Fairchild ISL9R860P2 8a, 600v stealthâ ¢ diode Datasheet

ISL9R860P2, ISL9R860S3ST
8A, 600V Stealth™ Diode
General Description
Features
The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are
Stealth™ diodes optimized for low loss performance in
high frequency hard switched applications. The
Stealth™ family exhibits low reverse recovery current
(IRRM) and exceptionally soft recovery under typical
operating conditions.
• Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5
This device is intended for use as a free wheeling or
boost diode in power supplies and other power
switching applications. The low IRRM and short ta phase
reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions
under which the diode may be operated without the use
of additional snubber circuitry. Consider using the
Stealth™ diode with an SMPS IGBT to provide the
most efficient and highest power density design at
lower cost.
Formerly developmental type TA49409.
• Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns
• Operating Temperature . . . . . . . . . . . . . . . 175oC
• Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
Package
Symbol
JEDEC TO-220AC
JEDEC TO-263AB
K
CATHODE
(FLANGE)
ANODE
CATHODE
CATHODE
(FLANGE)
N/C
A
ANODE
Device Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VRRM
VRWM
VR
Parameter
Peak Repetitive Reverse Voltage
Ratings
600
Units
V
Working Peak Reverse Voltage
600
V
DC Blocking Voltage
600
V
8
A
IF(AV)
Average Rectified Forward Current (TC = 147oC)
IFRM
Repetitive Peak Surge Current (20kHz Square Wave)
16
A
IFSM
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
100
A
PD
EAVL
TJ, TSTG
TL
TPKG
Power Dissipation
85
W
Avalanche Energy (1A, 40mH)
20
mJ
-55 to 175
°C
300
260
°C
°C
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2009 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
October 2009
Device Marking
R860P2
R860S3S
Device
ISL9R860P2
Package
TO-220AC
Tape Width
-
Quantity
-
ISL9R860S3ST
TO-263AB
24mm
800
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
IR
Instantaneous Reverse Current
TC = 25°C
-
-
100
µA
TC = 125°C
-
-
1.0
mA
TC = 25°C
-
2.0
2.4
V
TC = 125°C
-
1.6
2.0
V
VR = 10V, IF = 0A
-
30
-
pF
IF = 1A, dIF/dt = 100A/µs, VR = 30V
-
18
25
ns
IF = 8A, dIF/dt = 100A/µs, VR = 30V
-
21
30
ns
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V, TC = 25°C
-
28
-
ns
-
3.2
-
A
-
50
-
nC
-
77
-
ns
-
3.7
-
-
3.4
-
A
-
150
-
nC
-
53
-
ns
-
2.5
-
VR = 600V
On State Characteristics
VF
Instantaneous Forward Voltage
IF = 8A
Dynamic Characteristics
CJ
Junction Capacitance
Switching Characteristics
trr
trr
Reverse Recovery Time
Reverse Recovery Time
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
trr
Reverse Recovery Time
S
Softness Factor (tb/ta)
IRRM
Maximum Reverse Recovery Current
QRR
Reverse Recovery Charge
dIM/dt
IF = 8A,
dIF/dt = 200A/µs,
VR = 390V,
TC = 125°C
IF = 8A,
dIF/dt = 600A/µs,
VR = 390V,
TC = 125°C
Maximum di/dt during tb
-
6.5
-
A
195
-
nC
500
-
A/µs
Thermal Characteristics
RθJC
Thermal Resistance Junction to Case
-
-
1.75
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-220
-
-
62
°C/W
RθJA
Thermal Resistance Junction to Ambient TO-263
62
°C/W
©2009 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Package Marking and Ordering Information
16
100
IR, REVERSE CURRENT (µA)
IF, FORWARD CURRENT (A)
175oC
175oC
14
150oC
12
25oC
10
125oC
8
100oC
6
4
150oC
10
125oC
100oC
1
25oC
2
0
0
0.25 0.5 0.75
1
1.25 1.5 1.75
0.1
100
2.25 2.5 2.75
2
200
300
Figure 1. Forward Current vs Forward Voltage
600
90
VR = 390V, TJ = 125°C
VR = 390V, TJ = 125°C
80
70
tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
tb AT IF = 16A, 8A, 4A
70
60
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
500
Figure 2. Reverse Current vs Reverse Voltage
80
50
40
30
20
10
2
4
6
8
10
12
50
40
30
20
ta AT IF = 16A, 8A, 4A
0
0
60
10
ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs
14
0
100
16
200
IF, FORWARD CURRENT (A)
Figure 3. ta and tb Curves vs Forward Current
11
VR = 390V, TJ = 125°C
dIF/dt = 800A/µs
10
9
8
dIF/dt = 500A/µs
7
6
5
dIF/dt = 200A/µs
4
3
2
0
2
4
6
8
10
12
IF, FORWARD CURRENT (A)
14
16
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
©2009 Fairchild Semiconductor Corporation
300 400
500
600
900
700 800
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
1000
Figure 4. ta and tb Curves vs dIF/dt
IRRM , MAX REVERSE RECOVERY CURRENT (A)
IRRM , MAX REVERSE RECOVERY CURRENT (A)
400
VR , REVERSE VOLTAGE (V)
VF, FORWARD VOLTAGE (V)
14
VR = 390V, TJ = 125°C
12
IF = 16A
10
IF = 8A
8
IF = 4A
6
4
2
0
100
200
300
400
500
600
700
800
900
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 6. Maximum Reverse Recovery Current vs
dIF/dt
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Typical Performance Curves
350
S, REVERSE RECOVERY SOFTNESS FACTOR
6
QRR, REVERSE RECOVERY CHARGE (nC)
VR = 390V, TJ = 125°C
5
4
IF = 16A
IF = 8A
3
IF = 4A
2
1
100
200
300
400
500
600
700
800
900
VR = 390V, TJ = 125°C
300
IF = 16A
250
IF = 8A
200
150
IF = 4A
100
50
100
1000
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
500
600
700
800
900
1000
IF(AV), AVERAGE FORWARD CURRENT (A)
10
1000
800
600
400
200
0
0.1
1
10
100
VR , REVERSE VOLTAGE (V)
Figure 9. Junction Capacitance vs Reverse Voltage
1.0
THERMAL IMPEDANCE
400
Figure 8. Reverse Recovery Charge vs dIF/dt
1200
CJ , JUNCTION CAPACITANCE (pF)
300
dIF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs dIF/dt
ZθJA, NORMALIZED
200
8
6
4
2
0
140
145
150
155
160
165
170
175
TC, CASE TEMPERATURE (oC)
Figure 10. DC Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
PDM
0.1
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
SINGLE PULSE
PEAK TJ = PDM x ZθJA x RθJA + TA
0.01
10-5
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
100
101
Figure 11. Normalized Maximum Transient Thermal Impedance
©2009 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S2, ISL9R860S3ST
Typical Performance Curves (Continued)
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
IF
DUT
RG
VGE
CURRENT
SENSE
trr
dt
ta
tb
0
+
VDD
-
MOSFET
t1
dIF
0.25 IRM
IRM
t2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
VDD = 50V
EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
L
CURRENT
SENSE
Q1
VAVL
R
+
IL
VDD
DUT
t0
Figure 14. Avalanche Energy Test Circuit
©2009 Fairchild Semiconductor Corporation
IL
I V
t1
t2
t
Figure 15. Avalanche Current and Voltage
Waveforms
ISL9R860P2, ISL9R860S3ST Rev. C2
ISL9R860P2, ISL9R860S3ST
Test Circuits and Waveforms
ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions
TO-220AC
Dimensions in Millimeters
TO-263AB
10.67
9.65
-A-
12.70
1.68
1.00
4
9.45
9.65
8.38
10.00
(6.40)
1.78 MAX
2
3.80
3
1
1.05
1.78
1.14
0.99
0.51
(2.12)
5.08
5.08
0.25
B
M
LAND PATTERN RECOMMENDATION
UNLESS NOTED, ALL DIMS TYPICAL
AM
-B6.22 MIN
4.83
4.06
1.65
1.14
4
6.86 MIN
15.88
14.61
SEE
DETAIL A
2
3
1
GAGE PLANE
0.74
0.33
0.25
8
0
NOTES: UNLESS OTHERWISE SPECIFIED
A) ALL DIMENSIONS ARE IN MILLIMETERS.
B) REFERENCE JEDEC, TO-263, VARIATION AB.
C) DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M - 1994.
D) LOCATION OF THE PIN HOLE MAY VARY
(LOWER LEFT CORNER, LOWER CENTER
AND CENTER OF THE PACKAGE).
E) LANDPATTERN RECOMMENDATION PER IPC
TO254P1524X482-3N
F) FILENAME: TO263A02REV6
0.10
2.79
1.78
0.25 MAX
B
8
0
(5.38)
SEATING
PLANE
Dimensions in Millimeters
DETAIL A, ROTATED 90
SCALE: 2X
ISL9R860P2, ISL9R860S3ST
Mechanical Dimensions
tm
ISL9R860P2, ISL9R860S3ST
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Definition
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Datasheet contains the design specifications for product development. Specifications
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Datasheet contains preliminary data; supplementary data will be published at a later
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