Fairchild ISL9R1560S2 15a, 600v stealthâ ¢ diode Datasheet

ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
15A, 600V Stealth™ Diode
General Description
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . tb / ta > 1.2
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S2 and
ISL9R1560S3S are Stealth™ diodes optimized for low loss
performance in high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(IRM(REC)) and exceptionally soft recovery under typical
operating conditions.
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . trr < 30ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 175oC
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low IRM(REC) and short ta phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with an SMPS IGBT to
provide the most efficient and highest power density design at
lower cost.
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Formerly developmental type TA49410.
Package
Symbol
JEDEC TO-220AC
JEDEC STYLE TO-247
ANODE
K
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
ANODE
CATHODE
CATHODE
(FLANGE)
A
JEDEC STYLE TO-262
JEDEC TO-263AB
ANODE
CATHODE
CATHODE
(FLANGE)
CATHODE
(FLANGE)
N/C
ANODE
Device Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VRRM
Parameter
Repetitive Peak Reverse Voltage
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
IF(AV)
Average Rectified Forward Current (TC = 145oC)
15
A
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
30
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
200
A
VRWM
VR
©2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
November 2002
EAVL
TJ, TSTG
TL
TPKG
Parameter
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
Ratings
150
Units
W
20
mJ
-55 to 175
°C
300
260
°C
°C
CAUTION: Stresses above those listed in “Device Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Package Marking and Ordering Information
Device Marking
R1560G2
Device
ISL9R1560G2
Package
TO-247
Tape Width
N/A
Quantity
30
R1560P2
ISL9R1560P2
TO-220AC
N/A
50
R1560S2
ISL9R1560S2
TO-262
N/A
50
R1560S3S
ISL9R1560S3S
TO-263AB
24mm
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
IR
Instantaneous Reverse Current
VR = 600V
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
TC = 25°C
-
1.8
2.2
V
TC = 125°C
-
1.65
2.0
V
-
62
-
pF
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 15A
Dynamic Characteristics
CJ
Junction Capacitance
VR = 10V, IF = 0A
Switching Characteristics
trr
trr
IRM(REC)
QRR
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRM(REC)
QRR
Maximum Reverse Recovery Current
Reverse Recovered Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRM(REC)
QRR
dIM/dt
Maximum Reverse Recovery Current
Reverse Recovered Charge
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
25
30
ns
IF = 15A, dIF/dt = 100A/µs, VR = 30V
-
35
40
ns
IF = 15A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-
29.4
-
ns
-
3.5
-
A
-
57
-
nC
ns
IF = 15A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
-
90
-
-
2.0
-
-
5.0
-
A
-
275
-
nC
IF = 15A,
dIF/dt = 800A/µs,
VR = 390V,
TC = 125°C
-
52
-
ns
-
1.36
-
-
13.5
-
A
-
390
-
nC
-
800
-
A/µs
Maximum di/dt during tb
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
1.0
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-247
-
-
30
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-262
-
-
62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-263
-
-
62
°C/W
©2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Symbol
PD
4000
30
175oC
1000
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
25
175oC
150oC
20
25oC
125oC
15
100oC
10
150oC
125oC
100
100oC
75oC
10
1
5
25oC
0
0.5
0.75
1.0
1.25
1.5
1.75
2.0
0.1
100
2.25
200
VF, FORWARD VOLTAGE (V)
Figure 1. Forward Current vs Forward Voltage
500
600
100
VR = 390V, TJ = 125°C
80
VR = 390V, TJ = 125°C
tb AT IF = 30A, 15A, 7.5A
80
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
400
Figure 2. Reverse Current vs Reverse Voltage
100
60
40
20
60
40
20
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
ta AT IF = 30A, 15A, 7.5A
0
0
5
10
15
20
25
0
200
30
IF, FORWARD CURRENT (A)
dIF/dt = 800A/µs
14
12
dIF/dt = 500A/µs
10
8
dIF/dt = 200A/µs
6
4
2
0
5
10
15
20
25
30
IF, FORWARD CURRENT (A)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2002 Fairchild Semiconductor Corporation
600
800
1000
1200
1400
1600
Figure 4. ta and tb Curves vs dIF/dt
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
16
VR = 390V, TJ = 125°C
400
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. ta and tb Curves vs Forward Current
IRM(REC) , MAX REVERSE RECOVERY CURRENT (A)
300
VR , REVERSE VOLTAGE (V)
25
VR = 390V, TJ = 125°C
IF = 30A
20
IF = 15A
15
IF = 7.5A
10
5
0
200
400
600
800
1000
1200
1400
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Typical Performance Curves
QRR, REVERSE RECOVERED CHARGE (nC)
S, REVERSE RECOVERY SOFTNESS FACTOR
700
2.5
VR = 390V, TJ = 125°C
IF = 30A
2.0
IF = 15A
1.5
IF = 7.5A
1.0
0.5
200
400
600
800
1000
1200
1400
VR = 390V, TJ = 125°C
IF = 30A
600
500
IF = 15A
400
IF = 7.5A
300
200
200
1600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
1000
1200
1400
1600
IF(AV), AVERAGE FORWARD CURRENT (A)
16
1000
800
600
400
200
0
0.1
1
10
12
10
8
6
4
2
0
140
145
150
155
160
165
170
175
TC, CASE TEMPERATURE (oC)
Figure 9. Junction Capacitance vs Reverse
Voltage
1.0
14
100
VR , REVERSE VOLTAGE (V)
THERMAL IMPEDANCE
800
Figure 8. Reverse Recovered Charge vs dIF/dt
1200
CJ , JUNCTION CAPACITANCE (pF)
600
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dIF/dt
ZθJA, NORMALIZED
400
Figure 10. DC Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 11. Normalized Maximum Transient Thermal Impedance
©2002 Fairchild Semiconductor Corporation
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
CURRENT
SENSE
dIF
trr
dt
ta
tb
0
+
VGE
-
MOSFET
t1
0.25 IRM
VDD
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
VAVL
R
+
VDD
Q1
VDD
DUT
IL
t0
Figure 14. Avalanche Energy Test Circuit
©2002 Fairchild Semiconductor Corporation
IL
I V
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S Rev. C1
ISL9R1560G2, ISL9R1560P2, ISL9R1560S2, ISL9R1560S3S
Test Circuit
and Waveforms
Typical
Performance
Curves (Continued)
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Definition of Terms
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Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
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First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
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changes at any time without notice in order to improve
design.
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Rev. I1
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