ISSI IS61WV25616EDBLL-10BI 256k x 16 high speed asynchronous cmos static ram with ecc Datasheet

IS61WV25616EDBLL
IS64WV25616EDBLL
256K x 16 HIGH SPEED ASYNCHRONOUS
CMOS STATIC RAM WITH ECC
FEATURES
• High-speed access time: 8, 10 ns
• Low Active Power: 85 mW (typical)
• Low Standby Power: 7 mW (typical)
CMOS standby
• Single power supply
— Vdd 2.4V to 3.6V (10 ns)
— Vdd 3.3V ± 10% (8 ns)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free available
• Error Detection and Error Correction
OCTOBER 2011
DESCRIPTION
The ISSI IS61/64WV25616EDBLL is a high-speed,
4,194,304-bit static RAMs organized as 262,144 words
by 16 bits. It is fabricated using ISSI's high-performance
CMOS technology. This highly reliable process coupled
with innovative circuit design techniques, yields highperformance and low power consumption devices.
When CE is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs, CE and OE. The active LOW
Write Enable (WE) controls both writing and reading of the
memory. A data byte allows Upper Byte (UB) and Lower
Byte (LB) access.
The IS61/64WV25616EDBLL is packaged in the JEDEC
standard 44-pin TSOP-II and 48-pin Mini BGA (6mm x
8mm).
FUNCTIONAL BLOCK DIAGRAM
Memory
Lower IO
Array256Kx8
A0-A17
Decoder
8
IO0-7
IO8-15
/CE
/OE
/WE
/UB
/LB
8
8
I/O Data
Circuit
8
ECC
ECC
12
12
8
ECC
Array256K
x4
4
Memory
ECC
Array256K
x4
Upper IO
Array256Kx8
8
4
Column I/O
Control
Circuit
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications
unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
1
IS61/64WV25616EDBLL
TRUTH TABLE
Mode
Not Selected
Output Disabled
Read
Write
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
PIN CONFIGURATIONS
44-Pin TSOP (Type II)
A0
A1
A2
A3
A4
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
WE
A5
A6
A7
A8
A9
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
I/O PIN
UB
I/O0-I/O7
I/O8-I/O15
X
High-Z
High-Z
X
High-Z
High-Z
H
High-Z
High-Z
H
Dout
High-Z
L
High-Z
Dout
LDoutDout
H
Din
High-Z
L
High-Z
Din
LDinDin
Vdd Current
Isb1, Isb2
Icc
Icc
Icc
PIN DESCRIPTIONS
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A17
A16
A15
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
A14
A13
A12
A11
A10
A0-A17
I/O0-I/O15
CE
OE
WE
LB
UB
NC
Vdd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
*SOJ package under evaluation.
2
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
IS61/64WV25616EDBLL
PIN CONFIGURATIONS
44-Pin LQFP*
1
48-Pin mini BGA (6mm x 8mm)
2
3
4
5
2
6
A17
A16
A15
A14
A13
A12
A11
A10
OE
UB
LB
1
44 43 42 41 40 39 38 37 36 35 34
33
1
32
2
31
3
30
4
29
5
TOP VIEW
28
6
27
7
26
8
25
9
24
10
23
11
12 13 14 15 16 17 18 19 20 21 22
I/O15
I/O14
I/O13
I/O12
GND
VDD
I/O11
I/O10
I/O9
I/O8
NC
3
A
LB
OE
A0
A1
A2
N/C
B
I/O8
UB
A3
A4
CE
I/O0
C
I/O9
I/O10
A5
A6
I/O1
I/O2
D
GND
I/O11
A17
A7
I/O3
VDD
E
VDD
I/O12
NC
A16
I/O4
GND
F
I/O14
I/O13
A14
A15
I/O5
I/O6
G
I/O15
NC
A12
A13
WE
I/O7
H
NC
A8
A9
A10
A11
NC
4
5
6
WE
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
CE
I/O0
I/O1
I/O2
I/O3
VDD
GND
I/O4
I/O5
I/O6
I/O7
7
*LQFP package under evaluation.
8
PIN DESCRIPTIONS
A0-A17
I/O0-I/O15
CE
OE
WE
LB
UB
NC
Vdd
GND
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Output Enable Input
Write Enable Input
Lower-byte Control (I/O0-I/O7)
Upper-byte Control (I/O8-I/O15)
No Connection
Power
Ground
9
10
11
12
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
3
IS61/64WV25616EDBLL
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
Vterm
Vdd
Tstg
Pt
Parameter
Terminal Voltage with Respect to GND
Vdd Relates to GND
Storage Temperature
Power Dissipation
Value
–0.5 to Vdd + 0.5
–0.3 to 4.0
–65 to +150
1.0
Unit
V
V
°C
W
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol
Cin
CI/O
Parameter
Input Capacitance
Input/Output Capacitance
Conditions
Vin = 0V
Vout = 0V
Max.
6
8
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: Ta = 25°C, f = 1 MHz, Vdd = 3.3V.
ERROR DETECTION AND ERROR CORRECTION
•
•
•
•
Independent ECC for each byte
Detect and correct one bit error per byte
Better reliability than parity code schemes which can only detect an error but not correct an error
Backward Compatible: Drop in replacement to current in industry standard devices (without ECC)
OPERATING RANGE (Vdd)1
Range
Ambient Temperature
Industrial
–40°C to +85°C
Automotive (A1)
Automotive (A3)
–40°C to +85°C
–40°C to +125°C
IS61WV25616EDBLL
Vdd (8, 10ns)
2.4V-3.6V (10ns)
3.3V ± 10% (8ns)
—
—
IS64WV25616EDBLL
Vdd (10ns)
—
2.4V-3.6V
2.4V-3.6V
Note:
1. Contact [email protected] for 1.8V option
4
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Rev. A
09/29/2011
IS61/64WV25616EDBLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 3.3V + 10%
Symbol
Voh
Vol
Vih
Vil
Ili
Ilo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Output Leakage
Test Conditions
Vdd = Min., Ioh = –4.0 mA
Vdd = Min., Iol = 8.0 mA
GND ≤ Vin ≤ Vdd
GND ≤ Vout ≤ Vdd, Outputs Disabled
Min.
2.4
—
2
–0.3
–1
–1
Max.
—
0.4
Vdd + 0.3
0.8
1
1
1
Unit
V
V
V
V
µA
µA
2
3
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
4
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Vdd = 2.4V-3.6V
Symbol
Voh
Vol
Vih
Vil
Ili
Ilo
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Output Leakage
Test Conditions
Vdd = Min., Ioh = –1.0 mA
Vdd = Min., Iol = 1.0 mA
GND ≤ Vin ≤ Vdd
GND ≤ Vout ≤ Vdd, Outputs Disabled
Min.
1.8
—
2.0
–0.3
–1
–1
Max.
—
0.4
Vdd + 0.3
0.8
1
1
5
Unit
V
V
V
V
µA
µA
6
7
Note:
1. Vil (min.) = –0.3V DC; Vil (min.) = –2.0V AC (pulse width < 10 ns). Not 100% tested.
Vih (max.) = Vdd + 0.3V DC; Vih (max.) = Vdd + 2.0V AC (pulse width < 10 ns). Not 100% tested.
8
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-8 -10 -20
Symbol Parameter
Test ConditionsMin. Max.
Min. Max.
Min. Max.
Icc
Vdd Dynamic Operating Vdd = Max.,
Com.
— 40
—
30
—
25
Supply Current
Iout = 0 mA, f = fmax
Ind.
— 45
—
35
—
30
Auto.
—
—
—
50
—
45
21
21
typ.(2)
Icc1
Operating
Vdd = Max.,
Com.
— 20
—
20
—
20
Supply Current
Iout = 0 mA, f = 0
Ind.
— 25
—
25
—
25
Auto.
—
—
—
40
—
40
Isb1
TTL Standby Current
Vdd = Max.,
Com. — 10
— 10
—
10
(TTL Inputs)
Vin = Vih or Vil
Ind.
— 15
—
15
—
15
CE ≥ Vih, f = 0
Auto.
—
—
—
30
—
30
Isb2
CMOS Standby
Vdd = Max.,
Com. — 5
— 5
— 5
Current (CMOS Inputs) CE ≥ Vdd – 0.2V,
Ind. — 6
— 6
— 6
Vin ≥ Vdd – 0.2V, or
Auto.
—
—
—
15
— 15
Vin ≤ 0.2V, f = 0
typ.(2)
1.5
1.5
Unit
mA
9
mA
10
11
mA
mA
12
Note:
1. At f = fmax, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at Vdd = 3.0V, Ta = 25oC and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
5
IS61/64WV25616EDBLL
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Level (VRef)
Output Load
Unit
(2.4V-3.6V)
0.4V to Vdd-0.3V
1V/ ns
Vdd/2
See Figures 1 and 2
AC TEST LOADS
319 Ω
ZO = 50Ω
3.3V
50Ω
1.5V
OUTPUT
30 pF
Including
jig and
scope
Figure 1.
OUTPUT
353 Ω
5 pF
Including
jig and
scope
Figure 2.
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-8 -10 -20
Symbol
Parameter
Min.Max.
Min.Max.
Min.Max.
trc
Read Cycle Time
8
—
10
—
20 —
taa
Address Access Time
—
8
—
10
— 20
toha
Output Hold Time
2.0 —
2.0 —
2.5 —
tace
CE Access Time
—
8
—
10
— 20
tdoe
OE Access Time
— 4.5
— 4.5
—
8
thzoe(2)
OE to High-Z Output
—
3
—
4
0
8
(2)
tlzoe
OE to Low-Z Output
0
—
0
—
0
—
thzce(2
CE to High-Z Output
0
3
0
4
0
8
(2)
tlzce
CE to Low-Z Output
3
—
3
—
3
—
tba
LB, UB Access Time
— 5.5
— 6.5
—
8
(2)
thzb
LB, UB to High-Z Output
0
3
0
3
0
8
tlzb(2)
LB, UB to Low-Z Output
0
—
0
—
0
—
tpu
Power Up Time
0
—
0
—
0
—
tpd
Power Down Time
—
8
—
10
— 20
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes:
1. Test conditions and output loading conditions are specified in the AC Test Conditions and AC Test Loads (Figure 1).
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage.
6
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Rev. A
09/29/2011
IS61/64WV25616EDBLL
1
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CE = OE = Vil, UB or LB = Vil)
2
t RC
ADDRESS
t OHA
DOUT
t AA
3
t OHA
DATA VALID
PREVIOUS DATA VALID
4
READ1.eps
5
READ CYCLE NO. 2
(1,3)
6
tRC
ADDRESS
tAA
tOHA
7
OE
tHZOE
tDOE
tLZOE
CE
tACE
tLZCE
8
tHZCE
LB, UB
DOUT
VDD
Supply
Current
HIGH-Z
tBA
tLZB
tHZB
tRC
9
DATA VALID
tPU
50%
tPD
50%
ICC
10
ISB
UB_CEDR2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE, UB, or LB = Vil.
3. Address is valid prior to or coincident with CE LOW transition.
11
12
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Rev. A
09/29/2011
7
IS61/64WV25616EDBLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
-8 -10 -20
Symbol
Parameter Min.Max. Min.Max.
Min. Max.
twc
Write Cycle Time
8
—
10
—
20
—
tsce
CE to Write End
6.5
—
8
—
12
—
taw
Address Setup Time
6.5
—
8
—
12
—
to Write End
tha
Address Hold from Write End
0
—
0
—
0
—
tsa
Address Setup Time
0
—
0
—
0
—
tpwb
LB, UB Valid to End of Write
6.5
—
8
—
12
—
tpwe1
WE Pulse Width
6.5
—
8
—
12
—
tpwe2
WE Pulse Width (OE = LOW)
8
—
10
—
17
—
tsd
Data Setup to Write End
5
—
6
—
9
—
thd
Data Hold from Write End
0
—
0
—
0
—
thzwe(2)
WE LOW to High-Z Output
—
3.5
—
5
—
9
(2)
tlzwe
WE HIGH to Low-Z Output
2
—
2
—
3
—
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
­ns
ns
ns
Notes:
1. Test conditions and output loading conditions are specified in the AC Test Conditions and AC Test Loads (Figure 1).
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and UB or LB, and WE LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to
the rising or falling edge of the signal that terminates the write. Shaded area product in development
8
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Rev. A
09/29/2011
IS61/64WV25616EDBLL
1
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE is HIGH or LOW)
(1 )
2
t WC
VALID ADDRESS
ADDRESS
t SA
t SCE
t HA
3
CE
t AW
t PWE1
t PWE2
WE
4
t PWB
UB, LB
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
5
t HD
DATAIN VALID
DIN
UB_CEWR1.eps
6
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CE and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CE) [ (LB) = (UB) ] (WE).
7
8
WRITE CYCLE NO. 2 (WE Controlled. OE is HIGH During Write Cycle) (1,2)
t WC
ADDRESS
9
VALID ADDRESS
t HA
OE
CE
10
LOW
t AW
t PWE1
WE
t SA
t PWB
11
UB, LB
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
12
t HD
DATAIN VALID
UB_CEWR2.eps
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Rev. A
09/29/2011
9
IS61/64WV25616EDBLL
AC WAVEFORMS
WRITE CYCLE NO. 3 (WE Controlled. OE is LOW During Write Cycle) (1)
t WC
ADDRESS
VALID ADDRESS
OE
LOW
CE
LOW
t HA
t AW
t PWE2
WE
t SA
t PWB
UB, LB
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
t HD
DATAIN VALID
DIN
UB_CEWR3.eps
WRITE CYCLE NO. 4 (LB, UB Controlled, Back-to-Back Write) (1,3)
t WC
ADDRESS
t WC
ADDRESS 1
ADDRESS 2
OE
t SA
CE
LOW
t HA
t SA
WE
UB, LB
t HA
t PWB
t PWB
WORD 1
WORD 2
t HZWE
DOUT
t LZWE
HIGH-Z
DATA UNDEFINED
t HD
t SD
DIN
DATAIN
VALID
t HD
t SD
DATAIN
VALID
UB_CEWR4.eps
Notes:
1. The internal Write time is defined by the overlap of CE = LOW, UB and/or LB = LOW, and WE = LOW. All signals must be in
valid states to initiate a Write, but any can be deasserted to terminate the Write. The t sa, t ha, t sd, and t hd timing is referenced
to the rising or falling edge of the signal that terminates the Write.
2. Tested with OE HIGH for a minimum of 4 ns before WE = LOW to place the I/O in a HIGH-Z state.
3. WE may be held LOW across many address cycles and the LB, UB pins can be used to control the Write function.
10
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Rev. A
09/29/2011
IS61/64WV25616EDBLL
HIGH SPEED (IS61/64WV25616EDBLL)
1
DATA RETENTION SWITCHING CHARACTERISTICS (2.4V-3.6V)
Symbol
Idr
Parameter
Vdd for Data Retention
Data Retention Current
Test Condition
See Data Retention Waveform
Vdd = 2.0V, CE ≥ Vdd – 0.2V
tsdr
trdr
Data Retention Setup Time
Recovery Time
See Data Retention Waveform
See Data Retention Waveform
Vdr
Options
Com.
Ind.
Auto.
Min.
2.0
—
—
Typ.(1)
—
0.5
—
0
—
—
trc
Max.
3.6
5
6
15
—
—
Unit
V
mA
2
3
ns
ns
Note 1: Typical values are measured at Vdd = Vdr(min), Ta = 25 C and not 100% tested.
o
4
DATA RETENTION WAVEFORM (CE Controlled)
5
tSDR
Data Retention Mode
tRDR
VDD
6
VDR
7
CE
GND
CE ≥ VDD - 0.2V
8
9
10
11
12
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Rev. A
09/29/2011
11
IS61/64WV25616EDBLL
ORDERING INFORMATION (HIGH SPEED)
Industrial Range: -40°C to +85°C
Speed (ns)
8
10
Order Part No.
IS61WV25616EDBLL-8BI
IS61WV25616EDBLL-8BLI
IS61WV25616EDBLL-8TI
IS61WV25616EDBLL-8TLI
IS61WV25616EDBLL-10BI
IS61WV25616EDBLL-10BLI
IS61WV25616EDBLL-10TI
IS61WV25616EDBLL-10TLI
Package
48 mini BGA (6mm x 8mm)
48 mini BGA (6mm x 8mm), Lead-free
TSOP (Type II)
TSOP (Type II), Lead-free
48 mini BGA (6mm x 8mm)
48 mini BGA (6mm x 8mm), Lead-free
TSOP (Type II)
TSOP (Type II), Lead-free
Automotive (A1) Range: -40°C to +85°C
Speed (ns)
10
Order Part No.
IS64WV25616EDBLL-10BA1
IS64WV25616EDBLL-10BLA1
IS64WV25616EDBLL-10CTA1
IS64WV25616EDBLL-10CTLA1
Package
48 mini BGA (6mm x 8mm)
48 mini BGA (6mm x 8mm), Lead-free
TSOP (Type II), Copper Leadframe
TSOP (Type II), Lead-free, Copper Leadframe
Automotive (A3) Range: -40°C to +125°C
Speed (ns)
10
12
Order Part No.
IS64WV25616EDBLL-10BA3
IS64WV25616EDBLL-10BLA3
IS64WV25616EDBLL-10CTA3
IS64WV25616EDBLL-10CTLA3
Package
48 mini BGA (6mm x 8mm)
48 mini BGA (6mm x 8mm), Lead-free
TSOP (Type II), Copper Leadframe
TSOP (Type II), Lead-free, Copper Leadframe
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
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Package Outline
06/04/2008
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION.
1. CONTROLLING DIMENSION : MM
NOTE :
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IS61/64WV25616EDBLL
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Package Outline
08/12/2008
1. CONTROLLING DIMENSION : MM .
2. Reference document : JEDEC MO-207
NOTE :
IS61/64WV25616EDBLL
Integrated Silicon Solution, Inc. — www.issi.com
Rev. A
09/29/2011
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