IRF IRHN7250 Transistor n-channel(bvdss=200v, rds(on)=0.10ohm, id=26a) Datasheet

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Provisional Data Sheet PD 9.679C
IRHN7250
IRHN8250
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET® TRANSISTOR
N-CHANNEL
MEGA RAD HARD
Ω , MEGA RAD HARD HEXFET
200 Volt, 0.10Ω
International Rectifier’s MEGA RAD HARD technology
HEXFET power MOSFETs demonstrate excellent
threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads
(Si). Under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs
retain identical electrical specifications up to 1 x 105
Rads (Si) total dose. At 1 x 106 Rads (Si) total dose,
under the same pre-dose conditions, only minor shifts
in the electrical specifications are observed and are so
specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable
of surviving transient ionization pulses as high as 1 x
1012 Rads (Si)/Sec, and return to normal operation within
a few microseconds. Single Event Effect (SEE) testing
of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the
MEGA RAD HARD process utilizes International
Rectifier’s patented HEXFET technology, the user can
expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors also feature all of the
well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and
temperature stability of the electrical parameters.
They are well-suited for applications such as switching
power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space
and weapons environments.
Product Summary
Part Number
IRHN7250
IRHN8250
BV DSS
200V
200V
RDS(on)
0.10Ω
0.10Ω
ID
26A
26A
Features:
■
■
■
■
■
■
■
■
■
■
■
■
■
Radiation Hardened up to 1 x 10 6 Rads (Si)
Single Event Burnout (SEB) Hardened
Single Event Gate Rupture (SEGR) Hardened
Gamma Dot (Flash X-Ray) Hardened
Neutron Tolerant
Identical Pre- and Post-Electrical Test Conditions
Repetitive Avalanche Rating
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Light-weight
Absolute Maximum Ratings
Pre-Radiation
Parameter
I D @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current ➀
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy ➁
I AR
Avalanche Current ➀
EAR
Repetitive Avalanche Energy ➀
dv/dt
Peak Diode Recovery dv/dt ➂
TJ
Operating Junction
TSTG
Storage Temperature Range
Package Mounting Surface Temperature
Weight
To Order
IRHN7250, IRHN8250
26
16
104
150
1.2
±20
500
26
15
5.0
-55 to 150
Units
A
W
W/K ➄
V
mJ
A
mJ
V/ns
oC
300 (for 5 sec.)
2.6 (typical)
g
F-347
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min.
Typ. Max. Units
200
—
—
0.28
—
—
—
—
2.0
8.0
—
—
—
—
—
—
—
—
0.10
0.11
4.0
—
25
250
V
V/°C
IGSS
IGSS
Qg
Qgs
Qgd
t d(on)
tr
td(off)
tf
LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.0
100
-100
170
30
60
33
140
140
140
—
LS
Internal Source Inductance
—
4.1
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4700
850
210
—
—
—
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
∆BVDSS/∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
µA
nA
nC
ns
nH
pF
Test Conditions
VGS = 0V, ID = 1.0 mA
Reference to 25°C, ID = 1.0 mA
VGS = 12V, ID = 16A
➃
VGS = 12V, ID = 26A
VDS = VGS, ID = 1.0 mA
VDS > 15V, I DS = 16A ➃
VDS = 0.8 x Max Rating,VGS = 0V
VDS = 0.8 x Max Rating
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, I D = 26A
VDS = Max. Rating x 0.5
(see figures 23 and 31)
VDD = 100V, ID = 26A,
RG = 2.35Ω
(see figure 22)
Measured from the
Modified MOSFET
drain lead, 6mm (0.25 symbol showing the
in.) from package to
internal inductances.
center of die.
Measured from the
source lead, 6mm
(0.25 in.) from package
to source bonding pad.
VGS = 0V, VDS = 25V
f = 1.0 MHz
(see figure 22)
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
IS
I SM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
—
—
—
—
26
104
A
VSD
t rr
Q RR
t on
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
1.9
820
12
V
ns
µC
Forward Turn-On Time
Test Conditions
Modified MOSFET symbol showing the
integral reverse p-n junction rectifier.
Tj = 25°C, IS = 26A, VGS = 0V ➃
Tj = 25°C, IF = 26A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
Min. Typ. Max. Units
RthJC
Junction-to-Case
—
—
0.83
RthJPCB
Junction-to-PC board
—
TBD
—
Test Conditions
K/W➄
F-348
To Order
soldered to a copper-clad PC board
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IRHN7250/IRHN8250 Devices
Post-Radiation Characteristics
Radiation Performance of Mega Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs
are tested to verify their hardness capability. The
hardness assurance program at International Rectifier uses two radiation environments.
Every manufacturing lot is tested in a low dose rate
(total dose) environment per MlL-STD-750, test
method 1019. International Rectifier has imposed a
standard gate voltage of 12 volts per note 6 and
figure 8a and a VDSS bias condition equal to 80%
of the device rated voltage per note 7 and figure
8b. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN7250. Device
performance limits at a post radiation level of 1 x
106 Rads (Si) are presented in Table 1, column 2,
IRHN8250. The values in Table 1 will be met for either of the two low dose rate test circuits that are
used. Typical delta curves showing radiation response appear in figures 1 through 5. Typical postradiation curves appear in figures 10 through 17.
Table 1. Low Dose Rate ➅ ➆
VSD
High dose rate testing may be done on a special
request basis, using a dose rate up to 1 x 1012 Rads
(Si)/Sec. Photocurrent and transient voltage waveforms are shown in figure 7, and the recommended
test circuit to be used is shown in figure 9.
International Rectifier radiation hardened HEXFETs
have been characterized in neutron and heavy ion
Single Event Effects (SEE) environments. The effects on bulk silicon of the type used by International Rectifier on RAD HARD HEXFETs are shown
in figure 6. Single Event Effects characterization is
shown in Table 3.
IRHN7250
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)1
Both pre- and post-radiation performance are tested
and specified using the same drive circuitry and test
conditions in order to provide a direct comparison. It
should be noted that at a radiation level of 1 x 105
Rads (Si), no change in limits are specified in DC
parameters. At a radiation level of 1 x106 Rads (Si),
leakage remains low and the device is usable with
no change in drive circuitry required.
IRHN8250
100K Rads (Si) 1000K Rads (Si) Units
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage ➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance One
Diode Forward Voltage ➃
Test Conditions ➉
min.
max.
min.
max.
200
2.0
—
—
—
—
—
4.0
100
-100
25
0.10
200
1.25
—
—
—
—
—
4.5
100
-100
50
0.150
nA
µA
Ω
VGS = 0V, ID = 1.0 mA
VGS = VDS, I D = 1.0 mA
VGS = +20V
VGS = -20V
VDS = 0.8 x Max Rating, VGS = 0
VGS = 12V, ID = 16A
—
1.9
—
1.9
V
TC = 25°C, IS = 26A,VGS = 0V
V
Table 2. High Dose Rate ➇
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS
Min. Typ Max. Min. Typ. Max. Units
Test Conditions
—
— 160 —
—
160
V
Applied drain-to-source voltage
during gamma-dot
—
15 —
— 15
—
A
Peak radiation induced photo-current
—
— 160 —
—
8.0 A/µsec Rate of rise of photo-current
1.0 —
—
20
—
—
µH
Circuit inductance required to limit di/dt
Drain-to-Source Voltage
IPP
di/dt
L1
Table 3. Single Event Effects ➈
Parameter
Typ.
Units
Ion
LET (Si)
(MeV/mg/cm2)
Fluence
(ions/cm2)
Range
(µm)
VDS Bias
(V)
VGS Bias
(V)
BVDSS
200
V
Ni
28
1 x 105
~41
160
-5
To Order
F-349
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IRHN7250/IRHN8250 Devices
Post-Radiation
VGS = 12V
ID = 16A
Figure 1. – Typical Response of Gate Threshold Voltage
Vs. Total Dose Exposure
Figure 2. – Typical Response of On-State Resistance
Vs. Total Dose Exposure
VDS ≥ 15V
ID = 16A
Figure 3. – Typical Response of Transconductance Vs.
Total Dose Exposure
F-350
Figure 4. – Typical Response of Drain-to-Source
Breakdown Vs. Total Dose Exposure
To Order
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IRHN7250/IRHN8250 Devices
Post-Radiation
Figure 5. – Typical Zero Gate Voltage Drain Current
Vs. Total Dose Exposure
Figure 6. – Typical On-State Resistance Vs. Neutron
Fluence Level
Figure 8a. – During Radiation
Gate Stress of VGSS = 12V
Figure 8b. – During Radiation
VDSS Stress = 80% of B VDSS
Figure 7. – Typical Transient Response
of Rad Hard HEXFET During 1 x1012 Rad
(Si)/Sec Exposure
Figure 9. – High Dose Rate
(Gamma Dot) Test Circuit
To Order
F-351
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IRHN7250/IRHN8250 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; VGS = 12 V dc, VDS = 0 Vdc
F-352
Figure 10. – Typical Output Characteristics
Pre-Radiation
Figure 11. – Typical Output Characteristics
Post-Radiation 100K Rads (Si)
Figure 12. – Typical Output Characteristics
Post-Radiation 300K Rads (Si)
Figure 13. – Typical Output Characteristics
Post-Radiation 1 Mega Rads (Si)
To Order
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IRHN7250/IRHN8250 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; VGS = 0 V dc, VDS = 160 Vdc
Figure 14. – Typical Output Characteristics
Pre-Radiation
Figure 15. – Typical Output Characteristics
Post-Radiation 100K Rads (Si)
Figure 16. – Typical Output Characteristics
Post-Radiation 300K Rads (Si)
Figure 17. – Typical Output Characteristics
Post-Radiation 1 Mega Rads (Si)
To Order
F-353
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Figure 18. – Typical Output Characteristics, TC = 25°°C
Figure 19. – Typical Output Characteristics, T C =
150°° C
ID = 26A
Figure 20. – Typical Transfer Characteristics
F-354
Figure 21. – Normalized On-Resistance Vs. Temperature
To Order
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IRHN7250/IRHN8250 Devices
Pre-Radiation
ID = 26A
Figure 22. – Typical Capacitance Vs. Drain-to-Source
Voltage
Figure 23. – Typical Gate Charge Vs. Gate-to-Source
Voltage
1000
I D , Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
100
10us
100us
10
1
1ms
10ms
TC = 25 o C
TJ = 150 o C
Single25.
Pulse
Figure
– Maximum Safe Operating Area
1
10
100
1000
V DS, Drain-to-Source Voltage (V)
Figure 24. – Typical Source-Drain Diode Forward
Voltage
Figure 25. – Maximum Safe Operating Area
To Order
F-355
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IRHN7250/IRHN8250 Devices
Pre-Radiation
1
Thermal Response (Z thJC
)
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
0.001
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1, Rectangular Pulse Duration (sec)
Figure 26. – Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
30
I D , Drain Current (A)
25
20
15
10
5
0
25
50
75
100
T C , Case Temperature
125
150
( °C)
Figure 27. – Maximum Drain Current Vs. Case Temperature
F-356
To Order
10
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IRHN7250/IRHN8250 Devices
Pre-Radiation
RD
VDS
VDS
VGS
90%
D.U.T.
RG
+
-VDD
10V
10%
VGS
Pulse Width ≤ 1
Duty Factor ≤ 0.1
td(on)
Figure 28a. – Switching Time Test Circuit
tr
t d(off)
tf
Figure 28b. – Switching Time Waveforms
15 V
V (B R )D S S
tp
L
VD S
D .U.T
RG
IA S
20V
tp
D R IV ER
+
V
- DD
A
0 .0 1 Ω
IAS
Figure 29a. – Unclamped Inductive Test Curcuit
Figure 29b. – Unclamped Inductive Waveforms
To Order
F-357
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IRHN7250/IRHN8250 Devices
Pre-Radiation
ID = 26A26.7A
Figure 29c. – Maximum Avalanche Energy Vs. Starting
Junction Temperature
Figure 30. – Peak Diode Recovery dv/dt Test Circuit
F-358
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Current Regulator
Same Type as D.U.T.
50KΩ
12V
QG
.2µF
.3µF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
Charge
IG
ID
Current Sampling Resistors
Figure 31a. – Basic Gate Charge Waveform
Figure 31b. – Gate Charge Test Circuit
Figure 32 – Typical Time to Accumulated 1% Failure
To Order
F-359
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IRHN7250/IRHN8250 Devices
➅ Total Dose Irradiation with VGS Bias.
➀ Repetitive Rating; Pulse width limited by
➁
➂
➃
➄
maximum junction temperature. (figure 26)
Refer to current HEXFET reliability report.
@ VDD = 50V, Starting TJ = 25°C,
EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)]
Peak IL = 26A, 25 ≤ RG ≤ 200Ω
I SD ≤ 26A, di/dt ≤ 190 A/µs,
VDD ≤ BVDSS, TJ ≤ 150°C
Suggested RG = 2.35Ω
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
K/W = °C/W
W/K = W/°C
➆
➇
➈
➉
Case Outline and Dimensions – SMD-1
+12 volt VGS applied and VDS = 0 during irradiation
per MIL-STD-750, method 1019. (figure 8a)
Total Dose Irradiation with VDS Bias.
VDS = 0.8 x rated BV DSS (pre-radiation)
applied and VGS = 0 during irradiation per
MlL-STD-750, method 1019. (figure 8b)
This test is performed using a flash x-ray
source operated in the e-beam mode (energy
~2.5 MeV), 30 nsec pulse. (figure 9)
Study sponsored by NASA. Evaluation performed
at Brookhaven National Labs.
All Pre-Radiation and Post-Radiation test
conditions are identical to facilitate direct
comparison for circuit applications.
Notes:
1. Dimensioning and Tolerancing per ANSI Y14.5M-1982
2. Controlling Dimension: Inch
3. Dimensions are shown in millimeters (Inches)
4 Dimension includes metallization flash
5 Dimension does not include metallization flash
F-360
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http://www.irf.com/
Data and specifications subject to change without notice.
1/97
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