IRF IRHNJ597130 Simple drive requirement Datasheet

PD-94047B
IRHNJ597130
RADIATION HARDENED
JANSR2N7545U3
REF: MIL-PRF-19500/712
POWER MOSFET
100V, P-CHANNEL
SURFACE MOUNT (SMD-0.5)
5
Product Summary
Part Number
IRHNJ597130
IRHNJ593130
Radiation Level
100K Rads (Si)
300K Rads (Si)
Rds(on)
0.205 Ω
0.205 Ω
ID
-12.5A
-12.5A
™
TECHNOLOGY
QPL Part Number
JANSR2N7545U3
JANSF2N7545U3
SMD-0.5
International Rectifier’s R5TM technology provides high
performance power MOSFETs for space applications.
These devices have been characterized for Single
Event Effects (SEE) with useful performance up to an
LET of 80 (MeV/(mg/cm2)). The combination of low
RDS(on) and low gate charge reduces the power losses
in switching applications such as DC to DC converters
and motor control. These devices retain all of the well
established advantages of MOSFETs such as voltage
control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ V GS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
-12.5
-8.0
-50
75
0.6
±20
96
-12.5
7.5
-6.2
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 ( for 5s )
1.0 ( Typical )
g
For footnotes refer to the last page
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1
02/16/06
IRHNJ597130, JANSR2N7545U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
Drain-to-Source Breakdown Voltage
-100
—
—
V
VGS = 0V, ID = -1.0mA
—
-0.12
—
V/°C
Reference to 25°C, ID = -1.0mA
—
—
0.205
Ω
-2.0
6.3
—
—
—
—
—
—
-4.0
—
-10
-25
V
S( )
∆BV DSS/∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
Ω
BVDSS
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
-100
100
45
16
11
25
55
30
100
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1372
326
20
—
—
—
nA
nC
ns
nH
pF
Test Conditions
VGS = -12V, ID = -8.0A
Ã
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = -8.0A Ã
VDS= -80V ,VGS=0V
VDS = -80V,
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS =-12V, ID = -12.5A
VDS = -50V
VDD = -50V, ID = -12.5A,
VGS =-12V, RG = 7.5Ω
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-12.5
-50
-5.0
191
778
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -12.5A, VGS = 0V Ã
Tj = 25°C, IF =-12.5A, di/dt ≤ -100A/µs
VDD ≤ -50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on the International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHNJ597130, JANSR2N7545U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source Ã
On-State Resistance (TO-3)
Static Drain-to-Source Ã
On-State Resistance (SMD-0.5)
Diode Forward Voltage Ã
300KRads(Si)2
Min
Max
Units
Test Conditions
V
-100
-2.0
—
—
—
—
—
-4.0
-100
100
-10
0.205
-100
-2.0
—
—
—
—
—
-5.0
-100
100
-10
0.205
nA
µA
Ω
VGS = 0V, I D = -1.0mA
VGS = VDS , ID = -1.0mA
VGS =-20V
VGS = 20 V
V DS=-80V, VGS =0V
VGS = -12V, ID =-8.0A
—
0.205
—
0.205
Ω
VGS = -12V, ID =-8.0A
—
-5.0
—
-5.0
V
V GS = 0V, IS = -12.5A
1. Part number IRHNJ597130 (JANSR2N7545U3)
2. Part number IRHNJ593130 (JANSF2N7545U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Br
I
Au
LET
(MeV/(mg/cm2))
37.9
59.7
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=5V @VGS=10V @VGS=15V @VGS=17.5V @VGS=20V
33.1
-100
-100
-100
-100
-100
-100
30.5
-100
-100
-100
-100
-75
-25
28.4
-100
-100
-100
-30
—
—
Energy
(MeV)
252.6
314
350
-120
-100
VDS
-80
Br
-60
I
Au
-40
-20
0
0
5
10
15
20
25
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHNJ597130, JANSR2N7545U3
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-5.0V
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
10
-5.0V
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
TJ = 150 ° C
10
V DS = 15
-25V
20µs PULSE WIDTH
7
8
9
10
11
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
100
6
1
-VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
-VDS , Drain-to-Source Voltage (V)
5
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -12.5A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
2000
20
-VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1600
C, Capacitance (pF)
IRHNJ597130, JANSR2N7545U3
Ciss
1200
Coss
800
400
ID = -12.5A
VDS =-80V
VDS =-50V
VDS =-20V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
10
-VDS , Drain-to-Source Voltage (V)
30
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
-I D, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
20
QG , Total Gate Charge (nC)
10
TJ = 150 ° C
TJ = 25 ° C
1
V GS = 0 V
0.1
0.0
1.0
2.0
3.0
4.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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5.0
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µs
10
1ms
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
1000
-VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ597130, JANSR2N7545U3
Pre-Irradiation
14
V GS
12
D.U.T.
RG
-
10
V DD
+
V GS
8
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
td(on)
2
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
90%
Fig 9. Maximum Drain Current Vs.
Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
-ID , Drain Current (A)
RD
V DS
1 D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHNJ597130, JANSR2N7545U3
L
200
-
D.U.T
RG
VGS
-20V
+
IAS
tp
VVDD
DD
A
DRIVER
0.01Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
I AS
EAS , Single Pulse Avalanche Energy (mJ)
VDS
ID
-5.6A
-8.0A
BOTTOM -12.5A
TOP
160
120
80
40
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-12 V
QGS
50KΩ
-12V
12V
.2µF
.3µF
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ597130, JANSR2N7545U3
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = -25V, starting TJ = 25°C, L=1.2 mH
Peak IL = -12.5A, VGS = -12V
 I SD ≤ -12.5A, di/dt ≤ -320A/µs,
VDD ≤ -100V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
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Data and specifications subject to change without notice. 02/2006
8
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