PD - 90707D IRHM7130 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-254AA) ® RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHM7130 100K Rads (Si) IRHM3130 300K Rads (Si) IRHM4130 600K Rads (Si) IRHM8130 1000K Rads (Si) R DS(on) 0.18Ω 0.18Ω 0.18Ω 0.18Ω ID 14A 14A 14A 14A TO-254AA International Rectifiers RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: ! ! ! ! ! ! ! ! ! Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units 14 9.0 56 75 0.60 ±20 160 14 7.5 5.5 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( 0.063 in.(1.6mm) from case for 10s) 9.3(Typical ) C g For footnotes refer to the last page www.irf.com 1 7/5/01 IRHM7130 Pre-Irradiation @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Qgd td(on) tr td(off) tf LS + LD Typ Max Units 100 V 0.12 V/°C 2.0 3.3 0.18 0.20 4.0 25 250 Ω 6.8 100 -100 45 11 17 30 120 49 64 Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA nC VGS = 12V, ID =9.0A ➃ VGS = 12V, ID = 14A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 9.0A ➃ VDS= 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =14A VDS = 50V ns VDD = 50V, ID =14A VGS =12V, RG = 7.5Ω V S( ) Ω Electrical Characteristics µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance 1100 310 55 VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time 14 56 1.8 370 3.5 Test Conditions A V nS µC Tj = 25°C, IS = 14A, VGS = 0V ➃ Tj = 25°C, IF = 14A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max Units 1.67 48 0.21 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7130 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS V/5JD IGSS IGSS IDSS RDS(on) RDS(on) VSD 300 - 1000K Rads (Si) 100 2.0 4.0 100 -100 25 0.18 100 1.25 4.5 100 -100 25 0.24 nA µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =9.0A 0.18 0.24 Ω VGS = 12V, ID =9.0A 1.8 1.8 V VGS = 0V, IS = 14A Min Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source" ➃ On-State Resistance (TO-3) Static Drain-to-Source" ➃ On-State Resistance (TO-254AA) Diode Forward Voltage" ➃ Test Conditions U nits Units Max 100K Rads(Si) Max Min V 1. Part numbers IRHM7130 2. Part number IRHM8130, IRHM3130 and IRHM4130 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm )) 28 36.8 Energy (MeV) 285 305 VDS(V) Range (µm) 43 39 @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V 100 100 100 80 60 100 90 70 50 120 100 VDS 80 Cu 60 Br 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM7130 Post-Irradiation Pre-Irradiation Fig 1. Typical Response of Gate Threshhold Fig 2. Typical Response of On-State Resistance Vs. Total Dose Exposure Voltage Vs. Total Dose Exposure Fig 3. Typical Response of Transconductance Vs. Total Dose Exposure 4 Fig 4. Typical Response of Drain to Source Breakdown Vs. Total Dose Exposure www.irf.com Post-Irradiation Pre-Irradiation Fig 5. Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure IRHM7130 Fig 6. Typical On-State Resistance Vs. Neutron Fluence Level Fig 8a. Gate Stress of VGSS Equals 12 Volts During Radiation Fig 7. Typical Transient Response of Rad Hard HEXFET During 1x1012 Rad (Si)/Sec Exposure www.irf.com Fig 8b. VDSS Stress Equals 80% of BVDSS During Radiation 5 RadiationPost-Irradiation Characteristics Pre-Irradiation IRHM7130 Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc Fig 9. Typical Output Characteristics Pre-Irradiation Fig 10. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 11. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 12. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) 6 www.irf.com Radiation Characteristics Pre-Irradiation IRHM7130 Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 80 Vdc Fig 13. Typical Output Characteristics Pre-Irradiation Fig 14. Typical Output Characteristics Post-Irradiation 100K Rads (Si) Fig 15. Typical Output Characteristics Post-Irradiation 300K Rads (Si) Fig 16. Typical Output Characteristics Post-Irradiation 1 Mega Rads (Si) www.irf.com 7 IRHM7130 Fig 17. Typical Output Characteristics Fig 19. Typical Transfer Characteristics 8 Pre-Irradiation Fig 18. Typical Output Characteristics Fig 20. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation IRHM7130 29 Fig 21. Typical Capacitance Vs. Drain-to-Source Voltage Fig 22. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 23. Typical Source-Drain Diode Forward Voltage Fig 24. Maximum Safe Operating Area www.irf.com 9 IRHM7130 Pre-Irradiation VDS VGS RD D.U.T. RG + -VDD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 26a. Switching Time Test Circuit VDS 90% 10% VGS Fig 25. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 26b. Switching Time Waveforms Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case 10 www.irf.com Pre-Irradiation IRHM7130 15V L VDS D.U.T RG V/5 20V IAS DRIVER + - VDD A 0.01Ω tp Fig 28a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 28c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 28b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 29a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 29b. Gate Charge Test Circuit 11 IRHM7130 Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L=1.63mH Peak IL = 14A, VGS =12V ➂ ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ 100V, TJ ≤ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions TO-254AA .12 ( .005 ) 13.84 ( .545 ) 13.59 ( .535 ) 3.78 ( .149 ) 3.53 ( .139 ) -A- 20.32 ( .800 ) 20.07 ( .790 ) 17.40 ( .685 ) 16.89 ( .665 ) 31.40 ( 1.235 ) 30.39 ( 1.199 ) 3.81 ( .150 ) 2X 6.60 ( .260 ) 6.32 ( .249 ) 1 2 13.84 ( .545 ) 13.59 ( .535 ) 3 -C- 3X 1.14 ( .045 ) 0.89 ( .035 ) .50 ( .020 ) .25 ( .010 ) -B1.27 ( .050 ) 1.02 ( .040 ) LEGEND 1 - COLL 2 - EMIT 3 - GATE 3.81 ( .150 ) M C A M B M C LEGEND 1- DRAIN 2- SOURCE 3- GATE IRHM57163SED IRHM57163SEU CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.. Data and specifications subject to change without notice. 07/01 12 www.irf.com