IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () VGS = 5 V 0.05 Qg (Max.) (nC) 35 Qgs (nC) 7.1 Qgd (nC) 25 Configuration I2PAK • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Surface Mount (IRLZ34S, SiHLZ34S) • Low-Profile Through-Hole (IRLZ34L, SiHLZ34L) • 175 °C Operating Temperature • Fast Switching • Fully Avalanche Rated • Compliant to RoHS Directive 2002/95/EC 60 Single D2PAK (TO-262) G G D S D DESCRIPTION S Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. The through-hole version (IRLZ34L, SiHLZ34L) is available for low-profile applications. (TO-263) G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb) free and Halogen-free Lead (Pb) free D2PAK (TO-263) SiHLZ34S-GE3 - I2PAK (TO-262) IRLZ34LPbF SiHLZ34L-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT VDS VGS 60 ± 10 30 21 110 0.59 128 88 3.7 4.5 - 55 to + 175 300d Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at 5 V TC = 25 °C TC = 100 °C Currenta Pulsed Drain Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) ID IDM EAS TC = 25 °C TA = 25 °C PD dV/dt TJ, Tstg for 10 s UNIT V A W/°C mJ W V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, Starting TJ = 25 °C, L = 285 μH, Rg = 25 , IAS = 30 A (see fig. 12). c. ISD 30 A, dI/dt 200 A/μs, VDD VDS, TJ 175 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90418 S11-1044-Rev. D, 30-May-11 www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient (PCB Mount)a PARAMETER RthJA - - 40 Maximum Junction-to-Case (Drain) RthJC - - 1.7 UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0, ID = 250 μA 60 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 0.07 - V/°C VGS(th) VDS = VGS, ID = 250 μA 1.0 - 2.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 10 V - - ± 100 VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 VGS = 5 V ID = 18 Ab - - 0.05 VGS = 4 V ID = 15 Ab - - 0.07 12 - - - 1600 - - 660 - - 170 - - - 35 VDS = 25 V, ID = 18 A μA S Dynamic Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 7.1 Gate-Drain Charge Qgd - - 25 Turn-On Delay Time td(on) - 14 - - 170 - - 30 - - 56 - - 7.5 - - - 30 - - 110 Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance tr td(off) VGS = 5 V ID = 30 A, VDS = 48 V, see fig. 6 and 13b VDD = 30 V, ID = 30 A, Rg = 6 , RD = 1 , see fig. 10b tf LS Between lead, and center of die contact pF nC ns nH Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 30 A, VGS = 0 Vb TJ = 25 °C, IF = 30 A, dI/dt = 100 A/μsb - - 1.6 V - 120 180 ns - 700 1300 nC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. www.vishay.com 2 Document Number: 90418 S11-1044-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, TC = 175 °C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 90418 S11-1044-Rev. D, 30-May-11 www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 90418 S11-1044-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix VDS VGS RD D.U.T. Rg + - VDD 5V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % Fig. 10a - Switching Time Test Circuit VDS 90 % 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature tr td(off) tf Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 90418 S11-1044-Rev. D, 30-May-11 www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD Rg D.U.T. + - I AS V DD VDS 5V 0.01 W tp Fig. 12a - Unclamped Inductive Test Circuit IAS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 5V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 90418 S11-1044-Rev. D, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34S, IRLZ34L, SiHLZ34S, SiHLZ34L Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?90418. Document Number: 90418 S11-1044-Rev. D, 30-May-11 www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1