IRF IRHY93130CM Radiation hardened power mosfet thru-hole (to-257aa) Datasheet

PD - 91400C
IRHY9130CM
JANSR2N7382
100V, P-CHANNEL
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-257AA)
REF: MIL-PRF-19500/615
®
RAD Hard HEXFET TECHNOLOGY
™
Product Summary
Part Number Radiation Level
IRHY9130CM 100K Rads (Si)
IRHY93130CM 300K Rads (Si)
RDS(on)
0.30Ω
0.30Ω
ID
-11A
-11A
QPL Part Number
JANSR2N7382
JANSF2N7382
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-257AA
Features:
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = -12V, TC = 25°C
ID @ VGS = -12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
-11
-7.0
-44
75
0.6
±20
150
-11
7.5
-16
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 (0.063 in (1.6mm)from case for 10s)
4.3 (Typical)
C
g
For footnotes refer to the last page
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1
06/13/02
IRHY9130CM, JANSR2N7382
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Min
Typ Max Units
Test Conditions
—
—
V
VGS =0 V, ID = -1.0mA
-0.11
—
V/°C
Reference to 25°C, ID = -1.0mA
—
—
—
—
—
—
0.30
0.35
-4.0
—
-25
-250
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
-100
100
45
10
25
30
50
70
70
—
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1200
310
80
—
—
—
VGS = -12V, ID = - 7.0A
„
VGS = -12V, ID = - 11A
VDS = VGS, ID = -1.0mA
VDS > -15V, IDS = - 7.0A „
VDS= - 80V,VGS=0V
VDS = - 80V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -12V, ID = - 11A
VDS = - 50V
Ω
V
S( )
Ω
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
-100
∆BV DSS/∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source
—
On-State Resistance
—
VGS(th)
Gate Threshold Voltage
-2.0
gfs
Forward Transconductance
2.5
IDSS
Zero Gate Voltage Drain Current
—
—
µA
nA
nC
VDD = - 50V, ID = - 11A,
RG = 7.5Ω
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
pF
VGS = 0V, VDS = - 25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-11
-44
-3.0
250
1.0
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = - 11A, VGS = 0V ➃
Tj = 25°C, IF = - 11A, di/dt ≤ -100A/µs
VDD ≤ - 25V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
1.67
80
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRHY9130CM, JANSR2N7382
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source ➃
On-State Resistance (TO-3)
Static Drain-to-Source ➃
On-State Resistance (TO-257AA)
Diode Forward Voltage ➃
Units
Test Conditions
V
µA
Ω
VGS = 0V, ID = -1.0mA
VGS = VDS, ID = -1.0mA
VGS = -20V
VGS = 20 V
VDS=-80V, VGS =0V
VGS = -12V, ID =-7.0A
0.30
Ω
VGS = -12V, ID =-7.0A
-3.0
V
VGS = 0V, IS = -11A
300K Rads (Si)2
Min
Max
Min
Max
-100
- 2.0
—
—
—
—
—
- 4.0
-100
100
-25
0.30
-100
-2.0
—
—
—
—
—
-5.0
-100
100
-25
0.30
—
0.30
—
—
-3.0
—
nA
1. Part number IRHY9130CM (JANSR2N7382)
2. Part number IRHY93130CM (JANSF2N7382)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
I
LET
Energy
MeV/(mg/cm2)) (MeV)
28
285
36.8
305
59.8
343
Range
(µm)
32.6
39
43
VDS (V)
@VGS=0V
-100
-100
-60
@VGS=5V
@VGS=10V
-100
-100
—
-100
-70
—
@VGS=15V
@VGS=20V
-70
-50
—
-60
-40
—
-120
-100
VDS
-80
Cu
Br
I
-60
-40
-20
0
0
5
10
15
20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRHY9130CM, JANSR2N7382
100
Pre-Irradiation
100
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
10
-5.0V
20µs PULSE WIDTH
T = 25 C
°
J
1
1
10
10
-5.0V
TJ = 150 ° C
10
V DS = -50V
20µs PULSE WIDTH
10
11
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
12
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-I D , Drain-to-Source Current (A)
TJ = 25 ° C
9
100
Fig 2. Typical Output Characteristics
2.5
7
°
10
-VDS , Drain-to-Source Voltage (V)
100
6
J
1
100
Fig 1. Typical Output Characteristics
1
20µs PULSE WIDTH
T = 150 C
1
-VDS , Drain-to-Source Voltage (V)
5
VGS
-15V
-12V
-10V
-9.0V
-8.0V
-7.0V
-6.0V
BOTTOM -5.0V
TOP
TOP
ID = -11A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = -12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
1500
Ciss
1000
C
oss
500
C
rss
20
-VGS , Gate-to-Source Voltage (V)
2000
C, Capacitance (pF)
IRHY9130CM, JANSR2N7382
ID = -11A
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
1
10
0
100
10
20
30
40
50
60
QG , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
TJ = 150 ° C
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
VDS =-80V
VDS =-50V
VDS =-20V
10
TJ = 25 ° C
1
V GS = 0 V
0.1
0.0
1.0
2.0
3.0
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4.0
100us
10
1ms
1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
10ms
10
100
1000
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRHY9130CM, JANSR2N7382
Pre-Irradiation
12
RD
V DS
VGS
10
D.U.T.
-ID , Drain Current (A)
RG
+
8
V DD
-12V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
td(on)
2
tr
t d(off)
tf
VGS
10%
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
90%
VDS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.01
0.00001
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRHY9130CM, JANSR2N7382
L
VDS
D .U .T
RG
IA S
-20V
-12V
tp
VD D
A
D R IV E R
0.0 1Ω
15V
Fig 12a. Unclamped Inductive Test Circuit
IAS
EAS , Single Pulse Avalanche Energy (mJ)
400
ID
-4.9A
-7.0A
BOTTOM -11A
TOP
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
tp
V (BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-12V
12V
.2µF
.3µF
-12V
QGS
QGD
D.U.T.
+VDS
VGS
VG
-3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRHY9130CM, JANSR2N7382
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = -25V, starting TJ = 25°C, L= 2.4mH
Peak IL = -11A, VGS = -12V
➂ ISD ≤ -11A, di/dt ≤ -440A/µs,
VDD ≤ -100V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with V GS Bias.
-12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V DS Bias.
-80 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-257AA
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 06/02
8
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