IS654A IS655A 3mm DIA. MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 4.0 DESCRIPTION The IS654A ( Gallium Arsenide Emitting Diode ) and the IS655A ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector end looking pair. 2 FEATURES l T-1 standard 3mm DIA. l Detector has dark plastic package for visible light cut out l LED has high output, Radiant Intensity :IE = 2mW/sr min. at IF = 20mA l All electrical parameters are 100% tested 1 5.3 1.0 12.7min. 2.6 1.5 3.0 APPLICATIONS l Floppy disk drives l Infrared applied systems l VCRs, Video camera l Optoelectronic switches 1.5 max ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) 1 Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 1.0 min. IS654A - Anode 1 2 - Cathode 60mA 5V 90mW 2 2 OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 50mW ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 IS655A - Emitter 1 2 1 - Collector ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail [email protected] http://www.isocom.com DB92102-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER IS654A Emitter IS655A Detector Forward Voltage (VF) Reverse Current (IR) Radiant Flux (IE) Peak Emission Wavelength Spectrum Radiation Bandwidth Beam Emission Angle MIN TYP MAX UNITS 1.2 1.5 940 50 ±20 IF = 20mA VR = 5V IF = 40mA IF = 40mA IF = 40mA 30 V IC = 1mA Ee = 0mW/cm2 Emitter-collector Breakdown (BVECO) 5 V IE = 100µA Ee = 0mW/cm2 nA VCE = 10V Ee = 0mW/cm2 mA 5V VCE Ee = 1mW/cm2 0.4 V IC = 0.5mA Ee = 0.5mW/cm2 40 35 µs µs VCC= 20V, IC= 1mA, RL = 1kΩ nm deg. IF = 40mA On-State Collector Current IC ( ON ) 100 1 Collector-emitter Saturation Voltage VCE(SAT) Rise Time Fall Time 7/12/00 V µA mW/sr nm nm deg. Collector-emitter Breakdown (BVCEO) ( Note 1 ) Collector-emitter Dark Current (ICEO) Note 1 1.6 100 TEST CONDITION tr tf 10 8 Peak Sensitivity Wavelength Beam Acceptance Angle 940 ±20 Special Selections are available on request. Please consult the factory. DB92102-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 60 Collector power dissipation P C (mW) 80 Forward current I F (mA) 70 60 50 40 30 20 10 0 50 40 30 20 10 0 -25 0 25 50 75 100 Ambient temperature TA ( °C ) -25 125 0 25 50 75 100 Ambient temperature TA ( °C ) Spectral Distribution Rise and Fall Time vs. Load Resistance 1.0 100 VCC = 20V IC = 1mA TA = 25°C Rise and fall time tr, tf ( µs) 90 Relative radiant intensity 125 0.5 80 70 60 tr 50 tf 40 30 20 10 0 840 940 0 1040 0 1 2 3 4 5 6 7 8 9 10 Load resistance RL (kΩ) Wavelength (nm) Relative Radiant Intensity vs. Forward Current Relative Collector Current vs. Irradiance 5.0 2.5 VCE = 5V 4.0 Relative collector current Relative radiant intensity 2.0 1.5 1.0 0.5 0 2.0 1.0 0 0 20 40 60 80 Forward current IF (mA) 7/12/00 3.0 100 0 1 2 3 4 2 Irradiance Ee ( mW/cm ) 5 DB92102-AAS/A2