IRF IRHM9064 Transistor p-channel(bvdss=-60v, rds(on)=0.060ohm, id=-35*a) Datasheet

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Provisional Data Sheet No. PD-9.1438
IRHM9064
REPETITIVE AVALANCHE AND dv/dt RATED
®
HEXFET TRANSISTOR
P-CHANNEL
RAD HARD
Ω , RAD HARD HEXFET
-60 Volt, 0.060Ω
Product Summary
International Rectifier’s P-Channel RAD HARD technology
HEXFETs demonstrate excellent threshold voltage stability
and breakdown voltage stability at total radiation doses as
high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier’s P-Channel RAD
HARD HEXFETs retain identical electrical specifications up
to 1 x 105 Rads (Si) total dose. No compensation in gate drive
circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads
(Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International
Rectifier P-Channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-Channel RAD HARD process utilizes International Rectifier’s
patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
P-Channel RAD HARD HEXFET transistors also feature
all of the well-established advantages of MOSFETs, such
as voltage control, very fast switching, ease of paralleling
and temperature stability of the electrical parameters. They
are well-suited for applications such as switching power
supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons
environments.
Part Number
IRHM9064
BV DSS
-60V
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Pre-Radiation
Parameter
VGS
EAS
I AR
EAR
dv/dt
TJ
TSTG
ID
-35*A
Features:
Absolute Maximum Ratings
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
RDS(on)
0.060Ω
IRHM9064
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
To Order
-35*
-26
-168
250
2.0
± 20
500
-35*
25
-5.5
-55 to 150
300 (0.063 in. (1.6mm) from case for 10s
9.3 (typical)
Units
A
W
W/K
V
mJ
A
mJ
V/ns
o
C
g
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IRHM9064
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
—
—
V
—
-0.048
—
V/°C
—
—
-2.0
16
—
—
—
—
—
—
—
—
0.060
0.070
-4.0
—
-25
-250
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7
-100
100
260
60
86
62
227
200
115
—
—
8.7
—
—
—
—
7400
3200
540
—
—
—
∆BVDSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Typ Max Units
Ω
V
S( )
Ω
BVDSS
µA
nA
nC
ns
nH
pF
Test Conditions
VGS =0 V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -12V, ID = -26A „
VGS = -12V, ID = -35A
VDS = VGS, ID = -1.0mA
VDS > -15V, I DS = -26 A „
VDS= 0.8 x Max Rating,VGS=0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS =-20 V
VGS = 20V
VGS =-12V, ID = -35A
VDS = Max Rating x 0.5
VDD = -30V, ID = -35A,
RG = 2.35Ω
Measured from drain lead,
Modified MOSFET symbol show6mm (0.25 in) from package ing the internal inductances.
to center of die.
Measured from source lead,
6mm (0.25 in) from package
to source bonding pad.
VGS = 0V, VDS = -25 V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) 
—
—
—
—
-35
-168
A
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-3.0
480
3.7
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Modified MOSFET symbol
showing the integral reverse
p-n junction rectifier.
Tj = 25°C, IS = -35A, VGS = 0V „
Tj = 25°C, IF = -35A, di/dt ≤ -100A/µs
VDD ≤ -50V „
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Junction-to-Sink
Min Typ Max
—
—
—
— 0.50
—
48
0.21 —
To Order
Units
Test Conditions
K/W
Typical socket mount
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IRHM9064
Radiation Characteristics
Radiation Performance of P-Channel Rad
Hard HEXFETs
International Rectifier Radiation Hardened HEXFETs
are tested to verify their hardness capability. The hardness assurance program at International Rectifier
uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of -12 volts per note 6 and a
VDSS bias condition equal to 80% of the device rated
voltage per note 7. Pre- and post-radiation limits of
the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1. The values in Table
1 will be met for either of the two low dose rate test
Table 1. Low Dose Rate †
circuits that are used. Both pre- and post-radiation
performance are tested and specified using the same
drive circuitry and test conditions in order to provide
a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si) no changes in limits
are specified in DC parameters.
High dose rate testing may be done on a special
request basis using a dose rate up to 1 x 1012 Rads
(Si)/Sec.
International Rectifier radiation hardened P-Channel
HEXFETs are considered to be neutron-tolerant, as
stated in MIL-PRF-19500 Group D. International
Rectifier radiation hardened P-Channel HEXFETs
have been characterized in heavy ion Single Event
Effects (SEE) environments and the results are shown
in Table 3.
‡
IRHM9064
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
VSD
100K Rads (Si) Units
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage „
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance One
Diode Forward Voltage „
Table 2. High Dose Rate
Test Conditions Š
Min
Max
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-25
0.060
nA
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS , ID = -1.0mA
VGS = -20V
VGS = 20V
VDS=0.8 x Max Rating, VGS=0V
VGS = -12V, ID = -26A
—
-3.0
V
TC = 25°C, IS = -35A,VGS = 0V
V
ˆ
1011 Rads (Si)/sec 1012 Rads (Si)/sec
VDSS
Parameter
Min Typ Max
Min Typ Max
Drain-to-Source Voltage
—
-48
—
—
— -100
— -160
0.8 —
IPP
di/dt
L1
—
— -100
— -800
0.1 —
Table 3. Single Event Effects
—
—
-48
—
—
Units
Test Conditions
V
Applied drain-to-source voltage during
gamma-dot
A
Peak radiation induced photo-current
A/µsec Rate of rise of photo-current
µH
Circuit inductance required to limit di/dt
‰
Parameter
Typical
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
-60
V
Ni
28
1 x 10 5
~41
-60
5
To Order
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IRHM9064
Pre-Radiation
† Total Dose Irradiation with VGS Bias.
 Repetitive Rating; Pulse width limited by
maximum junction temperature.
Refer to current HEXFET reliability report.
‚ @ VDD = -25V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = -35A, VGS = -12 V, 25 ≤ RG ≤ 200Ω
ƒ ISD ≤ -35A, di/dt ≤−170 A/µs,
VDD ≤ BV DSS, T J ≤ 150°C
Suggested RG = 2.35Ω
„ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
‡
ˆ
‰
Š
-12 volt V GS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019.
Total Dose Irradiation with VDS Bias.
VDS = 0.8 rated BVDSS (pre-radiation)
applied and V GS = 0 during irradiation per
MlL-STD-750, method 1019.
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse.
Process characterized by independent laboratory.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
* Current is limited by Pin diameter
Case Outline and Dimensions —
.1 2 ( .00 5 )
.1 2 ( .0 05 )
1 3 .8 4 ( .54 5 )
1 3 .5 9 ( .53 5 )
3 .7 8 ( .14 9 )
3 .5 3 ( .13 9 )
-A -
-B6.6 0 ( .26 0 )
6.3 2 ( .24 9 )
-B -
13 .84 ( .5 4 5 )
13 .59 ( .5 3 5 )
3 .78 ( .1 49 )
3 .53 ( .1 39 )
- A-
6.6 0 ( .26 0 )
6.3 2 ( .24 9 )
1 .27 ( .0 50 )
1 .02 ( .0 40 )
1 .27 ( .05 0 )
1 .02 ( .04 0 )
3 1.4 0 ( 1.2 35 )
3 0.3 9 ( 1.1 99 )
2 1.9 8 ( .86 5 )
2 0.9 5 ( .82 5 )
20 .32 ( .8 00 )
20 .07 ( .7 90 )
1 7.40 ( .6 85 )
1 6.89 ( .6 65 )
1
2
1 3.8 4 ( .5 4 5 )
1 3.5 9 ( .5 3 5 )
3
2 0 .3 2 ( .8 00 )
2 0 .0 7 ( .7 90 )
1 7 .40 ( .6 85 )
1 6 .89 ( .6 65 )
L EGE ND
1
1 - C OL L EC TOR W
2 - EMITTER
2
-C -
3X
3 .8 1 ( .1 50 )
2X
3X
1 .14 ( .0 45 )
0 .89 ( .0 35 )
.50 ( .0 2 0 )
.25 ( .0 1 0 )
1 .5 2 ( .0 60 ) R
M IN .
3 .2
3.1
3 - GATE
-C -
3 .81 ( .1 50 )
2X
1 3.8 4 ( .54 5 )
1 3.5 9 ( .53 5 )
3
3.8 1 ( .15 0 )
M C A M B
M C
N OTE S:
1 . D IME NS ION IN G & TOLE RA NC IN G PE R AN SI Y 14 .5M, 1 98 2.
1 .14 ( .0 45 )
0 .89 ( .0 35 )
.5 0 ( .02 0 )
.2 5 ( .01 0 )
N OTE S :
1. DIME NS ION ING & TOL ER AN C IN G PE R AN S I Y1 4 .5 M-1 9 82 .
2. AL L D IM EN SIONS AR E SH OW N IN MIL LIMETE R S ( IN C HE S ).
3. LE AD FOR M IS A VA IL ABL E IN E ITH ER OR IEN TA TION :
3.1 EXAM PL E : IR FM4 50 0
3.2 EXAM PL E : IR FM4 50 U
4 .8 3 ( .1 90 )
3 .8 1 ( .1 50 )
4 .01 ( .15 8 )
3 .61 ( .14 2 )
M C A M B
M C
L EGE ND
1 - C OLL EC TOR
2 - EM ITTE R
3 - GATE
2 . AL L D IM EN SIONS A RE S HOW N IN MILL IMETER S ( IN C HE S ).
Conforms to JEDEC Outline TO-254AA
Dimensions in Millimeters and ( Inches )
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblashted,
machined, or have other operations perfomed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium
oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
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