IRF IRHM7450SE Transistor n-channel(bvdss=500v, rds(on)=0.51ohm, id=12a) Datasheet

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Provisional Data Sheet No. PD-9.1223B
REPETITIVE AVALANCHE AND dv/dt RATED
IRHM7450SE
HEXFET® TRANSISTOR
N-CHANNEL
SINGLE EVENT EFFECT (SEE) RAD HARD
Ω , (SEE) RAD HARD HEXFET
500 Volt, 0.51Ω
International Rectifier’s (SEE) RAD HARD technology
HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in
gate drive circuitry is required. These devices are also
capable of surviving transient ionization pulses as high
as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET
technology, the user can expect the highest quality
and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits
in space and weapons environments.
Product Summary
Part Number
IRHM7450SE
BVDSS
500V
■
■
■
■
■
■
■
■
■
■
■
■
■
Radiation Hardened up to 1 x 10 5 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Pre-Radiation
Parameter
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
IRHM7450SE
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
ID
12A
Features:
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
I D @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
RDS(on)
0.51Ω
To Order
12
7
48
150
1.2
±20
500
12
15
3.5
-55 to 150
300 (0.063 in. (1.6mm) from
case for 10 sec.)
9.3 (typical)
Units
A
W
W/K ➄
V
mJ
A
mJ
V/ns
oC
g
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IRHM7450SE Device
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min.
500
—
—
0.6
—
—
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source
On-State Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
—
—
2.5
3
—
—
—
—
—
—
—
—
0.51
0.57
4.5
—
50
250
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
100
-100
140
50
60
35
50
100
60
—
LS
Internal Source Inductance
—
8.7
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4000
330
52
—
—
—
RDS(on)
Typ. Max. Units
V
V/°C
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
nC
VGS = 12V, ID = 7A
➃
VGS = 12V, ID = 12A
VDS = VGS, ID = 1.0 mA
VDS > 15V, IDS = 7A ➃
V DS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 12A
VDS = Max. Rating x 0.5
ns
VDD = 250V, ID =12A,
RG = 2.35Ω
Ω
V
S( )
Ω
BVDSS
∆BVDSS/∆TJ
µA
nA
nH
pF
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
—
—
—
—
12
48
A
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = 12A, VGS = 0V ➃
Tj = 25°C, IF = 12A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
—
—
—
—
—
—
1.6
500
16
V
ns
µC
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
0.83
RthJA
Junction-to-Ambient
—
—
48
RthCS
Case-to-Sink
—
0.21
—
To Order
Test Conditions
K/W➄
Typical socket mount
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IRHM7450SE Device
Radiation Characteristics
Radiation Performance of Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability.
The hardness assurance program at International
Rectifier uses two radiation environments.
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and a
VDSS bias condition equal to 80% of the device
rated voltage per note 7. Pre- and post-radiation
limits of the devices irradiated to 1 x 105 Rads (Si)
are identical and are presented in Table 1. The values in Table 1 will be met for either of the two low
dose rate test circuits that are used.
Table 1. Low Dose Rate ➅ ➆
VSD
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. Single
Event Effects characterization is shown in Table 3.
IRHM7450SE
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance One
Diode Forward Voltage ➃
Units
Test Conditions ➉
V
VGS = 0V, I D = 1.0 mA
VGS = VDS , ID = 1.0 mA
VGS = 20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0V
VGS = 12V, ID = 7A
min.
max.
500
2.0
—
—
—
—
—
4.5
100
-100
50
0.51
µA
Ω
—
1.6
V
nA
TC = 25°C, IS = 12A,VGS = 0V
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
—
— 400 —
—
400
V
Applied drain-to-source voltage
during gamma-dot
—
8
—
—
8
—
A
Peak radiation induced photo-current
—
15
—
—
3
— A/µsec Rate of rise of photo-current
—
27
—
— 133
—
µH
Circuit inductance required to limit di/dt
Drain-to-Source Voltage
IPP
di/dt
L1
Table 3. Single Event Effects ➈
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
500
V
Ni
28
1 x 105
~35
400
-5
To Order
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IRHM7450SE Device
Radiation Characteristics
➅ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
➁
➂
➃
➄
maximum junction temperature.
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BV DSS/(BV DSS-VDD)]
Peak IL = 12A, VGS = 12V, 25 ≤ RG ≤ 200Ω
ISD ≤ 12A, di/dt ≤ 130 A/µs,
VDD ≤ BV DSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
➆
➇
➈
➉
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Case Outline and Dimensions -TO254AA
3
Legend
1 - Drain
2 - Source
3 - Gate
2
1
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and (Inches)
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. All dimensions are shown in millimeters (inches).
Optional leadforms for outline TO-254
Legend
1 - Drain
2 - Source
3 - Gate
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. All dimensions are shown in millimeters (inches).
3. Leadform is available in either orientation.
Dimensions in Millimeters and (Inches)
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted,
machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxides packages shall not be placed in acids that will produce
fumes containing beryllium.
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
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http://www.irf.com/
Data and specifications subject to change without notice.
10/96
To Order
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