IRF IRHM4150 Radiation hardened power mosfet thru-hole Datasheet

PD - 90675C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
IRHM7150
JANSR2N7268
100V, N-CHANNEL
REF: MIL-PRF-19500/603
®
RAD Hard ™ HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7150
100K Rads (Si)
IRHM3150
300K Rads (Si)
RDS(on)
0.065Ω
0.065Ω
ID
34A
34A
QPL Part Number
JANSR2N7268
JANSF2N7268
IRHM4150
600K Rads (Si)
0.065Ω
34A
JANSG2N7268
IRHM8150
1000K Rads (Si)
0.065Ω
34A
JANSH2N7268
HEXFET® technol-
International Rectifier’s RADHard
ogy provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
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Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
C
g
For footnotes refer to the last page
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1
8/14/01
IRHM7150
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Test Conditions
100
—
—
V
VGS =0 V, ID = 1.0mA
—
0.13
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.065
Ω
0.076
4.0
V
—
S( )
25
µA
250
VGS = 12V, ID = 21A
"
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A "
VDS= 80V,VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 34A
VDS = 50V
Ω
Electrical Characteristics
IGSS
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
160
35
65
45
190
170
130
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4300
1200
200
—
—
—
nA
nC
VDD = 50V, ID = 14A,
VGS = 12V, RG = 2.35Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
34
136
1.4
570
5.8
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 34A, VGS = 0V ➃
Tj = 25°C, IF = 34A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.83
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation
Characteristics
Pre-Irradiation
IRHM7150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)
Min
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage# ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source# ➃
On-State Resistance (TO-3)
Static Drain-to-Source# ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage# ➃
Units
300 to 1000K Rads (Si)
Max
Min
Max
Test Conditions
100
2.0
—
—
—
—
—
4.0
100
-100
25
0.065
100
1.25
—
—
—
—
—
4.5
100
-100
50
0.09
V
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =21A
—
0.065
—
0.09
Ω
VGS = 12V, ID =21A
—
1.4
1.4
V
VGS = 0V, IS = 34A
—
nA
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
28
285
43
100
100
100
80
60
—
36.8
305
39
100
90
70
50
—
—
120
100
VDS
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7150
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Post-Irradiation
Pre-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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Post-Irradiation
Pre-Irradiation
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
IRHM7150
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response of
Rad Hard HEXFET During 1x1012
Rad (Si)/Sec Exposure
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Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
5
RadiationPost-Irradiation
Characteristics
Pre-Irradiation
IRHM7150
Note: Bias Conditions during radiation: V/5 = 12 Vdc, V,5 = 0 Vdc
Fig 9. Typical Output Characteristics
Pre-Irradiation
Fig 11. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 10. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 12. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics
Pre-Irradiation
IRHM7150
Note: Bias Conditions during radiation: V/5 = 0 Vdc, V,5 = 80 Vdc
Fig 13. Typical Output Characteristics
Pre-Irradiation
Fig 14. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 15. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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IRHM7150
Fig 17. Typical Output Characteristics
Fig 19. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 18. Typical Output Characteristics
Fig 20. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHM7150
29
Fig 21. Typical CapacitanceVs.
Drain-to-Source Voltage
Fig 22. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 23. Typical Source-Drain
Diode Forward Voltage
Fig 24. Maximum Safe Operating
Area
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IRHM7150
Pre-Irradiation
VDS
VGS
RD
D.U.T.
RG
+
-VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
VDS
90%
Fig 25. Maximum Drain Current
Vs.
Case Temperature
10%
VGS
td(on)
tr
t d(off)
tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
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Pre-Irradiation
IRHM7150
15V
L
VDS
DRIVER
D.U.T
RG
+
- VDD
IAS
20V
V
GS
A
0.01Ω
tp
Fig 28a. Unclamped Inductive Test
Circuit
V(BR)DSS
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 28b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 29a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
IRHM7150
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 0.86mH
Peak IL = 26A, VGS = 12V
➂ ISD ≤ 26A, di/dt ≤ 190A/µs,
VDD ≤ 100V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V DS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
3.78 ( .149 )
3.53 ( .139 )
-A-
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
3.81 ( .150 )
2X
6.60 ( .260 )
6.32 ( .249 )
1
2
13.84 ( .545 )
13.59 ( .535 )
3
-C-
3X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
-B1.27 ( .050 )
1.02 ( .040 )
LEGEND
1 - COLL
2 - EMIT
3 - GATE
3.81 ( .150 )
M C A M B
M C
LEGEND
1- DRAIN
2- SOURCE
3- GATE
IRHM57163SED
IRHM57163SEU
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 08/01
12
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