25°C, Post Total Dose Irradiation
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage -100
Gate Threshold Voltage
-2.0
Gate-to-Source Leakage Forward
—
Gate-to-Source Leakage Reverse
—
Zero Gate Voltage Drain Current
—
Static Drain-to-Source „
—
On-State Resistance (TO-39)
Static Drain-to-Source „
—
On-State Resistance (MO-036AB)
Diode Forward Voltage „
—
300K Rads (Si)2
Min
Max
—
-4.0
-100
100
-10
0.916
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.936
0.96
—
-3.5
—
†
Test Conditions
Units
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
V GS = 20 V
VDS=-80V, VGS =0V
VGS = -12V, ID =-0.6A
0.98
Ω
VGS = -12V, ID =-0.6A
-3.5
V
VGS = 0V, IS = -0.96A
V
nA
1. Part number IRHG567110
2. Part number IRHG563110
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS =
@VGS =
@VGS =
@VGS =
0V
5V
10V
15V
@VGS =
20V
270 ± 7.5%
35 ± 7.5%
-100
-100
-100
-100
-100
61 ± 5%
330 ± 7.5%
30 ± 7.5%
-100
-100
-100
-100
-25
84 ± 5%
350 ± 7.5%
28 ± 7.5%
-100
-100
-100
-30
-
Bias VDS (V)
38 ± 5%
-120
-100
-80
-60
-40
-20
0
LET=38 ± 5%
LET=61 ± 5%
LET=84 ± 5%
0
5
10
15
20
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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5
IRHG567110
Pre-Irradiation
N-Channel
Q1,Q3
10
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
1
5.0V
0.1
0.1
20µs PULSE WIDTH
TJ = 25 °C
1
10
100
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
10
100
Fig 2. Typical Output Characteristics
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 50V
20µs PULSE WIDTH
6.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
6
1
VDS , Drain-to-Source Voltage (V)
10
6.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
Fig 1. Typical Output Characteristics
5.5
5.0V
1
VDS , Drain-to-Source Voltage (V)
0.1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 1.6A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHG567110
N-Channel
Q1,Q3
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
600
Ciss
400
Coss
200
Crss
0
1
10
20
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
VDS = 80V
VDS = 50V
VDS = 20V
16
12
8
4
0
100
ID = 1.6A
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
VDS , Drain-to-Source Voltage (V)
10
1
TJ = 25 ° C
V GS = 0 V
0.8
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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16
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 150 ° C
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10
0.6
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.1
0.4
8
QG , Total Gate Charge (nC)
1.4
1
0.1
1ms
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
7
IRHG567110
Pre-Irradiation
N-Channel
Q1,Q3
RD
V DS
1.6
VGS
ID , Drain Current (A)
D.U.T.
RG
1.3
+
-V DD
VGS
1.0
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.6
Fig 10a. Switching Time Test Circuit
VDS
0.3
0.0
90%
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
0.10
10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJA + TA
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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Pre-Irradiation
IRHG567110
15V
D.U.T.
RG
VGS
20V
DRIVER
L
VDS
IAS
tp
+
V
- DD
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
EAS , Single Pulse Avalanche Energy (mJ)
N-Channel
Q1,Q3
300
ID
0.7A
1.0A
BOTTOM 1.6A
TOP
250
200
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.2µF
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
9
IRHG567110
Pre-Irradiation
P-Channel
Q2,Q4
10
10
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
-5.0V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 150 ° C
V DS = -50V
20µs PULSE WIDTH
5.8
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
10
10
100
Fig 2. Typical Output Characteristics
2.5
5.6
1
-VDS , Drain-to-Source Voltage (V)
10
5.4
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
Fig 1. Typical Output Characteristics
5.2
-5.0V
1
-VDS , Drain-to-Source Voltage (V)
1
5.0
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -0.96A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHG567110
P-Channel
Q2,Q4
600
-VGS , Gate-to-Source Voltage (V)
500
C, Capacitance (pF)
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
400
300
200
Coss
100
Crss
0
1
VDS =-80V
VDS =-50V
VDS =-20V
16
12
8
4
0
10
ID = -0.96A
100
FOR TEST CIRCUIT
SEE FIGURE 13
0
2
-VDS , Drain-to-Source Voltage (V)
6
8
10
12
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
10
10
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
4
QG , Total Gate Charge (nC)
TJ = 150 ° C
1
TJ = 25 ° C
0.1
1.0
V GS = 0 V
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5.0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
1ms
1
0.1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
11
IRHG567110
Pre-Irradiation
P-Channel
Q2,Q4
1.0
RD
V DS
VGS
-ID , Drain Current (A)
0.8
D.U.T.
RG
+
0.6
V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.4
Fig 10a. Switching Time Test Circuit
0.2
td(on)
tr
t d(off)
tf
VGS
0.0
10%
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
PDM
0.01
1
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
12
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Pre-Irradiation
IRHG567110
P-Channel
Q2,Q4
D.U.T.
RG
-20V
VGS
IAS
tp
VDD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
500
ID
-0.4A
-0.6A
BOTTOM -0.96A
TOP
400
300
200
100
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12V
QGS
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
50KΩ
-12V
12V
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
13
IRHG567110
Pre-Irradiation
Footnotes:
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
‚ VDD = 25V, starting TJ = 25°C, L= 100mH,
Peak IL = 1.6A, VGS = 12V
ƒ ISD ≤ 1.6A, di/dt ≤ 340A/µs,
VDD ≤ 100V, TJ ≤ 150°C
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
† Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
‡ VDD = - 25V, starting TJ = 25°C, L= 430mH,
Peak IL = - 0.96A, VGS = -12V
ˆ ISD ≤ - 0.96A, di/dt ≤ - 290A/µs,
VDD ≤ -100V, TJ ≤ 150°C
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q4
Q3
Q1
Q2
Q2
CHANNELS
N Ch.- Q1, Q3
P Ch.- Q2, Q4
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2015
14
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