IRF IRHNJ7430SE Simple drive requirement Datasheet

PD-93830C
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRHNJ7430SE
JANSR2N7466U3
500V, N-CHANNEL
REF: MIL-PRF-19500/676
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number
IRHNJ7430SE
Radiation Level
100K Rads (Si)
RDS(on)
1.77Ω
ID
QPL Part Number
4.4A JANSR2N7466U3
SMD-0.5
International Rectifier’s RADHardTM HEXFET® MOSFET
technology provides high performance power MOSFETs
for space applications. This technology has over a
decade of proven performance and reliability in satellite
applications. These devices have been characterized
for both Total Dose and Single Event Effects (SEE). The
combination of low RDS(on) and low gate charge reduces
the power losses in switching applications such as DC to
DC converters and motor control. These devices retain
all of the well established advantages of MOSFETs such
as voltage control, fast switching, ease of paralleling and
temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
4.4
2.8
17.6
75
0.6
±20
150
4.4
7.5
2.5
-55 to 150
300 (for 5s)
1.0 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
07/25/12
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
500
—
—
V
—
0.61
—
V/°C
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
—
—
1.77
Ω
VGS = 12V, ID = 2.8A
2.5
0.4
—
—
—
—
—
—
4.5
—
50
250
V
S
VDS = VGS, ID = 1.0mA
VDS >= 15V, IDS = 2.8A Ã
VDS = 400V ,VGS = 0V
VDS = 400V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 4.4A
VDS = 250V
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
µA
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
30
8.0
18
25
65
60
63
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
570
150
50
—
—
—
nA
nC
Test Conditions
Ã
VDD = 250V, ID = 4.4A,
VGS =12V, RG = 7.5Ω
ns
nH
Measured from the center of
drain pad to center of source pad
pF
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
—
—
—
—
4.4
17.6
A
VSD
trr
Q RR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.2
400
3.8
V
ns
µC
ton
Forward Turn-On Time
Test Conditions
Tj = 25°C, IS = 4.4A, VGS = 0V Ã
Tj = 25°C, IF = 4.4A, di/dt ≤ 100A/µs
VDD ≤ 50V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction-to-Case
Junction-to-PC board
Min Typ Max
—
—
—
6.9
1.67
—
Units
°C/W
Test Conditions
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNJ7430SE, JANSR2N7466U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads (Si)
Min
Max
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (SMD-0.5)
Diode Forward Voltage
Units
Test Conditions
500
2.0
—
—
—
—
4.5
100
-100
50
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS = 400V, VGS = 0V
—
1.77
Ω
VGS = 12V, ID = 2.8A
—
1.77
Ω
VGS = 12V, ID = 2.8A
—
1.2
V
VGS = 0V, ID = 4.4A
„
V
nA
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
(MeV/(mg/cm2))
28
36.8
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
43
375
375
375
375
375
39
350
350
350
325
300
Energy
(MeV)
285
305
400
VDS
300
Cu
200
Br
100
0
0
-5
-10
-15
-20
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ7430SE, JANSR2N7466U3
100
Pre-Irradiation
100
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
10
1
0.1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.01
0.1
1
10
10
1
5.0V
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
3.0
10
TJ = 150 ° C
1
TJ = 25 ° C
0.1
V DS =15
50V
20µs PULSE WIDTH
9
11
13
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
100
7
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
5
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
0.01
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
4.5A
ID = 4.4A
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
Pre-Irradiation
20
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1200
IRHNJ7430SE, JANSR2N7466U3
900
Ciss
600
300
Coss
Crss
0
1
10
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
8
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100
TJ = 150 ° C
10
1
TJ = 25 ° C
V GS = 0 V
0.8
1.2
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
24
32
40
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
VSD ,Source-to-Drain Voltage (V)
16
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
0.1
0.4
VDS = 400V
VDS = 250V
VDS = 100V
16
0
100
ID = 4.4A
4.5A
10
100µs
1
1ms
0.1
0.01
1.6
OPERATION IN THIS AREA LIMITED
BY R DS(on)
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
10
DC
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
5.0
RD
VDS
VGS
I D , Drain Current (A)
4.0
D.U.T.
RG
3.0
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
2.0
Fig 10a. Switching Time Test Circuit
1.0
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
P DM
0.05
0.1
0.02
0.01
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNJ7430SE, JANSR2N7466U3
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
250
TOP
200
BOTTOM
ID
2.0A
2.8A
4.4A
150
100
50
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
www.irf.com
12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHNJ7430SE, JANSR2N7466U3
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L=15.5 mH
Peak IL = 4.4A, VGS = 12V
 ISD ≤ 4.4A, di/dt ≤ 260A/µs,
VDD ≤ 500V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
400 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 07/2012
8
www.irf.com