$GYDQFHG 3RZHU 026)(7 IRL620A FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.8Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-220 ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 200V ♦ Lower RDS(ON): 0.609Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID Characteristic Drain-to-Source Voltage V Continuous Drain Current (TC=100°C) 3.2 VGS Gate-to-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR dv/dt TL 200 5 Drain Current-Pulsed TJ , TSTG Units Continuous Drain Current (TC=25°C) IDM PD Value A 18 A ±20 V (2) 33 mJ (1) 5 A Repetitive Avalanche Energy (1) 3.9 mJ Peak Diode Recovery dv/dt (3) (1) Total Power Dissipation (TC=25°C) Linear Derating Factor Operating Junction and V/ns W 0.31 W/°C - 55 to +150 Storage Temperature Range °C Maximum Lead Temp. for Soldering Purposes, 1/8 5 39 300 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. RθJC Junction-to-Case -- 3.17 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units °C/W Rev. B ©1999 Fairchild Semiconductor Corporation 1 1&+$11(/ 32:(5 026)(7 IRL620A Electrical Characteristics (TC=25°C unless otherwise specified) Symbol Characteristic BVDSS Drain-Source Breakdown Voltage 200 -- -- ∆BV/∆TJ Breakdown Voltage Temp. Coeff. -- 0.18 -- 1.0 -- 2.0 Gate-Source Leakage , Forward -- -- 100 Gate-Source Leakage , Reverse -- -- -100 -- -- 10 -- -- 100 -- -- 0.8 Ω VGS=5V,ID=2.5A (4) Ω VDS=40V,ID=2.5A (4) VGS(th) IGSS IDSS RDS(on) Min. Typ. Max. Units Gate Threshold Voltage Drain-to-Source Leakage Current Static Drain-Source On-State Resistance gfs Forward Transconductance -- 3.3 -- Ciss Input Capacitance -- 330 430 Coss Output Capacitance -- 55 70 Crss Reverse Transfer Capacitance -- 25 30 td(on) Turn-On Delay Time -- 8 25 Rise Time -- 6 20 Turn-Off Delay Time -- 24 60 Fall Time -- 6 20 tr td(off) tf Qg Total Gate Charge -- 10.3 15 Qgs Gate-Source Charge -- 2.0 -- Qgd Gate-Drain ( Miller ) Charge -- 4.4 -- V Test Condition VGS=0V,ID=250µA V/°C ID=250µA V nA µA pF See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=-20V VDS=200V VDS=160V,TC=125°C VGS=0V,VDS=25V,f =1MHz See Fig 5 VDD=100V,ID=5A, ns RG=9Ω See Fig 13 (4) (5) VDS=160V,VGS=5V, nC ID=5A See Fig 6 & Fig 12 (4) (5) Source-Drain Diode Ratings and Characteristics Symbol Characteristic IS Continuous Source Current Min. Typ. Max. Units -- -- 5 A Test Condition Integral reverse pn-diode ISM Pulsed-Source Current (1) -- -- 18 VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25°C,IS=5A,VGS=0V trr Reverse Recovery Time -- 140 -- ns TJ=25°C,IF=5A Qrr Reverse Recovery Charge -- 0.59 -- µC diF/dt=100A/µs in the MOSFET (4) Notes; (1) Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature (2) L=2mH, IAS=5A, VDD=50V, RG=27Ω, Starting TJ =25°C (3) ISD ≤ 5A, di/dt ≤ 180A/µs, VDD ≤ BVDSS , Starting TJ =25°C (4) Pulse Test : Pulse Width = 250µs, Duty Cycle ≤ 2% (5) Essentially Independent of Operating Temperature 2 1&+$11(/ 32:(5 026)(7 IRL620A Fig 1. Output Characteristics Fig 2. Transfer Characteristics VGS Top : 7.0 V 6.0 V 101 5.5 V 5.0 V ID , Drain Current [A] ID , Drain Current [A] 101 4.5 V 4.0 V 100 3.5 V Bottom : 3.0V @ Notes : 1. 250 µs Pulse Test 2. TC = 25 oC 10-1 10-1 100 150 oC 100 25 oC - 55 C 10-1 101 0 2 8 10 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage IDR , Reverse Drain Current [A] RDS(on) , [ Ω ] Drain-Source On-Resistance 6 VGS , Gate-Source Voltage [V] 1.5 VGS = 5 V 1.0 0.5 VGS = 10 V o @ Note : TJ = 25 C 0.0 0 4 V , Drain-Source Voltage [V] DS 2.0 @ Notes : 1. VGS = 0 V 2. VDS = 40 V 3. 250 µs Pulse Test o 3 6 9 12 15 18 101 100 @ Notes : 1. VGS = 0 V 2. 250 µs Pulse Test 150 oC o 25 C 10-1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ID , Drain Current [A] VSD , Source-Drain Voltage [V] Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage 500 C iss 300 200 C oss 100 C rss 00 10 @ Notes : 1. VGS = 0 V 2. f = 1 MHz 1 10 VDS , Drain-Source Voltage [V] 6 VDS = 40 V VGS , Gate-Source Voltage [V] Capacitance [pF] 400 Ciss= Cgs+ Cgd ( Cds= shorted ) Coss= Cds+ Cgd Crss= Cgd VDS = 100 V VDS = 160 V 4 2 @ Notes : ID = 5 A 0 0 2 4 6 8 10 12 Q , Total Gate Charge [nC] G 3 1&+$11(/ 32:(5 026)(7 IRL620A Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature 2.5 RDS(on) , (Normalized) Drain-Source On-Resistance BVDSS , (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 @ Notes : 1. VGS = 0 V 2.0 1.5 1.0 @ Notes : 1. VGS = 5 V 2. ID = 2.5 A 0.5 2. ID = 250 µA 0.8 -75 -50 -25 0 25 50 75 100 125 150 0.0 -75 175 -50 -25 0 25 50 75 100 125 150 175 T , Junction Temperature [oC] TJ , Junction Temperature [oC] Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature J ID , Drain Current [A] 5 101 100 µs 1 ms 10 ms DC 0 10 @ Notes : 1. TC = 25 oC 10-1 2. TJ = 150 oC 4 3 2 1 3. Single Pulse 100 101 0 25 102 50 75 100 125 150 Tc , Case Temperature [oC] V , Drain-Source Voltage [V] DS Thermal Response Fig 11. Thermal Response D=0.5 100 @ Notes : 1. Z J C (t)=3.17 o C/W Max. 0.2 θ -1 10 0.1 2. Duty Factor, D=t1 /t2 0.05 3. TJ M -TC =PD M *Z θ JC t1 single pulse 10- 5 (t) PDM 0.02 0.01 θJC Z (t) , ID , Drain Current [A] 6 Operation in This Area is Limited by R DS(on) 10- 4 t 1 10- 3 t2 10- 2 10- 1 , Square Wave Pulse Duration 100 101 [sec] 4 1&+$11(/ 32:(5 026)(7 IRL620A Fig 12. Gate Charge Test Circuit & Waveform Current Regulator VGS Same Type as DUT 50kΩ Qg 200nF 12V 5V 300nF VDS Qgs VGS Qgd DUT 3mA R1 R2 Current Sampling (IG) Resistor Charge Current Sampling (ID) Resistor Fig 13. Resistive Switching Test Circuit & Waveforms RL Vout Vout 90% VDD Vin ( 0.5 rated VDS ) RG DUT Vin 10% 5V td(on) tr td(off) t on tf t off Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- LL IAS2 -------------------2 BVDSS -- VDD LL VDS Vary tp to obtain required peak ID BVDSS IAS ID RG C DUT ID (t) VDD VDS (t) VDD 5V tp tp Time 5 1&+$11(/ 32:(5 026)(7 IRL620A Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS -- IS L Driver VGS RG VGS VGS ( Driver ) Same Type as DUT VDD dv/dt controlled by RG IS controlled by Duty Factor D Gate Pulse Width D = -------------------------Gate Pulse Period 5V IFM , Body Diode Forward Current IS ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt Vf VDD Body Diode Forward Voltage Drop 6 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ E2CMOSTM FACT™ FACT Quiet Series™ FAST® FASTr™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ POP™ PowerTrench™ QS™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 TinyLogic™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 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