Data SheetNo. PD60188-B IRIS4011(K) INTEGRATED SWITCHER Features • Primary current mode control, and secondary Packages voltage mode control • Vcc Over-voltage protection (latched) • Over-current & over-temperature protection • Quasi resonant, variable frequency operation • 5 pin TO-220 and TO-262 • 3.9Ω Rds(on) max/ 650V MOSFET • Fully Characterized Avalanche Energy IRIS4011 5 Lead TO-220 IRIS4011K 5 Lead TO-262 Description The IRIS4011(K) is a dual mode voltage and current controller combined with a MOSFET in a single package. The IRIS4011(K) is designed for use in universal and single input AC/DC and DC/DC switching power supplies and is capable of powers up to 60W for a universal line input. The device can operate in either a quasi-resonant or Pulse Ratio Control (PRC) mode, and thereby variable frequency operation. Typical Connection Diagram Vin (AC/ DC) Vout (DC) 3 Drain Vcc 4 IRIS4011(K) FB Source 1 5 Gnd 2 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our DesignTips and Application Notes (AN1018a, AN1024a, AN1025) for proper circuit board layout. www.irf.com 1 IRIS4011(K) Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Symbol Definition Terminals Max. Ratings Units Note IDpeak Peak drain current 3-1 6.8 IDmax Maximum switching current 3-1 2.7 A V2-3 = 0.78V Tc=25oC EAS Single pulse avalanche energy 3-1 92 mJ Vdd=99V,L=20mH, G=12V, Ipk=2.8A VCC Power supply voltage 4-3 35 VTH OCP/FB terminal voltage 5-2 6 P D1 Power dissipation for MOSFET 3-1 Single pulse V 89 1.4 P D2 Power dissipation for control part (MIC) 4-2 0.8 RthJC Thermal resistance, junction to case — 1.4 TJ Junction temperature — -40-125 TS Storage temperature — -40-125 Tf Internal frame temperature in operation — -20-125 TOP Ambient operating temperature — -20-125 TL Lead temp. (soldering, 10 seconds) — 300 With infinite heatsink W Without heatsink Specified by VIN x IIN °C/W °C Refer to recommended operating temperature Recommended Operating Conditions Time for input of quasi resonant signals. For the Quasi resonant signal inputted to the VDCP/FB terminal at the time of quasi resonant operation, the signal should be wider thant Tth(2) 2 VOCP/FB Tth(2) ≥1.0µs Vth(2) www.irf.com IRIS4011(K) Electrical Characteristics (for Control IC) VCC = 18V, (TA = 25°C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions VCCUV+ VCC supply undervoltage positive going threshold 14.4 16 17.6 VCCUV- VCC supply undervoltage negative going threshold 9 10 11 IQCCUV UVLO mode quiescent current — — 100 µA Quiescent operating VCC supply current — — 30 mA Maximum OFF time 40 — 60 Minimum input pulse width for quasi resonant signals — — 1.0 Minimum OFF time — — 1.5 IQCC TOFF/(MAX) TTH(2) TOFF/(MIN) VTH(1) OCP/FB terminal threshold voltage 1 0.68 0.73 0.78 VTH(2) OCP/FB terminal threshold voltage 2 1.3 1.45 1.6 OCP/FB terminal sink current 1.1 1.35 1.7 VCC overvoltage protection limit IOCP/FB VCC(OVP) ICC(LA) VCC(LaOFF) TJ(TSD) V µsec V mA 20.5 22.5 24.5 V Latch circuit holding current — — 400 µA Latch circuit reset voltage 6.6 — 8.4 V — oC Thermal shutdown activation temperature 140 — VCC < VCCUV+ Electrical Characteristics (for MOSFET) (TA = 25°C) unless otherwise specified. Symbol Definition Min. Typ. Max. Units Test Conditions VDSS Drain-to-source breakdown voltage 650 — — V IDSS Drain leakage current — — 300 µA Vds=520V, VCC=0V Tj =125oC RDS(ON) tr THj-C On-resistance — — 3.9 Ω Rise time (10% to 90%) Thermal resistance — — — — 250 1.4 ns oC/W www.irf.com V3-1=10V, ID=0.9A Between junction and case 3 IRIS4011(K) Block Diagram 4 Vcc 3 START O.V.P D LATCH DRIVE REG. 1 OSCILLATOR T.S.D S Vth(1) + 5 Comp.1 - OCP/ FB Vth(2) + Comp.2 2 Ground Lead Assignments 1 2 3 4 Pin # S y m b o l Description 1 S 2 Ground 3 D MOSFET Drain terminal 4 Vcc Control circuit supply voltage 5 OCP/FB MOSFET Source terminal Ground terminal 5 Overcurrent detection, and Voltage mode control feedback signal Other Functions O.V.P. – Overvoltage Protection Circuit T.S.D. – Thermal Shutdown Circuit 4 www.irf.com IRIS4011(K) Case outline 5-Lead TO-220 www.irf.com 01-6020 00 01-3042 01 (TS-001) 5 IRIS4011(K) Case outline 4.83 [.190] 4.06 [.160] 10.29 [.405] 9.65 [.380] 1.40 [.055] MAX. B 1.32 [.052] 1.22 [.048] 6.22[.245] MIN 6 9.65 [.380] 8.64 [.340] 6 8.00[.315] MAX 1 2 3 4 5 C 12.70 [.500] 14.73 [.580] 5X 1.01[.040] 0.51[.020] 5X 0.63 [.025] 0.31 [.012] 1.70 [.067] 4X 0.25 [.010] A B 2.92 [.115] 2.16 [.085] 5-Lead TO-262 IR WORLD HEADQUARTERS: 233 Kansas Street, El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 10/162001 6 www.irf.com