IRF IRHM4160 Repetitive avalanche and dv/dt rated hexfet transistor Datasheet

PD - 91331C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-254AA)
IRHM7160
JANSR2N7432
100V, N-CHANNEL
REF: MIL-PRF-19500/663
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level R DS(on)
IRHM7160
100K Rads (Si) 0.045Ω
IRHM3160
300K Rads (Si) 0.045Ω
IRHM4160
600K Rads (Si) 0.045Ω
IRHM8160
1000K Rads (Si) 0.045Ω
ID QPL Part Number
35*A JANSR2N7432
35*A JANSF2N7432
35*A JANSG2N7432
35*A JANSH2N7432
TO-254AA
HEXFET® technol-
International Rectifier’s RADHard
ogy provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
35*
35*
201
250
2.0
±20
500
35
25
7.3
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in.(1.6mm) from case for 10s)
9.3 (Typical )
C
g
*Current limited by pin diameter
For footnotes refer to the last page
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1
8/14/01
IRHM7160
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Typ Max Units
100
—
—
V
—
0.107
—
V/°C
—
—
0.045
Ω
2.0
16
—
—
—
—
—
—
4.0
—
25
250
V
S( )
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
310
53
110
35
150
150
130
—
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID =35A ➃
nC
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A ➃
VDS= 80V ,VGS=0V
VDS = 80V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID =35A
VDS = 50V
ns
VDD = 50V, ID =35A
VGS =12V, RG = 2.35Ω
Ω
Electrical Characteristics
µA
nA
nH Measured from Drain lead (6mm /0.25in.
from package) to Source lead (6mm /0.25in.
from package) with Source wires
internally
Ciss
Coss
Crss
bonded from Source Pin to Drain Pad
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
5300
1600
350
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
35*
140
1.8
520
6.1
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 35A, VGS = 0V ➃
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current limited by pin diameter
Thermal Resistance
Parameter
R thJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.50
—
48
0.21 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHM7160
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100 K Rads(Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➃
On-State Resistance (TO-3)
Static Drain-to-Source" ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage" ➃
Min
Max
100
2.0
—
—
—
—
300 - 1000K Rads (Si)
Test Conditions
U
nits
Units
Min
Max
—
4.0
100
-100
25
0.045
100
1.25
—
—
—
—
—
4.5
100
-100
25
0.062
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=80V, VGS =0V
VGS = 12V, ID =35A
—
0.045
—
0.062
Ω
VGS = 12V, ID =35A
—
1.8
1.8
V
VGS = 0V, IS = 35A
—
V
nA
1. Part numbers IRHM7160 (JANSR2N7432)
2. Part number IRHM3160, IRHM4160 and IRH8160 (JANSF2N7432, JANSG2N7432 and JANSH2N7432)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
Energy
MeV/(mg/cm ))
(MeV)
28
285
36.8
305
VDS(V)
Range
43
39
µm) @VGS=0V @VGS=-5V@VGS=-10V@VGS=-15V@VGS=-20V
100
100
100
80
60
100
90
70
50
—
120
100
VDS
80
Cu
60
Br
40
20
0
0
-5
-10
-15
-20
-25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7160
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
100
100
10
1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
10
10
100
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 50V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
12
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
5
10
100
Fig 2. Typical Output Characteristics
1000
1
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
20µs PULSE WIDTH
TJ = 150 °C
5.0V
VDS , Drain-to-Source Voltage (V)
I D , Drain-to-Source Current (A)
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
ID = 50A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
8000
6000
Ciss
4000
Coss
2000
Crss
0
1
10
20
VGS , Gate-to-Source Voltage (V)
10000
IRHM7160
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
VDS , Drain-to-Source Voltage (V)
40
80
120
160
200
240
280
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
VDS = 80V
VDS = 50V
VDS = 20V
16
0
100
ID = 35A
100
100
TJ = 150 ° C
10
100us
1ms
10
10ms
TJ = 25 ° C
1
0.4
V GS = 0 V
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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2.4
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHM7160
Pre-Irradiation
60
50
ID , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
-VDD
40
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
10
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.01
0.001
0.00001
0.20
0.10
0.05
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHM7160
EAS , Single Pulse Avalanche Energy (mJ)
1400
ID
9.8A
14A
BOTTOM 22A
TOP
1200
15V
1000
L
VDS
D.U.T
RG
V/5
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHM7160
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=0.82mH
Peak IL = 35A, VGS =12V
➂ ISD ≤ 35A, di/dt ≤ 100A/µs,
VDD ≤ 100V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
.12 ( .005 )
13.84 ( .545 )
13.59 ( .535 )
3.78 ( .149 )
3.53 ( .139 )
-A-
20.32 ( .800 )
20.07 ( .790 )
17.40 ( .685 )
16.89 ( .665 )
31.40 ( 1.235 )
30.39 ( 1.199 )
3.81 ( .150 )
2X
6.60 ( .260 )
6.32 ( .249 )
1
2
13.84 ( .545 )
13.59 ( .535 )
3
-C-
3X
1.14 ( .045 )
0.89 ( .035 )
.50 ( .020 )
.25 ( .010 )
-B1.27 ( .050 )
1.02 ( .040 )
LEGEND
1 - COLL
2 - EMIT
3 - GATE
3.81 ( .150 )
M C A M B
M C
LEGEND
1- DRAIN
2- SOURCE
3- GATE
IRHM57163SED
IRHM57163SEU
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 08/01
8
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