ISSI IS61LF25618A-6.5B3I 128k x 32, 128k x 36, 256k x 18 4 mb synchronous flow-through static ram Datasheet

IS61(64)LF12832A IS64VF12832A
IS61(64)LF12836A IS61(64)VF12836A
IS61(64)LF25618A IS61(64)VF25618A
ISSI
128K x 32, 128K x 36, 256K x 18
4 Mb SYNCHRONOUS FLOW-THROUGH
STATIC RAM
FEATURES
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Burst sequence control using MODE input
• Three chip enable option for simple depth expansion and address pipelining
• Common data inputs and data outputs
• Auto Power-down during deselect
• Single cycle deselect
• Snooze MODE for reduced-power standby
• Power Supply
LF: VDD 3.3V + 5%, VDDQ 3.3V/2.5V + 5%
VF: VDD 2.5V -5% +10%, VDDQ 2.5V -5% +10%
• JEDEC 100-Pin TQFP, 119-pin PBGA, and
165-pin PBGA packages
• Automotive temperature available
• Lead-free available
®
PRELIMINARY INFORMATION
AUGUST 2005
DESCRIPTION
The ISSI IS61(64)LF12832A,
IS64VF12832A,
IS61(64)LF/VF12836A and IS61(64)LF/VF25618A are
high-speed, low-power synchronous static RAMs designed
to provide burstable, high-performance memory for communication and networking applications. The
IS61(64)LF12832A is organized as 131,072 words by 32
bits. The IS61(64)LF/VF12836A is organized as 131,072
words by 36 bits. The IS61(64)LF/VF25618A is organized
as 262,144 words by 18 bits. Fabricated with ISSI's
advanced CMOS technology, the device integrates a 2-bit
burst counter, high-speed SRAM core, and high-drive
capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a
positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by
the rising edge of the clock input. Write cycles can be one
to four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
Byte write operation is performed by using byte write
enable (BWE) input combined with one or more individual
byte write signals (BWx). In addition, Global Write (GW) is
available for writing all bytes at one time, regardless of the
byte write controls.
Bursts can be initiated with either ADSP (Address Status
Processor) or ADSC (Address Status Cache Controller)
input pins. Subsequent burst addresses can be generated
internally and controlled by the ADV (burst address advance) input pin.
The mode pin is used to select the burst sequence order,
Linear burst is achieved when this pin is tied LOW.
Interleave burst is achieved when this pin is tied HIGH or
left floating.
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
-6.5
6.5
7.5
133
-7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
1
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
BLOCK DIAGRAM
MODE
A0'
Q0
CLK
CLK
BINARY
COUNTER
CE
ADV
ADSC
ADSP
A1'
Q1
128Kx32;
128Kx36;
256Kx18
MEMORY ARRAY
CLR
A0, A1
17/18
A
15/16
D
17/18
Q
ADDRESS
REGISTER
CE
CLK
32, 36,
or 18
GW
BWE
BW(a-d)
x18: a,b
x32/x36: a-d
D
32, 36,
or 18
Q
DQ(a-d)
BYTE WRITE
REGISTERS
CLK
CE
32, 36,
or 18
2/4/8
Q
CE2
D
CE2
ENABLE
REGISTER
INPUT
REGISTERS
CLK
DQa - DQd
OE
CE
CLK
OE
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
165-PIN BGA
119-PIN BGA
165-Ball, 13x15 mm BGA
119-Ball, 14x22 mm BGA
®
BOTTOM VIEW
BOTTOM VIEW
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
3
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
119 BGA PACKAGE PIN CONFIGURATION
128K X 36 (TOP VIEW)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
4
5
6
7
VDDQ
NC
NC
DQc
DQc
VDDQ
DQc
DQc
VDDQ
DQd
DQd
VDDQ
DQd
DQd
NC
NC
VDDQ
A
CE2
A
DQPc
DQc
DQc
DQc
DQc
VDD
DQd
DQd
DQd
DQd
DQPd
A
NC
NC
A
A
A
Vss
Vss
Vss
BWc
Vss
NC
Vss
BWd
Vss
Vss
Vss
MODE
A
NC
ADSP
ADSC
VDD
NC
CE
OE
ADV
GW
VDD
CLK
NC
BWE
A1 *
A0 *
VDD
A
NC
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
NC
A
CE2
A
DQPb
DQb
DQb
DQb
DQb
VDD
DQa
DQa
DQa
DQa
DQPa
A
NC
NC
VDDQ
NC
NC
DQb
DQb
VDDQ
DQb
DQb
VDDQ
DQa
DQa
VDDQ
DQa
DQa
NC
ZZ
VDDQ
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
4
Pin Name
Address Inputs
Symbol
OE
Pin Name
Output Enable
A0, A1
Synchronous Burst Address Inputs
ZZ
Power Sleep Mode
ADV
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Advance
Address Status Processor
NC
No Connect
ADSC
Address Status Controller
DQa-DQd
Data Inputs/Outputs
GW
Global Write Enable
DQPa-Pd
Output Power Supply
CLK
Synchronous Clock
VDD
Power Supply
CE, CE2, CE2 Synchronous Chip Select
VDDQ
Output Power Supply
BWx (x=a-d)
Synchronous Byte Write Controls
Vss
Ground
BWE
Byte Write Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
119 BGA PACKAGE PIN CONFIGURATION
256KX18 (TOP VIEW)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
1
2
3
4
5
6
7
VDDQ
NC
NC
DQb
NC
VDDQ
NC
DQb
VDDQ
NC
DQb
VDDQ
DQb
NC
NC
NC
VDDQ
A
CE2
A
NC
DQb
NC
DQb
NC
VDD
DQb
NC
DQb
NC
DQPb
A
A
NC
A
A
A
Vss
Vss
Vss
BWb
Vss
NC
Vss
Vss
Vss
Vss
Vss
MODE
A
NC
ADSP
ADSC
VDD
NC
CE
OE
ADV
GW
VDD
CLK
NC
BWE
A1 *
A0*
VDD
NC
NC
A
A
A
Vss
Vss
Vss
Vss
Vss
NC
Vss
BWa
Vss
Vss
Vss
NC
A
NC
A
CE2
A
DQPa
NC
DQa
NC
DQa
VDD
NC
DQa
NC
DQa
NC
A
A
NC
VDDQ
NC
NC
NC
DQa
VDDQ
DQa
NC
VDDQ
DQa
NC
VDDQ
NC
DQa
NC
ZZ
VDDQ
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
OE
Pin Name
Output Enable
A0, A1
Synchronous Burst Address Inputs
ZZ
Power Sleep Mode
ADV
MODE
Burst Sequence Selection
ADSP
Synchronous Burst Address
Advance
Address Status Processor
NC
No Connect
ADSC
Address Status Controller
DQa-DQb
Data Inputs/Outputs
GW
Global Write Enable
DQPa-Pb
Output Power Supply
CLK
Synchronous Clock
VDD
Power Supply
CE, CE2, CE2
Synchronous Chip Select
VDDQ
Output Power Supply
BWx (x=a,b)
Synchronous Byte Write Controls
Vss
Ground
BWE
Byte Write Enable
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
5
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
165 PBGA PACKAGE PIN CONFIGURATION
128K X 36 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWc
BWb
CE2
BWE
ADSC
ADV
A
NC
B
NC
A
CE2
BWd
BWa
CLK
GW
OE
ADSP
A
NC
C
DQPc
NC
VDDQ
Vss
Vss
Vss
Vss
Vss
VDDQ
NC
D
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
E
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
F
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
G
DQc
DQc
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQb
DQb
H
NC
NC
NC
VDD
Vss
Vss
Vss
VDD
NC
NC
ZZ
J
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
K
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
L
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
M
DQd
DQd
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
DQa
N
DQPd
NC
VDDQ
Vss
NC
NC
NC
Vss
VDDQ
NC
DQPa
P
NC
NC
A
A
NC
A1*
NC
A
A
A
NC
R
MODE
NC
A
A
NC
A0*
NC
A
A
A
A
DQPb
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
Pin Name
BWE
Byte Write Enable
A0, A1
Synchronous Burst Address Inputs
ADV
OE
Output Enable
ZZ
Power Sleep Mode
ADSP
Synchronous Burst Address
Advance
Address Status Processor
MODE
Burst Sequence Selection
ADSC
Address Status Controller
NC
DQx
DQPx
VDD
VDDQ
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
Vss
Ground
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
BWx (x=a,b,c,d) Synchronous Byte Write
Controls
6
Isolated Output Power Supply
3.3V/2.5V
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
165 PBGA PACKAGE PIN CONFIGURATION
256K X 18 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWb
NC
CE2
BWE
ADSC
ADV
A
A
B
NC
A
CE2
NC
BWa
CLK
GW
OE
ADSP
A
NC
C
NC
NC
VDDQ
Vss
Vss
Vss
Vss
Vss
VDDQ
NC
DQPa
D
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
H
NC
NC
NC
VDD
Vss
Vss
Vss
VDD
NC
NC
ZZ
J
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
L
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
M
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
NC
N
DQPb
NC
VDDQ
Vss
NC
NC
NC
Vss
VDDQ
NC
NC
P
NC
NC
A
A
NC
A1*
NC
A
A
A
NC
R
MODE
NC
A
A
NC
A0*
NC
A
A
A
A
Note: * A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
A
Pin Name
Address Inputs
Symbol
BWE
Byte Write Enable
A0, A1
Synchronous Burst Address Inputs
ADV
OE
Output Enable
ZZ
Power Sleep Mode
ADSP
Synchronous Burst Address
Advance
Address Status Processor
MODE
Burst Sequence Selection
ADSC
Address Status Controller
GW
Global Write Enable
CLK
Synchronous Clock
CE, CE2, CE2
Synchronous Chip Select
No Connect
Data Inputs/Outputs
Data Inputs/Outputs
3.3V/2.5V Power Supply
BWx (x=a,b)
Synchronous Byte Write
Controls
NC
DQx
DQPx
VDD
VDDQ
Vss
Ground
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
Pin Name
Isolated Output Power Supply
3.3V/2.5V
7
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
PIN CONFIGURATION
100-PIN TQFP (128K x 32)
DQPc
DQPb
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
DQPa
NC
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
NC
DQb
DQb
VDDQ
VSS
DQb
DQb
DQb
DQb
VSS
VDDQ
DQb
DQb
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
DQa
DQa
VSS
VDDQ
DQa
DQa
NC
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
DQc
DQc
VDDQ
VSS
DQc
DQc
DQc
DQc
VSS
VDDQ
DQc
DQc
NC
VDD
NC
VSS
DQd
DQd
VDDQ
VSS
DQd
DQd
DQd
DQd
VSS
VDDQ
DQd
DQd
DQPd
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
1
80
2
79
3
78
4
77
5
76
6
75
7
74
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
A
A
CE
CE2
BWd
BWc
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-PIN TQFP (128K x 36)
(3 Chip-Enable option)
(3 Chip-Enable option)
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
Synchronous Data Input/Output
DQPa-DQPd
Parity Data Input/Output
A
Synchronous Address Inputs
GW
Synchronous Global Write Enable
ADSC
Synchronous Controller Address Status
MODE
Burst Sequence Mode Selection
ADSP
Synchronous Processor Address Status
OE
Output Enable
ADV
Synchronous Burst Address Advance
VDD
3.3V/2.5V Power Supply
BWa-BWd
Synchronous Byte Write Enable
VDDQ
BWE
Isolated Output Buffer Supply:
3.3V/2.5V
Synchronous Byte Write Enable
Vss
Ground
ZZ
Snooze Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
8
DQa-DQd
Synchronous Clock
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
PIN CONFIGURATION
A
A
CE
CE2
NC
NC
BWb
BWa
CE2
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
100-PIN TQFP (256K x 18)
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
13
68
14
67
15
66
16
65
17
64
18
63
19
62
20
61
21
60
22
59
23
58
24
57
25
56
26
55
27
54
28
53
29
52
30
51
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
NC
NC
VDDQ
VSS
NC
DQPa
DQa
DQa
VSS
VDDQ
DQa
DQa
VSS
NC
VDD
ZZ
DQa
DQa
VDDQ
VSS
DQa
DQa
NC
NC
VSS
VDDQ
NC
NC
NC
MODE
A
A
A
A
A1
A0
NC
NC
VSS
VDD
NC
NC
A
A
A
A
A
A
A
NC
NC
NC
VDDQ
VSS
NC
NC
DQb
DQb
VSS
VDDQ
DQb
DQb
NC
VDD
NC
VSS
DQb
DQb
VDDQ
VSS
DQb
DQb
DQPb
NC
VSS
VDDQ
NC
NC
NC
(3 Chip-Enable Option)
PIN DESCRIPTIONS
A0, A1
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
ADSC
Synchronous Controller Address Status
ADSP
Synchronous Processor Address Status
ADV
Synchronous Burst Address Advance
BWa-BWb
Synchronous Byte Write Enable
BWE
Synchronous Byte Write Enable
CE, CE2, CE2 Synchronous Chip Enable
CLK
Synchronous Clock
DQa-DQb
Synchronous Data Input/Output
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
DQPa-DQPb
Parity Data I/O; DQPa is parity for
DQa1-8; DQPb is parity for DQb1-8
GW
Synchronous Global Write Enable
MODE
Burst Sequence Mode Selection
OE
Output Enable
VDD
3.3V/2.5V Power Supply
VDDQ
Isolated Output Buffer Supply:
3.3V/2.5V
Vss
Ground
ZZ
Snooze Enable
9
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
TRUTH TABLE(1-8)
ADDRESS CE
OPERATION
CE2
CE2
ZZ ADSP ADSC ADV WRITE OE
CLK
DQ
Deselect Cycle, Power-Down
None
H
X
X
L
X
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
L
X
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
X
L
L
H
L
X
X
X
L-H
High-Z
Deselect Cycle, Power-Down
None
L
H
X
L
H
L
X
X
X
L-H
High-Z
Snooze Mode, Power-Down
None
X
X
X
H
X
X
X
X
X
X
High-Z
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
L
L-H
Q
Read Cycle, Begin Burst
External
L
L
H
L
L
X
X
X
H
L-H
High-Z
Write Cycle, Begin Burst
External
L
L
H
L
H
L
X
L
X
L-H
D
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
L
L-H
Q
Read Cycle, Begin Burst
External
L
L
H
L
H
L
X
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L-H
High-Z
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L-H
Q
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L-H
High-Z
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L-H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L-H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L-H
High-Z
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L-H
Q
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L-H
High-Z
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L-H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L-H
D
NOTE:
1. X means “Don’t Care.” H means logic HIGH. L means logic LOW.
2. For WRITE, L means one or more byte write enable signals (BWa-d) and BWE are LOW or GW is LOW. WRITE = H for all
BWx, BWE, GW HIGH.
3. BWa enables WRITEs to DQa’s and DQPa. BWb enables WRITEs to DQb’s and DQPb. BWc enables WRITEs to DQc’s and
DQPc. BWd enables WRITEs to DQd’s and DQPd. DQPa and DQPb are available on the x18 version. DQPa-DQPd are
available on the x36 version.
4. All inputs except OE and ZZ must meet setup and hold times around the rising edge (LOW to HIGH) of CLK.
5. Wait states are inserted by suspending burst.
6. For a WRITE operation following a READ operation, OE must be HIGH before the input data setup time and held HIGH during
the input data hold time.
7. This device contains circuitry that will ensure the outputs will be in High-Z during power-up.
8. ADSP LOW always initiates an internal READ at the L-H edge of CLK. A WRITE is performed by setting one or more byte write
enable signals and BWE LOW or GW LOW for the subsequent L-H edge of CLK. See WRITE timing diagram for clarification.
PARTIAL TRUTH TABLE
Function
Read
Read
Write Byte 1
Write All Bytes
Write All Bytes
10
GW
BWE
BWa
BWb
BWc
BWd
H
H
H
H
L
H
L
L
L
X
X
H
L
L
X
X
H
H
L
X
X
H
H
L
X
X
H
H
L
X
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to Vss for I/O Pins
Voltage Relative to Vss for
for Address and Control Inputs
VDD
Voltage on VDD Supply Relative to Vss
Value
Unit
–55 to +150
°C
1.6
W
100
mA
–0.5 to VDDQ + 0.5
V
–0.5 to VDD + 0.5
V
–0.5 to 4.6
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
11
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
OPERATING RANGE (IS61/64LFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
3.3V ± 5%
3.3V ± 5%
VDDQ
3.3V/2.5V ± 5%
3.3V/2.5V ± 5%
Automotive
-40°C to +125°C
3.3V ± 5%
3.3V/2.5V ± 5%
OPERATING RANGE (IS61/64VFxxxxx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
2.5V -5% +10%
2.5V -5% +10%
VDDQ
2.5V -5% +10%
2.5V -5% +10%
Automotive
-40°C to +125°C
2.5V -5% +10%
2.5V -5% +10%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
2.4
—
2.0
—
V
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
—
0.4
—
0.4
V
VIH
Input HIGH Voltage
2.0
VDD + 0.3
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
ILI
Input Leakage Current
VSS ≤ VIN ≤ VDD(1)
–5
5
–5
5
µA
ILO
Output Leakage Current
VSS ≤ VOUT ≤ VDDQ, OE = VIH
–5
5
–5
5
µA
12
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter
ICC
AC Operating
Supply Current
Test Conditions
Temp. range
6.5
MAX
x18 x32/x36
7.5
MAX
x18 x32/x36
155
160
175
Device Selected,
OE = VIH, ZZ ≤ VIL,
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
Com.
Ind.
AUTO.
typ.(2)
175
180
190
175
180
190
120
Unit
155
160
175
mA
110
ISB
Standby Current
TTL Input
Device Deselected,
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
Auto.
90
100
120
90
100
120
90
100
120
90
100
120
mA
ISBI
Standby Current
CMOS Input
Device Deselected,
VDD = Max.,
VIN ≤ VSS + 0.2V or ≥VDD – 0.2V
f=0
Com.
Ind.
Auto.
typ.
70
75
90
70
75
90
70
75
90
70
75
90
mA
ZZ>VIH
Com.
Ind.
Auto.
typ.
30
35
45
30
35
45
mA
ISB2
Sleep Mode
40
40
30
35
45
30
35
45
25
25
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100 µA maximum leakage current when tied to ≤
VSS + 0.2V or ≥ VDD – 0.2V.
2. Typical values are measured at VDD = 3.3V, TA = 25oC and not 100% tested.
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
13
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
317 Ω
3.3V
ZO = 50Ω
OUTPUT
50Ω
1.5V
Figure 1
14
OUTPUT
5 pF
Including
jig and
scope
351 Ω
Figure 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
2.5V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
1.5 ns
1.25V
See Figures 3 and 4
2.5V I/O OUTPUT LOAD EQUIVALENT
1,667 Ω
+2.5V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
1,538 Ω
1.25V
Figure 3
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
Figure 4
15
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
6.5
Min.
Max.
7.5
Min. Max.
Symbol
Parameter
fmax
Clock Frequency
—
133
—
117
MHz
tKC
Cycle Time
7.5
—
8.5
—
ns
tKH
Clock High Time
2.2
—
2.5
—
ns
tKL
Clock Low Time
2.2
—
2.5
—
ns
Clock Access Time
—
6.5
—
7.5
ns
tKQ
(2)
tKQX
tKQLZ
Unit
Clock High to Output Invalid
2.5
—
2.5
—
ns
(2,3)
Clock High to Output Low-Z
2.5
—
2.5
—
ns
(2,3)
Clock High to Output High-Z
—
3.8
—
4.0
ns
tKQHZ
tOEQ
Output Enable to Output Valid
—
3.2
—
3.4
ns
(2)
Output Enable to Output Invalid
2.5
—
2.5
—
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
ns
(2,3)
Output Disable to Output High-Z
—
3.5
—
3.5
ns
tAS
Address Setup Time
1.5
—
1.5
—
ns
tWS
Read/Write Setup Time
1.5
—
1.5
—
ns
tCES
Chip Enable Setup Time
1.5
—
1.5
—
ns
tAVS
Address Advance Setup Time
1.5
—
1.5
—
ns
tDS
Data Setup Time
1.5
—
1.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
ns
tAVH
Address Advance Hold Time
0.5
—
0.5
—
ns
tDH
Data Hold Time
0.5
—
0.5
—
ns
tPDS
ZZ High to Power Down
—
2
—
2
cyc
tPUS
ZZ Low to Power Down
—
2
—
2
cyc
tOEQX
tOELZ
tOEHZ
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
16
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
READ/WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE inactive
ADSP
tSS
tSH
ADSC
ADV
tAS
Address
tAH
RD1
RD2
WR1
tWS
tWH
tWS
tWH
RD3
GW
BWE
tWS
tWH
WR1
BWd-BWa
tCES
tCEH
tCES
tCEH
tCES
tCEH
CE Masks ADSP
CE
CE2 and CE2 only sampled with ADSP or ADSC
CE2
Unselected with CE2
CE2
tOEHZ
OE
tKQ
tOEQX
DATAOUT
High-Z
2c
2d
tKQHZ
tKQHZ
High-Z
1a
tDS
Single Read
Flow-through
tDH
Single Write
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
2b
tKQX
tKQX
tKQX
tKQ
DATAIN
2a
1a
tKQLZ
tKQ
Burst Read
Unselected
17
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
WRITE CYCLE TIMING
tKC
CLK
tSS
tSH
tKH
tKL
ADSP is blocked by CE1 inactive
ADSP
ADSC initiate Write
ADSC
ADV must be inactive for ADSP Write tAVS
tAVH
ADV
tAS
Address
tAH
WR1
WR3
WR2
tWS
tWH
tWS
tWH
tWS
tWH
GW
BWE
BWd-BWa
WR1
tCES
tCEH
tCES
tCEH
tCES
tCEH
tWS
tWH
WR2
WR3
CE1 Masks ADSP
CE
Unselected with CE2
CE2 and CE3 only sampled with ADSP or ADSC
CE2
CE2
OE
DATAOUT
High-Z
tDS
DATAIN
High-Z
Single Write
18
tDH
1a
BW4-BW1 only are applied to first cycle of WR2
2a
2b
2c
2d
Burst Write
3a
Write
Unselected
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
SNOOZE MODE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
Max.
Unit
ISB2
Current during SNOOZE MODE
ZZ ≥ Vih
—
60
mA
tPDS
ZZ active to input ignored
—
2
cycle
tPUS
ZZ inactive to input sampled
2
—
cycle
tZZI
ZZ active to SNOOZE current
—
2
cycle
tRZZI
ZZ inactive to exit SNOOZE current
0
—
ns
SNOOZE MODE TIMING
CLK
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All Inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
19
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
ORDERING INFORMATION (VDD = 3.3V/VDDQ = 2.5V/3.3V)
Commercial Range: 0°C to +70°C
Configuration
Access Time
Order Part Number
Package
128Kx32
6.5
IS61LF12832A-6.5TQ
IS61LF12832A-6.5B2
IS61LF12832A-6.5B3
100 TQFP
119 PBGA
165 PBGA
128Kx32
7.5
IS61LF12832A-7.5TQ
IS61LF12832A-7.5B2
100 TQFP
119 PBGA
IS61LF12832A-7.5B3
165 PBGA
128Kx36
6.5
IS61LF12836A-6.5TQ
IS61LF12836A-6.5B2
IS61LF12836A-6.5B3
100 TQFP
119 PBGA
165 PBGA
128Kx36
7.5
IS61LF12836A-7.5TQ
IS61LF12836A-7.5B2
100 TQFP
119 PBGA
IS61LF12836A-7.5B3
165 PBGA
256Kx18
6.5
IS61LF25618A-6.5TQ
IS61LF25618A-6.5B2
IS61LF25618A-6.5B3
100 TQFP
119 PBGA
165 PBGA
256Kx18
7.5
IS61LF25618A-7.5TQ
IS61LF25618A-7.5B2
IS61LF25618A-7.5B3
100 TQFP
119 PBGA
165 PBGA
20
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
ORDERING INFORMATION (VDD = 3.3V/VDDQ = 2.5V/3.3V)
Industrial Range: -40°C to +85°C
Configuration
Access Time
Order Part Number
Package
128Kx32
6.5
IS61LF12832A-6.5TQI
IS61LF12832A-6.5B2I
IS61LF12832A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
128Kx32
7.5
IS61LF12832A-7.5TQI
IS61LF12832A-7.5TQLI
IS61LF12832A-7.5B2I
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61LF12832A-7.5B3I
165 PBGA
128Kx36
6.5
IS61LF12836A-6.5TQI
IS61LF12836A-6.5B2I
IS61LF12836A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
128Kx36
7.5
IS61LF12836A-7.5TQI
IS61LF12836A-7.5TQLI
IS61LF12836A-7.5B2I
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61LF12836A-7.5B3I
165 PBGA
256Kx18
6.5
IS61LF25618A-6.5TQI
IS61LF25618A-6.5B2I
IS61LF25618A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
256Kx18
7.5
IS61LF25618A-7.5TQI
IS61LF25618A-7.5TQLI
IS61LF25618A-7.5B2I
IS61LF25618A-7.5B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
Order Part Number
Package
Automotive Range: -40°C to +125°C
Configuration
Access Time
128Kx32
7.5
IS64LF12832A-7.5TQA3
IS64LF12832A-7.5TQLA3
100 TQFP
100 TQFP, Lead-free
128Kx36
7.5
IS64LF12836A-7.5TQA3
100 TQFP
256Kx18
7.5
IS64LF25618A-7.5TQA3
100 TQFP
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
21
IS61(64)LF12832A, IS61(64)LF12836A, IS61(64)LF25618A
IS64VF12832A, IS61(64)VF12836A, IS61(64)VF25618A
ISSI
®
ORDERING INFORMATION (VDD = 2.5V /VDDQ = 2.5V)
Commercial Range: 0°C to +70°C
Configuration
Access Time
Order Part Number
Package
128Kx36
6.5
IS61VF12836A-6.5TQ
IS61VF12836A-6.5B2
IS61VF12836A-6.5B3
100 TQFP
119 PBGA
165 PBGA
128Kx36
7.5
IS61VF12836A-7.5TQ
IS61VF12836A-7.5B2
100 TQFP
119 PBGA
IS61VF12836A-7.5B3
165 PBGA
256Kx18
6.5
IS61VF25618A-6.5TQ
IS61VF25618A-6.5B2
IS61VF25618A-6.5B3
100 TQFP
119 PBGA
165 PBGA
256Kx18
7.5
IS61VF25618A-7.5TQ
IS61VF25618A-7.5B2
100 TQFP
119 PBGA
IS61VF25618A-7.5B3
165 PBGA
Industrial Range: -40°C to +85°C
Configuration
Access Time
Order Part Number
Package
128Kx36
6.5
IS61VF12836A-6.5TQI
IS61VF12836A-6.5B2I
IS61VF12836A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
128Kx36
7.5
IS61VF12836A-7.5TQI
IS61VF12836A-7.5B2I
IS61VF12836A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
256Kx18
6.5
IS61VF25618A-6.5TQI
IS61VF25618A-6.5B2I
IS61VF25618A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
256Kx18
7.5
IS61VF25618A-7.5TQI
IS61VF25618A-7.5B2I
IS61VF25618A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
Automotive Range: -40°C to +125°C
Configuration
Access Time
Order Part Number
128Kx32
7.5
IS64VF12832A-7.5TQLA3
100 TQFP, Lead-free
128Kx36
7.5
IS64VF12836A-7.5TQA3
100 TQFP
256Kx18
7.5
IS64VF25618A-7.5TQA3
100 TQFP
22
Package
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00A
08/11/05
ISSI
PACKAGING INFORMATION
®
Plastic Ball Grid Array
Package Code: B (119-pin)
φ b (119X)
E
A
7
6
5
4
D2
D1
e
A2
A3
E2
Sym.
Min.
N0.
Leads
Max.
SEATING PLANE
INCHES
Min.
Max.
Notes:
119
A
—
2.41
—
0.095
A1
0.50
0.70
0.020
0.028
A2
0.80
1.00
0.032
0.039
A3
1.30
1.70
0.051
0.067
A4
0.56 BSC
0.60
0.90
0.024
0.035
D
21.80
22.20
0.858
0.874
20.32 BSC
0.800 BSC
D2
19.40
19.60
0.764
0.772
E
13.80
14.20
0.543
0.559
E1
E2
e
7.62 BSC
11.90
12.10
1.27 BSC
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protrusion and
should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within
0.004 inches at the seating plane.
0.022 BSC
b
D1
E1
A1
A4
MILLIMETERS
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
30ϒ
D
3 2
0.300 BSC
0.469
0.476
0.050 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/12/03
ISSI
PACKAGING INFORMATION
®
Ball Grid Array
Package Code: B (165-pin)
BOTTOM VIEW
TOP VIEW
A1 CORNER
1
2
3
4
A1 CORNER
φ b (165X)
5
6
7
8
9
10
11 10
11
9
8
7
6
5
4
3
2
1
A
A
B
B
C
C
D
D
E
E
e
F
F
G
G
D D1
H
H
J
J
K
K
L
L
M
M
N
N
P
P
R
R
e
E1
E
A2
A
A1
BGA - 13mm x 15mm
MILLIMETERS
Sym.
Min.
N0.
Leads
Nom. Max.
Notes:
1. Controlling dimensions are in millimeters.
INCHES
Min.
165
Nom. Max.
165
A
—
—
1.20
—
A1
0.25
0.33
0.40
0.010
—
0.047
0.013 0.016
A2
—
0.79
—
—
0.031
—
D
14.90
15.00
15.10
0.587
0.591
0.594
D1
13.90
14.00
14.10
0.547
0.551
0.555
E
12.90
13.00
13.10
0.508
0.512
0.516
E1
9.90
10.00
10.10
0.390
0.394
0.398
e
—
1.00
—
—
0.039
—
b
0.40
0.45
0.50
0.016
0.018
0.020
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
06/11/03
ISSI
PACKAGING INFORMATION
TQFP (Thin Quad Flat Pack Package)
Package Code: TQ
D
D1
E
E1
N
L1
L
C
1
e
SEATING
PLANE
A2
A
b
A1
Thin Quad Flat Pack (TQ)
Inches
Millimeters
Min
Max
Min
Max
Millimeters
Symbol Min
Max
Ref. Std.
No. Leads (N)
100
A
—
1.60
—
0.063
A1
0.05 0.15
0.002 0.006
A2
1.35 1.45
0.053 0.057
b
0.22 0.38
0.009 0.015
D
21.90 22.10
0.862 0.870
D1
19.90 20.10
0.783 0.791
E
15.90 16.10
0.626 0.634
E1
13.90 14.10
0.547 0.555
e
0.65 BSC
0.026 BSC
L
0.45 0.75
0.018 0.030
L1
1.00 REF.
0.039 REF.
C
0o
7o
0o
7o
128
—
1.60
0.05 0.15
1.35 1.45
0.17 0.27
21.80 22.20
19.90 20.10
15.80 16.20
13.90 14.10
0.50 BSC
0.45 0.75
1.00 REF.
0o
7o
Integrated Silicon Solution, Inc. — 1-800-379-4774
PK13197LQ Rev. D 05/08/03
Inches
Min
Max
—
0.063
0.002 0.006
0.053 0.057
0.007 0.011
0.858 0.874
0.783 0.791
0.622 0.638
0.547 0.555
0.020 BSC
0.018 0.030
0.039 REF.
0o
7o
Notes:
1. All dimensioning and
tolerancing conforms to
ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do
not include mold protrusions.
Allowable protrusion is 0.25
mm per side. D1 and E1 do
include mold mismatch and
are determined at datum
plane -H-.
3. Controlling dimension:
millimeters.
®
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