Intersil ISL71823ASRHVD Single event and total dose hardened, high-speed, dual output pwm Datasheet

IS-1825ASRH, ISL71823ASRH
®
Data Sheet
September 25, 2008
Single Event and Total Dose Hardened,
High-Speed, Dual Output PWMs
FN9065.3
Features
• Electrically Screened to DSCC SMD # 5962-02511
The single event and total dose hardened IS-1825ASRH and
ISL71823ASRH pulse width modulators are designed to be
used in high frequency, switching power supplies in either
voltage or current-mode configurations. Both designs
include a precision voltage reference, a low power start-up
circuit, a high frequency oscillator, a wide-band error
amplifier and a fast current-limit comparator.
The IS-1825ASRH features dual, alternating outputs
operating from zero to less than 50% duty-cycle, while the
ISL71823ASRH features dual, in-phase outputs operating
from zero to less than 100% duty cycle.
Constructed with the Intersil Rad-hard Silicon Gate (RSG)
dielectrically isolated BiCMOS process, these devices are
immune to single event latch-up and have been specifically
designed to provide a high level of immunity to single event
transients. All specified parameters are guaranteed and
tested for 300krad(Si) total dose performance.
• QML Qualified per MIL-PRF-38535 Requirements
• Radiation Environment
- Total Dose. . . . . . . . . . . . . . . . . . . . . 300krad(SI) (max)
- Latch-up Immune . . . . . . . . . . . . . Dielectrically Isolated
- SEU immune . . . . . . . . . . LET = 35MeV/mg/cm2(max)
• Oscillator Frequency . . . . . . . . . . . . . . . . . . . .1MHz(max)
• High Output Drive Current . . . . . . . . . . . . . . .1A peak(typ)
• Low Start-up Current . . . . . . . . . . . . . . . . . . . 300µA(max)
• Undervoltage Lockout
- Start Threshold . . . . . . . . . . . . . . . . . . . . . . . .8.8V(max)
- Stop Threshold . . . . . . . . . . . . . . . . . . . . . . . . 7.6V(min)
- Hysteresis. . . . . . . . . . . . . . . . . . . . . . . . . . 300mV(min)
• Improved Soft-Start Function Compared with Commercial
1825A/1823A Types
• Pulse-by-Pulse Current Limiting
Detailed Electrical Specifications for these devices are
contained in SMD 5962-02511. A “hot-link” is provided
on our website for downloading the SMD.
• Latched Overcurrent Comparator with Full Cycle Restart
• Programmable Leading Edge Blanking
Applications
• Voltage or Current-Mode Switching Power Supplies
• Control of High Current MOSFET Drivers
• Motor Speed and Direction Control
Pinouts
IS9-1825ASRH, ISL71823ASRHQF
(CDFP4-F20 FLATPACK)
TOP VIEW
IS1-1825ASRH, ISL71823ASRHQD
(CDIP2-T16 SBDIP)
TOP VIEW
INV 1
NON-INV 2
16 VREF
NC
1
20
VREF
15 VCC
INV
2
19
VCC
NON-INV
3
18
OUT B
E/A OUT
4
17
PGND
CLK/LEB
5
16
VC
14 OUT B
E/A OUT 3
CLK/LEB 4
13 VC
RT 5
12 PGND
RT
6
15
VC
CT 6
11 OUT A
CT
7
14
PGND
RAMP
8
13
OUT A
SS
9
12
GND
NC
10
11
ILIM/SD
10 GND
RAMP 7
9 ILIM/SD
SS 8
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2002, 2005, 2008. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
IS-1825ASRH, ISL71823ASRH
Ordering Information
INTERNAL
MKT. NUMBER
ORDERING NUMBER
TEMP. RANGE (°C)
PACKAGE
PKG DWG. #
IS0-1825ASRH/SAMPLE
IS0-1825ASRH/SAMPLE
-50 to +125
5962F0251101V9A
IS0-1825ASRH-Q
-50 to +125
5962F0251101QEC
IS1-1825ASRH-8
-50 to +125
16 Ld SBDIP
D16.3
5962F0251101QXC
IS9-1825ASRH-8
-50 to +125
20 Ld Flatpack
K20.A
5962F0251101VEC
IS1-1825ASRH-Q
-50 to +125
16 Ld SBDIP
D16.3
5962F0251101VXC
IS9-1825ASRH-Q
-50 to +125
20 Ld Flatpack
K20.A
IS1-1825ASRH/Proto
IS1-1825ASRH/Proto
-50 to +125
16 Ld SBDIP
D16.3
IS9-1825ASRH/Proto
IS9-1825ASRH/Proto
-50 to +125
20 Ld Flatpack
K20.A
5962F0251102QEC
ISL71823ASRHQD
-50 to +125
16 Ld SBDIP
D16.3
5962F0251102QXC
ISL71823ASRHQF
-50 to +125
20 Ld Flatpack
K20.A
5962F0251102VEC
ISL71823ASRHVD
-50 to +125
16 Ld SBDIP
D16.3
5962F0251102VXC
ISL71823ASRHVF
-50 to +125
20 Ld Flatpack
K20.A
ISL71823ASRHD/Proto
ISL71823ASRHD/Proto
-50 to +125
16 Ld SBDIP
D16.3
ISL71823ASRHF/Proto
ISL71823ASRHF/Proto
-50 to +125
20 Ld Flatpack
K20.A
Typical Performance Curves
10k
100
C220pF
DMAX
90
C1000pF
1k
DMAX (%)
FREQUENCY (Hz)
C470pF
C2200pF
C4700pF
80
70
100
60
C10nF
10
C22nF
1
10
Rt TIMING RESISTANCE (kΩ)
FIGURE 1. OSCILLATOR FREQUENCY vs Rt and Ct
2
100
50
1
10
Rt TIMING RESISTANCE (kΩ)
100
FIGURE 2. MAXIMUM DUTY CYCLE vs Rt
FN9065.3
September 25, 2008
IS-1825ASRH, ISL71823ASRH
Die Characteristics
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
DIE DIMENSIONS:
4310µm x 5840µm (170 mils x 230 mils)
Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)
Backside Finish:
Silicon
INTERFACE MATERIALS
ASSEMBLY RELATED INFORMATION
Glassivation
Substrate Potential:
Type: Phosphorus Silicon Glass (PSG)
Thickness: 8.0kA ± 1.0kA
Unbiased (DI)
Top Metallization
ADDITIONAL INFORMATION
Type: AlSiCu
Thickness: 16.0kA ± 2kA
Worst Case Current Density:
<2.0 x 105 A/cm2
Transistor Count:
585
Metallization Mask Layout
IS-1825ASRH/ISL71823ASRH
RT
CLK/LEB
CT
E/A OUT
RAMP
NON-INV
INV
SS
RT
ILIM/SD
VREF
OGND
GND
VCC
OUT A
OUT B
PGND
PGND
VC
VC
Notes:
1. Both the OGND (oscillator ground) and the GND (control circuit ground) pads must be bonded to ground.
These pads are both bonded to the GND pin on the packaged devices.
2. All double-sized bond pads must be double bonded for current sharing purposes.
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
3
FN9065.3
September 25, 2008
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