IRF IRHM7250 Radiation hardened power mosfet thru-hole Datasheet

PD - 90674C
IRHM7250
JANSR2N7269
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
REF: MIL-PRF-19500/603
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHM7250
100K Rads (Si)
IRHM3250
300K Rads (Si)
RDS(on)
0.10Ω
0.10Ω
ID
26A
26A
QPL Part Number
JANSR2N7269
JANSF2N7269
IRHM4250
600K Rads (Si)
0.10Ω
26A
JANSG2N7269
IRHM8250
1000K Rads (Si) 0.10Ω
26A
JANSH2N7269
HEXFET®
International Rectifier’s RADHard
technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-254AA
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
C
g
For footnotes refer to the last page
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1
10/11/00
IRHM7250, JANSR2N7269
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Typ Max Units
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
200
—
—
V
—
0.27
—
V/°C
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.10
0.11
4.0
—
25
250
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
170
30
60
33
140
140
140
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4700
850
210
—
—
—
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 16A
„
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 16A „
VDS= 160V,VGS=0V
VDS = 160V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 26A
VDS = 100V
Ω
V
S( )
Ω
µA
nA
nC
VDD = 100V, ID = 26A,
RG = 2.35Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
26
104
1.4
820
12
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 26A, VGS = 0V ➃
Tj = 25°C, IF = 26A, di/dt ≥ 100A/µs
VDD ≤ 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
— 0.83
0.21 —
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHM7250, JANSR2N7269
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-254AA)
Diode Forward Voltage ➃
600 to 1000K Rads (Si)2
Units
Test Conditions
Min
Max
Min
Max
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.094
200
1.25
—
—
—
—
—
4.5
100
-100
50
0.149
nA
µA
Ω
VGS = 0V, ID = 1.0mA
V GS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=160V, VGS =0V
VGS = 12V, ID =16A
—
0.10
—
0.155
Ω
VGS = 12V, ID =16A
—
1.4
—
1.4
V
V
VGS = 0V, IS = 26A
1. Part number IRHM7250 (JANSR2N7269)
2. Part numbers IRHM3250 (JANSF2N7269), IRHM4250 (JANSG2N7269) and IRHM8250 (JANSH2N7269)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
MeV/(mg/cm2))
28
36.8
Energy
(MeV)
285
305
Range
VDS(V)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
190
180
170
125
—
39
100
100
100
50
—
200
VDS
150
Cu
Br
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHM7250, JANSR2N7269
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
4
Post-Irradiation
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
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Post-Irradiation
IRHM7250, JANSR2N7269
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of VGSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response
of Rad Hard HEXFET During
1x1012 Rad (Si)/Sec Exposure
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Fig 8b. VDSS Stress Equals
80% of BVDSS During Radiation
Fig 9. High Dose Rate
(Gamma Dot) Test Circuit
5
Radiation Characteristics
IRHM7250, JANSR2N7269
Note: Bias Conditions during radiation: VGS = 12 Vdc, VDS = 0 Vdc
Fig 10. Typical Output Characteristics
Pre-Irradiation
Fig 12. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
6
Fig 11. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 13. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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Radiation Characteristics
IRHM7250, JANSR2N7269
Note: Bias Conditions during radiation: VGS = 0 Vdc, VDS = 160 Vdc
Fig 14. Typical Output Characteristics
Pre-Irradiation
Fig 15. Typical Output Characteristics
Post-Irradiation 100K Rads (Si)
Fig 16. Typical Output Characteristics
Post-Irradiation 300K Rads (Si)
Fig 17. Typical Output Characteristics
Post-Irradiation 1 Mega Rads(Si)
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IRHM7250, JANSR2N7269
Fig 18. Typical Output Characteristics
Fig 20. Typical Transfer Characteristics
8
Pre-Irradiation
Fig 19. Typical Output Characteristics
Fig 21. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
IRHM7250, JANSR2N7269
Fig 22. Typical CapacitanceVs.
Drain-to-Source Voltage
Fig 23. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 24. Typical Source-Drain Diode
Forward Voltage
Fig 25. Maximum Safe Operating
Area
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IRHM7250, JANSR2N7269
Pre-Irradiation
VDS
VGS
RD
D.U.T.
RG
+
-VDD
12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 26a. Switching Time Test Circuit
VDS
90%
10%
VGS
Fig 26. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 26b. Switching Time Waveforms
Fig 27. Maximum Effective Transient Thermal Impedance, Junction-to-Case
10
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Pre-Irradiation
IRHM7250, JANSR2N7269
1 5V
L
VD S
D .U .T
RG
IA S
12V
D R IV E R
+
- VD D
0 .0 1 Ω
tp
Fig 28a. Unclamped Inductive Test Circuit
V (B R )D S S
tp
Fig 28c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Current Regulator
Same Type as D.U.T.
Fig 28b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 29a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 29b. Gate Charge Test Circuit
11
IRHM7250, JANSR2N7269
Pre-Irradiation
Foot Notes:
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L= 1.5mH
Peak IL = 26A, VGS = 12V
➂ ISD ≤ 26A, di/dt ≤ 190A/µs,
VDD ≤ 200V, TJ ≤ 150°C
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-254AA
12 ( 005 )
13 84 ( 545 )
13 59 ( 535 )
3 78 ( 149 )
3 53 ( 139 )
A
20 32 ( 800 )
20 07 ( 790 )
17 40 ( 685 )
16 89 ( 665 )
31 40 ( 1 235 )
30 39 ( 1 199 )
6 60 ( 260 )
6 32 ( 249 )
1
2
B
1 27 ( 050 )
1 02 ( 040 )
13 84 ( 545 )
13 59 ( 535 )
3
C
3X
3 81 ( 150 )
2X
1 14 ( 045 )
0 89 ( 035 )
50 ( 020 )
25 ( 010 )
3 81 ( 150 )
M C A M B
M C
IRHM7250D
IRHM7250U
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
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