IRF IRKT91-04AS90 Thyristor/ diode and thyristor/ thyristor Datasheet

Bulletin I27132 rev. I 09/04
IRK.71, .91 SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Industrial Standard Package
Thick Al metal die and double stick bonding
Thick copper baseplate
UL E78996 approved
3500VRMS isolating voltage
Up to 1600V
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
75 A
95 A
Mechanical Description
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solid Copper baseplate at the bottom side of the device.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
The electrical terminals are secured against axial pull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
Electrical Description
These modules are intended for general purpose high
voltage applications such as high voltage regulated power
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
Major Ratings and Characteristics
Parameters
IRK.71
IRK.91
Units
75
95
A
IO(RMS) (*)
165
210
A
ITSM @ 50Hz
1665
1785
A
IFSM @ 60Hz
1740
1870
A
@ 50Hz
13.86
15.91
KA 2s
@ 60Hz
12.56
14.52
KA 2s
138.6
159.1
KA 2√s
IT(AV) or I F(AV)
@ 85°C
2
I t
2
I √t
VRRM range
400 to 1600
TSTG
- 40 to 125
o
V
C
TJ
- 40 to125
o
C
(*) As AC switch.
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1
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number
Voltage
Code
IRK.71/ .91
VRRM , maximum
VRSM , maximum
VDRM , max. repetitive
repetitive
non-repetitive
peak off-state voltage,
peak reverse voltage peak reverse voltage
gate open circuit
-
V
V
V
04
400
500
400
06
600
700
600
08
800
900
800
10
1000
1100
1000
12
1200
1300
1200
14
1400
1500
1400
16
1600
1700
1600
IRRM
IDRM
125°C
mA
15
On-state Conduction
Parameters
IT(AV)
IRK.91
75
95
165
210
Units
Conditions
Max. average on-state
current (Thyristors)
IF(AV)
IRK.71
Max. average forward
180 o conduction, half sine wave,
TC = 85o C
current (Diodes)
IO(RMS) Max. continuous RMS
on-state current.
As AC switch
I(RMS)
A
or
ITSM
Max. peak, one cycle
1665
1785
t=10ms No voltage
or
non-repetitive on-state
1740
1870
t=8.3ms reapplied
IFSM
or forward current
I2 t
Max. I2t for fusing
1400
1500
t=10ms 100% VRRM
1570
t=8.3ms reapplied
1850
2000
t=10ms TJ = 25oC,
t=8.3ms no voltage reapplied
1940
2100
13.86
15.91
t=10ms No voltage
12.56
14.52
t=8.3ms reapplied
9.80
11.25
8.96
10.27
17.11
20.00
15.60
18.30
138.6
159.1
VT(TO) Max. value of threshold
0.82
0.80
voltage (2)
0.85
0.85
Max. value of on-state
3.00
2.40
slope resistance (2)
2.90
2.25
1.59
1.58
rt
VTM
Max. peak on-state or
VFM
forward voltage
di/dt
Max. non-repetitive rate
of rise of turned on
2
KA s
Max. holding current
Max. latching current
(1) I2t for time t x = I2√t x √tx
Initial TJ = T J max.
t=8.3ms reapplied
t= 8.3ms no voltage reapplied
KA2√s
V
mΩ
V
t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
Low level (3)
High level (4)
Low level (3)
High level (4)
ITM = π x IT(AV)
IFM = π x IF(AV)
TJ = T J max
TJ = TJ max
TJ = 25°C
TJ = 25 oC, from 0.67 V DRM ,
150
A/µs
I TM =π x I T(AV), I g = 500mA,
t r < 0.5 µs, t p > 6 µs
250
T J = 25oC, anode supply = 6V,
mA
IL
t=10ms 100% VRRM
Initial TJ = T J max.
t=10ms TJ = 25oC,
current
IH
Sinusoidal
half wave,
1470
Max. I2√t for fusing (1)
I2√t
I(RMS)
400
resistive load, gate open circuit
TJ = 25oC, anode supply = 6V, resistive load
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2
(3) 16.7% x π x I AV < I < π x IAV
(4) I > π x IAV
2
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Triggering
Parameters
IRK.71
12
12
PG(AV) Max. average gate power
3.0
3.0
IGM
3.0
3.0
PGM
Max. peak gate power
IRK.91
Max. peak gate current
-VGM Max. peak negative
VGT
gate voltage
10
Max. gate voltage
4.0
required to trigger
Units
W
A
TJ = - 40°C
V
2.5
TJ = 25°C
1.7
IGT
Max. gate current
required to trigger
TJ = 125°C
270
150
TJ = - 40°C
TJ = 25°C
mA
80
VGD
IGD
Max. gate voltage
that will not trigger
Max. gate current
that will not trigger
Conditions
TJ = 125°C
0.25
V
6
mA
Anode supply = 6V
resistive load
Anode supply = 6V
resistive load
TJ = 125o C,
rated VDRM applied
TJ = 125o C,
rated VDRM applied
Blocking
Parameters
IRK.71
IRRM
Max. peak reverse and
IDRM
off-state leakage current
IRK.91
Units
15
Conditions
mA
TJ = 125 oC, gate open circuit
at VRRM , VDRM
VINS
2500 (1 min)
RMS isolation voltage
dv/dt Max. critical rate of rise
of off-state voltage (5)
50 Hz, circuit to base, all terminals
V
3500 (1 sec)
500
shorted
T J = 125 oC, linear to 0.67 VDRM ,
gate open circuit
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
TJ
Junction operating
temperature range
Tstg
Storage temp. range
IRK.91
Units
Conditions
- 40 to 125
°C
- 40 to 125
RthJC Max. internal thermal
resistance, junction
0.165
0.135
Per module, DC operation
to case
K/W
RthCS Typical thermal resistance
case to heatsink
T
Mounting torque ± 10%
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
5
to heatsink
busbar
wt
Mounting surface flat, smooth and greased
0.1
Nm
3
Approximate weight
110 (4)
Case style
gr (oz)
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Devices
IRK.71
IRK.91
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Sine half wave conduction
180o
0.06
0.04
120o
0.07
0.05
90 o
0.09
0.06
60o
0.12
0.08
Rect. wave conduction
30 o
0.18
0.12
180o
0.04
0.03
120 o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
Units
°C/W
3
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Ordering Information Table
Device Code
IRK
T
91
1
2
3
/
16
A
S90
4
5
6
IRK.92 types
With no auxiliary cathode
1
-
2
-
Module type
Circuit configuration (See Circuit Configuration table below)
3
-
Current code * *
4
-
Voltage code (See Voltage Ratings table)
5
-
A : Gen V
6
-
dv/dt code:
* * Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
e.g. : IRKT92/16A etc.
S90 = dv/dt 1000 V/µs
No letter = dv/dt 500 Vµs
Outline Table
Dimensions are in millimeters and [inches]
IRKT
IRKH
(1)
~
(1)
~
+
(2)
+
(2)
+
(2)
(3)
(3)
(3)
G1 K1
(4) (5)
IRKN
IRKL
(1)
~
K2 G2
(7) (6)
G1 K1
(4) (5)
(1)
-
(2)
+
+
(3)
K2 G2
(7) (6)
G1 K1
(4) (5)
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.71, .91 Series
IRK.71.. Series
RthJC (DC) = 0.33 K/ W
120
110
Cond uction Angle
100
90
30°
60°
90°
80
120°
180°
70
0
10
20
30
40
50
60
70
80
IRK.71.. Series
R thJC (DC) = 0.33 K/ W
120
110
Cond uction Period
100
90
30°
80
RMS Limit
40
Conduction Angle
IRK.71.. Series
Per Junction
TJ = 125°C
20
0
0
20
10
20
30
40
50
60
70
80
1200
1100
1000
900
700
80
100
IRK.71.. Series
Per Junc tion
1
10
100
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
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120
DC
180°
120°
90°
60°
30°
120
100
80
RMS Limit
60
Conduc tion Period
40
IRK.71.. Series
Per Junc tion
TJ = 125°C
20
0
0
20
40
60
80
100
120
Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
At Any Ra ted Loa d Condition And With
Rated VRRM App lied Following Surg e.
Initial TJ= 125°C
@60 Hz 0.0083 s
@50 Hz 0.0100 s
800
60
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
1300
40
140
Average On-state Current (A)
1400
DC
Fig. 2 - Current Ratings Characteristics
80
1500
180°
70
Fig. 1 - Current Ratings Characteristics
100
1600
60°
90°
120°
Average On-state Current (A)
180°
120°
90°
60°
30°
0
130
Average On-state Current (A)
120
60
Maximum Allowable Case Temperature (°C)
130
Maximum Average On-state Power Loss (W)
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C)
Bulletin I27132 rev. I 09/04
1800
1600
1400
Maximum Non Rep etitive Surg e Current
Versus Pulse Train Duration. Control
Of Conduc tion May Not Be Ma intained .
Initial TJ= 125°C
No Volta ge Reap plied
Ra ted V RRMReap p lied
1200
1000
800
IRK.71.. Series
Per Junction
600
0.01
0.1
1
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
5
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
=
0.
K/
W
/W
1K
K/
W
ta
el
-D
150
SA
0.
5
W
K/
0.
4
W
K/
3
0.
200
R th
180°
120°
90°
60°
30°
2
0.
0.7
K/
W
R
Maximum Total On-sta te Power Lo ss (W)
250
1K
/W
100
Conduction Angle
1.5
K/ W
IRK.71.. Series
Per Mod ule
TJ = 125°C
50
3 K/ W
0
0
20
40
60
80 100 120 140 160 180
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutp ut Current (A)
Fig. 7 - On-state Power Loss Characteristics
180°
(Sine)
180°
(Rec t)
=
1
0.
K/
W
R
0.
3
300
lt a
e
-D
0.
2
W
K/
400
A
hS
500
Rt
Maximum Total Power Loss (W)
600
K/
W
0.5
K/ W
200
2 x IRK.71.. Series
Single Phase Bridge
Connected
T J = 125°C
100
0
0
20
40
60
1 K/
W
2 K/ W
0
80 100 120 140 160 180
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total Output Current (A)
Fig. 8 - On-state Power Loss Characteristics
700
R
600
SA
th
Maximum Total Power Loss (W)
800
500
120°
(Rect)
400
0.
2
=
0.
1
K/
W
K/
W
-D
el
ta
0.3
K/
W
300
3 x IRK.71.. Series
Three Pha se Brid ge
Connected
TJ = 125°C
200
100
R
0.5
K/ W
1 K/ W
0
0
40
80
120
160
Total Output Current (A)
200
0
240
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
6
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IRK.71, .91 Series
130
IRK.91.. Series
RthJC (DC) = 0.27 K/ W
120
110
Cond uc tion Angle
100
90
30°
60° 90°
120°
80
180°
70
0
20
40
60
80
100
Maximum Allowable Case Temperature (°C)
Maximum Allowable Case Temperature (°C)
Bulletin I27132 rev. I 09/04
130
IRK.91.. Series
R thJC (DC) = 0.27 K/ W
120
110
Conduc tion Period
100
90
30°
90°
120°
0
20
RMS Limit
60
Conduc tio n Angle
40
IRK.91.. Series
Per Junction
TJ = 125°C
20
0
0
20
40
60
80
100
Maximum Average On-state Power Loss (W)
80
40
60
80
100 120 140 160
Fig. 11 - Current Ratings Characteristics
180
DC
180°
120°
90°
60°
30°
160
140
120
100
RMS Limit
80
Conduction Period
60
IRK.91.. Series
Per Junc tion
TJ = 125°C
40
20
0
0
20
40
60
80
100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
1600
At Any Rated Loa d Condition And With
Rated V RRM Applied Following Surg e.
Initial TJ = 125°C
1500
1400
@60 Hz 0.0083 s
@50 Hz 0.0100 s
1300
1200
1100
1000
900
IRK.91.. Series
Per Junction
800
700
1
10
100
Peak Half Sine Wave On-state Current (A)
Maximum Avera ge On-sta te Power Loss (W)
Peak Half Sine Wave On-state Current (A)
140
100
DC
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
120
180°
70
Average On-state Current (A)
180°
120°
90°
60°
30°
60°
80
1800
1600
1400
Ma ximum Non Repetitive Surg e Current
Versus Pulse Train Duration. Control
Of Cond uc tion Ma y Not Be Ma intained .
Initial TJ= 125°C
No Voltage Reap p lied
Ra ted VRRM Reap p lied
1200
1000
800
IRK.91.. Series
Per Junction
600
0.01
0.1
1
Numb er Of Eq ua l Amp litud e Half Cyc le Current Pulses (N)
Pulse Train Duration (s)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
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7
IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
IRK.91.. Series
Per Mod ule
TJ = 125°C
0
0
40
80
120
160
200
R
100
a
0.
5K
/W
0.7
K/
W
1K
/W
1.5 K
/W
Conduc tion Angle
50
K/
W
e lt
-D
150
K/
W
W
K/
200
0.
3
1
0.
250
0.
2
=
180°
120°
90°
60°
30°
SA
300
R th
Maximum Total On-state Power Loss (W)
350
3 K/ W
240
0
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Total RMSOutp ut Current (A)
Fig. 16 - On-state Power Loss Characteristics
180°
(Sine)
180°
(Rect)
=
1
0.
0.
2
W
K/
400
A
hS
500
Rt
K/
W
ta
el
-D
0.
3K
/W
300
R
Maximum Total Power Loss (W)
600
0.5
K/ W
200
2 x IRK.91.. Series
Single Phase Bridge
Connected
T J = 125°C
100
1 K/
W
2 K/ W
0
0
40
80
120
160
200
0
Total Output Current (A)
20
40
60
80
100
120
140
Maximum Allowable Amb ient Temperature (°C)
Fig. 17 - On-state Power Loss Characteristics
800
R
700
SA
th
Maximum Total Power Loss (W)
900
600
120°
(Rect)
500
0.
1
0.
2K
/W
400
K/
W
-D
el
ta
R
0.3
K/
W
300
3 x IRK.91.. Series
Three Pha se Brid ge
Connected
TJ = 125°C
200
100
0
=
0
40
80
120
160
200
Total Output Current (A)
240
0.5
K/ W
1 K/ W
0
280
20
40
60
80
100
120
140
Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
8
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
1000
TJ= 25°C
10
TJ= 125°C
IRK.71.. Series
Per Junction
1
0.5
Maximum Reverse Rec overy Cha rge - Qrr (µC)
Instantaneous On-state Current (A)
100
1
1.5
2
2.5
3
3.5
100
TJ= 25°C
TJ= 125°C
10
IRK.91.. Series
Per Junction
1
0.5
4
1
1.5
2
2.5
3
3.5
Instantaneous On-state Voltage (V)
Instantaneous On-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
Fig. 20 - On-state Voltage Drop Characteristics
700
ITM = 200 A
IRK.71.. Series
IRK.91.. Series
TJ = 125 °C
600
Maximum Reverse Re covery Current - Irr (A)
Instantaneous On-state Current (A)
1000
100 A
500
50 A
400
20 A
300
10 A
200
100
10
20
30
40
50
60
70
80
90 100
140
120
I TM = 200 A
100 A
100
50 A
80
20 A
10 A
60
40
20
10
Rate Of Fall Of On-state Current - di/ dt (A/ µs)
20
30
40
50
60
70
80
90 100
Rate Of Fall Of Forward Current - di/ dt (A/ µs)
Fig. 21 - Recovery Charge Characteristics
Transient Thermal Impedanc e Z thJC (K/W)
IRK.71.. Series
IRK.91.. Series
TJ = 125 °C
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
RthJC = 0.33 K/ W
RthJC = 0.27 K/ W
(DC Operation)
IRK.71.. Series
IRK.91.. Series
0.1
Per Junction
0.01
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance Z thJC Characteristics
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IRK.71, .91 Series
Bulletin I27132 rev. I 09/04
Rectangular gate pulse
a)Recommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/ dt: 15 V, 40 ohms
10
tr = 1 µs, tp >= 6 µs
(1) PGM
(2) PGM
(3) PGM
(4) PGM
= 200 W, tp = 300 µs
= 60 W, tp = 1 ms
= 30 W, tp = 2 ms
= 12 W, tp = 5 ms
(a)
(b)
TJ = -40 °C
TJ = 125 °C
1
TJ = 25 °C
Instantaneous Gate Voltage (V)
100
(4)
(3) (2)
(1)
VGD
IGD
0.1
0.001
0.01
IRK.71../ .91.. Series Frequenc y Limited by PG(AV)
0.1
1
10
100
1000
Instantaneous Gate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 09/04
10
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