IRF IRHQ57214SE Simple drive requirement Datasheet

PD-93881D
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (LCC-28)
IRHQ57214SE
250V, QUAD N-CHANNEL
5
TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHQ57214SE 100K Rads (Si)
RDS(on)
1.5Ω
ID
1.9A
LCC-28
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects(SEE) with useful
performance up to an LET of 80 (MeV/(mg/cm2)). The
combination of low R DS(on) and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control.
These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature
stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
Light Weight
Absolute Maximum Ratings (Per Die)
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
Units
1.9
1.2
7.6
12
0.1
±20
30
1.9
1.2
5.0
-55 to 150
300 (for 5s)
0.89 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
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1
12/20/11
IRHQ57214SE
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) (Per Die)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
250
—
—
V
—
0.28
—
V/°C
—
—
2.5
0.5
—
—
—
—
—
—
—
—
1.5
1.8
4.5
—
10
25
∆BVDSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Typ Max Units
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.1
100
-100
13
3.9
5.4
25
100
35
35
—
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
338
53
2.6
—
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
nC
VGS = 12V, ID = 1.2A Ã
VGS = 12V, ID = 1.9A
VDS = VGS, ID = 1.0mA
VDS >=15V, IDS = 1.2A Ã
VDS= 200V ,VGS=0V
VDS = 200V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 1.9A
VDS = 125V
ns
VDD = 125V, ID = 1.9A
VGS =12V, RG = 7.5Ω
Ω
V
S
µA
nA
nH
pF
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.9
7.6
1.5
300
771
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.9A, VGS = 0V Ã
Tj = 25°C, IF = 1.9A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
10.4
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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Radiation Characteristics
IRHQ57214SE
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ (Per Die)
Parameter
BV DSS
VGS(th)
IGSS
IGSS
I DSS
RDS(on)
RDS(on)
VSD
100K Rads (Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source „
On-State Resistance (LCC-28)
Diode Forward Voltage „
Units
Test Conditions
Min
Max
250
2.0
—
—
—
—
4.5
100
-100
10
nA
µA
VGS = 0V, ID = 1.0mA
VGS = VDS , ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 200V, VGS=0V
—
1.45
Ω
VGS = 12V, ID = 1.2A
—
1.5
Ω
VGS = 12V, ID = 1.2A
—
1.2
V
VGS = 0V, ID = 1.9A
V
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion
Br
I
Au
LET
MeV/(mg/cm2))
36.7
59.8
82.3
VDS (V)
Range
(µm) @VGS=0V @VGS=-5V @VGS=-10V @V GS=-15V @VGS=-20V
39.5
250
250
250
250
250
32.5
250
250
250
250
240
28.4
250
250
225
175
50
Energy
(MeV)
309
341
350
300
250
VDS
200
Br
I
Au
150
100
50
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHQ57214SE
10
Pre-Irradiation
10
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
I D , Drain-to-Source Current (A)
Drain-to-SourceCurrent
Current(A)
(A)
I D , I Drain-to-Source
D’
1
5.0V
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
5.0V
1
2.5
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 150 ° C
TJ = 25 ° C
1
V DS = 15
50V
20µs PULSE WIDTH
8.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
10
100
Fig 2. Typical Output Characteristics
10
7.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
6.0
20µs PULSE WIDTH
TJ = 150 °C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
0.1
5.0
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
TOP
ID = 1.9A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
600
20
400
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
500
C, Capacitance (pF)
IRHQ57214SE
Ciss
300
Coss
200
100
0
Crss
1
10
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
4
100
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
10
TJ = 150 ° C
1
TJ = 25 ° C
V GS = 0 V
0.9
1.3
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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12
16
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.6
8
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
0.1
0.2
VDS = 200V
VDS = 125V
VDS = 50V
16
0
100
ID = 1.9A
1.6
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
100µs
1
1ms
0.1
10ms
0.01
0.001
Tc = 25°C
Tj = 150°C
Single Pulse
1
DC
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHQ57214SE
Pre-Irradiation
2.0
RD
VDS
VGS
I D , Drain Current (A)
1.6
D.U.T.
RG
1.2
+
-V DD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
0.8
Fig 10a. Switching Time Test Circuit
0.4
VDS
90%
0.0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
100
10
D = 0.50
0.20
PDM
0.10
1
t1
0.05
0.02
0.01
0.1
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
15V
L
VDS
D.U.T.
RG
VGS
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
EAS , Single Pulse Avalanche Energy (mJ)
IRHQ57214SE
80
TOP
BOTTOM
60
ID
0.8A
1.2A
1.9A
40
20
0
25
50
75
100
125
Starting TJ , Junction Temperature ( °C)
150
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12 V
QGS
.3µF
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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12V
.2µF
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHQ57214SE
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 50V, starting TJ = 25°C, L= 16.4 mH
Peak IL = 1.9A, VGS = 12V
 ISD ≤ 1.9A, di/dt ≤ 336A/µs,
VDD ≤ 250V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
200 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — LCC-28
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Data and specifications subject to change without notice. 12/2011
8
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