ISOCOM IS206

IS205X, IS206X
IS205, IS206
NON-BASE LEAD
OPTICALLY COUPLED ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
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UL recognised, File No. E91231
Dimensions in mm
2.54
Package Code " GG "
7.0
6.0
'X' SPECIFICATIONAPPROVALS
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VDE 0884 in 3 available lead form :- STD
- G form
1
2
6
5
3
4
1.2
7.62
6.62
- SMD approved to CECC 00802
7.62
4.0
3.0
13°
Max
0.5
DESCRIPTION
The IS205, IS206 series of optically coupled
isolators consist of an infrared light emitting
diode and a NPN silicon photo transistor in a
standard 6 pin dual in line plastic package with
the base pin unconnected.
FEATURES
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Options :10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
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High Current Transfer Ratio (50% min)
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High Isolation Voltage (5.3kVRMS ,7.5kVPK )
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Base pin unconnected for improved
noise immunity in high EMI
environment
APPLICATIONS
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DC motor controllers
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Industrial systems controllers
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Signal transmission between systems of
different potentials and impedances
OPTION SM
OPTION G
SURFACE MOUNT
7.62
3.0
0.5
3.35
0.26
ABSOLUTEMAXIMUMRATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUTDIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current
Power Dissipation
30V
6V
50mA
160mW
POWER DISSIPATION
0.6
0.1
10.46
9.86
1.25
0.75
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
0.26
10.16
ISOCOM COMPONENTS 2004 LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
17/7/08
DB92011
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
Input
MIN TYP MAX UNITS
Forward Voltage (VF)
1.2
Reverse Current (IR)
Output
Coupled
Collector-emitter Breakdown (BVCEO)
( Note 2 )
Emitter-collector Breakdown (BVECO)
Collector-emitter Dark Current (ICEO)
Current Transfer Ratio (CTR) (Note 2)
IS205
IS206
Input to Output Isolation Voltage VISO
Note 1
Note 2
17/7/08
tr
tf
V
IF = 10mA
10
μA
VR = 6V
V
IC = 1mA
V
nA
IE = 100μA
VCE = 10V
%
%
10mA IF , 10V VCE
10mA IF , 10V VCE
V
10mA IF , 0.5mA IC
VRMS
VPK
See note 1
See note 1
Ω
VIO = 500V (note 1)
μs
μs
VCC = 5V,
IF = 10mA, RL = 75Ω
6
50
100
50
0.4
5300
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time
Output Fall Time
1.5
30
Collector-emitter SaturationVoltageVCE (SAT)
2
2
TEST CONDITION
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
DB92011m-AAS/A2
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
150
100
50
50
30
40
20
30
15
20
10
10
IF = 5mA
0
0
-30
0
25
50
75
100
0
125
6
8
Collector-emitter Saturation
Voltage vs. Ambient Temperature
60
50
40
30
20
0
-30
0
25
50
75
100
125
Collector-emitter saturation voltage VCE(SAT) (V)
Forward Current vs. Ambient Temperature
10
0.12
IF = 10mA
IC = 0.5mA
0.10
0.08
0.06
0.04
0.02
0
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
Relative current transfer ratio
1.5
10
0.14
Ambient temperature TA ( °C )
Relative current transfer ratio
4
Collector-emitter voltage VCE ( V )
70
IF = 10mA
VCE = 10V
1.0
0.5
1.4
1.2
1.0
0.8
0.6
0.4
VCE = 10V
TA = 25°C
0.2
0
0
-30
17/7/08
2
Ambient temperature TA ( °C )
80
Forward current IF (mA)
TA = 25°C
50
Collector current IC (mA)
Collector power dissipation PC (mW)
200
0
25
50
75
Ambient temperature TA ( °C )
100
1
2
5
10
20
50
Forward current IF (mA)
DB92011m-AAS/A2