INTERSIL ISL89411IP

ISL89410, ISL89411, ISL89412
®
Data Sheet
July 1, 2009
High Speed, Dual Channel Power
MOSFET Drivers
FN6798.1
Features
• Industry Standard Driver Replacement
The ISL89410, ISL89411, ISL89412 ICs are similar to the
EL7202, EL7212, EL7222 series but with greater VDD
ratings. These are very high speed matched dual drivers
capable of delivering peak currents of 2.0A into highly
capacitive loads. The high speed performance is achieved
by means of a proprietary “Turbo-Driver” circuit that speeds
up input stages by tapping the wider voltage swing at the
output. Improved speed and drive capability are enhanced
by matched rise and fall delay times. These matched delays
maintain the integrity of input-to-output pulse-widths to
reduce timing errors and clock skew problems. This
improved performance is accompanied by a 10-fold
reduction in supply currents over bipolar drivers, yet without
the delay time problems commonly associated with CMOS
devices. Dynamic switching losses are minimized with
non-overlapped drive techniques.
Pinouts
• Improved Response Times
• Matched Rise and Fall Times
• Reduced Clock Skew
• Low Output Impedance
• Low Input Capacitance
• High Noise Immunity
• Improved Clocking Rate
• Low Supply Current
• Wide Operating Voltage Range
• Pb-Free Available (RoHS compliant)
Applications
• Clock/line Drivers
ISL89410
(8 LD PDIP, SOIC)
TOP VIEW
ISL89411
(8 LD PDIP, SOIC)
TOP VIEW
• CCD Drivers
• Ultra-Sound Transducer Drivers
• Power MOSFET Drivers
NC
1
8
NC
NC
1
8
NC
INA
2
7
OUTA
INA
2
7
OUTA
• Switch Mode Power Supplies
GND
3
6
V+
GND
3
6
V+
• Class D Switching Amplifiers
INB
4
5
OUTB
INB
4
5
OUTB
• Ultrasonic and RF Generators
INVERTING
DRIVERS
• Pulsed Circuits
NON-INVERTING
DRIVERS
Pin Descriptions
SYMBOL
V+
ISL89412
(8 LD PDIP, SOIC)
TOP VIEW
GND
INA, INB
NC
1
8
NC
INA
2
7
OUTA
GND
3
6
v+
INB
4
5
OUTB
PIN DESCRIPTIONS
Power voltage from 4.5V to 18V.
Power voltage return
Logic inputs.
OUTA
OUTA
Non-inverted ouput for ISL89410. Inverted output
for ISL89411 and ISL89412.
OUTB
OUTB
Non-inverted output for ISL89410 and ISL89412.
Inverted output for ISL89411.
NC
These pins must be left unconnected.
COMPLEMENTARY
DRIVERS
Manufactured under U.S. Patent Nos. 5,334,883, #5,341,047
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774 | Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright Intersil Americas Inc. 2008, 2009. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
ISL89410, ISL89411, ISL89412
Ordering Information
PART
NUMBER
PART
MARKING
TEMP. RANGE
(°C)
PKG.
DWG. #
PACKAGE
ISL89410IP
ISL 89410IP
-40 to +85
8 Ld PDIP
E8.3
ISL89410IPZ (Note)
89410 IPZ
-40 to +85
8 Ld PDIP** (Pb-free)
E8.3
ISL89410IBZ (Note)
89410 IBZ
-40 to +85
8 Ld SOIC (Pb-free)
MDP0027
ISL89410IBZ-T13* (Note)
89410 IBZ
-40 to +85
8 Ld SOIC (Tape and Reel)
(Pb-free)
MDP0027
ISL89411IP
ISL 89411IP
-40 to +85
8 Ld PDIP
E8.3
ISL89411IPZ (Note)
ISL 89411IPZ
-40 to +85
8 Ld PDIP** (Pb-free)
E8.3
ISL89411IBZ (Note)
89411 IBZ
-40 to +85
8 Ld SOIC (Pb-free)
MDP0027
ISL89411IBZ-T13* (Note)
89411 IBZ
-40 to +85
8 Ld SOIC (Tape and Reel)
(Pb-free)
MDP0027
ISL89412IP
ISL 89412IP
-40 to +85
8 Ld PDIP
E8.3
ISL89412IPZ
89412 IPZ
-40 to +85
8 Ld PDIP** (Pb-free)
E8.3
ISL89412IBZ (Note)
89412 IBZ
-40 to +85
8 Ld SOIC (Pb-free)
MDP0027
ISL89412IBZ-T13* (Note)
89412 IBZ
-40 to +85
8 Ld SOIC (Tape and Reel)
(Pb-free)
MDP0027
*Please refer to TB347 for details on reel specifications.
**Pb-free PDIPs can be used for through-hole wave solder processing only. They are not intended for use in Reflow solder processing applications
NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets, molding compounds/die attach materials, and 100%
matte tin plate plus anneal (e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations). Intersil
Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.
2
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Absolute Maximum Ratings
Thermal Information
Supply (V+ to GND) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19.0V
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V above V+
Combined Peak Output Current. . . . . . . . . . . . . . . . . . . . . . . . . . .4A
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation
8 Ld SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .570mW
8 Ld PDIP* . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1050mW
Storage Temperature Range . . . . . . . . . . . . . . . . . .-65°C to +150°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Pb-Free Reflow Profile. . . . . . . . . . . . . . . . . . . . . . . . .see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
*Pb-free PDIPs can be used for through-hole wave solder
processing only. They are not intended for use in Reflow solder
processing applications.
Maximum Recommended Operating Conditions
Recommended Operating V+ Range. . . . . . . . . . . . . . 4.5V to 18.0V
Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to V+
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and
result in failures not covered by warranty.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
DC Electrical Specifications
TA = +25°C, V = 18V unless otherwise specified; Parameters with MIN and/or MAX limits are 100% tested
at +25°C, unless otherwise specified. Temperature limits established by characterization and are not
production tested.
PARAMETER
DESCRIPTION
TEST CONDITIONS
MIN
TYP
MAX
UNITS
INPUT
VIH
Logic “1” Input Voltage
IIH
Logic “1” Input Current
VIL
Logic “0” Input Voltage
IIL
Logic “0” Input Current
VHVS
Input Hysteresis
2.4
@V+
V
0.1
@0V
0.1
10
µA
0.8
V
10
µA
0.3
V
OUTPUT
ROH
Pull-Up Resistance
IOUT = -100mA
3
6
Ω
ROL
Pull-Down Resistance
IOUT = +100mA
4
6
Ω
IPK
Peak Output Current
Source
2
IDC
Continuous Output Current
Source/Sink
Power Supply Current
Inputs High/ISL89410
4.5
7.5
mA
Inputs High/ISL89411
1
2.5
mA
2.5
5.0
mA
18
V
MAX
UNITS
Sink
A
2
A
100
mA
POWER SUPPLY
IS
Inputs High/ISL89412
VS
Operating Voltage
AC Electrical Specifications
PARAMETER
4.5
TA = +25°C, V = 18V unless otherwise specified.
DESCRIPTION
TEST CONDITIONS
MIN
TYP
SWITCHING CHARACTERISTICS
tR
Rise Time (Note 1)
CL = 500pF
7.5
ns
CL = 1000pF
10
tF
Fall Time (Note 1)
CL = 500pF
10
CL = 1000pF
13
20
ns
20
ns
ns
tD1
Turn-On Delay Time (Note 1)
See “Timing Table” on page 4
18
25
ns
tD2
Turn-Off Delay Time (Note 1)
See“Timing Table” on page 4
20
25
ns
NOTE:
1. Limits established by characterization and are not production tested.
3
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Timing Table
5V
INPUT 2.5V
0
90%
INVERTED
OUTPUT
10%
90%
NON-INVERTED
OUTPUT
10%
tD2
tD1
tF
tR
tR
tF
Standard Test Configuration
V+
4
6
4.7µF
TAN+
7
2
INPUT
OUTPUT
1000pF
3
Simplified Schematic
V+
+
-
INPUT
+
OUTPUT
VREF
INPUT
BUFFER
4
REFERENCE
AND LEVEL
SHIFTER
INVERTING
BUFFER
WITH
HYSTERESIS
2ND
INVERTING
BUFFER
SUPER
INVERTER
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Typical Performance Curves
FIGURE 1. MAX POWER/DERATING CURVES
FIGURE 3. INPUT CURRENT vs VOLTAGE
FIGURE 2. SWITCH THRESHOLD vs SUPPLY VOLTAGE
FIGURE 4. PEAK DRIVE vs SUPPLY VOLTAGE
ISL89410
ISL89411
ISL89412
FIGURE 5. QUIESCENT SUPPLY CURRENT
5
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Typical Performance Curves
(Continued)
FIGURE 6. “ON” RESISTANCE vs SUPPLY VOLTAGE
FIGURE 7. AVERAGE SUPPLY CURRENT vs VOLTAGE AND
FREQUENCY
FIGURE 8. AVERAGE SUPPLY CURRENT vs CAPACITIVE
LOAD
FIGURE 9. RISE/FALL TIME vs LOAD
FIGURE 10. RISE/FALL TIME vs SUPPLY VOLTAGE
FIGURE 11. PROPAGATION DELAY vs SUPPLY VOLTAGE
6
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Typical Performance Curves
(Continued)
FIGURE 12. RISE/FALL TIME vs TEMPERATURE
FIGURE 13. DELAY vs TEMPERATURE
ISL89411 Macro Model
**** ISL89411 Model ****
*
input
*
|
gnd
*
|
|
Vsupply
*
|
|
| Vout
.subckt M89411 2 3 6 7
V1 12 3 1.6
R1 13 15 1k
R2 14 15 5k
R5 11 12 100
C1 15 3 43.3 pF
D1 14 13 dmod
X1 13 11 2 3 comp1
X2 16 12 15 3 comp1
sp 6 7 16 3 spmod
sn 7 3 16 3 snmod
g1 11 0 13 0 938µ
.model dmod d
.model spmod vswitch ron3 roff2meg von1 voff1.5
.model snmod vswitch ron4 roff2meg von3 voff2
.ends M89411
7
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
.subckt comp1 out inp inm vss
e1 out vss table { (v(inp) v(inm))* 5000} (0,0) (3.2,3.2)
Rout out vss 10meg
Rinp inp vss 10meg
Rinm inm vss 10meg
.ends comp1
V+
PARASITIC LEAD
INDUCTANCE
Cq
Application Guidelines
It is important to minimize inductance to the power FET by
keeping the output drive current loop as short as possible.
Also, the decoupling capacitor, Cq, should be a high quality
ceramic capacitor with a Q that should be a least 10x the
gate Q of the power FET. A ground plane under this circuit is
also recommended.
V+
Cq SHOULD BE AS CLOSE AS
POSSIBLE TO THE V+ AND
GND PINS
Cq
LOOP AS
SHORT AS
POSSIBLE
GND
GND
FIGURE 15. SUGGESTED CONFIGURATION FOR DRIVING
INDUCTIVE LOADS
Where high supply voltage operation is required (15V to
18V), input signals with a minimum of 3.3V input drive is
suggested and a minimum rise/fall time of 100ns. This is
recommended to minimize the internal bias current power
dissipation.
Excessive power dissipation in the driver can result when
driving highly capacitive FET gates at high frequencies.
These gate power losses are defined by Equation 1:
P = 2 • Q C • V gs • f SW
(EQ. 1)
where:
FIGURE 14. RECOMMENDED LAYOUT METHODS
In applications where it is difficult to place the driver very
close to the power FET (which may result with excessive
parasitic inductance), it then may be necessary to add an
external gate resistor to dampen the inductive ring. If this
resistor must be too large in value to be effective, then as an
alternative, Schottky diodes can be added to clamp the ring
voltage to V+ or GND.
8
P = Power
Qc = Charge of the Power FET at Vgs
Vgs = Gate drive voltage (V+)
fSW = switching Frequency
Adding a gate resistor to the output of the driver will transfer
some of the driver dissipation to the resistor. Another
possible solution is to lower the gate driver voltage which
also lowers Qc.
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Small Outline Package Family (SO)
A
D
h X 45¬
(N/2)+1
N
A
PIN #1
I.D. MARK
E1
E
c
SEE DETAIL “
1
(N/2)
B
L1
0.010 M C A B
e
H
C
A2
GAUGE
PLANE
SEATING
PLANE
A1
0.004 C
0.010 M C A B
L
b
0.010
4¬× ¬±
DETAIL X
MDP0027
SMALL OUTLINE PACKAGE FAMILY (SO)
INCHES
SYMBOL
SO-14
SO16 (0.300”)
(SOL-16)
SO20
(SOL-20)
SO24
(SOL-24)
SO28
(SOL-28)
TOLERANCE
NOTES
A
0.068
0.068
0.068
0.104
0.104
0.104
0.104
MAX
-
A1
0.006
0.006
0.006
0.007
0.007
0.007
0.007
±0.003
-
A2
0.057
0.057
0.057
0.092
0.092
0.092
0.092
±0.002
-
b
0.017
0.017
0.017
0.017
0.017
0.017
0.017
±0.003
-
c
0.009
0.009
0.009
0.011
0.011
0.011
0.011
±0.001
-
D
0.193
0.341
0.390
0.406
0.504
0.606
0.704
±0.004
1, 3
E
0.236
0.236
0.236
0.406
0.406
0.406
0.406
±0.008
-
E1
0.154
0.154
0.154
0.295
0.295
0.295
0.295
±0.004
2, 3
e
0.050
0.050
0.050
0.050
0.050
0.050
0.050
Basic
-
L
0.025
0.025
0.025
0.030
0.030
0.030
0.030
±0.009
-
L1
0.041
0.041
0.041
0.056
0.056
0.056
0.056
Basic
-
h
0.013
0.013
0.013
0.020
0.020
0.020
0.020
Reference
-
16
20
24
28
Reference
-
N
SO-8
SO16
(0.150”)
8
14
16
Rev. M 2/07
NOTES:
1. Plastic or metal protrusions of 0.006” maximum per side are not included.
2. Plastic interlead protrusions of 0.010” maximum per side are not included.
3. Dimensions “D” and “E1” are measured at Datum Plane “H”.
4. Dimensioning and tolerancing per ASME Y14.5M-1994
9
FN6798.1
July 1, 2009
ISL89410, ISL89411, ISL89412
Dual-In-Line Plastic Packages (PDIP)
E8.3 (JEDEC MS-001-BA ISSUE D)
N
8 LEAD DUAL-IN-LINE PLASTIC PACKAGE
E1
INDEX
AREA
1 2 3
INCHES
N/2
-B-
-AD
E
BASE
PLANE
-C-
SEATING
PLANE
A2
A
L
D1
e
B1
D1
A1
eC
B
0.010 (0.25) M
C A B S
MILLIMETERS
SYMBOL
MIN
MAX
MIN
MAX
NOTES
A
-
0.210
-
5.33
4
A1
0.015
-
0.39
-
4
A2
0.115
0.195
2.93
4.95
-
B
0.014
0.022
0.356
0.558
-
C
L
B1
0.045
0.070
1.15
1.77
8, 10
eA
C
0.008
0.014
0.204
C
D
0.355
0.400
9.01
eB
NOTES:
1. Controlling Dimensions: INCH. In case of conflict between
English and Metric dimensions, the inch dimensions control.
5
D1
0.005
-
0.13
-
5
E
0.300
0.325
7.62
8.25
6
E1
0.240
0.280
6.10
7.11
5
e
0.100 BSC
2. Dimensioning and tolerancing per ANSI Y14.5M-1982.
eA
0.300 BSC
3. Symbols are defined in the “MO Series Symbol List” in Section
2.2 of Publication No. 95.
eB
-
L
0.115
4. Dimensions A, A1 and L are measured with the package seated
in JEDEC seating plane gauge GS-3.
0.355
10.16
N
2.54 BSC
7.62 BSC
0.430
-
0.150
2.93
8
6
10.92
7
3.81
4
8
5. D, D1, and E1 dimensions do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.010 inch
(0.25mm).
6. E and eA are measured with the leads constrained to be perpendicular to datum -C- .
9
Rev. 0 12/93
7. eB and eC are measured at the lead tips with the leads unconstrained. eC must be zero or greater.
8. B1 maximum dimensions do not include dambar protrusions.
Dambar protrusions shall not exceed 0.010 inch (0.25mm).
9. N is the maximum number of terminal positions.
10. Corner leads (1, N, N/2 and N/2 + 1) for E8.3, E16.3, E18.3,
E28.3, E42.6 will have a B1 dimension of 0.030 - 0.045 inch
(0.76 - 1.14mm).
All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.
Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without
notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see www.intersil.com
10
FN6798.1
July 1, 2009