PD - 91798A RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) IRHNB7260 200V, N-CHANNEL ® ™ RAD Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNB7260 100K Rads (Si) IRHNB3260 300K Rads (Si) IRHNB4260 600K Rads (Si) IRHNB8260 1000K Rads (Si) R DS(on) 0.070Ω 0.070Ω 0.070Ω 0.070Ω ID 43A 43A 43A 43A SMD-3 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Package Mounting Surface Temperature Weight Units 43 27 172 300 2.4 ±20 500 43 30 5.7 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (for 5 Sec.) 3.5 (Typical ) C g For footnotes refer to the last page www.irf.com 1 12/7/01 IRHNB7260 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min Typ Max Units 200 — — V — 0.26 — V/°C — — 2.0 9.0 — — — — — — — — 0.070 0.077 4.0 — 25 250 Ω IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 290 42 120 50 200 200 130 — C iss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5300 1200 360 — — — Test Conditions VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID =27A ➃ VGS = 12V, ID = 43A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 27A ➃ VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID =43A VDS = 100V V S( ) Ω Parameter BVDSS Drain-to-Source Breakdown Voltage ∆BVDSS/∆TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nC VDD = 100V, ID =43A VGS =12V, RG = 2.35Ω ns nH Measured from the center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 43 172 1.8 820 8.5 Test Conditions A V nS µC Tj = 25°C, IS = 43A, VGS = 0V ➃ Tj = 25°C, IF = 43A, di/dt ≤ 100A/µs VDD ≤ 50V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter R thJC RthJ-PCB Junction-to-Case Junction-to-PC board Min Typ Max Units — — — 1.6 0.42 — Test Conditions °C/W Soldered to a 1” sq. copper-clad board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNB7260 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads (Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-3) Diode Forward Voltage ➃ 300 - 1000K Rads (Si)2 Test Conditions Units Min Max Min Max 200 2.0 — — — — — 4.0 100 -100 25 0.070 200 1.25 — — — — — 4.5 100 -100 50 0.110 µA Ω VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=160V, VGS =0V VGS = 12V, ID =27A — 0.070 — 0.110 Ω VGS = 12V, ID =27A — 1.8 — 1.8 V V nA VGS = 0V, IS = 43A 1. Part number IRHNB7260 2. Part numbers IRHNB3260, IRHNB4260 and IRHNB8260 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area VD S(V) Ion LE T MeV/(mg/cm²)) Energy (MeV) Range (µm) Cu 28 285 43 190 180 170 125 — Br 36.8 305 39 100 100 100 50 — @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 200 VDS 150 Cu 100 Br 50 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNB7260 Pre-Irradiation 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 20µs PULSE WIDTH T = 25 C 5.0V J 10 1 5.0V ° 10 100 1 3.0 TJ = 150 ° C V DS = 50V 20µs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 12 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25 ° C 5 10 100 Fig 2. Typical Output Characteristics 1000 10 ° VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 20µs PULSE WIDTH T = 150 C J 10 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 43A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 8000 C iss 6000 4000 C oss 2000 C rss 20 VGS , Gate-to-Source Voltage (V) 10000 C, Capacitance (pF) IRHNB7260 ID = 43 A 16 12 8 4 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 40 VDS , Drain-to-Source Voltage (V) 80 120 160 200 240 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 ISD , Reverse Drain Current (A) VDS = 160V VDS = 100V VDS = 40V 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) 100 10us 100 TJ = 150 ° C 10 TJ = 25 ° C 100us 1ms 10 1 0.1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 1 10ms TC = 25 ° C TJ = 150 ° C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNB7260 Pre-Irradiation 50 RD VDS VGS I D , Drain Current (A) 40 D.U.T. RG + -VDD 30 VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNB7260 L D .U .T RG IA S VGS 20V D R IV E R + - VD D 0 .0 1 Ω tp ID 19A 27A BOTTOM 43A TOP 1000 1 5V VD S EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit A 800 600 400 200 0 25 V (B R )D S S 50 75 100 125 150 Starting TJ , Junction Temperature ( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNB7260 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 50V, starting TJ = 25°C, L=0.54mH Peak IL = 43A, VGS =12V ➂ ISD ≤ 43A, di/dt ≤ 410A/µs, VDD ≤ 200V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-3 PAD ASSIGNMENTS IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01 8 www.irf.com