PD-97198B 2N7598U3 IRHNJ67C30 600V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) TECHNOLOGY Product Summary Part Number IRHNJ67C30 IRHNJ63C30 Radiation Level RDS(on) 100K Rads (Si) 2.9Ω 300K Rads (Si) 2.9Ω ID 3.4A 3.4A SMD-0.5 International Rectifier’s R6TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers. These devices retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters. Features: Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Ceramic Package Light Weight n ESD Rating: Class 2 per MIL-STD-750, Method 1020 n n n n n n n n n n Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 3.4 2.2 13.6 75 0.6 ±20 76 3.4 7.5 9.2 -55 to 150 300 (for 5s) 1.0 (Typical) A W W/°C V mJ A mJ V/ns °C g For footnotes refer to the last page www.irf.com 1 08/05/15 IRHNJ67C30, 2N7598U3 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS /∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current Typ Max Units Test Conditions 600 — — V — 0.47 — V/°C — — 2.9 Ω VGS = 12V, ID = 2.2A 2.0 3.4 — — — — — — 4.0 — 10 25 V S VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 2.2A VDS = 480V ,VGS = 0V VDS = 480V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 3.4A VDS = 300V µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 35 12 15 18 12 36 17 — C iss C oss C rss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Internal Gate Resistance — — — — 1222 80 1.9 1.5 — — — — nA nC ns nH VGS = 0V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VDD = 300V, ID = 3.4A, VGS = 12V, RG = 7.5Ω Measured from the center of drain pad to center of source pad pF VGS = 0V, VDS = 25V f = 1.0MHz Ω f = 1.0MHz, open drain Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 3.4 13.6 1.2 741 2.1 Test Conditions A V ns µC Tj = 25°C, IS = 3.4A, VGS = 0V Tj = 25°C, IF = 3.4A, di/dt ≤ 100A/µs VDD ≤ 50V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC Junction-to-Case Min Typ Max Units — — 1.67 Test Conditions °C/W Note: Corresponding Spice and Saber models are available on International Rectifier Web site. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNJ67C30, 2N7598U3 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter Up to 300K Rads (Si) BVDSS VGS(th) IGSS IGSS IDSS RDS(on) Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) VSD Diode Forward Voltage 1 Units Test Conditions Min Max 600 2.0 — — — — 4.0 100 -100 10 nA µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 480V, VGS= 0V — 2.9 Ω VGS = 12V, ID = 2.2A — 1.2 V VGS = 0V, ID = 3.4A V 1. Part numbers IRHNJ67C30 and IRHNJ63C30 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Typical Single Event Effect Safe Operating Area Ion LET Energy Range (MeV/(mg/cm2)) (MeV) (µm) VDS (V) @VGS = 0V @VGS = -4V @VGS = -12V @VGS = - 20V Kr 32.4 679 83.3 600 600 600 600 Xe 56.2 1060 83.5 600 600 600 - Au 89.5 1555 84 600 600 - - 800 VDS 600 Kr 400 Xe 200 Au 0 0 -5 -10 -15 -20 VGS Fig a. Typical Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNJ67C30, 2N7598U3 Pre-Irradiation 100 VGS TOP 15V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 60µs PULSE WIDTH Tj = 25°C 10 0.1 1 60µs PULSE WIDTH Tj = 150°C 1 10 0.1 100 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.5 T J = 150°C 10 T J = 25°C 1 VDS = 50V 60µs PULSE WIDTH 15 0.1 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 4.5V 0.1 0.1 ID = 3.4A 2.0 1.5 1.0 0.5 VGS = 12V 0.0 4 5 6 7 8 9 10 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 VGS 15V 12V 10V 8.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation 2000 20 VGS = 0V, f = 1 MHz C iss = C gs + Cgd, C ds SHORTED C rss = C gd ID = 3.4A VGS, Gate-to-Source Voltage (V) 1600 C, Capacitance (pF) IRHNJ67C30, 2N7598U3 C oss = Cds + Cgd Ciss 1200 800 400 16 12 8 4 FOR TEST CIRCUIT SEE FIGURE 13 Coss Crss 0 1 10 0 100 0 4 VDS, Drain-to-Source Voltage (V) 8 12 16 20 24 28 32 36 40 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 ID, Drain-to-Source Current (A) 100 ISD, Reverse Drain Current (A) VDS = 480V VDS = 300V VDS = 120V 10 T J = 150°C 1 T J = 25°C 0.1 OPERATION IN THIS AREA LIMITED BY R DS(on) 10 100µs 1 0.01 0.2 0.4 0.6 0.8 1.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.2 10ms 0.1 VGS = 0V 0.01 1ms Tc = 25°C Tj = 150°C Single Pulse 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNJ67C30, 2N7598U3 Pre-Irradiation RD VDS 4 VGS ID, Drain Current (A) 3 VDD D.U.T. RG + 2 V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 1 Fig 10a. Switching Time Test Circuit 0 25 50 75 100 125 VDS 150 90% T C , Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response ( Z thJC ) 10 1 P DM D = 0.50 0.20 t1 0.10 0.1 t2 SINGLE PULSE ( THERMAL RESPONSE ) 0.05 0.02 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.01 1E-005 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNJ67C30, 2N7598U3 DRIVER L VDS D.U.T. RG VGS 20V + V - DD IAS tp 0.01Ω . A Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS EAS , Single Pulse Avalanche Energy (mJ) 160 15V ID 1.5A 2.2A 3.4A TOP 120 BOTTOM 80 40 0 25 tp 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 12V 50KΩ 12V QGS .2µF .3µF QGD VG D.U.T. + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNJ67C30, 2N7598U3 Pre-Irradiation Footnotes: Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 50V, starting TJ = 25°C, L = 13mH Peak IL = 3.4A, VGS = 12V ISD ≤ 3.4A, di/dt ≤ 628A/µs, VDD ≤ 600V, TJ ≤ 150°C Pulse width ≤ 300 µs; Duty Cycle ≤ 2% Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 480 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-0.5 PAD ASSIGNMENTS 1 = DRAIN 2 = GATE 3 = SOURCE IR WORLD HEADQUARTERS: 101 N, Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/2015 8 www.irf.com