IRF IRKH41/12AS90 Thyristor/ diode and thyristor/ thyristor Datasheet

Bulletin I27131 rev. G 10/02
IRK.41, .56 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
45 A
60 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage of
Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IRK.41
IRK.56
Units
45
60
A
IO(RMS) (*)
100
135
A
ITSM @ 50Hz
850
1310
A
IFSM @ 60Hz
890
1370
A
I 2t
@ 50Hz
3.61
8.50
KA 2s
@ 60Hz
3.30
7.82
KA 2s
36.1
85.0
KA 2√s
IT(AV) or I F(AV)
@ 85°C
I2√t
VRRM range
400 to 1600
V
TSTG
- 40 to 125
o
TJ
- 40 to125
o
C
C
(*) As AC switch.
www.irf.com
1
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
-
IRK.41/ .56
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
V
V
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IT(AV)
IRK.41
IRK.56
Units
Conditions
Max. average on-state
current (Thyristors)
45
60
180o conduction, half sine wave,
Maximum average
45
60
TC = 85oC
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
100
135
ITSM
Max. peak, one cycle
850
1310
t=10ms No voltage
or
non-repetitive on-state
890
1370
t=8.3ms reapplied
IFSM
or forward current
IF(AV)
forward current (Diodes)
I2t
I2√t
Max. I2t for fusing
Max. I2√t for fusing (1)
VT(TO) Max. value of threshold
voltage (2)
or
715
1100
t=10ms 100% VRRM
750
1150
t=8.3ms reapplied
940
1450
t=10ms TJ = 25oC,
I(RMS)
Sinusoidal
half wave,
Initial TJ = TJ max.
985
1520
t=8.3ms no voltage reapplied
3.61
8.56
t=10ms No voltage
3.30
7.82
t=8.3ms reapplied
2.56
6.05
t=10ms 100% VRRM
2.33
5.53
4.42
10.05
4.03
9.60
36.1
85.6
0.88
0.85
0.91
0.88
rt
Max. value of on-state
5.90
3.53
5.74
3.41
VTM
slope resistance (2)
Max. peak on-state or
VFM
forward voltage
1.81
1.54
di/dt
Max. non-repetitive rate
of rise of turned on
150
KA2s
Initial TJ = TJ max.
t=8.3ms reapplied
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
KA2√s
V
mΩ
V
A/µs
t=0.1 to 10ms, no voltage reapplied
Low level (3)
TJ = TJ max
High level (4)
Low level (3)
TJ = TJ max
High level (4)
ITM = π x IT(AV)
TJ = 25°C
IFM = π x IF(AV)
TJ = 25oC, from 0.67 VDRM,
ITM =π x IT(AV), I = 500mA,
g
tr < 0.5 µs, tp > 6 µs
current
IH
Max. holding current
200
IL
Max. latching current
400
(1) I2t for time tx = I2√t x √tx
I(RMS)
A
TJ = 25oC, anode supply = 6V,
mA
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V,resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x IAV < I < π x IAV
(4) I > π x IAV
2
www.irf.com
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Triggering
Parameters
PGM
IRK.41
Max. peak gate power
IRK.56
10
10
PG(AV) Max. average gate power
2.5
2.5
IGM
2.5
2.5
Max. peak gate current
-VGM Max. peak negative
TJ = - 40°C
V
TJ = 25°C
TJ = 125°C
1.7
270
150
Max. gate current
TJ = - 40°C
TJ = 25°C
mA
80
Max. gate voltage
that will not trigger
IGD
A
2.5
required to trigger
VGD
W
4.0
Max. gate voltage
required to trigger
IGT
Conditions
10
gate voltage
VGT
Units
Max. gate current
that will not trigger
TJ = 125°C
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
0.25
V
TJ = 125oC,
rated VDRM applied
6
mA
TJ = 125oC,
rated VDRM applied
Blocking
Parameters
IRK.41
IRRM
Max. peak reverse and
IDRM
off-state leakage current
IRK.56
Units
15
Conditions
TJ = 125 oC, gate open circuit
mA
at VRRM, VDRM
2500 (1 min)
VINS
50 Hz, circuit to base, all terminals
RMS isolation voltage
V
3500 (1 sec)
dv/dt Max. critical rate of rise
of off-state voltage (5)
shorted
500
TJ = 125oC, linear to 0.67 VDRM,
gate open circuit
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT41/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.41
IRK.56
TJ
Junction operating
temperature range
- 40 to 125
Tstg
Storage temp. range
- 40 to 125
Units
Conditions
°C
RthJC Max. internal thermal
resistance, junction
0.23
0.20
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance
case to heatsink
T
Mounting surface flat, smooth and greased
0.1
Mounting torque ± 10%
to heatsink
5
busbar
wt
A mounting compound is recommended
and the torque should be rechecked after a
period of 3 hours to allow for the spread of
the compound
Nm
3
Approximate weight
110 (4)
Case style
gr (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.41
IRK.56
www.irf.com
Sine half wave conduction
180o
0.11
0.09
120o
0.13
0.11
90o
0.17
0.13
60o
0.23
0.18
Rect. wave conduction
30o
0.34
0.27
180o
0.09
0.07
120o
0.14
0.11
90o
0.18
0.14
60o
0.23
0.19
30o
0.34
0.28
Units
°C/W
3
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Ordering Information Table
Device Code
IRK
T
56
1
2
3
/
16
A
S90
4
5
6
IRK.57 types
With no auxiliary cathode
1
-
2
-
Module type
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
* * Available with no auxiliary cathode.
To specify change:
41 to 42
56 to 57
e.g. : IRKT57/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
IRKN
IRKL
(1)
~
K2 G2
(7) (6)
G1 K1
(4) (5)
(1)
-
(2)
+
+
(3)
K2 G2
(7) (6)
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
www.irf.com
IRK.41, .56 Series
IRK.41.. Series
R thJC (DC) = 0.46 K/W
120
110
Conduction Angle
100
30°
60°
90°
90
180°
0
10
20
30
40
50
IRK.41.. Series
R thJC (DC) = 0.46 K/W
120
110
Conduction Period
30°
100
60°
90°
120°
90
80
180°
DC
0
20
40
60
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
70
180°
120°
90°
60°
30°
60
50
RMS Limit
40
30
Conduction Angle
20
IRK.41.. Series
Per Junction
T J = 125°C
10
0
130
Fig. 1 - Current Ratings Characteristics
0
10
20
30
40
50
Maximum Average On-state Power Loss (W)
80
120°
Maximum Allowable Case Temperature (°C)
130
80
100
DC
180°
120°
90°
60°
30°
80
60
RMS Limit
40
Conduction Period
IRK.41.. Series
Per Junction
T J = 125°C
20
0
0
20
40
60
80
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
800
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
700
600
500
400
IRK.41.. Series
Per Junction
300
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
www.irf.com
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27131 rev. G 10/02
900
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J= 125°C
No Voltage Reapplied
Rated V RRMReapplied
800
700
600
500
400
IRK.41.. Series
Per Junction
300
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
5
IRK.41, .56 Series
140
R thSA
K/ W
0.3
R
W
5 K/W
0
100
80
Delta
K/W -
60
= 0 .1
40
80
K/
W
3 K/
IRK.41.. Series
Per Module
T J = 125°C
20
K/W
Conduction Angle
0
W
60
2K
/W
0
0. 5
1.5
20
60
K/
80
40
40
W
K/
100
0. 7
180°
120°
90°
60°
30°
120
1
Maximum Total On-state Power Loss (W)
Bulletin I27131 rev. G 10/02
20
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMS Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
W
40
aR
20
el t
-D
0
K/
W
0. 7
K/
W
1K
/W
2 x IRK.41.. Series
Single Phase Bridge
Connected
T J = 125°C
50
K/
W
K/
0.
5
150
100
.1
=0
200
3
A
180°
(Sine)
180°
(Rect)
W
K/
0.
250
0
R t hS
300
2
0.
Maximum Total Power Loss (W)
350
60
80
1.5
K /W
0
100
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
500
=
400
K/
W
350
150
3 x IRK.41.. Series
Three Phase Bridge
Connected
T J = 125°C
100
50
0
20
40
60
80
100
Total Output Current (A)
120
0.7
K/
W
K/ W
1 K/
0
140
W
R
0. 5
200
K/
ta
el
0.
3
120°
(Rect)
250
-D
300
0
W
K/
0.1
2
0.
Maximum Total Power Loss (W)
SA
R th
450
W
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
6
www.irf.com
IRK.41, .56 Series
IRK.56.. Series
R
(DC) = 0.40 K/W
thJC
120
110
Conduction Angle
100
90
30°
60°
80
70
0
10
20
30
90°
40
120°
50
180°
60
70
130
IRK.56.. Series
R thJC (DC) = 0.40 K/W
120
110
Conduction Period
100
90
90°
80
30°
70
0
20
60
RMS Limit
50
40
30
Conduction Angle
20
IRK.56.. Series
Per Junction
T J = 125°C
10
0
10
20
30
40
50
60
120
100
100
80
60
RMS Limit
Conduction Period
40
IRK.56.. Series
Per Junction
T J = 125°C
20
0
0
20
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
900
800
700
IRK.56.. Series
Per Junction
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
www.irf.com
60
80
100
Fig. 13 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 125°C
1000
40
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
80
DC
180°
120°
90°
60°
30°
Average On-state Current (A)
500
60
DC
Average On-state Current (A)
70
600
40
180°
Fig. 11 - Current Ratings Characteristics
80
1100
120°
Average On-state Current (A)
180°
120°
90°
60°
30°
1200
60°
Fig. 10 - Current Ratings Characteristics
90
0
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27131 rev. G 10/02
1400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T J = 125°C
No Voltage Reapplied
Rated V RRMReapplied
1200
1000
800
600
IRK.56.. Series
Per Junction
400
0.01
0.1
1
Pulse Train Duration (s)
Fig. 15 - Maximum Non-Repetitive Surge Current
7
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
S
R th
W
K/
A
=0
W
K/
.1
W
K/ K/W
5
0.
e lt
-D
0. 7
120
aR
K/
W
1K
/W
100
80
1.5
K/ W
2 K/
W
Conduction Angle
60
IRK.56.. Series
Per Module
T J = 125°C
40
20
0
2
0.
4
140
0.
160
W
K/
180°
120°
90°
60°
30°
180
3
0.
Maximum Total On-state Power Loss (W)
200
0
20
40
60
80
100
120
4 K/W
140
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMS Output Current (A)
Fig. 16 - On-state Power Loss Characteristics
400
R th
SA
0. 5
0.7
150
2 x IRK.56.. Series
Single Phase Bridge
Connected
T J = 125°C
100
50
0
0
20
40
60
80
/W
R
200
a
elt
250
K/
W
0.
3K
-D
300
W
K/
180°
(Sine)
180°
(Rect)
1
0.
0.
2
350
=
Maximum Total Power Loss (W)
450
100
120
K /W
K/ W
1 K/
W
2 K/W
0
140
Total Output Current (A)
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-state Power Loss Characteristics
SA
R th
500
=
3 x IRK.56.. Series
Three Phase Bridge
Connected
T J = 125°C
100
0
0
20
40
60
W
0.5
K/ W
0.7
K/W
1 K/ W
80 100 120 140 160 180
0
Total Output Current (A)
K/
R
200
0.3
K/
W
ta
el
300
2
-D
120°
(Rect)
W
K/
0.
400
1
0.
Maximum Total Power Loss (W)
600
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
8
www.irf.com
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
1000
Instantaneous On-state Current (A)
Instantaneous On-state Current (A)
1000
100
T J= 25°C
T J= 125°C
10
IRK.41.. Series
Per Junction
1
0
1
2
3
4
5
6
100
TJ = 25°C
TJ = 125°C
10
IRK.56.. Series
Per Junction
1
0.5
7
Instantaneous On-state Voltage (V)
450
400
IRK.41.. Series
IRK.56.. Series
T J = 125 °C
I TM = 200 A
100 A
350
50 A
300
250
20 A
200
10 A
150
100
10
20
30
40
50
60
70
80
90 100
2
2.5
3
3.5
4
4.5
110
I TM = 200 A
100
100 A
90
50 A
80
20 A
70
10 A
60
50
IRK.41.. Series
IRK.56.. Series
T J = 125 °C
40
30
10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Recovery Charge Characteristics
Transient Thermal Impedance Z thJC (K/W)
1.5
Fig. 20 - On-state Voltage Drop Characteristics
Maximum Reverse Recovery Current - Irr (A)
Maximum Reverse Recovery Charge - Qrr (µC)
Fig. 19 - On-state Voltage Drop Characteristics
500
1
Instantaneous On-state Voltage (V)
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R thJC = 0.46 K/W
R thJC = 0.40 K/W
(DC Operation)
IRK.41.. Series
IRK.56.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance ZthJC Characteristics
www.irf.com
9
IRK.41, .56 Series
Bulletin I27131 rev. G 10/02
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM = 100 W, tp = 500 µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
(b)
(a)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4) (3)
(2) (1)
VGD
IGD
0.1
0.001
0.01
IRK.41../.56.. Series
0.1
1
Frequency Limited by PG(AV)
10
100
1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 10/02
10
www.irf.com
Similar pages