ISSI IS61NLF25636A-7.5TQ 256k x 36 and 512k x 18 9mb, flow through (no wait) state bus sram Datasheet

IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
256K x 36 and 512K x 18
9Mb, FLOW THROUGH 'NO WAIT'
STATE BUS SRAM
ISSI
®
AUGUST 2005
FEATURES
DESCRIPTION
• 100 percent bus utilization
The 9 Meg 'NLF/NVF' product family feature high-speed,
low-power synchronous static RAMs designed to provide
a burstable, high-performance, 'no wait' state, device for
networking and communications applications. They are
organized as 256K words by 36 bits and 512K words by 18
bits, fabricated with ISSI's advanced CMOS technology.
• No wait cycles between Read and Write
• Internal self-timed write cycle
• Individual Byte Write Control
• Single Read/Write control pin
• Clock controlled, registered address,
data and control
• Interleaved or linear burst sequence control using
MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Power Down mode
• Common data inputs and data outputs
• CKE pin to enable clock and suspend operation
• JEDEC 100-pin TQFP, 119-ball PBGA, and 165ball PBGA packages
Incorporating a 'no wait' state feature, wait cycles are
eliminated when the bus switches from read to write, or
write to read. This device integrates a 2-bit burst counter,
high-speed SRAM core, and high-drive capability outputs
into a single monolithic circuit.
All synchronous inputs pass through registers are controlled
by a positive-edge-triggered single clock input. Operations
may be suspended and all synchronous inputs ignored
when Clock Enable, CKE is HIGH. In this state the internal
device will hold their previous values.
All Read, Write and Deselect cycles are initiated by the
ADV input. When the ADV is HIGH the internal burst
counter is incremented. New external addresses can be
loaded when ADV is LOW.
• Power supply:
NVF: VDD 2.5V (± 5%), VDDQ 2.5V (± 5%)
NLF: VDD 3.3V (± 5%), VDDQ 3.3V/2.5V (± 5%)
Write cycles are internally self-timed and are initiated by
the rising edge of the clock inputs and when WE is LOW.
Separate byte enables allow individual bytes to be written.
• JTAG Boundary Scan for PBGA packages
A burst mode pin (MODE) defines the order of the burst
sequence. When tied HIGH, the interleaved burst sequence
is selected. When tied LOW, the linear burst sequence is
selected.
• Industrial temperature available
• Lead-free available
FAST ACCESS TIME
Symbol
tKQ
tKC
Parameter
Clock Access Time
Cycle Time
Frequency
6.5
6.5
7.5
133
7.5
7.5
8.5
117
Units
ns
ns
MHz
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
1
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
BLOCK DIAGRAM
x 36: A [0:17] or
x 18: A [0:18]
ADDRESS
REGISTER
A2-A17 or A2-A18
MODE
A0-A1
CLK
CONTROL
LOGIC
K
CKE
WRITE
ADDRESS
REGISTER
256Kx36;
512Kx18
MEMORY ARRAY
BURST
ADDRESS
COUNTER
A'0-A'1
WRITE
ADDRESS
REGISTER
K
DATA-IN
REGISTER
K
DATA-IN
REGISTER
CE
CE2
CE2
ADV
WE
BWŸX
}
CONTROL
REGISTER
K
CONTROL
LOGIC
(X= a-d, or a,b)
BUFFER
OE
ZZ
36 or 18
DQx/DQPx
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
Bottom View
165-Ball, 13 mm x 15mm BGA
Bottom View
119-Ball, 14 mm x 22 mm BGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
3
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
PIN CONFIGURATION — 256K X 36, 165-Ball PBGA (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
CE
BWc
BWb
CE2
CKE
ADV
A
A
NC
B
NC
A
CE2
BWd
BWa
CLK
WE
OE
NC
A
NC
C
DQPc
NC
VDDQ
V SS
V SS
V SS
V SS
V SS
VDDQ
NC
DQPb
D
DQc
DQc
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQb
DQb
E
DQc
DQc
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQb
DQb
F
DQc
DQc
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQb
DQb
G
DQc
DQc
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQb
DQb
H
NC
NC
NC
VDD
V SS
V SS
V SS
VDD
NC
NC
ZZ
J
DQd
DQd
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQa
DQa
K
DQd
DQd
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQa
DQa
L
DQd
DQd
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQa
DQa
M
DQd
DQd
VDDQ
VDD
V SS
V SS
V SS
VDD
VDDQ
DQa
DQa
N
DQPd
NC
VDDQ
V SS
NC
NC
NC
V SS
VDDQ
NC
DQPa
P
NC
NC
A
A
TDI
A1*
TDO
A
A
A
NC
R
MODE
NC
A
A
TMS
A0*
TCK
A
A
A
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
MODE
Burst Sequence Selection
A
Address Inputs
JTAG Pins
A0, A1
Synchronous Burst Address Inputs
TCK, TDI
TDO, TMS
ADV
Synchronous Burst Address Advance/
Load
VDD
3.3V/2.5V Power Supply
NC
No Connect
WE
Synchronous Read/Write Control Input
DQx
Data Inputs/Outputs
CLK
Synchronous Clock
DQPx
Parity Data I/O
CKE
Clock Enable
V DDQ
Isolated output Power Supply
3.3V/2.5V
VSS
Ground
CE, CE2, CE2 Synchronous Chip Enable
4
BWx (x=a-d)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
119-PIN PBGA PACKAGE CONFIGURATION
ISSI
®
256K x 36 (TOP VIEW)
1
2
3
4
5
6
7
A
VDDQ
A
A
NC
A
A
VDDQ
B
NC
CE2
A
ADV
A
CE2
NC
C
NC
A
A
VDD
A
A
NC
D
DQc
DQPc
VSS
NC
Vss
DQPb
DQb
E
DQc
DQc
VSS
CE
Vss
DQb
DQb
F
VDDQ
DQc
VSS
OE
Vss
DQb
VDDQ
G
DQc
DQc
BWc
A
BWb
DQb
DQb
H
DQc
DQc
VSS
WE
Vss
DQb
DQb
J
VDDQ
VDD
NC
VDD
NC
VDD
VDDQ
K
DQd
DQd
VSS
CLK
Vss
DQa
DQa
L
DQd
DQd
BWd
NC
BWa
DQa
DQa
M
VDDQ
DQd
VSS
CKE
Vss
DQa
VDDQ
N
DQd
DQd
VSS
A1 *
Vss
DQa
DQa
P
DQd
DQPd
VSS
A0 *
Vss
DQPa
DQa
R
NC
A
MODE
VDD
NC
A
NC
T
NC
NC
A
A
A
NC
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
OE
Output Enable
A
Address Inputs
ZZ
Power Sleep Mode
A0, A1
Synchronous Burst Address Inputs
MODE
Burst Sequence Selection
ADV
Synchronous Burst Address Advance/
Load
TCK, TDO
TMS, TDI
JTAG Pins
WE
Synchronous Read/Write Control Input
VDD
Power Supply
CLK
Synchronous Clock
VSS
Ground
CKE
Clock Enable
NC
No Connect
CE
Synchronous Chip Select
DQa-DQd
Data Inputs/Outputs
CE2
Synchronous Chip Select
DQPa-Pd
Parity Data I/O
CE2
Synchronous Chip Select
VDDQ
Output Power Supply
BWx (x=a-d)
Synchronous Byte Write Inputs
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
5
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
165-PIN PBGA PACKAGE CONFIGURATION
®
512K x 18 (TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
A
NC
A
BWb
NC
CE2
CKE
ADV
B
NC
A
CE
CE2
A
NC
A
A
C
NC
NC
VDDQ
NC
Vss
BWa
Vss
CLK
Vss
WE
Vss
D
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
OE
Vss
VDD
A
VDDQ
NC
NC
DQPa
VDDQ
NC
DQa
E
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
F
NC
DQb
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
NC
DQa
G
NC
DQb
VDDQ
Vss
H
NC
NC
NC
VDD
VDD
Vss
Vss
Vss
Vss
VDD
VDD
VDDQ
NC
DQa
J
DQb
NC
VDDQ
VDD
Vss
Vss
NC
NC
ZZ
Vss
Vss
VDD
VDDQ
DQa
NC
K
DQb
NC
VDDQ
VDD
Vss
Vss
Vss
VDD
VDDQ
DQa
VDD
Vss
Vss
VDD
VDDQ
DQa
VDDQ
VDD
Vss
Vss
Vss
NC
NC
L
DQb
NC
VDDQ
M
DQb
NC
Vss
VDD
VDDQ
DQa
NC
N
DQPb
NC
Vss
A
NC
TDI
NC
NC
Vss
NC
TDO
A
A
NC
NC
A
A
TMS
A1*
A0*
VDDQ
A
NC
NC
VDDQ
A
P
NC
R
MODE
TCK
A
A
A
A
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
MODE
Burst Sequence Selection
A
Address Inputs
JTAG Pins
A0, A1
Synchronous Burst Address Inputs
TCK, TDI
TDO, TMS
ADV
Synchronous Burst Address Advance/
Load
VDD
3.3V/2.5V Power Supply
NC
No Connect
WE
Synchronous Read/Write Control Input
DQx
Data Inputs/Outputs
CLK
Synchronous Clock
DQPx
Parity Data I/O
CKE
Clock Enable
V DDQ
Isolated output Power Supply
3.3V/2.5V
VSS
Ground
CE, CE2, CE2 Synchronous Chip Enable
6
BWx (x=a,b)
Synchronous Byte Write Inputs
OE
Output Enable
ZZ
Power Sleep Mode
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
119-PIN PBGA PACKAGE CONFIGURATION
ISSI
®
512K x 18 (TOP VIEW)
1
2
3
4
5
6
7
A
VDDQ
A
A
NC
A
A
VDDQ
B
NC
CE2
A
ADV
A
CE2
NC
C
NC
A
A
VDD
A
A
NC
D
DQb
NC
VSS
NC
Vss
DQPa
NC
E
DQb
VSS
CE
Vss
NC
DQa
F
NC
VDDQ
NC
VSS
OE
Vss
DQa
VDDQ
G
NC
DQb
BWb
A
NC
NC
DQa
H
DQb
NC
WE
Vss
DQa
NC
J
VDDQ
VDD
VSS
NC
VDD
NC
VDD
VDDQ
K
NC
DQb
VSS
CLK
Vss
NC
DQa
L
DQb
NC
NC
NC
BWa
DQa
NC
M
VDDQ
DQb
VSS
CKE
Vss
NC
VDDQ
N
DQb
NC
VSS
A1 *
Vss
DQa
NC
P
NC
DQPb
VSS
A0 *
Vss
NC
DQa
R
NC
A
MODE
VDD
NC
A
NC
T
NC
A
A
NC
A
A
ZZ
U
VDDQ
TMS
TDI
TCK
TDO
NC
VDDQ
Note: A0 and A1 are the two least significant bits (LSB) of the address field and set the internal burst counter if burst is desired.
PIN DESCRIPTIONS
Symbol
Pin Name
OE
Output Enable
A
Address Inputs
ZZ
Power Sleep Mode
A0, A1
Synchronous Burst Address Inputs
MODE
Burst Sequence Selection
ADV
Synchronous Burst Address Advance/
Load
TCK, TDO
TMS, TDI
JTAG Pins
WE
Synchronous Read/Write Control Input
VDD
Power Supply
CLK
Synchronous Clock
VSS
Ground
CKE
Clock Enable
NC
No Connect
CE
Synchronous Chip Select
DQa-DQb
Data Inputs/Outputs
CE2
Synchronous Chip Select
DQPa-Pb
Parity Data I/O
CE2
Synchronous Chip Select
VDDQ
Output Power Supply
BWx (x=a,b)
Synchronous Byte Write Inputs
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
7
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
PIN CONFIGURATION
DQb
DQa
DQb
VDDQ
VDDQ
Vss
DQa
Vss
DQb
DQa
DQb
DQa
DQa
Vss
DQPb
NC
VDDQ
VDDQ
DQa
DQa
DQPa
NC
NC
NC
Vss
A
ADV
NC
OE
CKE
CLK
WE
CE2
VDD
Vss
BWa
NC
BWb
NC
CE2
CE
A
A
A
NC
NC
VDDQ
Vss
NC
DQPa
DQa
DQa
Vss
VDDQ
DQa
DQa
Vss
NC
VDD
ZZ
DQa
DQa
VDDQ
Vss
DQa
DQa
NC
NC
Vss
VDDQ
NC
NC
NC
A
A
DQa
NC
Vss
A
DQb
NC
VDD
A
DQb
DQb
Vss
NC
VDD
ZZ
A
DQb
A
VDDQ
NC
A
Vss
VDDQ
NC
DQb
Vss
Vss
DQb
VDD
DQb
NC
NC
NC
NC
DQb
Vss
A1
A0
MODE
DQd
DQd
DQPd
DQb
DQb
VDDQ
A
VDDQ
Vss
NC
A
DQd
DQd
Vss
VDDQ
NC
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
DQd
DQb
NC
A
Vss
DQd
DQb
MODE
VDDQ
DQPb
A
A
DQd
A
DQd
A
NC
Vss
A
DQc
NC
VDD
A
DQc
NC
A
VDDQ
NC
Vss
VDD
DQc
Vss
DQc
NC
NC
DQc
DQc
A1
A0
Vss
A
VDDQ
A
DQc
A
DQc
100 99 98 97 96 95 94 93 92 91 90 89 88 87 86 85 84 83 82 81
80
1
79
2
78
3
77
4
76
5
75
6
74
7
73
8
72
9
71
10
70
11
69
12
68
13
67
14
66
15
65
16
64
17
63
18
62
19
61
20
60
21
59
22
58
23
57
24
56
25
55
26
54
27
53
28
52
29
51
30
31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50
A
DQPc
A
A
A
A
A
OE
ADV
NC
CKE
CLK
WE
CE2
VDD
Vss
BWa
BWc
BWb
BWd
CE2
CE
A
A
100-Pin TQFP
512K x 18
256K x 36
PIN DESCRIPTIONS
A0, A1
8
Synchronous Address Inputs. These
pins must tied to the two LSBs of the
address bus.
A
Synchronous Address Inputs
CLK
Synchronous Clock
ADV
Synchronous Burst Address Advance
BWa-BWd
Synchronous Byte Write Enable
WE
Write Enable
CKE
Clock Enable
Vss
Ground for Core
NC
Not Connected
CE, CE2, CE2 Synchronous Chip Enable
OE
Output Enable
DQa-DQd
Synchronous Data Input/Output
DQPa-DQPd
Parity Data I/O
MODE
Burst Sequence Selection
VDD
+3.3V/2.5V Power Supply
VSS
Ground for output Buffer
VDDQ
Isolated Output Buffer Supply: +3.3V/2.5V
ZZ
Snooze Enable
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
STATE DIAGRAM
READ
READ
READ
BURST
WRITE
BEGIN
READ
DS
READ
WRITE
DESELECT
BURST
BURST
READ
BEGIN
WRITE
DS
BURST
DS
BURST
DS
DS
WRITE
BURST
WRITE
READ
WRITE
WRITE
BURST
SYNCHRONOUS TRUTH TABLE(1)
Operation
Not Selected
Not Selected
Not Selected
Not Selected Continue
Begin Burst Read
Continue Burst Read
NOP/Dummy Read
Dummy Read
Begin Burst Write
Continue Burst Write
NOP/Write Abort
Write Abort
Ignore Clock
Notes:
Address
Used
CE
CE2
CE
CE2
ADV
WE
BW
BWx
OE
CKE
CLK
N/A
N/A
N/A
N/A
External Address
Next Address
External Address
Next Address
External Address
Next Address
N/A
Next Address
Current Address
H
X
X
X
L
X
L
X
L
X
L
X
X
X
L
X
X
H
X
H
X
H
X
H
X
X
X
X
H
X
L
X
L
X
L
X
L
X
X
L
L
L
H
L
H
L
H
L
H
L
H
X
X
X
X
X
H
X
H
X
L
X
L
X
X
X
X
X
X
X
X
X
X
L
L
H
H
X
X
X
X
X
L
L
H
H
X
X
X
X
X
L
L
L
L
L
L
L
L
L
L
L
L
H
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
↑
1.
2.
3.
4.
"X" means don't care.
The rising edge of clock is symbolized by ↑
A continue deselect cycle can only be entered if a deselect cycle is executed first.
WE = L means Write operation in Write Truth Table.
WE = H means Read operation in Write Truth Table.
5. Operation finally depends on status of asynchronous pins (ZZ and OE).
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
9
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
ASYNCHRONOUS TRUTH TABLE(1)
Operation
ZZ
OE
I/O STATUS
Sleep Mode
H
L
L
L
L
X
L
H
X
X
High-Z
DQ
High-Z
Din, High-Z
High-Z
Read
Write
Deselected
Notes:
1. X means "Don't Care".
2. For write cycles following read cycles, the output buffers must be disabled with OE, otherwise data bus
contention will occur.
3. Sleep Mode means power Sleep Mode where stand-by current does not depend on cycle time.
4. Deselected means power Sleep Mode where stand-by current depends on cycle time.
WRITE TRUTH TABLE (x18)
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE ALL BYTEs
WRITE ABORT/NOP
Notes:
WE
BW
BWa
BW
BWb
H
L
L
L
L
X
L
H
L
H
X
H
L
L
H
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
10
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
WRITE TRUTH TABLE (x36)
Operation
READ
WRITE BYTE a
WRITE BYTE b
WRITE BYTE c
WRITE BYTE d
WRITE ALL BYTEs
WRITE ABORT/NOP
Notes:
WE
BW
BWa
BW
BWb
BW
BWc
BW
BWd
H
L
L
L
L
L
L
X
L
H
H
H
L
H
X
H
L
H
H
L
H
X
H
H
L
H
L
H
X
H
H
H
L
L
H
1. X means "Don't Care".
2. All inputs in this table must beet setup and hold time around the rising edge of CLK.
INTERLEAVED BURST ADDRESS TABLE (MODE = VDD or NC)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
11
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
LINEAR BURST ADDRESS TABLE (MODE = VSS)
0,0
A1', A0' = 1,1
0,1
1,0
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
TSTG
PD
IOUT
VIN, VOUT
VIN
Parameter
Storage Temperature
Power Dissipation
Output Current (per I/O)
Voltage Relative to VSS for I/O Pins
Voltage Relative to VSS for
for Address and Control Inputs
Value
–65 to +150
1.6
100
–0.5 to VDDQ + 0.3
–0.3 to 4.6
Unit
°C
W
mA
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages or electric fields; however,
precautions may be taken to avoid application of any voltage higher than maximum rated voltages to this high-impedance
circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
OPERATING RANGE (IS61NLFx)
Range
Commercial
Industrial
12
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
3.3V ± 5%
3.3V ± 5%
VDDQ
3.3V / 2.5V ± 5%
3.3V / 2.5V ± 5%
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
OPERATING RANGE (IS61NVFx)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
-40°C to +85°C
VDD
2.5V ± 5%
2.5V ± 5%
VDDQ
2.5V ± 5%
2.5V ± 5%
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
3.3V
2.5V
Symbol
Parameter
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
IOH = –4.0 mA (3.3V)
IOH = –1.0 mA (2.5V)
2.4
—
2.0
—
V
VOL
Output LOW Voltage
IOL = 8.0 mA (3.3V)
IOL = 1.0 mA (2.5V)
—
0.4
—
0.4
V
VIH
Input HIGH Voltage
2.0
VDD + 0.3
1.7
VDD + 0.3
V
VIL
Input LOW Voltage
–0.3
0.8
–0.3
0.7
V
ILI
Input Leakage Current
VSS ≤ VIN ≤ VDD
–5
5
–5
5
µA
ILO
Output Leakage Current
VSS ≤ VOUT ≤ VDDQ, OE = VIH
–5
5
–5
5
µA
(1)
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Temp. range
6.5
MAX
x18
x36
7.5
MAX
x18
x36
Symbol Parameter
Test Conditions
ICC
AC Operating
Supply Current
Device Selected,
Com.
OE = VIH, ZZ ≤ VIL,
Ind.
All Inputs ≤ 0.2V or ≥ VDD – 0.2V,
Cycle Time ≥ tKC min.
280
300
280
300
270
280
270
280
mA
ISB
Standby Current
TTL Input
Device Deselected,
VDD = Max.,
All Inputs ≤ VIL or ≥ VIH,
ZZ ≤ VIL, f = Max.
Com.
Ind.
100
100
100
100
100
100
100
100
mA
ISBI
Standby Current
CMOS Input
Device Deselected,
Com.
VDD = Max.,
Ind.
VIN ≤ VSS + 0.2V or ≥ VDD – 0.2V
f=0
70
80
70
80
70
80
70
80
mA
ISB2
Sleep Mode
ZZ > VIH
45
50
45
50
45
50
45
50
mA
Com.
Ind.
Unit
Note:
1. MODE pin has an internal pullup and should be tied to VDD or VSS. It exhibits ±100 µA maximum leakage current when tied to
≤ VSS + 0.2V or ≥ VDD – 0.2V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
13
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Input/Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, VDD = 3.3V.
3.3V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 3.0V
1.5 ns
1.5V
See Figures 1 and 2
3.3V I/O OUTPUT LOAD EQUIVALENT
317 Ω
+3.3V
Zo= 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
351 Ω
1.5V
Figure 1
14
Figure 2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
2.5V I/O AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level
Output Load
Unit
0V to 2.5V
1.5 ns
1.25V
See Figures 3 and 4
2.5V I/O OUTPUT LOAD EQUIVALENT
1,667 Ω
+2.5V
ZO = 50Ω
OUTPUT
OUTPUT
50Ω
5 pF
Including
jig and
scope
1,538 Ω
1.25V
Figure 3
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
Figure 4
15
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
READ/WRITE CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
6.5
Min.
Max.
7.5
Min. Max.
Symbol
Parameter
fmax
Clock Frequency
—
133
—
117
MHz
tKC
Cycle Time
7.5
—
8.5
—
ns
tKH
Clock High Time
2.2
—
2.5
—
ns
tKL
Clock Low Time
2.2
—
2.5
—
ns
Clock Access Time
—
6.5
—
7.5
ns
Clock High to Output Invalid
2.5
—
2.5
—
ns
tKQLZ
Clock High to Output Low-Z
2.5
—
2.5
—
ns
tKQHZ(2,3)
Clock High to Output High-Z
—
3.8
—
4.0
ns
tOEQ
tKQ
tKQX
(2)
(2,3)
Unit
Output Enable to Output Valid
—
3.2
—
3.4
ns
(2,3)
Output Enable to Output Low-Z
0
—
0
—
ns
(2,3)
tOEHZ
Output Disable to Output High-Z
—
3.5
—
3.5
ns
tAS
Address Setup Time
1.5
—
1.5
—
ns
tWS
Read/Write Setup Time
1.5
—
1.5
—
ns
tCES
Chip Enable Setup Time
1.5
—
1.5
—
ns
tSE
Clock Enable Setup Time
1.5
—
1.5
—
ns
tADVS
Address Advance Setup Time
1.5
—
1.5
—
ns
tDS
Data Setup Time
1.5
—
1.5
—
ns
tAH
Address Hold Time
0.5
—
0.5
—
ns
tHE
Clock Enable Hold Time
0.5
—
0.5
—
ns
tWH
Write Hold Time
0.5
—
0.5
—
ns
tCEH
Chip Enable Hold Time
0.5
—
0.5
—
ns
tADVH
Address Advance Hold Time
0.5
—
0.5
—
ns
tDH
Data Hold Time
0.5
—
0.5
—
ns
tPDS
ZZ High to Power Down
—
2
—
2
cyc
tPUS
ZZ Low to Power Down
—
2
—
2
cyc
tOELZ
Notes:
1. Configuration signal MODE is static and must not change during normal operation.
2. Guaranteed but not 100% tested. This parameter is periodically sampled.
3. Tested with load in Figure 2.
16
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
SLEEP MODE ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
Min.
ISB2
Current during SLEEP MODE
tPDS
ZZ active to input ignored
tPUS
ZZ inactive to input sampled
2
cycle
tZZI
ZZ active to SLEEP current
2
cycle
tRZZI
ZZ inactive to exit SLEEP current
0
ns
ZZ ≥ VIH
Max.
Unit
60
mA
2
cycle
SLEEP MODE TIMING
CLK
tPDS
ZZ setup cycle
tPUS
ZZ recovery cycle
ZZ
tZZI
Isupply
ISB2
tRZZI
All Inputs
(except ZZ)
Deselect or Read Only
Deselect or Read Only
Normal
operation
cycle
Outputs
(Q)
High-Z
Don't Care
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
17
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
READ CYCLE TIMING
tKH tKL
CLK
tKC
tADVS tADVH
ADV
tAS tAH
Address
A1
A3
A2
tWS tWH
WRITE
tSE tHE
CKE
tCES tCEH
CE
OE
tOEQ
tOEHZ
tDS
tKQ
tKQHZ
tOEHZ
Data Out
Q1-1
Q2-1
Q2-2
Q2-3
NOTES: WRITE = L means WE = L and BWx = L
WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
18
Q2-4
Q3-1
Q3-2
Q3-3
Q3-4
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
WRITE CYCLE TIMING
tKH tKL
CLK
tKC
ADV
Address
A1
A3
A2
WRITE
tSE tHE
CKE
CE
OE
tDS
Data In
D1-1
D2-1
D2-2
D2-3
D2-4
D3-1
tDH
D3-2
D3-3
D3-4
tOEHZ
Data Out
Q0-4
NOTES: WRITE = L means WE = L and BWx = L
WE = L and BWX = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
Don't Care
Undefined
19
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
SINGLE READ/WRITE CYCLE TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
A6
A7
A8
A9
WRITE
CE
ADV
OE
tOEQ
tOELZ
Data Out
Q1
Q3
Q4
Q6
Q7
tDS tDH
Data In
D5
D2
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
20
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
CKE OPERATION TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
A6
WRITE
CE
ADV
OE
tKQ
tKQHZ
tKQLZ
Data Out
Q1
Q3
Q4
tDS tDH
Data In
D2
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
D5
Don't Care
Undefined
21
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
CE OPERATION TIMING
tKH
tKL
CLK
tSE tHE
tKC
CKE
Address
A1
A2
A3
A4
A5
WRITE
CE
ADV
OE
tOEQ
tKQHZ
tKQ
tKQLZ
tOELZ
Data Out
Q1
Q2
Q4
tDS tDH
Data In
D3
NOTES: WRITE = L means WE = L and BWx = L
CE = L means CE1 = L, CE2 = H and CE2 = L
CE = H means CE1 = H, or CE1 = L and CE2 = H, or CE1 = L and CE2 = L
22
D5
Don't Care
Undefined
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
IEEE 1149.1 SERIAL BOUNDARY SCAN (JTAG)
TEST ACCESS PORT (TAP) - TEST CLOCK
The IS61NLFX and IS61NVFX have a serial boundary scan
Test Access Port (TAP) in the PBGA package only. (Not
available in TQFP package.) This port operates in accordance with IEEE Standard 1149.1-1900, but does not
include all functions required for full 1149.1 compliance.
These functions from the IEEE specification are excluded
because they place added delay in the critical speed path
of the SRAM. The TAP controller operates in a manner that
does not conflict with the performance of other devices
using 1149.1 fully compliant TAPs. The TAP operates using
JEDEC standard 2.5V I/O logic levels.
The test clock is only used with the TAP controller. All
inputs are captured on the rising edge of TCK and outputs
are driven from the falling edge of TCK.
DISABLING THE JTAG FEATURE
The SRAM can operate without using the JTAG feature. To
disable the TAP controller, TCK must be tied LOW (VSS) to
prevent clocking of the device. TDI and TMS are internally
pulled up and may be disconnected. They may alternately
be connected to VDD through a pull-up resistor. TDO should
be left disconnected. On power-up, the device will start in a
reset state which will not interfere with the device operation.
TEST MODE SELECT (TMS)
The TMS input is used to send commands to the TAP
controller and is sampled on the rising edge of TCK. This
pin may be left disconnected if the TAP is not used. The
pin is internally pulled up, resulting in a logic HIGH level.
TEST DATA-IN (TDI)
The TDI pin is used to serially input information to the
registers and can be connected to the input of any
register. The register between TDI and TDO is chosen by
the instruction loaded into the TAP instruction register.
For information on instruction register loading, see the
TAP Controller State Diagram. TDI is internally pulled up
and can be disconnected if the TAP is unused in an
application. TDI is connected to the Most Significant Bit
(MSB) on any register.
TAP CONTROLLER BLOCK DIAGRAM
0
Bypass Register
2
1
0
Instruction Register
TDI
Selection Circuitry
Selection Circuitry
31 30 29
. . .
2
1
0
2
1
0
TDO
Identification Register
x
. . . . .
Boundary Scan Register*
TCK
TMS
TAP CONTROLLER
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
23
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
TEST DATA OUT (TDO)
The TDO output pin is used to serially clock data-out from
the registers. The output is active depending on the current
state of the TAP state machine (see TAP Controller State
Diagram). The output changes on the falling edge of TCK
and TDO is connected to the Least Significant Bit (LSB) of
any register.
PERFORMING A TAP RESET
A Reset is performed by forcing TMS HIGH (VDD) for five
rising edges of TCK. RESET may be performed while the
SRAM is operating and does not affect its operation. At
power-up, the TAP is internally reset to ensure that TDO
comes up in a high-Z state.
TAP REGISTERS
Registers are connected between the TDI and TDO pins
and allow data to be scanned into and out of the SRAM test
circuitry. Only one register can be selected at a time
through the instruction registers. Data is serially loaded
into the TDI pin on the rising edge of TCK and output on the
TDO pin on the falling edge of TCK.
is set LOW (VSS) when the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all input and
output pins on the SRAM. Several no connect (NC) pins are
also included in the scan register to reserve pins for higher
density devices. The x36 configuration has a 75-bit-long
register and the x18 configuration also has a 75-bit-long
register. The boundary scan register is loaded with the
contents of the RAM Input and Output ring when the TAP
controller is in the Capture-DR state and then placed
between the TDI and TDO pins when the controller is moved
to the Shift-DR state. The EXTEST, SAMPLE/PRELOAD
and SAMPLE-Z instructions can be used to capture the
contents of the Input and Output ring.
The Boundary Scan Order tables show the order in which the
bits are connected. Each bit corresponds to one of the
bumps on the SRAM package. The MSB of the register is
connected to TDI, and the LSB is connected to TDO.
Scan Register Sizes
Instruction Register
Three-bit instructions can be serially loaded into the
instruction register. This register is loaded when it is
placed between the TDI and TDO pins. (See TAP Controller
Block Diagram) At power-up, the instruction register is
loaded with the IDCODE instruction. It is also loaded with
the IDCODE instruction if the controller is placed in a reset
state as previously described.
When the TAP controller is in the CaptureIR state, the two
least significant bits are loaded with a binary “01” pattern
to allow for fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers,
it is sometimes advantageous to skip certain states. The
bypass register is a single-bit register that can be placed
between TDI and TDO pins. This allows data to be shifted
through the SRAM with minimal delay. The bypass register
Register
Name
Bit Size
(x18)
Bit Size
(x36)
Instruction
3
3
Bypass
1
1
ID
32
32
Boundary Scan
75
75
Identification (ID) Register
The ID register is loaded with a vendor-specific, 32-bit
code during the Capture-DR state when the IDCODE
command is loaded to the instruction register. The IDCODE
is hardwired into the SRAM and can be shifted out when
the TAP controller is in the Shift-DR state. The ID register
has vendor code and other information described in the
Identification Register Definitions table.
IDENTIFICATION REGISTER DEFINITIONS
Instruction Field
Description
256K x 36
512K x 18
Revision Number (31:28)
Reserved for version number.
xxxx
xxxx
Device Depth (27:23)
Defines depth of SRAM. 256K or 512K
00111
01000
Device Width (22:18)
Defines Width of the SRAM. x36 or x18
00100
00011
ISSI Device ID (17:12)
Reserved for future use.
xxxxx
xxxxx
ISSI JEDEC ID (11:1)
Allows unique identification of SRAM vendor.
00011010101
00011010101
ID Register Presence (0)
Indicate the presence of an ID register.
1
1
24
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Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
TAP INSTRUCTION SET
SAMPLE/PRELOAD
Eight instructions are possible with the three-bit instruction
register and all combinations are listed in the Instruction
Code table. Three instructions are listed as RESERVED
and should not be used and the other five instructions are
described below. The TAP controller used in this SRAM is
not fully compliant with the 1149.1 convention because
some mandatory instructions are not fully implemented.
The TAP controller cannot be used to load address, data or
control signals and cannot preload the Input or Output
buffers. The SRAM does not implement the 1149.1 commands EXTEST or INTEST or the PRELOAD portion of
SAMPLE/PRELOAD; instead it performs a capture of the
Inputs and Output ring when these instructions are executed.
Instructions are loaded into the TAP controller during the
Shift-IR state when the instruction register is placed
between TDI and TDO. During this state, instructions are
shifted from the instruction register through the TDI and
TDO pins. To execute an instruction once it is shifted in,
the TAP controller must be moved into the Update-IR
state.
SAMPLE/PRELOAD is a 1149.1 mandatory instruction.
The PRELOAD portion of this instruction is not implemented, so the TAP controller is not fully 1149.1 compliant. When the SAMPLE/PRELOAD instruction is loaded
to the instruction register and the TAP controller is in the
Capture-DR state, a snapshot of data on the inputs and
output pins is captured in the boundary scan register.
It is important to realize that the TAP controller clock
operates at a frequency up to 10 MHz, while the SRAM
clock runs more than an order of magnitude faster.
Because of the clock frequency differences, it is possible
that during the Capture-DR state, an input or output will
under-go a transition. The TAP may attempt a signal
capture while in transition (metastable state). The device
will not be harmed, but there is no guarantee of the value
that will be captured or repeatable results.
To guarantee that the boundary scan register will capture
the correct signal value, the SRAM signal must be
stabilized long enough to meet the TAP controller’s
capture set-up plus hold times (tCS and tCH). To insure that
the SRAM clock input is captured correctly, designs need
a way to stop (or slow) the clock during a SAMPLE/
PRELOAD instruction. If this is not an issue, it is possible
to capture all other signals and simply ignore the value of
the CLK captured in the boundary scan register.
Once the data is captured, it is possible to shift out the data
by putting the TAP into the Shift-DR state. This places the
boundary scan register between the TDI and TDO pins.
Note that since the PRELOAD part of the command is not
implemented, putting the TAP into the Update to the Update-DR
state while performing a SAMPLE/PRELOAD instruction
will have the same effect as the Pause-DR command.
EXTEST
EXTEST is a mandatory 1149.1 instruction which is to be
executed whenever the instruction register is loaded with
all 0s. Because EXTEST is not implemented in the TAP
controller, this device is not 1149.1 standard compliant.
The TAP controller recognizes an all-0 instruction. When
an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction has been loaded. There is a difference between
the instructions, unlike the SAMPLE/PRELOAD instruction,
EXTEST places the SRAM outputs in a High-Z state.
IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit
code to be loaded into the instruction register. It also
places the instruction register between the TDI and TDO
pins and allows the IDCODE to be shifted out of the device
when the TAP controller enters the Shift-DR state. The
IDCODE instruction is loaded into the instruction register
upon power-up or whenever the TAP controller is given a
test logic reset state.
SAMPLE-Z
The SAMPLE-Z instruction causes the boundary scan
register to be connected between the TDI and TDO pins
when the TAP controller is in a Shift-DR state. It also
places all SRAM outputs into a High-Z state.
BYPASS
When the BYPASS instruction is loaded in the instruction
register and the TAP is placed in a Shift-DR state, the
bypass register is placed between the TDI and TDO pins.
The advantage of the BYPASS instruction is that it
shortens the boundary scan path when multiple devices
are connected together on a board.
RESERVED
These instructions are not implemented but are reserved
for future use. Do not use these instructions.
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Rev. B
08/26/05
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IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
INSTRUCTION CODES
Code
Instruction
Description
000
EXTEST
Captures the Input/Output ring contents. Places the boundary scan register between
the TDI and TDO. Forces all SRAM outputs to High-Z state. This
instruction is not 1149.1 compliant.
001
IDCODE
Loads the ID register with the vendor ID code and places the register between
TDI and TDO. This operation does not affect SRAM operation.
010
SAMPLE-Z
Captures the Input/Output contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
011
RESERVED
Do Not Use: This instruction is reserved for future use.
100
SAMPLE/PRELOAD
101
RESERVED
Do Not Use: This instruction is reserved for future use.
110
RESERVED
Do Not Use: This instruction is reserved for future use.
111
BYPASS
Captures the Input/Output ring contents. Places the boundary scan register between
TDI and TDO. Does not affect the SRAM operation. This instruction does not implement
1149.1 preload function and is therefore not 1149.1 compliant.
Places the bypass register between TDI and TDO. This operation does not
affect SRAM operation.
TAP CONTROLLER STATE DIAGRAM
Test Logic Reset
1
0
Run Test/Idle
1
Select DR
0
0
1
1
1
Capture DR
0
Shift DR
1
Exit1 DR
0
Select IR
0
1
Exit1 IR
0
Pause DR
0
1
0
1
26
Exit2 DR
1
Update DR
0
Capture IR
0
Shift IR
1
0
Pause IR
1
0
1
1
0
1
0
Exit2 IR
1
Update IR
0
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
TAP Electrical Characteristics Over the Operating Range(1,2)
Symbol
Parameter
Test Conditions
Min.
Max.
Units
VOH1
Output HIGH Voltage
IOH = –2.0 mA
1.7
—
V
VOH2
Output HIGH Voltage
IOH = –100 µA
2.1
—
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
—
0.7
V
VOL2
Output LOW Voltage
IOL = 100 µA
—
0.2
V
VIH
Input HIGH Voltage
1.7
VDD +0.3
V
VIL
Input LOW Voltage
–0.3
0.7
V
IX
Input Leakage Current
–10
10
µA
VSS ≤ V I ≤ VDDQ
Notes:
1. All Voltage referenced to Ground.
2. Overshoot: VIH (AC) ≤ VDD +1.5V for t ≤ tTCYC/2,
Undershoot: VIL (AC) ≤ 0.5V for t ≤ tTCYC/2,
Power-up: VIH < 2.6V and VDD < 2.4V and VDDQ < 1.4V for t < 200 ms.
TAP AC ELECTRICAL CHARACTERISTICS(1,2) (OVER OPERATING RANGE)
Symbol Parameter
Min.
Max.
Unit
tTCYC
TCK Clock cycle time
100
—
ns
fTF
TCK Clock frequency
—
10
MHz
tTH
TCK Clock HIGH
40
—
ns
tTL
TCK Clock LOW
40
—
ns
tTMSS
TMS setup to TCK Clock Rise
10
—
ns
tTDIS
TDI setup to TCK Clock Rise
10
—
ns
tCS
Capture setup to TCK Rise
10
—
ns
tTMSH
TMS hold after TCK Clock Rise
10
—
ns
tTDIH
TDI Hold after Clock Rise
10
—
ns
tCH
Capture hold after Clock Rise
10
—
ns
tTDOV
TCK LOW to TDO valid
—
20
ns
tTDOX
TCK LOW to TDO invalid
0
—
ns
Notes:
1. tCS and tCH refer to the set-up and hold time requirements of latching data from the boundary scan register.
2. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
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IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
TAP AC TEST CONDITIONS (2.5V/3.3V)
Input pulse levels
®
TAP Output Load Equivalent
0 to 2.5V/0 to 3.0V
Input rise and fall times
1ns
Input timing reference levels
1.25V/1.5V
Output reference levels
1.25V/1.5V
Test load termination supply voltage
1.25V/1.5V
Vtrig
1.25V/1.5V
50Ω
Vtrig
TDO
Z0 = 50Ω
20 pF
GND
TAP TIMING
1
2
tTHTH
3
4
5
6
tTLTH
TCK
tTHTL
tMVTH tTHMX
TMS
tDVTH tTHDX
TDI
tTLOV
TDO
tTLOX
DON'T CARE
UNDEFINED
28
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Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
165 PBGA BOUNDARY SCAN ORDER (x 36)
Bit #
Signal Bump
Name
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
1
MODE
1R
21
DQb
11G
41
NC
1A
61
DQd
1J
2
NC
6N
22
DQb
11F
42
CE2
6A
62
DQd
1K
3
NC
11P
23
DQb
11E
43
BWa
5B
63
DQd
1L
4
A
8P
24
DQb
11D
44
BWb
5A
64
DQd
1M
5
A
8R
25
DQb
10G
45
BWc
4A
65
DQd
2J
6
A
9R
26
DQb
10F
46
BWd
4B
66
DQd
2K
7
A
9P
27
DQb
10E
47
CE2
3B
67
DQd
2L
8
A
10P
28
DQb
10D
48
CE
3A
68
DQd
2M
9
A
10R
29
DQb
11C
49
A
2A
69
DQd
1N
10
A
11R
30
NC
11A
50
A
2B
70
A
3P
11
ZZ
11H
31
A
10A
51
NC
1B
71
A
3R
12
DQa
11N
32
A
10B
52
DQc
1C
72
A
4R
13
DQa
11M
33
A
9A
53
DQc
1D
73
A
4P
14
DQa
11L
34
NC
9B
54
DQc
1E
74
A1
6P
15
DQa
11K
35
ADV
8A
55
DQc
1F
75
A0
6R
16
DQa
11J
36
OE
8B
56
DQc
1G
17
DQa
10M
37
CKE
7A
57
DQc
2D
18
DQa
10L
38
WE
7B
58
DQc
2E
19
DQa
10K
39
CLK
6B
59
DQc
2F
20
DQa
10J
40
NC
11B
60
DQc
2G
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
29
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
165 PBGA BOUNDARY SCAN ORDER (x 18)
Bit #
Signal Bump
Name
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
Bit #
Signal
Name
Bump
ID
1
MODE
1R
21
DQa
11G
41
NC
1A
61
DQb
1J
2
NC
6N
22
DQa
11F
42
CE2
6A
62
DQb
1K
3
NC
11P
23
DQa
11E
43
BWa
5B
63
DQb
1L
4
A
8P
24
DQa
11D
44
NC
5A
64
DQb
1M
5
A
8R
25
DQa
11C
45
BWb
4A
65
DQb
1N
6
A
9R
26
NC
10F
46
NC
4B
66
NC
2K
7
A
9P
27
NC
10E
47
CE2
3B
67
NC
2L
8
A
10P
28
NC
10D
48
CE
3A
68
NC
2M
9
A
10R
29
NC
10G
49
A
2A
69
NC
2J
10
A
11R
30
A
11A
50
A
2B
70
A
3P
11
ZZ
11H
31
A
10A
51
NC
1B
71
A
3R
12
NC
11N
32
A
10B
52
NC
1C
72
A
4R
13
NC
11M
33
A
9A
53
NC
1D
73
A
4P
14
NC
11L
34
NC
9B
54
NC
1E
74
A1
6P
15
NC
11K
35
ADV
8A
55
NC
1F
75
A0
6R
16
NC
11J
36
OE
8B
56
NC
1G
17
DQa
10M
37
CKE
7A
57
DQb
2D
18
DQa
10L
38
WE
7B
58
DQb
2E
19
DQa
10K
39
CLK
6B
59
DQb
2F
20
DQa
10J
40
NC
11B
60
DQb
2G
30
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
119 BOUNDARY SCAN ORDER (256K X 36)
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
31
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
119 BOUNDARY SCAN ORDER (512K X 18)
32
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
ORDERING INFORMATION (VDD = 3.3V/VDDQ = 2.5V/3.3V)
Commercial Range: 0°C to +70°C
Access Time
Order Part Number
Package
256Kx36
6.5
7.5
IS61NLF25636A-6.5TQ
IS61NLF25636A-6.5B2
100 TQFP
119 PBGA
IS61NLF25636A-6.5B3
165 PBGA
IS61NLF25636A-7.5TQ
IS61NLF25636A-7.5B2
IS61NLF25636A-7.5B3
100 TQFP
119 PBGA
165 PBGA
512Kx18
6.5
IS61NLF51218A-6.5TQ
IS61NLF51218A-6.5B2
IS61NLF51218A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF51218A-7.5TQ
IS61NLF51218A-7.5B2
IS61NLF51218A-7.5B3
100 TQFP
119 PBGA
165 PBGA
Order Part Number
Package
Industrial Range: -40°C to +85°C
Access Time
256Kx36
6.5
IS61NLF25636A-6.5TQI
IS61NLF25636A-6.5B2I
IS61NLF25636A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF25636A-7.5TQI
IS61NLF25636A-7.5TQLI
IS61NLF25636A-7.5B2I
IS61NLF25636A-7.5B3I
100 TQFP
100 TQFP, Lead-free
119 PBGA
165 PBGA
512Kx18
6.5
IS61NLF51218A-6.5TQI
IS61NLF51218A-6.5B2I
IS61NLF51218A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NLF51218A-7.5TQI
IS61NLF51218A-7.5TQLI
IS61NLF51218A-7.5B2I
100 TQFP
100 TQFP, Lead-free
119 PBGA
IS61NLF51218A-7.5B3I
165 PBGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
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33
IS61NLF25636A/IS61NVF25636A
IS61NLF51218A/IS61NVF51218A
ISSI
®
ORDERING INFORMATION (VDD = 2.5V/VDDQ = 2.5V)
Commercial Range: 0°C to +70°C
Access Time
Order Part Number
Package
256Kx36
6.5
IS61NVF25636A-6.5TQ
IS61NVF25636A-6.5B2
IS61NVF25636A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF25636A-7.5TQ
IS61NVF25636A-7.5B2
100 TQFP
119 PBGA
IS61NVF25636A-7.5B3
165 PBGA
512Kx18
6.5
IS61NVF51218A-6.5TQ
IS61NVF51218A-6.5B2
IS61NVF51218A-6.5B3
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF51218A-7.5TQ
IS61NVF51218A-7.5B2
IS61NVF51218A-7.5B3
100 TQFP
119 PBGA
165 PBGA
Order Part Number
Package
Industrial Range: -40°C to +85°C
Access Time
256Kx36
6.5
IS61NVF25636A-6.5TQI
IS61NVF25636A-6.5B2I
IS61NVF25636A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF25636A-7.5TQI
IS61NVF25636A-7.5B2I
IS61NVF25636A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
512Kx18
34
6.5
IS61NVF51218A-6.5TQI
IS61NVF51218A-6.5B2I
IS61NVF51218A-6.5B3I
100 TQFP
119 PBGA
165 PBGA
7.5
IS61NVF51218A-7.5TQI
IS61NVF51218A-7.5B2I
IS61NVF51218A-7.5B3I
100 TQFP
119 PBGA
165 PBGA
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
08/26/05
ISSI
PACKAGING INFORMATION
®
Plastic Ball Grid Array
Package Code: B (119-pin)
φ b (119X)
E
A
7
6
5
4
D2
D1
e
A2
A3
E2
Sym.
Min.
N0.
Leads
Max.
SEATING PLANE
INCHES
Min.
Max.
Notes:
119
A
—
2.41
—
0.095
A1
0.50
0.70
0.020
0.028
A2
0.80
1.00
0.032
0.039
A3
1.30
1.70
0.051
0.067
A4
0.56 BSC
0.60
0.90
0.024
0.035
D
21.80
22.20
0.858
0.874
20.32 BSC
0.800 BSC
D2
19.40
19.60
0.764
0.772
E
13.80
14.20
0.543
0.559
E1
E2
e
7.62 BSC
11.90
12.10
1.27 BSC
1. Controlling dimension: millimeters, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D1 and E do not include mold flash protrusion and
should be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within
0.004 inches at the seating plane.
0.022 BSC
b
D1
E1
A1
A4
MILLIMETERS
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
T
U
30ϒ
D
3 2
0.300 BSC
0.469
0.476
0.050 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
02/12/03
ISSI
PACKAGING INFORMATION
®
Ball Grid Array
Package Code: B (165-pin)
BOTTOM VIEW
TOP VIEW
A1 CORNER
1
2
3
4
A1 CORNER
φ b (165X)
5
6
7
8
9
10
11 10
11
9
8
7
6
5
4
3
2
1
A
A
B
B
C
C
D
D
E
E
e
F
F
G
G
D D1
H
H
J
J
K
K
L
L
M
M
N
N
P
P
R
R
e
E1
E
A2
A
A1
BGA - 13mm x 15mm
MILLIMETERS
Sym.
Min.
N0.
Leads
Nom. Max.
Notes:
1. Controlling dimensions are in millimeters.
INCHES
Min.
165
Nom. Max.
165
A
—
—
1.20
—
A1
0.25
0.33
0.40
0.010
—
0.047
0.013 0.016
A2
—
0.79
—
—
0.031
—
D
14.90
15.00
15.10
0.587
0.591
0.594
D1
13.90
14.00
14.10
0.547
0.551
0.555
E
12.90
13.00
13.10
0.508
0.512
0.516
E1
9.90
10.00
10.10
0.390
0.394
0.398
e
—
1.00
—
—
0.039
—
b
0.40
0.45
0.50
0.016
0.018
0.020
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. A
06/11/03
ISSI
PACKAGING INFORMATION
TQFP (Thin Quad Flat Pack Package)
Package Code: TQ
D
D1
E
E1
N
L1
L
C
1
e
SEATING
PLANE
A2
A
b
A1
Thin Quad Flat Pack (TQ)
Inches
Millimeters
Min
Max
Min
Max
Millimeters
Symbol Min
Max
Ref. Std.
No. Leads (N)
100
A
—
1.60
—
0.063
A1
0.05 0.15
0.002 0.006
A2
1.35 1.45
0.053 0.057
b
0.22 0.38
0.009 0.015
D
21.90 22.10
0.862 0.870
D1
19.90 20.10
0.783 0.791
E
15.90 16.10
0.626 0.634
E1
13.90 14.10
0.547 0.555
e
0.65 BSC
0.026 BSC
L
0.45 0.75
0.018 0.030
L1
1.00 REF.
0.039 REF.
C
0o
7o
0o
7o
128
—
1.60
0.05 0.15
1.35 1.45
0.17 0.27
21.80 22.20
19.90 20.10
15.80 16.20
13.90 14.10
0.50 BSC
0.45 0.75
1.00 REF.
0o
7o
Integrated Silicon Solution, Inc. — 1-800-379-4774
PK13197LQ Rev. D 05/08/03
Inches
Min
Max
—
0.063
0.002 0.006
0.053 0.057
0.007 0.011
0.858 0.874
0.783 0.791
0.622 0.638
0.547 0.555
0.020 BSC
0.018 0.030
0.039 REF.
0o
7o
Notes:
1. All dimensioning and
tolerancing conforms to
ANSI Y14.5M-1982.
2. Dimensions D1 and E1 do
not include mold protrusions.
Allowable protrusion is 0.25
mm per side. D1 and E1 do
include mold mismatch and
are determined at datum
plane -H-.
3. Controlling dimension:
millimeters.
®
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