Intersil ISL84522IB Low-voltage, single and dual supply, quad spst, analog switch Datasheet

ISL84521, ISL84522, ISL84523
®
Data Sheet
August 2004
Low-Voltage, Single and Dual Supply,
Quad SPST, Analog Switches
Features
• Drop-in Replacements for MAX4521 - MAX4523
The Intersil ISL84521, ISL84523, ISL84523 devices are
CMOS, precision, quad analog switches designed to operate
from a single +2V to +12V supply or from a ±2V to ±6V supply.
Targeted applications include battery powered equipment that
benefit from the devices’ low power consumption (<1µW), low
leakage currents (1nA max), and fast switching speeds
(tON = 45ns, tOFF = 15ns). A12Ω maximum RON flatness
ensures signal fidelity, while channel-to-channel mismatch is
guaranteed to be less than 4Ω.
The ISL84521, ISL84522, ISL84523 are quad
single-pole/ single-throw (SPST) devices. The ISL84521 has
four normally closed (NC) switches; the ISL84522 has four
normally open (NO) switches; the ISL84523 has two NO and
two NC switches and can be used as a dual SPDT, or a dual
2:1 multiplexer.
Table summarizes the performance of this family. For higher
performance, pin compatible versions and 3mm x 3mm Quad
No-Lead Flatpack (QFN) package see the ISL43140,
ISL43142 data sheet.
TABLE 1. FEATURES AT A GLANCE
ISL84521
ISL84522
ISL84523
Number of Switches
4
4
4
Configuration
All NC
All NO
2 NC/2 NO
±5V RON
65Ω
65Ω
65Ω
±5V tON/tOFF
45ns/15ns
45ns/15ns
45ns/15ns
5V RON
125Ω
125Ω
125Ω
5V tON/tOFF
60ns/20ns
60ns/20ns
60ns/20ns
3V RON
260Ω
260Ω
260Ω
3V tON/tOFF
120ns/40ns
120ns/40ns
120ns/40ns
Packages
16 Ld SOIC (N), 16 Ld TSSOP
FN6031.3
• Four Separately Controlled SPST Switches
• Pin Compatible with DG411, DG412, DG413
• ON Resistance (RON Max.) . . . . . . . . . . . . . . . . . . . 100Ω
• RON Matching Between Channels. . . . . . . . . . . . . . . . . . <1Ω
• Low Power Consumption (PD) . . . . . . . . . . . . . . . . . . . .<1µW
• Low Leakage Current (Max at 85oC) . . . . . . . . . . . . 10nA
• Fast Switching Action
- tON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45ns
- tOFF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15ns
• Break before Make Timing
• Minimum 2000V ESD Protection per Method 3015.7
• TTL, CMOS Compatible
• Pb-free available
Applications
• Battery Powered, Handheld, and Portable Equipment
- Cellular/Mobile Phones
- Pagers
- Laptops, Notebooks, Palmtops
• Communications Systems
- Military Radios
- RF “Tee” Switches
• Test Equipment
- Ultrasound
- Electrocardiograph
• Heads-Up Displays
• Audio and Video Switching
• General Purpose Circuits
- +3V/+5V DACs and ADCs
- Digital Filters
- Operational Amplifier Gain Switching Networks
- High Frequency Analog Switching
- High Speed Multiplexing
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
• Application Note AN557 “Recommended Test Procedures
for Analog Switches”
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
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Copyright © Intersil Americas Inc. 2003, 2004. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL84521, ISL84522, ISL84523
Pinouts
(Note 1)
ISL84521 (SOIC, TSSOP)
TOP VIEW
ISL84522 (SOIC, TSSOP)
TOP VIEW
16 IN2
IN1 1
14 NC2
NC1 3
15 COM2
14 NO2
NO1 3
13 V+
V- 4
13 V+
V- 4
16 IN2
IN1 1
COM1 2
15 COM2
COM1 2
GND 5
12 N.C.
GND 5
12 N.C.
NC4 6
11 NC3
NO4 6
11 NO3
10 COM3
COM4 7
10 COM3
COM4 7
9 IN3
IN4 8
9 IN3
IN4 8
ISL84523 (SOIC, TSSOP)
TOP VIEW
IN1 1
COM1 2
NO1 3
V- 4
16 IN2
15 COM2
14 NC2
13 V+
GND 5
12 N.C.
NO4 6
11 NC3
COM4 7
IN4 8
10 COM3
9 IN3
NOTE:
1. Switches Shown for Logic “0” Input.
Truth Table
Ordering Information
ISL84521
ISL84522
LOGIC
SW 1, 2, 3, 4
SW 1, 2, 3, 4
SW 1, 4
SW 2, 3
0
On
Off
Off
On
ISL84521IB
1
Off
On
On
Off
NOTE:
ISL84523
Logic “0” ≤ 0.8V. Logic “1” ≥ 2.4V.
Pin Descriptions
PIN
FUNCTION
V+
Positive Power Supply Input
V-
Negative Power Supply Input. Connect to GND for
Single Supply Configurations.
GND
IN
COM
Ground Connection
Digital Control Input
PART NO.
TEMP.
RANGE
(oC)
PACKAGE
PKG.
DWG. #
-40 to 85
16 Ld SOIC (N)
M16.15
ISL84521IBZ (Note 2)
-40 to 85
16 Ld SOIC (N) (Pb-free) M16.15
ISL84521IV
-40 to 85
16 Ld TSSOP
M16.173
ISL84521IVZ (Note 2)
-40 to 85
16 Ld TSSOP (Pb-free)
M16.173
ISL84522IB
-40 to 85
16 Ld SOIC (N)
M16.15
ISL84522IBZ (Note 2)
-40 to 85
16 Ld SOIC (N) (Pb-free) M16.15
ISL84522IV
-40 to 85
16 Ld TSSOP
M16.173
ISL84522IVZ (Note 2)
-40 to 85
16 Ld TSSOP (Pb-free)
M16.173
ISL84523IB
-40 to 85
16 Ld SOIC (N)
M16.15
ISL84523IBZ (Note 2)
-40 to 85
16 Ld SOIC (N) (Pb-free) M16.15
ISL84523IV
-40 to 85
16 Ld TSSOP
M16.173
ISL84523IVZ (Note 2)
-40 to 85
16 Ld TSSOP (Pb-free)
M16.173
Analog Switch Common Pin
*Add “-T” suffix to part number for tape and reel packaging.
NO
Analog Switch Normally Open Pin
NC
Analog Switch Normally Closed Pin
N.C.
No Internal Connection
NOTE:
2. Intersil Pb-free products employ special Pb-free material sets; molding compounds/die
attach materials and 100% matte tin plate termination finish, which is compatible with
both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL
classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free
requirements of IPC/JEDEC J Std-020B.
2
ISL84521, ISL84522, ISL84523
Absolute Maximum Ratings
Thermal Information
V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V
V+ to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to15V
V- to GND. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -15 to 0.3V
All Other Pins (Note 3) . . . . . . . . . . . . . .((V-) - 0.3V) to ((V+) + 0.3V)
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . 10mA
Peak Current, IN, NO, NC, or COM
(Pulsed 1ms, 10% Duty Cycle, Max) . . . . . . . . . . . . . . . . . . 20mA
ESD Rating (Per MIL-STD-883 Method 3015). . . . . . . . . . . . . > 2kV
Thermal Resistance (Typical, Note 4)
θJA (oC/W)
16 Ld SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . .
115
16 Ld TSSOP Package . . . . . . . . . . . . . . . . . . . . . .
150
Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC
Moisture Sensitivity (See Technical Brief TB363)
All Packages. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 1
Maximum Storage Temperature Range . . . . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC
(Lead Tips Only)
Operating Conditions
Temperature Range
ISL8452XIX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40oC to 85oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. Signals on NC, NO, COM, or IN exceeding V+ or V- are clamped by internal diodes. Limit forward diode current to maximum current ratings.
4. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
Electrical Specifications +5V Supply
PARAMETER
Test Conditions: VSUPPLY = ±4.5V to ±5.5V, GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 5),
Unless Otherwise Specified
TEST CONDITIONS
TEMP
(oC)
(NOTE 6)
MIN
Full
V-
-
V+
V
25
-
65
100
Ω
TYP
(NOTE 6)
MAX
UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
ON Resistance, RON
VS = ±5V, ICOM = 1.0mA, VNO or VNC = ±3V (Figure 5)
RON Matching Between Channels,
∆RON
VS = ±5V, ICOM = 1.0mA, VNO or VNC = ±3V
RON Flatness, RFLAT(ON)
VS = ±5V, ICOM = 1.0mA, VNO or VNC = ±3V (Note 8)
NO or NC OFF Leakage Current,
INO(OFF) or INC(OFF)
VS = ±5.5V, VCOM = ±4.5V, VNO or VNC = +4.5V
(Note 7)
COM OFF Leakage Current,
ICOM(OFF)
VS = ±5.5V, VCOM = ±4.5V, VNO or VNC = +4.5V
(Note 7)
COM ON Leakage Current,
ICOM(ON)
VS = ±5.5V, VCOM = VNO or VNC = ±4.5V (Note 7)
Full
-
-
125
Ω
25
-
1
4
Ω
Full
-
-
6
Ω
25
-
7
12
Ω
Full
-
-
15
Ω
nA
25
-1
0.01
1
Full
-10
-
10
nA
25
-1
0.01
1
nA
Full
-10
-
10
nA
25
-2
0.01
2
nA
Full
-20
-
20
nA
Full
-
1.6
2.4
V
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, VINH
Input Voltage Low, VINL
Input Current, IINH, IINL
Full
0.8
1.6
-
V
VS = ±5.5V, VIN = 0V or V+
Full
-1
0.03
1
µA
VS = ±4.5V, VNO or VNC = ±3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 1)
25
-
45
80
ns
Full
-
-
100
ns
VS = ±4.5V, VNO or VNC = ±3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 1)
25
-
15
30
ns
Full
-
-
40
ns
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
Break-Before-Make Time Delay
(ISL84523), tD
VS = ±5.5V, VNO or VNC = ±3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 3)
25
5
20
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2)
25
-
1
5
pC
NO or NC OFF Capacitance, COFF f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7)
25
-
2
-
pF
COM OFF Capacitance,
CCOM(OFF)
f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7)
25
-
2
-
pF
COM ON Capacitance, CCOM(ON)
f = 1MHz, VNO or VNC = VCOM = 0V (Figure 7)
25
-
5
-
pF
3
ISL84521, ISL84522, ISL84523
Electrical Specifications +5V Supply
PARAMETER
Test Conditions: VSUPPLY = ±4.5V to ±5.5V, GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 5),
Unless Otherwise Specified (Continued)
TEST CONDITIONS
OFF Isolation
RL = 50Ω, CL = 15pF, f = 100kHz,
VNO or VNC = 1VRMS, (See Figures 4 and 6)
Crosstalk, (Note 9)
TEMP
(oC)
(NOTE 6)
MIN
TYP
(NOTE 6)
MAX
UNITS
25
-
>90
-
dB
25
-
<-90
-
dB
Full
±2
-
±6
V
25
-1
0.05
1
µA
Full
-1
-
1
µA
25
-1
0.05
1
µA
Full
-1
-
1
µA
POWER SUPPLY CHARACTERISTICS
Power Supply Range
VS = ±5.5V, VIN = 0V or V+, Switch On or Off
Positive Supply Current, I+
Negative Supply Current, INOTES:
5. VIN = Input voltage to perform proper function.
6. The algebraic convention, whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
7. Leakage parameter is 100% tested at high temp, and guaranteed by correlation at 25oC.
8. Flatness is defined as the delta between the maximum and minimum RON values over the specified voltage range.
9. Between any two switches.
Electrical Specifications 5V Supply
PARAMETER
Test Conditions: V+ = +4.5V to +5.5V, V- = GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 5),
Unless Otherwise Specified
TEST CONDITIONS
TEMP
(oC)
MIN
(NOTE 6)
TYP
Full
0
-
V+
V
MAX
(NOTE 6) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
V+ = 4.5V, ICOM = 1.0mA, VNO or VNC = 3.5V
(Figure 5)
25
-
125
200
Ω
Full
-
-
250
Ω
RON Matching Between Channels,
∆RON
V+ = 5V, ICOM = 1.0mA, VNO or VNC = 3.5V
25
-
2
8
Ω
NO or NC OFF Leakage Current,
INO(OFF) or INC(OFF)
V+ = 5.5V, VCOM = 1V, 4.5V, VNO or VNC = 4.5V, 1V
(Note 7)
COM OFF Leakage Current,
ICOM(OFF)
V+ = 5.5V, VCOM = 1V, 4.5V, VNO or VNC = 4.5V, 1V
(Note 7)
COM ON Leakage Current,
ICOM(ON)
V+ = 5.5V, VCOM = 1V, 4.5V (Note 7)
ON Resistance, RON
Full
-
-
10
Ω
25
-1
0.01
1
nA
Full
-10
-
10
nA
25
-1
0.01
1
nA
Full
-10
-
10
nA
25
-2
-
2
nA
Full
-20
-
20
nA
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, VINH
Full
-
1.6
2.4
V
Input Voltage Low, VINL
Full
0.8
1.6
-
V
V+ = 5.5V, VIN = 0V or V+
Full
-1
0.03
1
µA
Turn-ON Time, tON
V+ = 4.5V, VNO or VNC = 3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 1)
25
-
60
100
ns
Turn-OFF Time, tOFF
V+ = 4.5V, VNO or VNC = 3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 1)
Input Current, IINH, IINL
DYNAMIC CHARACTERISTICS
Full
-
-
150
ns
25
-
20
50
ns
Full
-
-
75
ns
Break-Before-Make Time Delay
(ISL84523), tD
V+ = 5.5V, VNO or VNC = 3V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 3)
25
10
30
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2)
25
-
1
5
pC
4
ISL84521, ISL84522, ISL84523
Electrical Specifications 5V Supply
Test Conditions: V+ = +4.5V to +5.5V, V- = GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 5),
Unless Otherwise Specified (Continued)
PARAMETER
TEST CONDITIONS
TEMP
(oC)
MIN
(NOTE 6)
TYP
MAX
(NOTE 6) UNITS
POWER SUPPLY CHARACTERISTICS
Positive Supply Current, I+
V+ = 5.5V, VIN = 0V or V+, Switch On or Off
Negative Supply Current, I-
Electrical Specifications 3V Supply
25
-1
0.05
1
µA
Full
-1
-
1
µA
25
-1
0.05
1
µA
Full
-1
-
1
µA
Test Conditions: V+ = +2.7V to +3.6V, V- = GND = 0V, VINH = 2.4V, VINL = 0.8V (Note 5),
Unless Otherwise Specified
PARAMETER
TEST CONDITIONS
TEMP
(oC)
MIN
(NOTE 6)
TYP
Full
0
-
V+
V
25
-
260
500
Ω
Full
-
-
600
Ω
MAX
(NOTE 6) UNITS
ANALOG SWITCH CHARACTERISTICS
Analog Signal Range, VANALOG
V+ = 2.7V, ICOM = 0.1mA, VNO or VNC = 1V
ON Resistance, RON
DIGITAL INPUT CHARACTERISTICS
Input Voltage High, VINH
Full
-
1.6
2.4
V
Input Voltage Low, VINL
Full
0.8
1.6
-
V
V+ = 3.6V, VIN = 0V or V+
Full
-1
0.03
1
µA
V+ = 2.7V, VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF,
VIN = 0 to V+ (Figure 1)
25
-
120
250
ns
Full
-
-
300
ns
25
-
40
80
ns
Input Current, IINH, IINL
DYNAMIC CHARACTERISTICS
Turn-ON Time, tON
Turn-OFF Time, tOFF
V+ = 2.7V, VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF,
VIN = 0 to V+ (Figure 1)
Full
-
-
100
ns
Break-Before-Make Time Delay
(ISL84523), tD
V+ = 3.6V, VNO or VNC = 1.5V, RL = 300Ω, CL = 35pF,
VIN = 0 to 3V (Figure 3)
25
15
50
-
ns
Charge Injection, Q
CL = 1.0nF, VG = 0V, RG = 0Ω (Figure 2)
25
-
0.5
5
pC
POWER SUPPLY CHARACTERISTICS
V+ = 3.6V, VIN = 0V or V+, Switch On or Off
Positive Supply Current, I+
Negative Supply Current, I-
25
-1
0.05
1
µA
Full
-1
-
1
µA
25
-1
0.05
1
µA
Full
-1
-
1
µA
Test Circuits and Waveforms
3V
LOGIC
INPUT
V+
tr < 20ns
tf < 20ns
50%
0V
C
SWITCH
INPUT
tOFF
VOUT
90%
SWITCH
OUTPUT
VOUT
NO OR NC
VNX
SWITCH VNX
INPUT
C
COM
IN
90%
RL
300Ω
GND
0V
LOGIC
INPUT
tON
V-
Logic input waveform is inverted for switches that have the opposite
logic sense.
Repeat test for all switches. CL includes fixture and stray
capacitance.
RL
V OUT = V (NO or NC) -----------------------------R L + R ( ON )
FIGURE 1B. TEST CIRCUIT
FIGURE 1A. MEASUREMENT POINTS
FIGURE 1. SWITCHING TIMES
5
C
CL
35pF
ISL84521, ISL84522, ISL84523
Test Circuits and Waveforms (Continued)
V+
SWITCH
OUTPUT
VOUT
∆VOUT
RG
C
NO OR NC
VOUT
COM
3V
ON
ON
LOGIC
INPUT
VG
OFF
GND
IN
0V
Q = ∆VOUT x CL
LOGIC
INPUT
C
V-
Logic input waveform is inverted for switches that have the opposite
logic sense.
FIGURE 2A. MEASUREMENT POINTS
CL
Repeat test for all switches. CL includes fixture and stray
capacitance.
FIGURE 2B. TEST CIRCUIT
FIGURE 2. CHARGE INJECTION
V+
C
C
3V
LOGIC
INPUT
VOUT1
NO1
VNX
COM1
VOUT2 RL1
300Ω
NC2
0V
COM2
CL1
35pF
IN1
IN2
0V
LOGIC
INPUT
90%
SWITCH
OUTPUT
VOUT2
RL2
300Ω
90%
90%
SWITCH
OUTPUT
VOUT1
0V
CL2
35pF
GND
90%
C
tD
tD
V-
CL includes fixture and stray capacitance.
Reconfigure accordingly to test SW3 and SW4.
FIGURE 3B. TEST CIRCUIT
FIGURE 3A. MEASUREMENT POINTS
FIGURE 3. BREAK-BEFORE-MAKE TIME (ISL84523 ONLY)
V+
V+
C
C
RON = V1/1mA
SIGNAL
GENERATOR
NO OR NC
NO OR NC
VNX
IN
0V OR 2.4V
1mA
COM
ANALYZER
0.8V OR 2.4V
IN
V1
COM
GND
GND
RL
C
C
V-
V-
Repeat test for all switches.
Repeat test for all switches.
FIGURE 4. OFF ISOLATION TEST CIRCUIT
6
FIGURE 5. RON TEST CIRCUIT
ISL84521, ISL84522, ISL84523
Test Circuits and Waveforms (Continued)
V+
C
SIGNAL
GENERATOR
NO1 OR NC1
V+
50Ω
COM1
NO OR NC
IN2
IN
0V or 2.4V
IN2 0V OR 2.4V
COM2
ANALYZER
NO
CONNECTION
NO2 OR NC2
0V OR 2.4V
IMPEDANCE
ANALYZER
COM
GND
GND
RL
C
V-
V-
FIGURE 6. CROSSTALK TEST CIRCUIT
Detailed Description
The ISL84521, ISL84522, ISL84523 quad analog switches
offer precise switching capability from a bipolar ±2V to ±6V or
a single 2V to 12V supply with low on-resistance (65Ω) and
high speed switching (tON = 45ns, tOFF = 15ns). The devices
are especially well suited to portable battery powered
equipment thanks to the low operating supply voltage (2V),
low power consumption (1µW) and low leakage currents (1nA
max). High frequency applications also benefit from the wide
bandwidth, and the very high OFF isolation and crosstalk
rejection.
Supply Sequencing And Overvoltage Protection
As with any CMOS device, proper power supply sequencing
is required to protect the device from excessive input
currents which might permanently damage the IC. All I/O
pins contain ESD protection diodes from the pin to V+ and to
V- (Figure 8). To prevent forward biasing these diodes, V+
and V- must be applied before any input signals, and input
signal voltages must remain between V+ and V-. If these
conditions cannot be guaranteed, then one of the following
two protection methods should be employed.
Logic inputs can easily be protected by adding a 1kΩ
resistor in series with the input (Figure 8). The resistor limits
the input current below the threshold that produces
permanent damage, and the sub-microamp input current
produces an insignificant voltage drop during normal
operation.
Adding a series resistor to the switch input defeats the
purpose of using a low RON switch, so two small signal
diodes can be added in series with the supply pins to provide
overvoltage protection for all pins (Figure 8). These
additional diodes limit the analog signal from 1V below V+ to
1V above V-. The low leakage current performance is
7
FIGURE 7. CAPACITANCE TEST CIRCUIT
unaffected by this approach, but the switch resistance may
increase, especially at low supply voltages.
OPTIONAL PROTECTION
DIODE
V+
OPTIONAL
PROTECTION
RESISTOR
INX
VNO OR NC
VCOM
VOPTIONAL PROTECTION
DIODE
FIGURE 8. OVERVOLTAGE PROTECTION
Power-Supply Considerations
The ISL8452X construction is typical of most CMOS analog
switches, in that they have three supply pins: V+, V-, and
GND. V+ and V- drive the internal CMOS switches and set
their analog voltage limits, so there are no connections
between the analog signal path and GND. Unlike switches
with a 13V maximum supply voltage, the ISL8452X 15V
maximum supply voltage provides plenty of room for the
10% tolerance of 12V supplies (±6V or 12V single supply),
as well as room for overshoot and noise spikes.
This family of switches performs equally well when operated
with bipolar or single voltage supplies, and bipolar supplies
need not be symmetrical. The minimum recommended
supply voltage is 2V or ±2V. It is important to note that the
input signal range, switching times, and ON-resistance
degrade at lower supply voltages. Refer to the electrical
specification tables and Typical Performance Curves for
details.
ISL84521, ISL84522, ISL84523
V+ and GND power the internal logic (thus setting the digital
switching point) and level shifters. The level shifters convert
the logic levels to switched V+ and V- signals to drive the
analog switch gate terminals, so switch parameters especially RON - are strong functions of both supplies.
Logic-Level Thresholds
V+ and GND power the internal logic stages, so V- has no
affect on logic thresholds. This switch family is TTL
compatible (0.8V and 2.4V) over a V+ supply range of 2.5V
to 10V. At 12V the VIH level is about 2.7V, so for best results
use a logic family the provides a VOH greater than 3V.
The digital input stages draw supply current whenever the
digital input voltage is not at one of the supply rails. Driving
the digital input signals from GND to V+ with a fast transition
time minimizes power dissipation.
High-Frequency Performance
In 50Ω systems, signal response is reasonably flat even past
300MHz (Figure 15), with a small signal -3dB bandwidth in
excess of 400MHz, and a large signal bandwidth exceeding
300MHz.
An off switch acts like a capacitor and passes higher
frequencies with less attenuation, resulting in signal
feedthrough from a switch’s input to its output. OFF Isolation
is the resistance to this feedthrough, while Crosstalk
indicates the amount of feedthrough from one switch to
another. Figure 16 details the high OFF Isolation and
Crosstalk rejection provided by this family. At 10MHz, OFF
isolation is about 50dB in 50Ω systems, decreasing
approximately 20dB per decade as frequency increases.
Higher load impedances decrease OFF Isolation and
Crosstalk rejection due to the voltage divider action of the
switch OFF impedance and the load impedance.
Leakage Considerations
Reverse ESD protection diodes are internally connected
between each analog-signal pin and both V+ and V-. One
of these diodes conducts if any analog signal exceeds V+
or V-.
Virtually all the analog leakage current comes from the ESD
diodes to V+ or V-. Although the ESD diodes on a given
signal pin are identical and therefore fairly well balanced,
they are reverse biased differently. Each is biased by either
V+ or V- and the analog signal. This means their leakages
will vary as the signal varies. The difference in the two diode
leakages to the V+ and V- pins constitutes the analog-signalpath leakage current. All analog leakage current flows
between each pin and one of the supply terminals, not to the
other switch terminal. This is why both sides of a given
switch can show leakage currents of the same or opposite
polarity. There is no connection between the analog signal
paths and GND.
Typical Performance Curves TA = 25oC, Unless Otherwise Specified
90
300
70
60
50
40
250
85oC
200
25oC
150
-40oC
100
V- = 0V
200
85oC
150
25oC
85oC
25oC
-40oC
-40oC
V+ = 2.7V
V- = 0V
50
225
85oC
175
125
75
140
100
50
ICOM = 1mA
250
RON (Ω)
RON (Ω)
VCOM = (V+) - 1V
ICOM = 1mA
V- = -5V
80
85oC
110
V+ = 5V
25oC
V+ = 3.3V
-40oC
V- = 0V
V- = 0V
25oC
80
0
3
4
5
6
7
8
V+ (V)
9
10
11
FIGURE 9. ON RESISTANCE vs SUPPLY VOLTAGE
8
12
50
-40oC
0
1
2
3
VCOM (V)
4
FIGURE 10. ON RESISTANCE vs SWITCH VOLTAGE
5
ISL84521, ISL84522, ISL84523
Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued)
180
5
VS = ±2V
ICOM = 1mA
140
85oC
25oC
2.5
100
-40oC
V+ = 3.3V
VS = ±3V
100
85oC
0
25oC
80
Q (pC)
RON (Ω)
60
120
-40oC
60
V+ = 5V
2.5
40
VS = ±5V
90
VS = ±5V
85oC
70
-5
25oC
50
-7.5
-40oC
30
-5
-4
-3
-2
-1
0
1
2
3
4
-5
-2.5
0
VCOM (V)
5
VCOM (V)
250
200
50
tOFF (ns)
V- = 0V
250
85oC
25
-40oC
0
300
25oC
50
85oC
-40oC
0
50
V- = 0V
40
200
85oC
150
25oC
0
10
2
3
25oC
20
-40oC
50
85oC
30
100
4
5
6
7
8
9
10
11
V+ (V)
FIGURE 13. TURN - ON TIME vs SUPPLY VOLTAGE
9
12
VCOM = (V+) - 1V
V- = -5V
-40oC
75
25oC
100
25oC
100
-40oC
150
tON (ns)
125
VCOM = (V+) - 1V
V- = -5V
5
FIGURE 12. CHARGE INJECTION vs SWITCH VOLTAGE
FIGURE 11. ON RESISTANCE vs SWITCH VOLTAGE
25oC
2.5
-40oC
2
3
4
5
6
7
8
9
10
11
V+ (V)
FIGURE 14. TURN - OFF TIME vs SUPPLY VOLTAGE
12
ISL84521, ISL84522, ISL84523
-10
VIN = 0.2VP-P
GAIN
-30
VIN = 5VP-P
-3
0
PHASE
45
VIN = 0.2VP-P
90
VIN = 5VP-P
135
180
RL = 50Ω
10
100
FREQUENCY (MHz)
FIGURE 15. FREQUENCY RESPONSE
Die Characteristics
SUBSTRATE POTENTIAL (POWERED UP):
VTRANSISTOR COUNT:
ISL84521: 188
ISL84522: 188
ISL84523: 188
PROCESS:
Si Gate CMOS
10
600
CROSSTALK (dB)
0
20
RL = 50Ω
30
-40
40
-50
50
-60
60
ISOLATION
-70
70
-80
80
OFF ISOLATION (dB)
3
1
10
V+ = 3V to 12V or
-20 VS = ±2V to ±5V
VS = ±5V
PHASE (DEGREES)
NORMALIZED GAIN (dB)
Typical Performance Curves TA = 25oC, Unless Otherwise Specified (Continued)
CROSSTALK
-90
90
-100
100
-110
1k
10k
100k
1M
10M
100M
FREQUENCY (Hz)
FIGURE 16. CROSSTALK AND OFF ISOLATION
110
500M
ISL84521, ISL84522, ISL84523
Small Outline Plastic Packages (SOIC)
M16.15 (JEDEC MS-012-AC ISSUE C)
16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE
N
INCHES
INDEX
AREA
H
0.25(0.010) M
B M
SYMBOL
E
-B-
1
2
3
L
SEATING PLANE
-A-
h x 45o
A
D
-C-
e
B
0.25(0.010) M
C
0.10(0.004)
C A M
B S
MILLIMETERS
MAX
MIN
MAX
NOTES
A
0.053
0.069
1.35
1.75
-
A1
0.004
0.010
0.10
0.25
-
B
0.014
0.019
0.35
0.49
9
C
0.007
0.010
0.19
0.25
-
D
0.386
0.394
9.80
10.00
3
E
0.150
0.157
3.80
4.00
4
e
µα
A1
MIN
0.050 BSC
1.27 BSC
-
H
0.228
0.244
5.80
6.20
-
h
0.010
0.020
0.25
0.50
5
L
0.016
0.050
0.40
1.27
6
8o
0o
N
α
16
0o
16
7
8o
Rev. 1 02/02
NOTES:
1. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication Number 95.
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater
above the seating plane, shall not exceed a maximum value of
0.61mm (0.024 inch)
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact.
11
ISL84521, ISL84522, ISL84523
Thin Shrink Small Outline Plastic Packages (TSSOP)
M16.173
N
16 LEAD THIN SHRINK SMALL OUTLINE PLASTIC PACKAGE
INDEX
AREA
E
0.25(0.010) M
2
INCHES
E1
GAUGE
PLANE
-B1
B M
MIN
MAX
MIN
MAX
NOTES
A
-
0.043
-
1.10
-
0.05
0.15
-
0.85
0.95
-
A2
L
0.05(0.002)
-A-
SYMBOL
A1
3
A
D
-C-
e
α
c
0.10(0.004)
C A M
B S
0.002
0.037
0.0075
0.012
0.19
0.30
9
c
0.0035
0.008
0.09
0.20
-
D
0.193
0.201
4.90
5.10
3
E1
0.169
0.177
4.30
4.50
4
0.026 BSC
E
0.246
L
0.020
N
α
NOTES:
0.006
0.033
b
e
A2
A1
b
0.10(0.004) M
0.25
0.010
SEATING PLANE
MILLIMETERS
0.65 BSC
0.256
6.25
0.028
0.50
16
0o
6.50
0.70
16
8o
0o
6
7
8o
1. These package dimensions are within allowable dimensions of
JEDEC MO-153-AB, Issue E.
Rev. 1 2/02
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
3. Dimension “D” does not include mold flash, protrusions or gate
burrs. Mold flash, protrusion and gate burrs shall not exceed
0.15mm (0.006 inch) per side.
4. Dimension “E1” does not include interlead flash or protrusions.
Interlead flash and protrusions shall not exceed 0.15mm (0.006
inch) per side.
5. The chamfer on the body is optional. If it is not present, a visual
index feature must be located within the crosshatched area.
6. “L” is the length of terminal for soldering to a substrate.
7. “N” is the number of terminal positions.
8. Terminal numbers are shown for reference only.
9. Dimension “b” does not include dambar protrusion. Allowable
dambar protrusion shall be 0.08mm (0.003 inch) total in excess
of “b” dimension at maximum material condition. Minimum space
between protrusion and adjacent lead is 0.07mm (0.0027 inch).
10. Controlling dimension: MILLIMETER. Converted inch dimensions are not necessarily exact. (Angles in degrees)
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12
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