IRF IRHMS597260 Simple drive requirement Datasheet

PD-94605E
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-254AA)
IRHMS597260
200V, P-CHANNEL
5
™
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on) I D
IRHMS597260 100K Rads (Si) 0.103Ω -30A
IRHMS593260 300K Rads (Si) 0.103Ω -30A
Low-Ohmic
TO-254AA
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
of low RDS(on) and low gate charge reduces the power
losses in switching applications such as DC to DC
converters and motor control. These devices retain
all of the well established advantages of MOSFETs
such as voltage control, fast switching, ease of
paralleling and temperature stability of electrical
parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Electrically Isolated
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC =100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-30
-19
-120
208
1.67
±20
332
-30
20.8
-4.1
-55 to 150
300 (0.063in./1.6mm from case for 10s)
9.3 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
01/16/07
IRHMS597260
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-200
∆BVDSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
23
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
Typ Max Units
Test Conditions
—
—
-0.25
—
V
V/°C
—
0.103
Ω
VGS = -12V, ID = -19A Ã
—
—
—
—
-4.0
—
-10
-25
V
S
—
—
—
—
—
—
—
—
—
4.0
-100
100
180
75
50
50
100
190
175
—
nC
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -19A Ã
VDS= -160V ,VGS=0V
VDS = -160V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -30A
VDS = -100V
ns
VDD = -100V, ID = -30A
VGS =-12V, RG = 1.20Ω
µA
nA
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
nH Measured from Drain lead (6mm /.25in.from
package) to Source lead (6mm /0.25in.
from package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
7170
920
86
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-30
-120
-5.0
300
6.0
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = -30A, VGS = 0V Ã
Tj = 25°C, IF = -30A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
0.21
—
0.6
—
48
Test Conditions
°C/W
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHMS597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
VSD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Diode Forward Voltage Ã
100K Rads(Si)1
Min
Max
300KRads(Si)2
Min
Max
-200
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.103
-200
-2.0
—
—
—
—
—
-5.0
—
Units
—
-5.0
-100
100
-10
0.103
µA
Ω
-5.0
V
Test Conditions
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS =-20V
VGS = 20 V
VDS = -160V, VGS =0V
VGS = -12V, ID =-19A
V
nA
VGS = 0V, IS = -30A
1. Part number IRHMS597260
2. Part number IRHMS593260
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
37.3
59.9
82.3
VDS (V)
Range
(µm) @VGS= 0V @VGS= 5V @VGS=10V @VGS= 15V
36.8
- 200
- 200
- 200
- 200
32.7
- 200
- 200
- 200
- 50
28.5
- 200
- 200
- 200
- 35
Energy
(MeV)
285
345
357
@VGS= 20V
-75
—
—
-250
VDS
-200
Br
-150
I
-100
Au
-50
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHMS597260
Pre-Irradiation
1000
VGS
TOP
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
100
100
-5.0V
10
20µs PULSE WIDTH
Tj = 25°C
1
-5.0V
10
20µs PULSE WIDTH
Tj = 150°C
1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current ( Α)
2.5
T J = 25°C
100
T J = 150°C
VDS = -50V
20µs PULSE
15 WIDTH
10
5.5
6
6.5
7
7.5
10
100
Fig 2. Typical Output Characteristics
1000
5
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
8
-V GS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
- 6.0V
BOTTOM -5.0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
1000
-32A
ID = -30A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
12000
16
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
-V GS, Gate-to-Source Voltage (V)
8000
Ciss
6000
4000
VDS= -160V
VDS= -100V
ID= -30A
-32A
Crss = Cgd
Coss = Cds + Cgd
10000
C, Capacitance (pF)
IRHMS597260
Coss
2000
VDS= -40V
12
8
4
Crss
0
1
10
0
100
0
20
-VDS, Drain-to-Source Voltage (V)
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current ( Α)
40
100
100
T J = 150°C
10
TJ = 25°C
1
VGS = 0V
0.1
0.5
1.5
2.5
3.5
4.5
5.5
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µs
10
1ms
1
6.5
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
10
100
1000
-V DS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHMS597260
Pre-Irradiation
30
RD
V DS
-I D, Drain Current (A)
V GS
D.U.T.
RG
-
+
20
V DD
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
10
Fig 10a. Switching Time Test Circuit
td(on)
tr
t d(off)
tf
VGS
0
10%
25
50
75
100
125
150
T C , Case Temperature (°C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHMS597260
800
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
DRIVER
A
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
L
VDS
ID
-13.4A
-19A
BOTTOM -30A
TOP
600
400
200
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHMS597260
Pre-Irradiation
Footnotes:
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -50V, starting TJ = 25°C, L=0.73mH
Peak IL = -30A, VGS = -12V
 ISD ≤ -30A, di/dt ≤ -220A/µs,
VDD ≤ -200V, TJ ≤ 150°C
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — Low-Omic TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
6.60 [.260]
6.32 [.249]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
1
C
2
2X
B
3
14.48 [.570]
12.95 [.510]
3X
3.81 [.150]
13.84 [.545]
13.59 [.535]
1.27 [.050]
1.02 [.040]
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
0.36 [.014]
3.81 [.150]
B A
NOT ES:
1.
2.
3.
4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
CONTROLLING DIMENSION: INCH.
CONFORMS TO JEDEC OUTLINE TO-254AA.
PIN ASSIGNMENTS
1 = DRAIN
2 = SOURCE
3 = GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that
will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 01/2008
8
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