PD - 90889D IRHM9150 JANSR2N7422 100V, P-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) REF: MIL-PRF-19500/662 ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHM9150 100K Rads (Si) 0.080Ω IRHM93150 300K Rads (Si) 0.080Ω ID -22A -22A QPL Part Number JANSR2N7422 JANSF2N7422 International Rectifier’s RADHard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = -12V, TC = 25°C ID @ VGS = -12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Lead Temperature Weight Units -22 -14 -88 150 1.2 ±20 500 -22 15 -23 -55 to 150 A W W/°C V mJ A mJ V/ns o C 300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (typical) g For footnotes refer to the last page www.irf.com 1 2/18/03 IRHM9150 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 6.8 -100 100 200 35 48 40 170 190 190 — Test Conditions V VGS = 0V, ID =-1.0mA V/°C Reference to 25°C, ID = -1.0mA VGS = -12V, ID = -14A➃ VGS = -12V, ID = -22A➃ VDS = VGS, ID = -1.0mA VDS >-15V, IDS = -14A ➃ VDS= -80V ,VGS=0V VDS = -80V, VGS = 0V, TJ = 125°C VGS = -20V VGS = 20V VGS =-12V, ID = -22A VDS = -50V Ω V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage -100 — — ∆BV DSS/∆T J Temperature Coefficient of Breakdown — -0.093 — Voltage RDS(on) Static Drain-to-Source On-State — — 0.080 Resistance — — 0.085 VGS(th) Gate Threshold Voltage -2.0 — -4.0 g fs Forward Transconductance 11 — — IDSS Zero Gate Voltage Drain Current — — -25 — — -250 µA nA nC VDD = -50V, ID = -22A, VGS =-12V, RG = 2.35Ω ns nH Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package) Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 4300 1100 310 — — — pF VGS = 0V, VDS = -25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ — — — — -22 -88 A VSD t rr QRR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge — — — — — — -3.0 300 1.5 V nS µC t on Forward Turn-On Time Test Conditions Tj = 25°C, IS = -22A, VGS = 0V ➃ Tj = 25°C, IF = -22A, di/dt ≤ -100A/µs VDD ≤ -50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA RthCS Junction-to-Case Junction-to-Ambient Case-to-Sink Min Typ Max — — — — 0.83 — 48 0.21 — Units Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM9150 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (TO-254) Diode Forward Voltage ➃ Units 300K Rads (Si)2 Test Conditions Min Max Min Max -100 -2.0 — — — — — -4.0 -100 100 -25 0.080 -100 -2.0 — — — — — -5.0 -100 100 -25 0.080 µA Ω VGS = 0V, ID = -1.0mA VGS = VDS, I D = -1.0mA VGS = -20V VGS = 20 V VDS =-80V, VGS =0V VGS = -12V, ID =-14A — 0.080 0.080 Ω VGS = -12V, ID =-14A — -3.0 -3.0 V VGS = 0V, IS = -22A — — V nA 1. Part number IRHM9150 (JANSR2N7422) 2. Part number IRHM93150 (JANSF2N7422) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion LE T MeV/(mg/cm²)) Energy (MeV) VD S(V) Range (µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=20V Cu 28 285 43 -100 -100 -100 -70 -60 Br 36.8 305 39 -100 -100 -70 -50 -40 I 59.9 345 32.8 -60 — — — — -120 -100 VDS -80 Cu -60 Br -40 I -20 0 0 5 10 15 20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM9150 100 Pre-Irradiation 100 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) -5.0V 20µs PULSE WIDTH T = 25 C J 10 1 -5.0V 10 1 100 - I D, TJ = 150 ° C V DS = -50V 20µs PULSE WIDTH 9 - VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 R DS(on) , Drain-to-Source On Resistance (Normalized) Drain-to-Source Current (A) TJ = 25 ° C 8 10 100 Fig 2. Typical Output Characteristics 3.0 7 ° -VDS , Drain-to-Source Voltage (V) 100 6 J 10 Fig 1. Typical Output Characteristics 10 20µs PULSE WIDTH T = 150 C ° -VDS , Drain-to-Source Voltage (V) 5 VGS -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V TOP TOP ID = -22A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = -12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs.Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 6000 Ciss 5000 4000 3000 Coss 2000 C rss 1000 20 -VGS, Gate-to-Source Voltage (V) 7000 C, Capacitance (pF) IRHM9150 ID = -22A VDS = -80V VDS = -50V VDS = -20V 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 1 10 0 100 40 80 120 160 200 Q G , Total Gate Charge (nC) -VDS , Drain-to-Source Voltage (V) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 100 OPERATION IN THIS AREA LIMITED BY R -II D , Drain Current (A) -ISD , Reverse Drain Current (A) DS(on) TJ = 150 ° C 10 TJ = 25 ° C V GS = 0 V 1 0.0 1.0 2.0 3.0 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 4.0 100 100us 1ms 10 10ms 1 TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 -VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM9150 Pre-Irradiation 24 RD VDS VGS 20 D.U.T. -I D , Drain Current (A) RG - + V DD 16 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 12 Fig 10a. Switching Time Test Circuit 8 td(on) 4 tr t d(off) tf VGS 10% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 90% VDS Fig 9. Maximum Drain Current Vs. CaseTemperature Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.1 0.01 0.001 0.00001 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM9150 L VDS tp VD D A IA S D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS EAS , Single Pulse Avalanche Energy (mJ) D .U .T RG -2 V V0GS 1200 TOP 1000 BOTTOM ID -9.8A -14A -22A 800 600 400 200 0 25 50 75 100 125 150 Starting T J , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG -12V 12V .2µF .3µF -12V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM9150 Pre-Irradiation Foot Notes: ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = -25V, starting TJ = 25°C, L=2.1mH Peak I L = -22A, VGS =-12V ➂ ISD ≤ -22A, di/dt ≤ -450A/µs, VDD ≤ -100V, TJ ≤ 150°C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. -80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — TO-254AA 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] A 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 C 2 2X 1.27 [.050] 1.02 [.040] B 17.40 [.685] 16.89 [.665] 22.73 [.895] 21.21 [.835] 0.36 [.014] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 0.84 [.033] MAX. 4.82 [.190] 3.81 [.150] 3.81 [.150] 1.14 [.045] 0.89 [.035] 1.27 [.050] 1.02 [.040] A 3 3X 3.81 [.150] 13.84 [.545] 13.59 [.535] 0.12 [.005] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 2X 3.81 [.150] 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A B A NOT ES : 1. DIMENSIONING & TOLERANCING PE R ASME Y14.5M-1994. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES]. 3. CONT ROLLING DIMENSION: INCH. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA. PIN ASSIGNMENT S 1 = DRAIN 2 = SOURCE 3 = GATE CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 02/03 8 www.irf.com