IT124 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems replaces discontinued Intersil IT124 The IT124 is a monolithic pair of Super-Beta NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring extremely tight matching. The IT124 is a direct replacement for discontinued Intersil IT124. The 6 Pin SOT-23 provides ease of manufacturing, and a lower cost assembly option. (See Packaging Information). IT124 Features: Very high gain Tight matching Low Output Capacitance FEATURES Direct Replacement for INTERSIL IT124 HIGH GAIN LOW OUTPUT CAPACITANCE VBE tracking ABSOLUTE MAXIMUM RATINGS 1 @ 25°C (unless otherwise noted) hFE ≥ 1500 @ 1 AND 10µA ≤ 2.0pF ≤ 5.0µV°C Maximum Temperatures Storage Temperature Operating Junction Temperature Maximum Power Dissipation Continuous Power Dissipation (One side) Continuous Power Dissipation (Both sides) Linear Derating factor (One side) Linear Derating factor (Both sides) Maximum Currents Collector Current MATCHING CHARACTERISTICS @ 25°C (unless otherwise stated) SYMBOL CHARACTERISTIC |VBE1 – VBE2 | Base Emitter Voltage Differential ∆|(VBE1 – VBE2)| / ∆T Base Emitter Voltage Differential Change with Temperature |IB1 – IB2 | Base Current Differential ‐65°C to +200°C ‐55°C to +150°C 250mW 500mW 2.3mW/°C 4.3mW/°C 10mA MIN ‐‐ ‐‐ TYP 2 5 MAX 5 15 UNITS mV µV/°C ‐‐ ‐‐ 0.6 nA CONDITIONS IC = 10µA, VCE = 1V IC = 10µA, VCE = 1V TA = ‐55°C to +125°C IC = 10µA, VCE = 1V Click To Buy ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS MIN. BVCBO Collector to Base Voltage 2 BVCEO Collector to Emitter Voltage 2 BVEBO Emitter‐Base Breakdown Voltage 6.2 BVCCO Collector to Collector Voltage 100 hFE DC Current Gain 1500 1500 VCE(SAT) Collector Saturation Voltage ‐‐ IEBO Emitter Cutoff Current ‐‐ ICBO Collector Cutoff Current ‐‐ COBO Output Capacitance ‐‐ CC1C2 Collector to Collector Capacitance ‐‐ IC1C2 Collector to Collector Leakage Current ‐‐ fT Current Gain Bandwidth Product 100 NF Narrow Band Noise Figure ‐‐ TYP. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ ‐‐ 0.5 100 100 2 2 10 ‐‐ 3 UNITS V V V V V pA pA pF pF nA MHz dB CONDITIONS IC = 10µA, IE = 0 IC = 10µA, IB = 0 IE = 10µA, IC = 02 IC = 10µA, IE = 0 IC = 1µA, VCE = 1V IC = 10µA, VCE = 1V IC = 1mA, IB = 0.1mA IC = 0, VEB = 3V IE = 0, VCB = 1V IE = 0, VCB = 1V VCC = 0V VCC = ±50V IC = 100µA, VCE = 1V IC = 10µA, VCE = 3V, BW=200Hz, RG= 10KΩ, f = 1KHz Notes: 1. Absolute Maximum ratings are limiting values above which serviceability may be impaired 2. The reverse base‐to‐emitter voltage must never exceed 6.2 volts; the reverse base‐to‐emitter current must never exceed 10µA. Available Packages: SOT-23 (Top View) IT124 in SOT-23 IT124 available as bare die Please contact Micross for full package and die dimensions: Email: [email protected] Web: www.micross.com/distribution.aspx Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems.