Isahaya ISA1602AM1TR Small-signal transistor Datasheet

〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
For small type machine low frequency voltage
amplify application.
0.9
③
0.3
2.0
1.3
0.65 0.65
0.4
①
②
2.1
0.425 1.2 0.425
0.5
①
②
③
0.7
APPLICATION
ISA1602AM1
0.16
1.1
・Small collector to emitter saturation voltage
VCE(sat)=-0.3Vmax
2.5
1.5
0.8
・Excellent linearity of DC forward current gain.
0.5
2.9
1.9
0.95 0.95
FEATURE
ISA1235AC1
0.15
ISA1235AC1 ISA1602AM1 is super mini
package resin sealed silicon PNP epitaxial type
transistor.
These are designed for low frequency voltage
amplify application .
UNIT:mm
0~0.1
0~0.1
JEITA:SC-59
JEDEC:TO-236 resemblance
JEITA:SC-70
JEDEC:-
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
TERMINAL CONNECTOR
①:BASE
②:EMITTER
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
Parameter
VCBO
VEBO
VCEO
I C
PC
Tj
Tstg
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Ratings
ISA1235AC1 ISA1602AM1
-60
-6
-50
-200
200
+150
-55~+150
MARKING
UNIT
V
V
V
mA
mW
℃
℃
. MF
hFE ITEM
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Symbol
V(BR)CEO
I CBO
I EBO
hFE*
hFE
VCE(sat)
fT
Cob
NF
Parameter
Collector to Emitter Breakdown voltage
Collector cut off current
Emitter cut off current
DC forward current gain
DC forward current gain
Collector to Emitter saturation voltage
Gain bandwidth product
Collector output capacitance
Noise Figure
Test conditions
I C=-100μA,RBE=∞
VCB=-60V,I E =0
VEB=-6V,I C =0
VCE=-6V,I C =-1mA
VCE=-6V,I C =-0.1mA
I C =-100mA,I B =-10mA
VCE=-6V,I E =10mA
VCB=-6V,I E =0,f=1MHz
VCE=-6V,I E =0.3mA,
f=100Hz,RG=10kΩ
Min
-50
Limits
Ave
-0.1
-0.1
500
150
90
-0.3
200
4.0
20
*:It shows hFE classification in below table.
hFE
ISAHAYA ELECTRONICS CORPORATION
Max
E
150~300
UNIT
V
μA
μA
-
-
V
MHz
pF
dB
F
250~500
〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
COMMON EMITTER OUTPUT
COMMON EMITTER TRANSFER
-50
50
IB=0.18mA
IB=0.20mA
IB=0.16mA
-40
COLLECTOR CURRENT IC[mA]
IB=0.12mA
40
COLLECTOR CURRENT IC(mA)
VCE=-6V
IB=0.14mA
IB=0.10mA
30
IB=0.08mA
IB=0.06mA
20
IB=0.04mA
10
IB=0.02mA
-30
-20
-10
IB=0
0
0
1
2
3
4
-0
5
-0.0
COLLECTOR・EMITTER VOLTAGE VCE(V)
-0.2
-0.4
-0.6
-0.8
-1.0
BASE TO EMITTER VOLTAGE VBE[V]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
400
VCE=-6V
100(@IC--1mA)
VCE=-6V
GAIN BAND WIDTH PRODUCT fT[MHz]
DC FORWARD CURRENT GAIN hFE
1000
100
10
-0.1
300
200
100
0
-1
-10
-100
0.1
-1000
1
10
100
EMITTER CURRENT IE[mA]
COLLECTOR CURRENT IC[mA]
COLLECTOR DISSIPATION VS AMBIENT TEMPERATURE
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
250
COLLECTOR DISSIPATION Pc[mW]
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
100
10
1
0
-0.1
200
150
100
50
0
-1
-10
COLLECTOR TO BASE VOLTAGE VCB[V]
-100
0
50
100
AMBIENT TEMPERATURE Ta[℃]
ISAHAYA ELECTRONICS CORPORATION
150
〈SMALL-SIGNAL TRANSISTOR〉
ISA1235AC1 ISA1602AM1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
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Jan.2007
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