ISSI IS62C256-70TI 32k x 8 low power cmos static ram Datasheet

IS62C256
32K x 8 LOW POWER CMOS STATIC RAM
FEATURES
ISSI
®
DESCRIPTION
The ISSI IS62C256 is a low power, 32,768 word by 8-bit
CMOS static RAM. It is fabricated using ISSI's high-
• Access time: 45, 70 ns
• Low active power: 200 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 28 mW (typical) TTL standby
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 5V power supply
performance, low power CMOS technology.
When CS is HIGH (deselected), the device assumes a standby
mode at which the power dissipation can be reduced down to
250 µW (typical) at CMOS input levels.
Easy memory expansion is provided by using an active LOW
Chip Select (CS) input and an active LOW Output Enable (OE)
input. The active LOW Write Enable (WE) controls both writing
and reading of the memory.
The IS62C256 is pin compatible with other 32K x 8 SRAMs in
plastic SOP or TSOP (Type I) package.
FUNCTIONAL BLOCK DIAGRAM
A0-A14
DECODER
32K X 8
MEMORY ARRAY
I/O
DATA
CIRCUIT
COLUMN I/O
VCC
GND
I/O0-I/O7
CS
OE
CONTROL
CIRCUIT
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which
may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
1
ISSI
IS62C256
PIN CONFIGURATION
PIN CONFIGURATION
28-Pin SOP
28-Pin TSOP
A14
1
28
VCC
A12
2
27
WE
A7
3
26
A13
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE
A2
8
21
A10
A1
9
20
CS
A0
10
19
I/O7
I/O0
11
18
I/O6
I/O1
12
17
I/O5
I/O2
13
16
I/O4
GND
14
15
I/O3
PIN DESCRIPTIONS
A0-A14
CS
OE
WE
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
Mode
Chip Select Input
Not Selected
(Power-down)
Output Disabled
Read
Write
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
A10
CS
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
TRUTH TABLE
Address Inputs
Output Enable Input
21
20
19
18
17
16
15
14
13
12
11
10
9
8
22
23
24
25
26
27
28
1
2
3
4
5
6
7
®
WE
CS
OE
I/O Operation
Vcc Current
X
H
X
High-Z
ISB1, ISB2
H
H
L
L
L
L
H
L
X
High-Z
DOUT
DIN
ICC1, ICC2
ICC1, ICC2
ICC1, ICC2
ABSOLUTE MAXIMUM RATINGS(1)
Symbol
VTERM
TBIAS
TSTG
PT
IOUT
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–55 to +125
–65 to +150
0.5
20
Unit
V
°C
°C
W
mA
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
ISSI
IS62C256
®
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
VCC
5V ± 10%
5V ± 10%
DC ELECTRICAL CHARACTERISTICS
Symbol
VOH
VOL
VIH
VIL
ILI
ILO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
Test Conditions
VCC = Min., IOH = –1.0 mA
VCC = Min., IOL = 2.1 mA
Output Leakage
GND ≤ VOUT ≤ VCC,
Outputs Disabled
GND ≤ VIN ≤ VCC
Com.
Ind.
Com.
Ind.
Min.
2.4
—
2.2
–0.3
–2
–10
–2
–10
Max.
—
0.4
VCC + 0.5
0.8
2
10
2
10
Unit
V
V
V
V
µA
µA
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol
ICC1
ICC2
ISB1
ISB2
Parameter
Vcc Operating
Supply Current
Vcc Dynamic Operating
Supply Current
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
Test Conditions
VCC = Max., CS = VIL
IOUT = 0 mA, f = 0
VCC = Max., CS = VIL
IOUT = 0 mA, f = fMAX
VCC = Max.,
VIN = VIH or VIL
CS ≥ VIH, f = 0
VCC = Max.,
CS ≥ VCC – 0.2V,
VIN ≥ VCC – 0.2V, or
VIN ≤ 0.2V, f = 0
Com.
Ind.
Com.
Ind.
Com.
Ind.
Com.
Ind.
-45 ns
Min. Max.
— 60
— 70
— 70
— 80
—
5
— 10
—
—
0.5
1.0
-70 ns
Min. Max.
—
60
—
70
—
65
—
75
—
5
—
10
—
—
0.5
1.0
Unit
mA
mA
mA
mA
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
CAPACITANCE(1,2)
Symbol
CIN
COUT
Parameter
Input Capacitance
Output Capacitance
Conditions
VIN = 0V
VOUT = 0V
Max.
8
10
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
3
ISSI
IS62C256
®
DATA RETENTION CHARACTERISTICS
Symbol
VDR
IDR1
IDR2
Parameter
VCC for retention of data
Data retention current
Data retention current
Test Conditions
Min.
2.0
—
—
VDR = 3.0V, TA = 0°C to +25°C
VDR = 3.0V, TA = 0°C to +70°C
Max.
—
200
200
Units
V
µA
µA
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol
-45 ns
Min. Max.
Parameter
-70 ns
Min.
Max.
Unit
tRC
Read Cycle Time
45
—
70
—
ns
tAA
Address Access Time
—
45
—
70
ns
tOHA
Output Hold Time
2
—
2
—
ns
—
45
—
70
ns
—
25
—
35
ns
0
—
0
—
ns
0
20
0
25
ns
3
—
3
—
ns
0
20
0
25
ns
0
—
0
—
ns
—
30
—
50
ns
tACS
tDOE
tLZOE
(2)
tHZOE
(2)
tLZCS(2)
tHZCS(2)
tPU
(3)
tPD
(3)
CS Access Time
OE Access Time
OE to Low-Z Output
OE to High-Z Output
CS to Low-Z Output
CS to High-Z Output
CS to Power-Up
CS to Power-Down
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. Not 100% tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Input and Output Timing
and Reference Levels
Output Load
Unit
0V to 3.0V
3 ns
1.5V
See Figures 1 and 2
AC TEST LOADS
480 Ω
5V
OUTPUT
OUTPUT
100 pF
Including
jig and
scope
Figure 1.
4
480 Ω
5V
255 Ω
5 pF
Including
jig and
scope
255 Ω
Figure 2.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
ISSI
IS62C256
®
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t RC
ADDRESS
t AA
t OHA
t OHA
DOUT
DATA VALID
PREVIOUS DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
t OHA
OE
t HZOE
t DOE
t LZOE
CS
t ACS
t HZCS
t LZCS
DOUT
HIGH-Z
DATA VALID
CS_RD2.eps
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CS = VIL.
3. Address is valid prior to or coincident with CS LOW transitions.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
5
ISSI
IS62C256
®
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol
-45 ns
Min. Max.
Parameter
-70ns
Min.
Max.
Unit
tWC
Write Cycle Time
45
—
70
—
ns
tSCS
CS to Write End
35
—
60
—
ns
tAW
Address Setup Time to Write End
25
—
60
—
ns
tHA
Address Hold from Write End
0
—
0
—
ns
Address Setup Time
0
—
0
—
ns
tPWE
WE Pulse Width
25
—
55
—
ns
tSD
Data Setup to Write End
20
—
30
—
ns
tHD
Data Hold from Write End
0
—
0
—
ns
tSA
(4)
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CS LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CS Controlled, OE is HIGH or LOW) (1 )
t WC
VALID ADDRESS
ADDRESS
t SA
t SCS
t HA
CS
t AW
t PWE1
t PWE2
WE
t HZWE
DOUT
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
CS_WR1.eps
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
ISSI
IS62C256
®
AC WAVEFORMS
WRITE CYCLE NO. 2 (OE is HIGH During Write Cycle) (1,2)
t WC
ADDRESS
VALID ADDRESS
t HA
OE
CS
LOW
t AW
t PWE1
WE
t SA
DOUT
t HZWE
t LZWE
HIGH-Z
DATA UNDEFINED
t SD
t HD
DATAIN VALID
DIN
CS_WR2.eps
WRITE CYCLE NO. 3 (OE is LOW During Write Cycle) (1)
t WC
ADDRESS
VALID ADDRESS
OE
LOW
CS
LOW
t HA
t AW
t PWE2
WE
t SA
DOUT
t HZWE
DATA UNDEFINED
t LZWE
HIGH-Z
t SD
DIN
t HD
DATAIN VALID
CS_WR3.eps
Notes:
1. The internal write time is defined by the overlap of Cs LOW and WE LOW. All signals must be in valid states to initiate a Write,
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the write.
2. I/O will assume the High-Z state if OE = VIH.
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
7
ISSI
IS62C256
ORDERING INFORMATION
Commerical Range: 0°C to +70°C
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Speed
(ns)
Speed
(ns)
Order Part No.
Package
45
IS62C256-45T
IS62C256-45U
TSOP
Plastic SOP
70
IS62C256-70T
IS62C256-70U
TSOP
Plastic SOP
Order Part No.
Package
45
IS62C256-45TI
IS62C256-45UI
TSOP
Plastic SOP
70
IS62C256-70TI
IS62C256-70UI
TSOP
Plastic SOP
ISSI
®
®
Integrated Silicon Solution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: [email protected]
www.issi.com
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
SR072-1E
05/12/99
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