Vishay IRKT250-14 Scr/scr and scr/diode (magn-a-pak power modules), 170 a/250 a Datasheet

VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
FEATURES
• High voltage
• Electrically isolated base plate
• 3500 VRMS isolating voltage
• Industrial standard package
• Simplified mechanical designs, rapid assembly
• High surge capability
• Large creepage distances
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
MAGN-A-PAK
• Designed and qualified for industrial level
DESCRIPTION
This new VSK series of MAGN-A-PAK modules uses high
voltage power thyristor/thyristor and thyristor/diode in
seven basic configurations. The semiconductors are
electrically isolated from the metal base, allowing common
heatsinks and compact assemblies to be built. They can be
interconnected to form single phase or three phase bridges
or as AC-switches when modules are connected in
anti-parallel mode. These modules are intended for general
purpose applications such as battery chargers, welders,
motor drives, UPS, etc.
PRODUCT SUMMARY
IT(AV)
170 A/250 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IT(AV)
CHARACTERISTICS
VSK.170..
VSK.250..
85 °C
170
250
377
555
50 Hz
5100
8500
60 Hz
5350
8900
50 Hz
131
361
60 Hz
119
330
1310
3610
IT(RMS)
ITSM
I2t
I2t
VDRM/VRRM
TJ
Document Number: 94417
Revision: 02-Jul-10
Up to 1600
Range
Up to 2000
- 40 to 130
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
UNITS
A
kA2s
kA2s
V
°C
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1
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
VRRM/VDRM, MAXIMUM REPETITIVE
PEAK REVERSE AND OFF-STATE
BLOCKING VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
04
400
500
VSK.170-
VSK.250-
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
04
400
500
08
800
900
10
1000
1100
12
1200
1300
14
1400
1500
16
1600
1700
18
1800
1900
20
2000
2100
IRRM/IDRM
AT 130 °C
MAXIMUM
mA
50
50
60
ON-STATE CONDUCTION
PARAMETER
SYMBOL
Maximum average on-state current
at case temperature
Maximum RMS on-state current
IT(AV)
IT(RMS)
TEST CONDITIONS
ITSM
t = 8.3 ms
t = 10 ms
Maximum
I2t
for fusing
85
85
°C
377
555
No voltage
reapplied
5100
8500
5350
8900
4300
7150
7500
131
361
119
330
92.5
255
84.4
233
t = 0.1 ms to 10 ms, no voltage reapplied
1310
3610
t = 8.3 ms
t = 10 ms
t = 8.3 ms
I2t
A
4500
t = 10 ms
I2t
UNITS
250
As AC switch
t = 8.3 ms
Maximum I2t for fusing
VSK.250
170
180° conduction, half sine wave
t = 10 ms
Maximum peak, one-cycle on-state
non-repetitive, surge current
VSK.170
100 % VRRM
reapplied
No voltage
reapplied
Sinusoidal
half wave,
initial TJ =
TJ maximum
100 % VRRM
reapplied
Low level value or threshold voltage
VT(TO)1
(16.7 % x  x IT(AV) < I <  x IT(AV)),
TJ = TJ maximum
0.89
0.97
High level value of threshold voltage
VT(TO)2
(I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
1.12
1.00
Low level value on-state slope resistance
rt1
(16.7 % x  x IT(AV) < I <  x IT(AV)),
TJ = TJ maximum
1.34
0.60
High level value on-state slope resistance
rt2
(I >  x IT(AV) < I <  x IT(AV)), TJ = TJ maximum
0.96
0.57
ITM =  x IT(AV), TJ = TJ maximum, 180° conduction,
average power = VT(TO) x IT(AV) + rf x (IT(RMS))2
1.60
1.44
Maximum on-state voltage drop
VTM
Maximum holding current
IH
Anode supply = 12 V, initial IT = 30 A, TJ = 25 °C
500
500
Maximum latching current
IL
Anode supply = 12 V, resistive load = 1 ,
gate pulse: 10 V, 100 μs, TJ = 25 °C
1000
1000
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A
kA2s
kA2s
V
m
V
mA
Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
SWITCHING
PARAMETER
SYMBOL
Typical delay time
td
Typical rise time
tr
Typical turn-off time
TEST CONDITIONS
VSK.170
TJ = 25 °C, gate current = 1 A dIg/dt = 1 A/μs
Vd = 0.67 % VDRM
2.0
ITM = 300 A; dI/dt = 15 A/μs; TJ = TJ maximum;
VR = 50 V; dV/dt = 20 V/μs; gate 0 V, 100 
tq
VSK.250
UNITS
1.0
μs
50 to 150
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
UNITS
50
60
mA
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = TJ maximum
RMS insulation voltage
VINS
50 Hz, circuit to base, all terminals shorted, 25 °C, 1 s
3000
V
TJ = TJ maximum, exponential to 67 % rated VDRM
1000
V/μs
Critical rate of rise of off-state voltage
dV/dt
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VSK.170
VSK.250
PGM
tp  5 ms, TJ = TJ maximum
10.0
Maximum average gate power
PG(AV)
f = 50 Hz, TJ = TJ maximum
2.0
Maximum peak gate current
+ IGM
tp  5 ms, TJ = TJ maximum
3.0
Maximum peak negative gate voltage
- VGT
tp  5 ms, TJ = TJ maximum
5.0
TJ = - 40 °C
4.0
Maximum peak gate power
Maximum required DC gate voltage to trigger
Maximum required DC gate current to trigger
VGT
IGT
TJ = 25 °C
Anode supply = 12 V,
resistive load; Ra = 1 
TJ = TJ maximum
2.0
350
TJ = 25 °C
W
A
V
3.0
TJ = - 40 °C
Anode supply = 12 V,
resistive load; Ra = 1 
mA
200
TJ = TJ maximum
100
UNITS
Maximum gate voltage that will not trigger
VGD
TJ = TJ maximum, rated VDRM applied
0.25
V
Maximum gate current that willnot trigger
IGD
TJ = TJ maximum, rated VDRM applied
10.0
mA
Maximum rate of rise of turned-on current
dI/dt
TJ = TJ maximum, ITM = 400 A,
rated VDRM applied
500
A/μs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Junction operating and storage
temperature range
TEST CONDITIONS
VSK.170
TJ, TStg
VSK.250
- 40 to 130
°C
Maximum thermal resistance,
junction to case per junction
RthJC
DC operation
0.17
0.125
Typical thermal resistance,
case to heatsink per module
RthCS
Mounting surface flat, smooth and greased
0.02
0.02
K/W
MAP to heatsink
Mounting torque ± 10 %
busbar to MAP
A mounting compound is recommended
and the torque should be rechecked after
a period of about 3 hours to allow for the
spread of the compound.
Approximate weight
Case style
Document Number: 94417
Revision: 02-Jul-10
UNITS
4 to 6
Nm
500
g
17.8
oz.
MAGN-A-PAK
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VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
R CONDUCTION PER JUNCTION
SINUSOIDAL CONDUCTION AT TJ MAXIMUM
RECTANGULAR CONDUCTION AT TJ MAXIMUM
180°
120°
90°
60°
30°
180°
120°
90°
60°
30°
VSK.170-
0.009
0.010
0.010
0.020
0.032
0.007
0.011
0.015
0.020
0.033
VSK.250-
0.009
0.010
0.014
0.020
0.032
0.007
0.011
0.015
0.020
0.033
DEVICES
UNITS
K/W
Maximum Allowable Case Temperature (°C)
130
VSK.170.. Series
RthJC (DC) = 0.17 K/W
120
110
Conduction Angle
100
90
30°
80
60°
90°
120°
70
180°
60
0
40
80
120
160
200
Maximum Average On-state Power Loss (W)
Note
• Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
300
180°
120°
90°
60°
30°
250
200
RMS Limit
150
100
Conduction Angle
50
VSK.170.. Series
Per Junction
TJ = 125°C
0
0
Average On-state Current (A)
130
VSK.170.. Series
R thJC (DC) = 0.17 K/W
110
Conduction Period
100
90
30°
60°
90°
120°
80
70
180°
DC
60
0
50
100
150
200
250
300
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
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80
120
160
200
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Ratings Characteristics
120
40
Average On-state Current (A)
350
DC
180°
120°
90°
60°
30°
300
250
200
RMS Limit
150
Conduction Period
100
VSK.170.. Series
Per Junction
TJ = 125°C
50
0
0
50
100
150
200
250
300
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
5000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 130°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
4500
4000
3500
3000
2500
VSK.170.. Series
Per Junction
2000
1
10
5000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRM Reapplied
4500
4000
3500
3000
2500
VSK.170.. Series
Per Junction
2000
0.01
100
0.1
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
400
=0
W
K/
W
K/
A
R th S
8
0. 0
K/
W
.04
K/ W
-D
0.3
5
K/W
e lt
250
K/
W
K/
W
2
0.
3
0.
2
0.1
300
0.
25
W
K/
180°
120°
90°
60°
30°
350
16
0.
aR
Maximum Total On-state Power Loss (W)
1
Pulse Train Duration (s)
Number Of Equal Amplitude Half Cycle Current Pulses (N)
200 Conduction Angle
150
100
VSK.170.. Series
Per Module
TJ = 130°C
50
0
0
50
100 150 200 250 300 350 400
0
Total RMS Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 7 - On-State Power Loss Characteristics
-D
e lt
a
R
100
K/
W
K/ W
0.35
2 x VSK.170.. Series
Single Phase Bridge
Connected
TJ = 130°C
200
2K
/W
0. 2
5K
/W
400
300
W
K/
0 .2
. 02
=0
500
A
600
0. 1
6
K/
W
W
K/
0.1
180°
(Sine)
180°
(Rect)
K/
W
W
K/
700
0.
08
04
0.
1
800
S
R th
0.
900
06
0.
Maximum Total Power Loss (W)
1000
K/ W
0
0
50
100
150
200
250
Total Output Current (A)
300
0
350
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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5
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
3 x VSK.170.. Series
Three Phase Bridge
Connected
TJ = 130°C
K/
W
0. 1
2K
/W
0. 1 6
K/ W
0.25
K/ W
aR
600
200
el t
-D
0. 1
800
400
8K
/W
W
K/
120°
(Rect)
K/
W
.01
0.0
1000
=0
SA
R th
1200
W
K/
0.
05
1400
03
0.
Maximum Total Power Loss (W)
1600
0
0
100
200
300
400
Total Output Current (A)
500
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
130
VSK.250.. Series
RthJC(DC) = 0.125 K/W
120
110
Conduction Angle
100
90
30°
60°
80
90°
120°
70
180°
60
0
50
100
150
200
250
300
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Fig. 9 - On-State Power Loss Characteristics
350
180°
120°
90°
60°
30°
300
250
200
RMS Limit
150
Conduction Angle
100
VSK.250.. Series
Per Junction
TJ = 130°C
50
0
0
Maximum Allowable Case Temperature (°C)
VSK.250.. Series
RthJC (DC) = 0.125 K/W
120
110
Conduction Period
100
90
30°
60°
90°
80
120°
180°
70
DC
60
0
100
200
300
400
500
Average On-state Current (A)
Fig. 11 - Current Ratings Characteristics
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100
150
200
250
Fig. 12 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
Fig. 10 - Current Ratings Characteristics
130
50
Average On-state Current (A)
Average On-state Current (A)
500
DC
180°
120°
90°
60°
30°
450
400
350
300
250
200
RMS Limit
150
Conduction Period
100
VSK.250.. Series
Per Junction
TJ = 130°C
50
0
0
50
100 150 200 250 300 350 400
Average On-state Current (A)
Fig. 13 - On-State Power Loss Characteristics
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
7500
7000
At Any Rated Load Condition And With
Rated VRRM Applied Following Surge.
Initial TJ = 130°C
6500
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
6000
5500
5000
4500
VSK.250.. Series
Per Junction
4000
3500
1
10
9000
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
Maximum Non Repetitive Surge Curren t
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained .
Initial TJ = 130°C
No Voltage Reapplied
Rated VRRM Reapplied
8000
7000
6000
5000
4000
VSK.250.. Series
Per Junction
3000
0.01
100
0.1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
700
S
R th
A
/W
5K
=0
K/
W
W
K/
.02
16
K/
W
W
K/
0.2
0
0.3
R
300
a
K/
W
0.2
5K
/W
e lt
400
-D
Conduction angle
0.
0.0
500
0.
12
180°
120°
90°
60°
30°
08
600
0.
Maximum Total On-state Power Loss (W)
1
Pulse Train Duration (s)
K/ W
200
VSK.250.. Series
Per Module
TJ = 130°C
100
0
0
100
200
300
400
500
0
600
Total RMS Output Current (A)
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-State Power Loss Characteristics
A
hS
=0
. 01
W
K/
K/
W
-D
e lt
0 .1
aR
800
Rt
180°
(Sine)
180°
(Rect)
K/
W
/W
2K
W
K/
0.0
6
1000
K/
W
03
1200
0.
04
0.
0.
05
0.0
Maximum Total Power Loss (W)
1400
K/ W
0.1
2K
/W
0 .16
K/ W
600
400
2 x VSK.250.. Series
Single Phase Bridge
Connected
TJ = 130°C
200
0 .3 K
/W
0
0
100
200
300
Total Output Current (A)
400
500
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-State Power Loss Characteristics
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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7
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
=0
K/ W
0.1
K/
W
0. 1
2K
/W
0.1
6K
/W
0.2
0K
/W
-D
e lt
aR
3 x VSK.250.. Series
Three Phase Bridge
Connected
TJ = 130°C
.01
800
200
SA
1000
400
R th
120°
(Rect)
600
W
K/
K/
W
0 .0
8K
/W
1400
1200
K/
W
03
0.
1600
05
W
K/
0.
06
04
0.
1800
0.
Maximum Total Power Loss (W)
2000
0.25
K/ W
0
0
100
200
300
400
500
Total Output Current (A)
600
700
0
20
40
60
80
100
120
Maximum Allowable Ambient Temperature (°C)
Typical Reverse Recovery Charge - Qrr (µC)
Fig. 18 - On-State Power Loss Characteristics
Tj = 25°C
Tj = 130°C
1000
VSK.170 Series
Per Junction
100
0.5
1 1.5 2 2.5 3 3.5 4 4.5
Instantaneous Forward Voltage (V)
Fig. 19 - On-State Voltage Drop Characteristics
10000
Instantaneous Forward Current (V)
1800
Tj = 25°C
Tj = 130°C
1000
VSK.250 Series
Per Junction
100
VSK.170.. Series
TJ = 130 °C
Per Junction
1600
1400
ITM = 800 A
500 A
1200
300 A
200 A
1000
100 A
800
50 A
600
400
200
0
5
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Reverse Recovery Charge Characteristics
Typical Reverse Recovery Charge - Qrr (µC)
Instantaneous Forward Current (V)
10000
2400
VSK.250.. Series
2200 TT ==130
130°C°C
JJ
PerJunction
Junction
2000 Per
ITM = 800 A
500 A
300 A
1800
200 A
1600
100 A
1400
1200
50 A
1000
800
600
400
200
0
10 20 30 40 50 60 70 80 90 100
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
Instantaneous Forward Voltage (V)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 20 - On-State Voltage Drop Characteristics
Fig. 22 - Reverse Recovery Charge Characteristics
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Document Number: 94417
Revision: 02-Jul-10
VSK.170PbF, VSK.250PbF Series
SCR/SCR and SCR/Diode
Vishay Semiconductors
(MAGN-A-PAK Power Modules), 170 A/250 A
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20 V, 10 ohms; tr < =1µs
b) Recommended load line for
<=30% rated di/dt : 10V, 20ohms
tr<=1 µs
10
(1)
(2)
(3)
(4)
PGM
PGM
PGM
PGM
=
=
=
=
10W, tp = 4ms
20W, tp = 2ms
40W, tp = 1ms
60W, tp = 0.66ms
(a)
(b)
Tj=25 °C
1
Tj=-40 °C
Tj=125 °C
Instantaneous Gate Voltage (V)
100
(1)
(2) (3) (4)
VGD
IGD
0.1
0.001
VSK.170/250 Series
0.01
0.1
Frequency Limited by PG(AV)
1
10
100
Instantaneous Gate Current (A)
Transient Thermal Impedance Z thJC (K/W)
Fig. 23 - Gate Characteristics
1
Steady State Value:
R thJC = 0.17 K/W
R thJC = 0.125 K/W
0.1
VSK.170.. Series
(DC Operation)
VSK.250.. Series
0.01
0.001
0.001
0.01
0.1
1
10
100
Square Wave Pulse Duration (s)
Fig. 24 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VSK
T
250
1
2
3
-
20
PbF
4
5
1
-
Module type
2
-
Circuit configuration (see dimensions - link at the end of datasheet)
3
-
Current rating
4
-
Voltage code x 100 = VRRM (see Voltage Ratings table)
5
-
None = Standard production
PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
Document Number: 94417
Revision: 02-Jul-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
9
VSK.170PbF, VSK.250PbF Series
Vishay Semiconductors
SCR/SCR and SCR/Diode
(MAGN-A-PAK Power Modules), 170 A/250 A
CIRCUIT CONFIGURATION
VSKH...
VSKT...
VSKL...
~
~
~
~
~
~
+
+
+
+
+
+
-
-
-
K1G1 G2 K2
VSKU...
K1G1
-
Available from 400 V to 1600 V for VSK.170PbF Series,
available from 400 V to 2000 V for VSK.250PbF Series
VSKV...
+
+
-
-
-
-
+
+
-
-
K1G1 G2 K2
+
+
K1G1 G2 K2
Available up to 1200 V,
contact factory for different requirement
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com
10
www.vishay.com/doc?95086
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 94417
Revision: 02-Jul-10
Outline Dimensions
Vishay Semiconductors
MAGN-A-PAK
DIMENSIONS in millimeters (inches)
Ø 5.5
35 (1.38)
20 (0.79)
80 (3.15)
50 (1.97)
38 (1.5)
6
(0.24)
3 screws M8 x 1.25
28 (1.12)
6 (0.24)
9 (0.35)
10 (0.39)
HEX 13
52 (2.04)
51 (2.01)
32
(1.26)
115 (4.53)
92 (3.62)
Notes
• Dimensions are nominal
• Full engineering drawings are available on request
• UL identification number for gate and cathode wire: UL 1385
• UL identification number for package: UL 94 V-0
Document Number: 95086
Revision: 03-Aug-07
For technical questions, contact: [email protected]
www.vishay.com
1
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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including but not limited to the warranty expressed therein.
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Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Revision: 12-Mar-12
1
Document Number: 91000
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