ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V Stealth™ Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current (IRRM) and exceptionally soft recovery under typical operating conditions. • Soft Recovery . . . . . . . . . . . . . . . . . . . tb / ta > 2.5 This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRRM and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the Stealth™ diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. • Avalanche Energy Rated • Fast Recovery . . . . . . . . . . . . . . . . . . . . trr < 25ns • Operating Temperature . . . . . . . . . . . . . . . 175oC • Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . 600V Applications • Switch Mode Power Supplies • Hard Switched PFC Boost Diode • UPS Free Wheeling Diode • Motor Drive FWD • SMPS FWD Formerly developmental type TA49409. • Snubber Diode Package Symbol JEDEC TO-220AC JEDEC TO-263AB JEDEC STYLE TO-262 K ANODE CATHODE CATHODE (FLANGE) ANODE CATHODE CATHODE (FLANGE) CATHODE (FLANGE) A N/C ANODE Device Maximum Ratings TC= 25°C unless otherwise noted Symbol VRRM VRWM VR Parameter Peak Repetitive Reverse Voltage Ratings 600 Units V Working Peak Reverse Voltage 600 V DC Blocking Voltage 600 V A IF(AV) Average Rectified Forward Current (TC = 147oC) 8 IFRM Repetitive Peak Surge Current (20kHz Square Wave) 16 A IFSM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz) 100 A Power Dissipation 85 W Avalanche Energy (1A, 40mH) 20 mJ -55 to 175 °C 300 260 °C °C PD EAVL TJ, TSTG TL TPKG Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief TB334 CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. ©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1 ISL9R860P2, ISL9R860S2, ISL9R860S3ST May 2004 Device Marking R860P2 Device ISL9R860P2 Package TO-220AC Tape Width - Quantity - R860S2 ISL9R860S2 TO-262 - - R860S3S ISL9R860S3ST TO-263AB 24mm 800 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off State Characteristics IR Instantaneous Reverse Current TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA TC = 25°C - 2.0 2.4 V TC = 125°C - 1.6 2.0 V VR = 10V, IF = 0A - 30 - pF IF = 1A, dIF/dt = 100A/µs, VR = 30V - 18 25 ns IF = 8A, dIF/dt = 100A/µs, VR = 30V - 21 30 ns IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 25°C - 28 - ns - 3.2 - A - 50 - nC ns VR = 600V On State Characteristics VF Instantaneous Forward Voltage IF = 8A Dynamic Characteristics CJ Junction Capacitance Switching Characteristics trr trr Reverse Recovery Time Reverse Recovery Time IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge trr Reverse Recovery Time S Softness Factor (tb/ta) IRRM Maximum Reverse Recovery Current QRR Reverse Recovery Charge dIM/dt IF = 8A, dIF/dt = 200A/µs, VR = 390V, TC = 125°C IF = 8A, dIF/dt = 600A/µs, VR = 390V, TC = 125°C Maximum di/dt during tb - 77 - - 3.7 - - 3.4 - A - 150 - nC ns - 53 - - 2.5 - - 6.5 - A 195 - nC 500 - A/µs Thermal Characteristics RθJC Thermal Resistance Junction to Case - - 1.75 °C/W RθJA Thermal Resistance Junction to Ambient TO-220 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-262 - - 62 °C/W RθJA Thermal Resistance Junction to Ambient TO-263 62 °C/W ©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1 ISL9R860P2, ISL9R860S2, ISL9R860S3ST Package Marking and Ordering Information 16 100 IR, REVERSE CURRENT (µA) IF, FORWARD CURRENT (A) 175oC 175oC 14 150oC 12 25oC 10 125oC 8 100oC 6 4 150oC 10 125oC 100oC 1 25oC 2 0 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2 0.1 100 2.25 2.5 2.75 200 300 Figure 1. Forward Current vs Forward Voltage 600 90 VR = 390V, TJ = 125°C VR = 390V, TJ = 125°C 80 70 tb AT dIF/dt = 200A/µs, 500A/µs, 800A/µs tb AT IF = 16A, 8A, 4A 70 60 t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 500 Figure 2. Reverse Current vs Reverse Voltage 80 50 40 30 20 10 2 4 6 8 10 12 50 40 30 20 ta AT IF = 16A, 8A, 4A 0 0 60 10 ta AT dIF/dt = 200A/µs, 500A/µs, 800A/µs 14 0 100 16 200 IF, FORWARD CURRENT (A) Figure 3. ta and tb Curves vs Forward Current 11 VR = 390V, TJ = 125°C dIF/dt = 800A/µs 10 9 8 dIF/dt = 500A/µs 7 6 5 dIF/dt = 200A/µs 4 3 2 0 2 4 6 8 10 12 IF, FORWARD CURRENT (A) 14 16 Figure 5. Maximum Reverse Recovery Current vs Forward Current ©2004 Fairchild Semiconductor Corporation 300 400 500 600 900 700 800 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 1000 Figure 4. ta and tb Curves vs dIF/dt IRRM , MAX REVERSE RECOVERY CURRENT (A) IRRM , MAX REVERSE RECOVERY CURRENT (A) 400 VR , REVERSE VOLTAGE (V) VF, FORWARD VOLTAGE (V) 14 VR = 390V, TJ = 125°C 12 IF = 16A 10 IF = 8A 8 IF = 4A 6 4 2 0 100 200 300 400 500 600 700 800 900 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 6. Maximum Reverse Recovery Current vs dIF/dt ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1 ISL9R860P2, ISL9R860S2, ISL9R860S3ST Typical Performance Curves 350 S, REVERSE RECOVERY SOFTNESS FACTOR 6 QRR, REVERSE RECOVERY CHARGE (nC) VR = 390V, TJ = 125°C 5 4 IF = 16A IF = 8A 3 IF = 4A 2 1 100 200 300 400 500 600 700 800 900 VR = 390V, TJ = 125°C 300 IF = 16A 250 IF = 8A 200 150 IF = 4A 100 50 100 1000 dIF /dt, CURRENT RATE OF CHANGE (A/µs) 500 600 700 800 900 1000 IF(AV), AVERAGE FORWARD CURRENT (A) 10 1000 800 600 400 200 0 0.1 1 10 100 VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs Reverse Voltage 1.0 THERMAL IMPEDANCE 400 Figure 8. Reverse Recovery Charge vs dIF/dt 1200 CJ , JUNCTION CAPACITANCE (pF) 300 dIF /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Softness Factor vs dIF/dt ZθJA, NORMALIZED 200 8 6 4 2 0 140 145 150 155 160 165 170 175 TC, CASE TEMPERATURE (oC) Figure 10. DC Current Derating Curve DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.1 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZθJA x RθJA + TA 0.01 10-5 10-4 10-3 10-2 10-1 t, RECTANGULAR PULSE DURATION (s) 100 101 Figure 11. Normalized Maximum Transient Thermal Impedance ©2004 Fairchild Semiconductor Corporation ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1 ISL9R860P2, ISL9R860S2, ISL9R860S3ST Typical Performance Curves (Continued) VGE AMPLITUDE AND RG CONTROL dIF/dt t1 AND t2 CONTROL IF L IF DUT RG VGE CURRENT SENSE trr dt ta tb 0 + VDD - MOSFET t1 dIF 0.25 IRM IRM t2 Figure 12. trr Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1Ω VDD = 50V EAVL = 1/2LI2 [VR(AVL) /(VR(AVL) - VDD)] Q1 = IGBT (BVCES > DUT VR(AVL)) L CURRENT SENSE Q1 VAVL R + IL VDD DUT t0 Figure 14. Avalanche Energy Test Circuit ©2004 Fairchild Semiconductor Corporation IL I V t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms ISL9R860P2, ISL9R860S2, ISL9R860S3ST Rev. C1 ISL9R860P2, ISL9R860S2, ISL9R860S3ST Test Circuits and Waveforms TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST ActiveArray™ FASTr™ Bottomless™ FPS™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ DOME™ GTO™ EcoSPARK™ HiSeC™ E2CMOS™ I2C™ EnSigna™ i-Lo™ FACT™ ImpliedDisconnect™ FACT Quiet Series™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC Across the board. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I11