ISL9K460P3 4A, 600V Stealth™ Dual Diode General Description Features The ISL9K460P3 is a Stealth™ dual diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 3 • Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 20ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V • Avalanche Energy Rated Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD • Snubber Diode Formerly developmental type TA49408. Package Symbol JEDEC TO-220AB K CATHODE (FLANGE) ANODE 2 CATHODE ANODE 1 A2 A1 Device Maximum Ratings (per leg) TC= 25°C unless otherwise noted Symbol VRRM Parameter Peak Repetitive Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V Average Rectified Forward Current (TC = 155°C) 4 A Total Device Current (Both Legs) 8 A IFRM Repetitive Peak Surge Current (20kHz Square Wave) 8 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 50 A Power Dissipation 58 W Avalanche Energy (0.5A, 80mH) 10 mJ -55 to 175 °C 300 260 °C °C VRWM VR IF(AV) PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2003 Fairchild Semiconductor Corporation ISL9K460P3 Rev. B2 ISL9K460P3 July 2003 Device Marking K460P3 Device ISL9K460P3 Electrical Characteristics (per leg) Symbol Package TO-220AC Tape Width N/A Quantity 50 TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10V, IF = 0A - 19 - pF IF = 1A, dIF/dt = 100A/µs, VR = 30V - 17 20 ns IF = 4A, dIF/dt = 100A/µs, VR = 30V - 19 22 ns IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 17 - ns - 2.6 - A - 22 - nC ns VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 4A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr Reverse Recovery Time Reverse Recovery Time IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge dIM/dt IF = 4A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C IF = 4A, dIF/dt = 400A/µs, VR = 390V, TC = 125°C Maximum di/dt during tb - 77 - - 4.2 - - 2.8 - A - 100 - nC ns - 54 - - 3.5 - - 4.3 - A 110 - nC 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 2.6 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W ©2003 Fairchild Semiconductor Corporation ISL9K460P3 Rev. B2 ISL9K460P3 Package Marking and Ordering Information ISL9K460P3 Typical Performance Curves 8 600 175oC 175oC 25oC 6 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 7 150oC 5 4 o 100 C 3 2 150oC 100 125oC 100oC 10 75oC 1 25oC 1 0.1 100 0 0 0.5 1 1.5 2 2.5 3 200 VF, FORWARD VOLTAGE (V) 300 400 500 600 VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs Forward Voltage Figure 2. Reverse Current vs Reverse Voltage 120 90 VR = 390V, TJ = 125oC VR = 390V, TJ = 125oC 80 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 100 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 70 60 50 40 30 tb AT IF = 8A, 4A, 2A 80 60 40 20 ta AT IF = 8A, 4A, 2A 20 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 0 1 2 3 4 5 6 7 0 100 8 200 IF, FORWARD CURRENT (A) 8 VR = 390V, TJ = 125oC dIF/dt = 800A/µs 6 5 dIF/dt = 500A/µs 4 3 dIF/dt = 200A/µs 2 1 2 3 4 5 6 7 8 IF, FORWARD CURRENT (A) Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2003 Fairchild Semiconductor Corporation 400 500 700 600 800 900 1000 Figure 4. ta and tb Curves vs dIF/dt IRRM , MAX REVERSE RECOVERY CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A) Figure 3. ta and tb Curves vs Forward Current 7 300 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 8 VR = 390V, TJ = 125oC 7 IF = 8A 6 IF = 4A IF = 2A 5 4 3 2 1 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9K460P3 Rev. B2 ISL9K460P3 Typical Performance Curves (Continued) 180 VR = 390V, TJ = 125oC QRR, REVERSE RECOVERY CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 6 5 IF = 4A 4 IF = 8A 3 IF = 2A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125oC 140 IF = 4A 120 100 IF = 2A 80 60 100 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 300 400 500 600 700 800 900 1000 Figure 8. Reverse Recovery Charge vs dIF/dt 1800 IF(AV) , AVERAGE FORWARD CURRENT (A) 5 1600 CJ , JUNCTION CAPACITANCE (pF) 200 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs dIF/dt 1400 1200 1000 800 600 400 200 0 0.03 1.0 10 100 3 2 1 150 155 160 165 170 175 TC , CASE TEMPERATURE (OC) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 4 0 0.1 VR , REVERSE VOLTAGE (V) ZqJA, NORMALIZED THERMAL IMPEDANCE IF = 8A 160 Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2003 Fairchild Semiconductor Corporation ISL9K460P3 Rev. B2 ISL9K460P3 Test Circuit and Waveforms VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + VGE - MOSFET t1 0.25 IRM VDD IRM t2 Figure 12. Itrr Test Circuit Figure 13. trr Waveforms and Definitions I = 0.5A L = 80mH R < 0.1Ω VDD = 200V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE VAVL R + VDD Q1 VDD DUT IL t0 Figure 14. Avalanche Energy Test Circuit ©2003 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms ISL9K460P3 Rev. B2 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT™ ACEx™ FACT Quiet Series™ ActiveArray™ FAST® Bottomless™ FASTr™ CoolFET™ CROSSVOLT™ FRFET™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ ImpliedDisconnect™ ISOPLANAR™ LittleFET™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TruTranslation™ UHC™ UltraFET® VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I3